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Huang H, Zha J, Xu S, Yang P, Xia Y, Wang H, Dong D, Zheng L, Yao Y, Zhang Y, Chen Y, Ho JC, Chan HP, Zhao C, Tan C. Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se xTe 1-x Nanosheets for p-Type Transistors and Inverters. ACS NANO 2024; 18:17293-17303. [PMID: 38885180 DOI: 10.1021/acsnano.4c05323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1-x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1-x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se-Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1-x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V-1·s-1, being eight times higher than thermally evaporated SexTe1-x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V.
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Affiliation(s)
- Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Jiajia Zha
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Songcen Xu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Huide Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Dechen Dong
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Chunsong Zhao
- Huawei Technologies Co., LTD., Shenzhen 518129, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
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Liu H, Chen L, Shen Y, Fan L, Zhang J, Zhu H, Shi Y, Yan S. Advances in selenium from materials to applications. NANOTECHNOLOGY 2024; 35:242003. [PMID: 38471145 DOI: 10.1088/1361-6528/ad32d3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Accepted: 03/11/2024] [Indexed: 03/14/2024]
Abstract
Over the past few decades, single-element semiconductors have received a great deal of attention due to their unique light-sensitive and heat-sensitive properties, which are of great application and research significance. As one promising material, selenium, being a typical semiconductor, has attracted significant attention from researchers due to its unique properties including high optical conductivity, anisotropic, thermal conductivity, and so on. To promote the application of selenium nanomaterials in various fields, numerous studies over the past few decades have successfully synthesized selenium nanomaterials in various morphologies using a wide range of physical and chemical methods. In this paper, we review and summarise the different methods of synthesis of various morphologies of selenium nanomaterials and discuss the applications of different nanostructures of selenium nanomaterials in optoelectronic devices, chemical sensors, and biomedical applications. Finally, we discuss possible challenges for selenium nanodevices and provide an outlook on the future applications of selenium nanomaterials.
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Affiliation(s)
- Hao Liu
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Liping Chen
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Yunkun Shen
- College of Automation & College of Artificial Intelligence, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Li Fan
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Jiawei Zhang
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Hongliang Zhu
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Yi Shi
- National Laboratory of Solid State Microstructures School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shancheng Yan
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
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Liu J, Zhang J. Fabrication of two Se/CsPbBr 3 heterojunctions structures for self-powered UV-visible photodetectors. RSC Adv 2022; 12:33780-33788. [PMID: 36505710 PMCID: PMC9685597 DOI: 10.1039/d2ra06597e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Accepted: 11/16/2022] [Indexed: 11/26/2022] Open
Abstract
It has been a universal route for enhanced photoelectric performance in photodetectors by constructing a heterojunction that is conductive for suppressing recombination of photogenerated carriers and promoting collection efficiency, and probably producing self-powered capability. However, the dependence of the built-in electric field distributions created by the heterojunction on photodetector performance has rarely been investigated. Herein, two kinds of self-powered UV-visible photodetectors with different device architectures based on single Se wire and CsPbBr3 particles are facilely fabricated and compared. It is found that both the two photodetectors show excellent self-powered operating properties, fast response and binary response. However, due to the different distributions of built-in electric field caused by device architectures, it yields a significant photovoltaic voltage distinction and different responsivity and detectivity spectra for the Se/CsPbBr3 photodetectors. These results are conductive to guide the design of self-powered heterojunction photodetectors by regulating the built-in electric field distributions.
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Affiliation(s)
- Jiaojiao Liu
- School of Electronic and Information Engineering, Changshu Institute of Technology Changshu 215500 China
- Suzhou Key Laboratory of Advanced Lighting and Display Technologies China
| | - Jie Zhang
- School of Electronic and Information Engineering, Changshu Institute of Technology Changshu 215500 China
- Suzhou Key Laboratory of Advanced Lighting and Display Technologies China
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Qin JK, Sui C, Qin Z, Wu J, Guo H, Zhen L, Xu CY, Chai Y, Wang C, He X, Ye PD, Lou J. Mechanical Anisotropy in Two-Dimensional Selenium Atomic Layers. NANO LETTERS 2021; 21:8043-8050. [PMID: 34550704 DOI: 10.1021/acs.nanolett.1c02294] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) trigonal selenium (t-Se) has become a new member in 2D semiconducting nanomaterial families. It is composed of well-aligned one-dimensional Se atomic chains bonded via van der Waals (vdW) interaction. The contribution of this unique anisotropic nanostructure to its mechanical properties has not been explored. Here, for the first time, we combine experimental and theoretical analyses to study the anisotropic mechanical properties of individual 2D t-Se nanosheets. It was found that its fracture strength and Young's modulus parallel to the atomic chain direction are much higher than along the transverse direction, which was attributed to the weak vdW interaction between Se atomic chains as compared to the covalent bonding within individual chains. Additionally, two distinctive fracture modes along two orthogonal loading directions were identified. This work provides important insights into the understanding of anisotropic mechanical behaviors of 2D semiconducting t-Se and opens new possibilities for future applications.
