Scalable chemical synthesis of doped silicon nanowires for energy applications

A versatile, low-cost and easily scalable synthesis method is presented for producing silicon nanowires (SiNWs) as a pure powder. It applies air-stable diphenylsilane as a Si source and gold nanoparticles as a catalyst and takes place in a sealed reactor at 420 °C (pressure <10 bar). Micron-sized NaCl particles, acting as a sacrificial support for the catalyst particles during NW growth, can simply be removed with water during purification. This process gives access to SiNWs of precisely controlled diameters in the range of 10 ± 3 nm with a high production yield per reactor volume (1 mg cm-3). The reaction was scaled up to 500 mg of SiNWs without altering the morphology or diameter. Adding diphenylphosphine results in SiNW n-type doping as confirmed by ESR spectroscopy and EDX analyses. The measured SiNW doping level closely follows the initial dopant concentration. Doping induces both an increase in diameter and a sharp increase of electrical conductivity for P concentrations >0.4%. When used in symmetric supercapacitor devices, 1% P-doped SiNWs exhibit an areal capacity of 0.25 mF cm-2 and retention of 80% of the initial capacitance after one million cycles, demonstrating excellent cycling stability of the SiNW electrodes in the presence of organic electrolytes.

Interactions at the Peptide/Silicon Surfaces: Evidence of Peptide Multilayer Assembly

Selective deposition of peptides from liquid solutions to n- and p-doped silicon has been demonstrated. The selectivity is governed by peptide/silicon adhesion differences. A noninvasive, fast characterization of the obtained peptide layers is required to promote their application for interfacing silicon-based devices with biological material. In this study we show that spectroscopic ellipsometry-a method increasingly used for the investigation of biointerfaces-can provide essential information about the amount of adsorbed peptide material and the degree of coverage on silicon surfaces. We observed the formation of peptide multilayers for a strongly binding adhesion peptide on p-doped silicon. Application of the patterned layer ellipsometric evaluation method combined with Sellmeier dispersion led to physically consistent results, which describe well the optical properties of peptide layers in the visible spectral range. This evaluation allowed the estimation of surface coverage, which is an important indicator of adsorption quality. The ellipsometric findings were well supported by atomic force microscopy results.

Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock

