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Chantelle L, Menezes de Oliveira AL, Kennedy BJ, Maul J, da Silva MRS, Duarte TM, Albuquerque AR, Sambrano JR, Landers R, Siu-Li M, Longo E, dos Santos IMG. Probing the Site-Selective Doping in SrSnO3:Eu Oxides and Its Impact on the Crystal and Electronic Structures Using Synchrotron Radiation and DFT Simulations. Inorg Chem 2020; 59:7666-7680. [PMID: 32338503 DOI: 10.1021/acs.inorgchem.0c00664] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Laís Chantelle
- NPE-LACOM, Dept de Quı́mica, Universidade Federal da Paraı́ba, João Pessoa - Paraı́ba 58051−085, Brazil
| | - André L. Menezes de Oliveira
- NPE-LACOM, Dept de Quı́mica, Universidade Federal da Paraı́ba, João Pessoa - Paraı́ba 58051−085, Brazil
- School of Chemistry, The University of Sydney, Sydney - New South Wales 2006, Australia
| | - Brendan J. Kennedy
- School of Chemistry, The University of Sydney, Sydney - New South Wales 2006, Australia
| | - Jefferson Maul
- Dipartimento di Chimica, Universita di Torino, via Giuria 5, 10125, Torino, Italy
| | - Márcia R. S. da Silva
- NPE-LACOM, Dept de Quı́mica, Universidade Federal da Paraı́ba, João Pessoa - Paraı́ba 58051−085, Brazil
| | - Thiago M. Duarte
- NPE-LACOM, Dept de Quı́mica, Universidade Federal da Paraı́ba, João Pessoa - Paraı́ba 58051−085, Brazil
| | - Anderson R. Albuquerque
- Instituto de Química, Universidade Federal do Rio Grande do Norte, Natal - Rio Grande do Norte 59078-970, Brazil
| | - Julio R. Sambrano
- Grupo de Simulação e Modelagem Molecular, Universidade Estadual Paulista, Bauru − São Paulo 17033-360, Brazil
| | - Richard Landers
- Instituto de Fı́sica Gleb Wataghin, Universidade Estadual de Campinas, Campinas − São Paulo 13083-859, Brazil
| | - Máximo Siu-Li
- Instituto de Física, Universidade de São Paulo, São Carlos - São Paulo 13563-120, Brazil
| | - Elson Longo
- LIEC/INCTMN, Universidade Estadual Paulista, Araraquara - São Paulo 14800-060, Brazil
| | - Iêda M. G. dos Santos
- NPE-LACOM, Dept de Quı́mica, Universidade Federal da Paraı́ba, João Pessoa - Paraı́ba 58051−085, Brazil
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Lee S, Kim S, Shin S, Jin Z, Min YS. Band structure of amorphous zinc tin oxide thin films deposited by atomic layer deposition. J IND ENG CHEM 2018. [DOI: 10.1016/j.jiec.2017.09.045] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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Hultqvist A, Aitola K, Sveinbjörnsson K, Saki Z, Larsson F, Törndahl T, Johansson E, Boschloo G, Edoff M. Atomic Layer Deposition of Electron Selective SnO x and ZnO Films on Mixed Halide Perovskite: Compatibility and Performance. ACS APPLIED MATERIALS & INTERFACES 2017; 9:29707-29716. [PMID: 28792724 DOI: 10.1021/acsami.7b07627] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
The compatibility of atomic layer deposition directly onto the mixed halide perovskite formamidinium lead iodide:methylammonium lead bromide (CH(NH2)2, CH3NH3)Pb(I,Br)3 (FAPbI3:MAPbBr3) perovskite films is investigated by exposing the perovskite films to the full or partial atomic layer deposition processes for the electron selective layer candidates ZnO and SnOx. Exposing the samples to the heat, the vacuum, and even the counter reactant of H2O of the atomic layer deposition processes does not appear to alter the perovskite films in terms of crystallinity, but the choice of metal precursor is found to be critical. The Zn precursor Zn(C2H5)2 either by itself or in combination with H2O during the ZnO atomic layer deposition (ALD) process is found to enhance the decomposition of the bulk of the perovskite film into PbI2 without even forming ZnO. In contrast, the Sn precursor Sn(N(CH3)2)4 does not seem to degrade the bulk of the perovskite film, and conformal SnOx films can successfully be grown on top of it using atomic layer deposition. Using this SnOx film as the electron selective layer in inverted perovskite solar cells results in a lower power conversion efficiency of 3.4% than the 8.4% for the reference devices using phenyl-C70-butyric acid methyl ester. However, the devices with SnOx show strong hysteresis and can be pushed to an efficiency of 7.8% after biasing treatments. Still, these cells lacks both open circuit voltage and fill factor compared to the references, especially when thicker SnOx films are used. Upon further investigation, a possible cause of these losses could be that the perovskite/SnOx interface is not ideal and more specifically found to be rich in Sn, O, and halides, which is probably a result of the nucleation during the SnOx growth and which might introduce barriers or alter the band alignment for the transport of charge carriers.