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Affiliation(s)
- Jing-Kai Qin
- Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Chao Sui
- Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, China
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Zhao Qin
- Department of Civil and Environmental Engineering, Syracuse University, Syracuse, New York 13244, United States
| | - Jianyang Wu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, China
| | - Hua Guo
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Chao Wang
- Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, China
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Xiaodong He
- Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, China
- Shenzhen STRONG Advanced Materials Research Institute Co., Ltd., Shenzhen 518000, P. R. China
| | - Peide D Ye
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jun Lou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
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Li C, Li J, Li Z, Zhang H, Dang Y, Kong F. High-Performance Photodetectors Based on Nanostructured Perovskites. NANOMATERIALS 2021; 11:nano11041038. [PMID: 33921639 PMCID: PMC8073735 DOI: 10.3390/nano11041038] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2021] [Revised: 04/05/2021] [Accepted: 04/09/2021] [Indexed: 11/16/2022]
Abstract
In recent years, high-performance photodetectors have attracted wide attention because of their important applications including imaging, spectroscopy, fiber-optic communications, remote control, chemical/biological sensing and so on. Nanostructured perovskites are extremely suitable for detective applications with their long carrier lifetime, high carrier mobility, facile synthesis, and beneficial to device miniaturization. Because the structure of the device and the dimension of nanostructured perovskite have a profound impact on the performance of photodetector, we divide nanostructured perovskite into 2D, 1D, and 0D, and review their applications in photodetector (including photoconductor, phototransistor, and photodiode), respectively. The devices exhibit high performance with high photoresponsivity, large external quantum efficiency (EQE), large gain, high detectivity, and fast response time. The intriguing properties suggest that nanostructured perovskites have a great potential in photodetection.
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Affiliation(s)
- Chunlong Li
- Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China; (Z.L.); (H.Z.)
- Correspondence: (C.L.); (Y.D.); (F.K.)
| | - Jie Li
- International College of Optoelectronic Engineering, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250014, China;
| | - Zhengping Li
- Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China; (Z.L.); (H.Z.)
| | - Huayong Zhang
- Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China; (Z.L.); (H.Z.)
| | - Yangyang Dang
- Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, School of Physics and Physical Engineering, Qufu Normal University, Qufu 273100, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China
- Correspondence: (C.L.); (Y.D.); (F.K.)
| | - Fangong Kong
- Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China; (Z.L.); (H.Z.)
- Correspondence: (C.L.); (Y.D.); (F.K.)
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6
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Tareen AK, Khan K, Aslam M, Zhang H, Liu X. Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications. NANOSCALE 2021; 13:510-552. [PMID: 33404570 DOI: 10.1039/d0nr07444f] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.
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Affiliation(s)
- Ayesha Khan Tareen
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China. and Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China. and School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan (DGUT), Dongguan, 523808, Guangdong Province, P. R. China and Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Muhammad Aslam
- Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Xinke Liu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
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Liu JY, Liu C, Yu J. Theoretical investigation of the interaction of gas molecules with Pt-adsorbed arsenene monolayers. COMPUT THEOR CHEM 2020. [DOI: 10.1016/j.comptc.2020.112977] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Lin Z, Wang C, Chai Y. Emerging Group-VI Elemental 2D Materials: Preparations, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003319. [PMID: 32797721 DOI: 10.1002/smll.202003319] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2020] [Revised: 07/02/2020] [Indexed: 05/17/2023]
Abstract
Due to the ultrathin thickness and dangling-bond-free surface, 2D materials have been regarded as promising candidates for future nanoelectronics. In recent years, group-VI elemental 2D materials have been rediscovered and found superior in electrical properties (e.g., high carrier mobility, high photoconductivity, and thermoelectric response). The outstanding semiconducting properties of group-VI elemental 2D materials enable device applications including high-performance field-effect transistors and optoelectronic devices. The excellent environmental stability also facilitates fundamental studies and practical applications of group-VI elemental 2D materials. This Review first focuses on the crystal structures of group-VI elemental 2D materials. Afterward, preparation methods for nanostructures of group-VI materials are introduced with comprehensive studies. A brief Review of the electronic structures is then presented with an understanding of the electrical properties. This Review also contains the device applications of group-VI elemental 2D materials, emphasizing transistors, photodetectors, and other appealing applications. Finally, this Review provides an outlook for the development of group-VI elemental 2D materials, highlighting the challenges and opportunities in fundamental studies and technological applications.
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Affiliation(s)
- Ziyuan Lin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
| | - Cong Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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Ouyang L, Armstrong JPK, Chen Q, Lin Y, Stevens MM. Void-free 3D Bioprinting for In-situ Endothelialization and Microfluidic Perfusion. ADVANCED FUNCTIONAL MATERIALS 2020; 30:1909009. [PMID: 35677899 DOI: 10.1002/adfm.201909909] [Citation(s) in RCA: 99] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Indexed: 05/21/2023]
Abstract
Two major challenges of 3D bioprinting are the retention of structural fidelity and efficient endothelialization for tissue vascularization. We address both of these issues by introducing a versatile 3D bioprinting strategy, in which a templating bioink is deposited layer-by-layer alongside a matrix bioink to establish void-free multimaterial structures. After crosslinking the matrix phase, the templating phase is sacrificed to create a well-defined 3D network of interconnected tubular channels. This void-free 3D printing (VF-3DP) approach circumvents the traditional concerns of structural collapse, deformation and oxygen inhibition, moreover, it can be readily used to print materials that are widely considered "unprintable". By pre-loading endothelial cells into the templating bioink, the inner surface of the channels can be efficiently cellularized with a confluent endothelial layer. This in-situ endothelialization method can be used to produce endothelium with a far greater uniformity than can be achieved using the conventional post-seeding approach. This VF-3DP approach can also be extended beyond tissue fabrication and towards customized hydrogel-based microfluidics and self-supported perfusable hydrogel constructs.
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Affiliation(s)
- Liliang Ouyang
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - James P K Armstrong
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Qu Chen
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Yiyang Lin
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Molly M Stevens
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
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Jiang X, Huang W, Wang R, Li H, Xia X, Zhao X, Hu L, Chen T, Tang Y, Zhang H. Photocarrier relaxation pathways in selenium quantum dots and their application in UV-Vis photodetection. NANOSCALE 2020; 12:11232-11241. [PMID: 32412570 DOI: 10.1039/c9nr10235c] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, chain-like materials have attracted significant attention due to their unique structure and outstanding electro-optical properties. However, the photocarrier dynamics and pathways in these materials that determine the electro-optical performances of the prepared devices have barely been touched. Herein, selenium quantum dots (Se QDs), one typical chain-like material, were prepared via a facile liquid phase exfoliation approach. The photocarrier dynamics in selenium quantum dots were systematically investigated by ultrafast transient absorption spectroscopy in the ultraviolet-visible regime. Four photocarrier decay pathways with different lifetimes were firstly detected, and they assist in the elucidation and reconstruction of the energy schematic diagram of Se QDs. Owing to the broadband photo-response and fast recovery time of Se QDs, a photoelectrochemical (PEC)-type photodetector was proposed for the first time to our knowledge, demonstrating its excellent photodetection properties. Considering the feasible fabrication method and clear photocarrier pathways, the excellent photocurrent density and stability of this photodetector undoubtedly guarantee that selenium is a promising candidate for advanced photonic devices.
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Affiliation(s)
- Xiantao Jiang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
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Huang W, Zhang Y, You Q, Huang P, Wang Y, Huang ZN, Ge Y, Wu L, Dong Z, Dai X, Xiang Y, Li J, Zhang X, Zhang H. Enhanced Photodetection Properties of Tellurium@Selenium Roll-to-Roll Nanotube Heterojunctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1900902. [PMID: 31016874 DOI: 10.1002/smll.201900902] [Citation(s) in RCA: 52] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2019] [Revised: 04/07/2019] [Indexed: 05/07/2023]
Abstract
Non-layered tellurium (Te) is a promising material for applications in transistor and optoelectronic devices for its advantages in excellent intrinsic electronic and optoelectronic properties. However, the poor photodetection performance and relatively uncertain stability of tellurene under ambient conditions greatly limit the practical applications. In order to improve the performance of tellurene-based materials, Te@Se roll-to-roll nanotubes with different selenium (Se) contents synthesized by epitaxial growth of Se on Te nanotubes are, for the first time, employed to fabricate working electrodes for photoelectrochemical (PEC)-type broadband photodetection. They exhibit not only a preferably enhanced capacity for self-powered broadband photodetection but also significantly improved photocurrent density and stability in various aqueous environments (HCl, NaCl, and KOH solutions), compared to tellurene-based photodetectors. It is anticipated that the present work can open up new possibilities for high-performance tellurene-based optoelectronic devices.