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Affiliation(s)
- Adam Hultqvist
- Solid State Electronics, Department of Engineering Sciences, Uppsala University , 751 21 Uppsala, Sweden
| | - Kerttu Aitola
- Physical Chemistry, Department of Chemistry - Ångström Laboratory, Uppsala University , 751 20 Uppsala, Sweden
| | - Kári Sveinbjörnsson
- Physical Chemistry, Department of Chemistry - Ångström Laboratory, Uppsala University , 751 20 Uppsala, Sweden
| | - Zahra Saki
- Physical Chemistry, Department of Chemistry - Ångström Laboratory, Uppsala University , 751 20 Uppsala, Sweden
- Department of Physics, Sharif University of Technology , 145 88 Tehran, Iran
| | - Fredrik Larsson
- Solid State Electronics, Department of Engineering Sciences, Uppsala University , 751 21 Uppsala, Sweden
| | - Tobias Törndahl
- Solid State Electronics, Department of Engineering Sciences, Uppsala University , 751 21 Uppsala, Sweden
| | - Erik Johansson
- Physical Chemistry, Department of Chemistry - Ångström Laboratory, Uppsala University , 751 20 Uppsala, Sweden
| | - Gerrit Boschloo
- Physical Chemistry, Department of Chemistry - Ångström Laboratory, Uppsala University , 751 20 Uppsala, Sweden
| | - Marika Edoff
- Solid State Electronics, Department of Engineering Sciences, Uppsala University , 751 21 Uppsala, Sweden
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Park J, Oh KT, Kim DH, Jeong HJ, Park YC, Kim HS, Park JS. High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties. ACS APPLIED MATERIALS & INTERFACES 2017; 9:20656-20663. [PMID: 28553708 DOI: 10.1021/acsami.7b04235] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Zinc tin oxide (Zn-Sn-O, or ZTO) semiconductor layers were synthesized based on solution processes, of which one type involves the conventional spin coating method and the other is grown by mist chemical vapor deposition (mist-CVD). Liquid precursor solutions are used in each case, with tin chloride and zinc chloride (1:1) as solutes in solvent mixtures of acetone and deionized water. Mist-CVD ZTO films are mostly polycrystalline, while those synthesized by spin-coating are amorphous. Thin-film transistors based on mist-CVD ZTO active layers exhibit excellent electron transport properties with a saturation mobility of 14.6 cm2/(V s), which is superior to that of their spin-coated counterparts (6.88 cm2/(V s)). X-ray photoelectron spectroscopy (XPS) analyses suggest that the mist-CVD ZTO films contain relatively small amounts of oxygen vacancies and, hence, lower free-carrier concentrations. The enhanced electron mobility of mist-CVD ZTO is therefore anticipated to be associated with the electronic band structure, which is examined by X-ray absorption near-edge structure (XANES) analyses, rather than the density of electron carriers.
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Affiliation(s)
- Jozeph Park
- Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology , Daejeon 305-338, Republic of Korea
| | - Keun-Tae Oh
- Department of Information Display and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea
| | - Dong-Hyun Kim
- Department of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea
| | - Hyun-Jun Jeong
- Department of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea
| | - Yun Chang Park
- National Nanofab Center, Daejeon 305-806, Republic of Korea
| | - Hyun-Suk Kim
- Department of Materials Science and Engineering, Chungnam National University , Daejeon 305-764, Republic of Korea
| | - Jin-Seong Park
- Department of Information Display and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea
- Department of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea
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Sharma V, Vyas R, Bazylewski P, Chang GS, Asokan K, Sachdev K. Probing the highly transparent and conducting SnOx/Au/SnOx structure for futuristic TCO applications. RSC Adv 2016. [DOI: 10.1039/c5ra24422f] [Citation(s) in RCA: 43] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A SnOx/Au/SnOx transparent conductive oxide (TCO) multilayered film was fabricated with a total thickness of 75 nm using both e-beam and thermal evaporation techniques.
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Affiliation(s)
- V. Sharma
- Department of Physics
- Malaviya National Institute of Technology
- Jaipur-302017
- India
| | - R. Vyas
- Department of Physics
- School of Basic Sciences
- Jaipur National University
- Jaipur-302017
- India
| | - P. Bazylewski
- Department of Physics & Astronomy
- University of Western
- London-N6A 3K7
- Canada
| | - G. S. Chang
- Department of Physics & Engineering Physics
- University of Saskatchewan
- Saskatoon-S7N 5E2
- Canada
| | - K. Asokan
- Materials Science Division
- Inter-University Accelerator Centre
- New Delhi-110067
- India
| | - K. Sachdev
- Department of Physics
- Malaviya National Institute of Technology
- Jaipur-302017
- India
- Materials Research Centre
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Niu W, Li X, Karuturi SK, Fam DW, Fan H, Shrestha S, Wong LH, Tok AIY. Applications of atomic layer deposition in solar cells. NANOTECHNOLOGY 2015; 26:064001. [PMID: 25604730 DOI: 10.1088/0957-4484/26/6/064001] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Atomic layer deposition (ALD) provides a unique tool for the growth of thin films with excellent conformity and thickness control down to atomic levels. The application of ALD in energy research has received increasing attention in recent years. In this review, the versatility of ALD in solar cells will be discussed. This is specifically focused on the fabrication of nanostructured photoelectrodes, surface passivation, surface sensitization, and band-structure engineering of solar cell materials. Challenges and future directions of ALD in the applications of solar cells are also discussed.
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Affiliation(s)
- Wenbin Niu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
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Kapilashrami M, Zhang Y, Liu YS, Hagfeldt A, Guo J. Probing the Optical Property and Electronic Structure of TiO2 Nanomaterials for Renewable Energy Applications. Chem Rev 2014; 114:9662-707. [DOI: 10.1021/cr5000893] [Citation(s) in RCA: 379] [Impact Index Per Article: 37.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Affiliation(s)
- Mukes Kapilashrami
- Advanced
Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Yanfeng Zhang
- College
of Chemistry and Material Science, Hebei Normal University, Shijiazhuang, Hebei 050024, People’s Republic of China
| | - Yi-Sheng Liu
- Advanced
Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Anders Hagfeldt
- Physical
Chemistry, Department of Chemistry−Ångström Laboratory, Uppsala University, 751 20 Uppsala, Sweden
| | - Jinghua Guo
- Advanced
Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department
of Chemistry and Biochemistry, University of California, Santa Cruz, California 95064, United States
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