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Affiliation(s)
- Weichun Huang
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhang
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Qi You
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Pu Huang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yunzheng Wang
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ziyin N Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Yanqi Ge
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Leiming Wu
- Faculty of Information Technology, Macau University of Science and Technology, Macao, 519020, P. R. China
| | - Zhijun Dong
- Shenzhen Institute of Information Technology, Shenzhen, 518172, P. R. China
| | - Xiaoyu Dai
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yuanjiang Xiang
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jianqing Li
- Faculty of Information Technology, Macau University of Science and Technology, Macao, 519020, P. R. China
| | - Xiuwen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Han Zhang
- SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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13
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Fan T, Xie Z, Huang W, Li Z, Zhang H. Two-dimensional non-layered selenium nanoflakes: facile fabrications and applications for self-powered photo-detector. NANOTECHNOLOGY 2019; 30:114002. [PMID: 30609416 DOI: 10.1088/1361-6528/aafc0f] [Citation(s) in RCA: 54] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) materials exhibit many interesting properties, but most 2D materials are exfoliated from layered bulk materials, limiting the development of the 2D material group. Recently, non-layered 2D materials have aroused great attention due to their excellent catalysis performance, favored compatibility with silicon substrates and high chemical activity. With high photoconductivity, high responsivity and fast response time, non-layered selenium (Se) exhibits important applications in the field of optoelectronics. In this work, we use a simple liquid phase exfoliation method to fabricate 2D Se nanoflakes from bulk Se which possesses a unique chain structure. The thickness of 2D Se nanoflakes was measured to be in the range of 5-10 nm. As-fabricated Se nanoflakes were used in a photodetector by the photoelectrochemical method, showing a high photocurrent density (1.28 μA cm-2) and photoresponsivity (10.45 μA W-1). In addition, the long-term photoelectric measurements indicate that the 2D Se-based photodetector has good time and cycle stability. Our results show that 2D Se has promising potential in liquid-based photo-detectors.
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Affiliation(s)
- Taojian Fan
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, People's Republic of China
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14
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Optimal Sr-Doped Free TiO2@SrTiO3 Heterostructured Nanowire Arrays for High-Efficiency Self-Powered Photoelectrochemical UV Photodetector Applications. CRYSTALS 2019. [DOI: 10.3390/cryst9030134] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Due to their high performance, photoelectrochemical ultraviolet (UV) photodetectors have attracted much attention, but the recombination of photogenerated electrons at the interface of photoanode/electrolyte limited further improvement of photoelectrochemical UV photodetectors (PEC UVPDs). Modification of TiO2 photoanode by SrTiO3 could improve the performance of UVPD, because the energy barrier that is established at the TiO2–SrTiO3 interface could accelerate the separation of the photogenerated electrons-holes pair. However, the recombination center that is caused by the preparation of TiO2@SrTiO3 core-shell heterostructured nanostructure decreases the performance of PEC UVPDs, which is still an important problem that hindered its application in PEC UVPDs. In this paper, we presented a Sr-doped free TiO2@SrTiO3 core-shell heterostructured nanowire arrays as a photoanode for the self-powered PEC UVPD. This will not only accelerate the separation of the photogenerated electrons-holes pair, but it will also reduce the recombination of photogenerated electron-hole pairs in the photoanode. The intrinsic effect of SrTiO3 reaction time on the J variations of UVPDs is investigated in detail. An impressive responsivity of 0.358 A W−1 was achieved at 360 nm for the UVPD based on TiO2@SrTiO3 core-shell heterostructured nanowire arrays, which heretofore is a considerably high photoresponsivity for self-powered photoelectrochemical UVPDs. Additionally, this UVPD also exhibits a high on/off ratio, fast response time, excellent visible-blind characteristic, and linear optical signal response.
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15
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Chen YZ, You YT, Chen PJ, Li D, Su TY, Lee L, Shih YC, Chen CW, Chang CC, Wang YC, Hong CY, Wei TC, Ho JC, Wei KH, Shen CH, Chueh YL. Environmentally and Mechanically Stable Selenium 1D/2D Hybrid Structures for Broad-Range Photoresponse from Ultraviolet to Infrared Wavelengths. ACS APPLIED MATERIALS & INTERFACES 2018; 10:35477-35486. [PMID: 30107132 DOI: 10.1021/acsami.8b11676] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Selenium (Se) is one of the potential candidates as photodetector because of its outstanding properties such as high photoconductivity (∼8 × 104 S cm-1), piezoelectricity, thermoelectricity, and nonlinear optical responses. Solution phase synthesis becomes an efficient way to produce Se, but a contamination issue that could deteriorate the electric characteristic of Se should be taken into account. In this work, a facile, controllable approach of synthesizing Se nanowires (NWs)/films via a plasma-assisted growth process was demonstrated at the low substrate temperature of 100 °C. The detailed formation mechanisms of nanowires arrays to thin films at different plasma powers were investigated. Moreover, indium (In) layer was used to enhance the adhesive strength with 50% improvement on a SiO2/Si substrate by mechanical interlocking and surface alloying between Se and In layers, indicating great tolerance for mechanical stress for future wearable devices applications. Furthermore, the direct growth of Se NWs/films on a poly(ethylene terephthalate) substrate was demonstrated, exhibiting a visible to broad infrared detection ranges from 405 to 1555 nm with a high on/off ratio of ∼700 as well as the fast response time less than 25 ms. In addition, the devices exhibited fascinating stability in the atmosphere over one month.
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Affiliation(s)
- Yu-Ze Chen
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | - Yen-Ting You
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | - Pin-Jung Chen
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | - Dapan Li
- Department of Materials Science and Engineering , City University of Hong Kong , Kowloon 999077 , Hong Kong S.A.R., P. R. China
| | - Teng-Yu Su
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | - Ling Lee
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | - Yu-Chuan Shih
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | - Chia-Wei Chen
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | - Ching-Chen Chang
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | - Yi-Chung Wang
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
| | | | | | - Johnny C Ho
- Department of Materials Science and Engineering , City University of Hong Kong , Kowloon 999077 , Hong Kong S.A.R., P. R. China
| | - Kung-Hwa Wei
- Department of Materials Science and Engineering and Center for Emergent Functional Matter Science , National Chiao Tung University , Hsinchu 30010 , Taiwan , ROC
| | - Chang-Hong Shen
- National Nano Device Laboratories (NDL) , Hsinchu 30078 , Taiwan , ROC
| | - Yu-Lun Chueh
- School of Materials Science and Engineering, State Key Laboratory of Advanced Processing and Recycling of Non-Ferrous Metals in Gansu Province , Lanzhou University of Technology , Lanzhou City 730050 , Gansu Province , P. R. China
- Department of Physics , National Sun Yat-Sen University , Kaohsiung 80424 , Taiwan , ROC
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16
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Yang W, Hu K, Teng F, Weng J, Zhang Y, Fang X. High-Performance Silicon-Compatible Large-Area UV-to-Visible Broadband Photodetector Based on Integrated Lattice-Matched Type II Se/n-Si Heterojunctions. NANO LETTERS 2018; 18:4697-4703. [PMID: 30052044 DOI: 10.1021/acs.nanolett.8b00988] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
A gold-induced NH4Cl-assisted vapor-based route is proposed and developed to achieve vertically aligned submicron Se crystals on lattice-matched (111)-oriented silicon substrates, based on which a high-performance large-area silicon-compatible photodetector is constructed. Thanks to the energy band structure and the strongly asymmetrical depletion region, the fabricated Se/Si device maintains a similar wavelength cutoff to that of selenium devices before the IR region, along with a high-performance broadband photoresponse in the UV-to-visible region. The large-area photodetector maintains a very low leakage current under a -2 V bias, and a high on/off ratio of 103-104 is obtained with a high photocurrent of 62 nA at 500 nm. A photoresponse is clearly observed when the bias voltage is removed. The pulse response precisely provides a high response speed (τrise + τfall ≈ 1.975 ms), exceeding the fastest Se-based photodetectors in current reports. The enhanced photoelectric properties and the self-power photoresponse mainly derive from the integrated high-quality Se/n-Si p-n heterojunctions with both lattice match and type II energy band match.
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Affiliation(s)
- Wei Yang
- Department of Materials Science , Fudan University , Shanghai 200433 , P. R. China
| | - Kai Hu
- Department of Materials Science , Fudan University , Shanghai 200433 , P. R. China
| | - Feng Teng
- Department of Materials Science , Fudan University , Shanghai 200433 , P. R. China
| | - Junhui Weng
- Department of Materials Science , Fudan University , Shanghai 200433 , P. R. China
| | - Yong Zhang
- Department of Materials Science , Fudan University , Shanghai 200433 , P. R. China
| | - Xiaosheng Fang
- Department of Materials Science , Fudan University , Shanghai 200433 , P. R. China
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17
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Teng F, Hu K, Ouyang W, Fang X. Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706262. [PMID: 29888448 DOI: 10.1002/adma.201706262] [Citation(s) in RCA: 115] [Impact Index Per Article: 19.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2017] [Revised: 01/18/2018] [Indexed: 05/03/2023]
Abstract
Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.
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Affiliation(s)
- Feng Teng
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Kai Hu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Weixin Ouyang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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18
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Xie C, Yan F. Flexible Photodetectors Based on Novel Functional Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701822. [PMID: 28922544 DOI: 10.1002/smll.201701822] [Citation(s) in RCA: 91] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2017] [Revised: 07/08/2017] [Indexed: 06/07/2023]
Abstract
Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.
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Affiliation(s)
- Chao Xie
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
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19
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Qin J, Qiu G, Jian J, Zhou H, Yang L, Charnas A, Zemlyanov DY, Xu CY, Xu X, Wu W, Wang H, Ye PD. Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications. ACS NANO 2017; 11:10222-10229. [PMID: 28949510 DOI: 10.1021/acsnano.7b04786] [Citation(s) in RCA: 92] [Impact Index Per Article: 13.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has largely hindered the exploration of its potential applications. In this work, using a physical vapor deposition method, we have demonstrated the synthesis of large-size, high-quality 2D selenium nanosheets, the minimum thickness of which could be as thin as 5 nm. The Se nanosheet exhibits a strong in-plane anisotropic property, which is determined by angle-resolved Raman spectroscopy. Back-gating field-effect transistors based on a Se nanosheet exhibit p-type transport behaviors with on-state current density around 20 mA/mm at Vds = 3 V. Four-terminal field-effect devices are also fabricated to evaluate the intrinsic hole mobility of the selenium nanosheet, and the value is determined to be 0.26 cm2 V-1 s-1 at 300 K. The selenium nanosheet phototransistors show an excellent photoresponsivity of up to 263 A/W, with a rise time of 0.1 s and fall time of 0.12 s. These results suggest that crystal selenium as a 2D form of a 1D van der Waals solid opens up the possibility to explore device applications.
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Affiliation(s)
- Jingkai Qin
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
- School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150001, People's Republic of China
| | - Gang Qiu
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Jie Jian
- School of Materials Science and Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Hong Zhou
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Lingming Yang
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Adam Charnas
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Dmitry Y Zemlyanov
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Cheng-Yan Xu
- School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150001, People's Republic of China
| | - Xianfan Xu
- School of Mechanical Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Wenzhuo Wu
- School of Industry Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
- School of Materials Science and Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Peide D Ye
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
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Bhaskar P, Achtstein AW, Diedenhofen SL, Siebbeles LDA. Mobility and Decay Dynamics of Charge Carriers in One-Dimensional Selenium van der Waals Solid. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2017; 121:18917-18921. [PMID: 28883897 PMCID: PMC5582366 DOI: 10.1021/acs.jpcc.7b05183] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/29/2017] [Revised: 07/21/2017] [Indexed: 06/07/2023]
Abstract
Trigonal selenium is a semiconducting van der Waals solid that consists of helical atomic chains. We studied the mobility and decay dynamics of excess electrons and holes moving along the selenium chains. Excess charge carriers were generated by irradiation of powdered selenium with 3 MeV electron pulses. Their mobility and decay via trapping or recombination was studied by time-resolved microwave conductivity measurements as a function of temperature. The mobility of charge carriers along the Se chains is at least ca. 0.5 cm2·V-1·s-1 at room temperature. Charges decay predominantly by trapping at defects. The appreciable mobility, together with the potential for large-scale production of Se wires by liquid exfoliation, makes this material of great interest for use in nanoelectronics.
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Zheng L, Hu K, Teng F, Fang X. Novel UV-Visible Photodetector in Photovoltaic Mode with Fast Response and Ultrahigh Photosensitivity Employing Se/TiO 2 Nanotubes Heterojunction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1602448. [PMID: 27860321 DOI: 10.1002/smll.201602448] [Citation(s) in RCA: 30] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2016] [Revised: 08/16/2016] [Indexed: 06/06/2023]
Abstract
A feasible strategy for hybrid photodetector by integrating an array of self-ordered TiO2 nanotubes (NTs) and selenium is demonstrated to break the compromise between the responsivity and response speed. Novel heterojunction between the TiO2 NTs and Se in combination with the surface trap states at TiO2 help regulate the electron transport and facilitate the separation of photogenerated electron-hole pairs under photovoltaic mode (at zero bias), leading to a high responsivity of ≈100 mA W-1 at 620 nm light illumination and the ultrashort rise/decay time (1.4/7.8 ms). The implanting of intrinsic p-type Se into TiO2 NTs broadens the detection range to UV-visible (280-700 nm) with a large detectivity of over 1012 Jones and a high linear dynamic range of over 80 dB. In addition, a maximum photocurrent of ≈107 A is achieved at 450 nm light illumination and an ultrahigh photosensitivity (on/off ratio up to 104 ) under zero bias upon UV and visible light illumination is readily achieved. The concept of employing novel heterojunction geometry holds great potential to pave a new way to realize high performance and energy-efficient optoelectronic devices for practical applications.
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Affiliation(s)
- Lingxia Zheng
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Kai Hu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Feng Teng
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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22
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Liang Y, Wang Y, Wang J, Wu S, Jiang D, Lian J. High-performance flexible photodetectors based on single-crystalline Sb2Se3 nanowires. RSC Adv 2016. [DOI: 10.1039/c5ra23542a] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Flexible visible-light photodetectors were fabricated by dispersing a large number of Sb2Se3 nanowires onto the Au interdigitated electrodes on PET substrates, which showed fast response speed and excellent flexibility.
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Affiliation(s)
- Yao Liang
- School of Materials Science and Engineering
- Dalian Jiaotong University
- Dalian 116028
- P. R. China
| | - Yingying Wang
- Department of Optoelectronic Science
- Harbin Institute of Technology at Weihai
- Weihai 264209
- P. R. China
| | - Jianan Wang
- School of Materials Science and Engineering
- Dalian Jiaotong University
- Dalian 116028
- P. R. China
| | - Sumei Wu
- School of Materials Science and Engineering
- Dalian Jiaotong University
- Dalian 116028
- P. R. China
| | - Dayong Jiang
- School of Materials Science and Engineering
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Jiabiao Lian
- School of Civil and Environmental Engineering
- College of Engineering
- Nanyang Technological University
- Singapore 639798
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Ishii S, Duy Dao T, Chen K, Nagao T. Transparent oxides forming conductor/insulator/conductor heterojunctions for photodetection. NANOTECHNOLOGY 2015; 26:215203. [PMID: 25947945 DOI: 10.1088/0957-4484/26/21/215203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Photoexcited hot electrons from conductors can be injected into the conduction bands of wide-bandgap materials, thus enabling the visible and near-infrared (NIR) photoactivities of light-harvesting devices. While metals have been dominantly used as conductors to excite hot electrons, we demonstrate that transparent conductive oxides (TCOs) can also be used for this purpose. Trilayer structures consisting of a thin dielectric layer sandwiched by TCOs show photoresponsiveness in UV, visible, as well as NIR wavelength range. As these trilayer structures are transparent, they can be used to monitor light without blocking it.
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Affiliation(s)
- Satoshi Ishii
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan. CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Deng D, Wang J, Yu JS. Planar Se multipod crystals with unusual growth directions: thoughts on the spontaneous growth of hexagonal Se. CrystEngComm 2015. [DOI: 10.1039/c5ce00207a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Zhang R, Tian X, Ma L, Yang C, Zhou Z, Wang Y, Wang S. Visible-light-responsive t-Se nanorod photocatalysts: synthesis, properties, and mechanism. RSC Adv 2015. [DOI: 10.1039/c5ra03895b] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
One-dimensional (1D) single-crystalline trigonal selenium nanorods (t-Se NRs) were prepared through a “solid–solution–solid” method by dispersing the prepared amorphous α-Se spheres in ethanol.
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Affiliation(s)
- Ruofang Zhang
- Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Xike Tian
- Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Longlong Ma
- Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Chao Yang
- Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Zhaoxin Zhou
- Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Yanxin Wang
- School of Environmental Studies
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Suhua Wang
- Department of Chemistry
- University of Science & Technology of China
- Hefei
- P. R. China
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Tan YM, Zhao YJ, Luo LB, Yang XB, Xu H. Theoretical studies of geometry asymmetry in tellurium nanostructures: intrinsic dipole, charge separation, and semiconductor–metal transition. RSC Adv 2014. [DOI: 10.1039/c4ra04988h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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Luo LB, Wang XH, Xie C, Li ZJ, Lu R, Yang XB, Lu J. One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application. NANOSCALE RESEARCH LETTERS 2014; 9:637. [PMID: 25489288 PMCID: PMC4256975 DOI: 10.1186/1556-276x-9-637] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2014] [Accepted: 11/17/2014] [Indexed: 05/04/2023]
Abstract
In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [Formula: see text] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm(2)V(-1) s(-1) and hole concentration of 1.34 × 10(18) cm(-3), respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 10(2) A W(-1), 3.95 × 10(2) and 6.38 × 10(11) cm Hz(1/2) W(-1), respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices.
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Affiliation(s)
- Lin-Bao Luo
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People’s Republic of China
- Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, People’s Republic of China
| | - Xian-He Wang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People’s Republic of China
| | - Chao Xie
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People’s Republic of China
| | - Zhong-Jun Li
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People’s Republic of China
| | - Rui Lu
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People’s Republic of China
| | - Xiao-Bao Yang
- Department of Physics, South China University of Technology, Guangzhou, Guangdong Province 510641, People’s Republic of China
| | - Jian Lu
- Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, People’s Republic of China
- Centre for Advanced Structural Materials, City University of Hong Kong Shenzhen Research Institute, 8 Yuexing 1st Road, Shenzhen Hi-Tech Industrial Park, Shenzhen, People’s Republic of China
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Dong Y, Feng C, Jiang P, Wang G, Li K, Miao H. Simple one-pot synthesis of ZnO/Ag heterostructures and the application in visible-light-responsive photocatalysis. RSC Adv 2014. [DOI: 10.1039/c3ra46655h] [Citation(s) in RCA: 40] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A simple, mild and large-scale one-pot synthesis method for visible light active ZnO/Ag heterostructures was proposed.
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Affiliation(s)
- Yuming Dong
- Key Laboratory of Food Colloids and Biotechnology (Ministry of Education of China)
- School of Chemical and Material Engineering, Jiangnan University
- Wuxi 214122, P. R. China
| | - Cuiyun Feng
- Key Laboratory of Food Colloids and Biotechnology (Ministry of Education of China)
- School of Chemical and Material Engineering, Jiangnan University
- Wuxi 214122, P. R. China
| | - Pingping Jiang
- Key Laboratory of Food Colloids and Biotechnology (Ministry of Education of China)
- School of Chemical and Material Engineering, Jiangnan University
- Wuxi 214122, P. R. China
| | - Guangli Wang
- Key Laboratory of Food Colloids and Biotechnology (Ministry of Education of China)
- School of Chemical and Material Engineering, Jiangnan University
- Wuxi 214122, P. R. China
| | - Kun Li
- Key Laboratory of Food Colloids and Biotechnology (Ministry of Education of China)
- School of Chemical and Material Engineering, Jiangnan University
- Wuxi 214122, P. R. China
| | - Hongyan Miao
- Key Laboratory of Food Colloids and Biotechnology (Ministry of Education of China)
- School of Chemical and Material Engineering, Jiangnan University
- Wuxi 214122, P. R. China
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Nie B, Luo LB, Chen JJ, Hu JG, Wu CY, Wang L, Yu YQ, Zhu ZF, Jie JS. Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application. NANOTECHNOLOGY 2013; 24:095603. [PMID: 23403941 DOI: 10.1088/0957-4484/24/9/095603] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline form and grow along the [001] direction. The presence of Sb in the ZnSe NWs was confirmed by XPS spectra. Electrical measurement of a single ZnSe:Sb NW based back-gate metal-oxide field-effect-transistor reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over eight orders of magnitude, from 6.36 × 10(-7) S cm(-1) for the undoped sample to ∼37.33 S cm(-1) for the heavily doped sample. A crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with a rectification ratio as high as 10(3) at ±5 V. Remarkably, it exhibits high sensitivity to ultraviolet light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices.
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Affiliation(s)
- Biao Nie
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
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Yu G, Liang B, Huang H, Chen G, Liu Z, Chen D, Shen G. Contact printing of horizontally-aligned p-type Zn₃P₂ nanowire arrays for rigid and flexible photodetectors. NANOTECHNOLOGY 2013; 24:095703. [PMID: 23396096 DOI: 10.1088/0957-4484/24/9/095703] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Zn(3)P(2) is an important p-type semiconductor with the ability to detect almost all visible and ultraviolet light. By using the simple and efficient contact printing process, we reported the assembly of horizontally-aligned p-type Zn(3)P(2) nanowire arrays to be used as building blocks for high performance photodetectors. Horizontally-aligned Zn(3)P(2) nanowire arrays were first printed on silicon substrate to make thin-film transistors, exhibiting typical p-type transistor behavior with a high on/off ratio of 10(3). Besides, the Zn(3)P(2) nanowire array based devices showed a substantial response to illuminated lights with a wide range of wavelengths and densities. Flexible photodetectors were also fabricated by contact printing of horizontally-aligned Zn(3)P(2) nanowire arrays on flexible PET substrate, showing a comparable performance to the device on rigid silicon substrate.
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Affiliation(s)
- Gang Yu
- Michael Grätzel Centre for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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Yu YQ, Luo LB, Zhu ZF, Nie B, Zhang YG, Zeng LH, Zhang Y, Wu CY, Wang L, Jiang Y. High-speed ultraviolet-visible-near infrared photodiodes based on p-ZnS nanoribbon–n-silicon heterojunction. CrystEngComm 2013. [DOI: 10.1039/c2ce26730f] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Wu D, Jiang Y, Zhang Y, Yu Y, Zhu Z, Lan X, Li F, Wu C, Wang L, Luo L. Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm34869a] [Citation(s) in RCA: 100] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
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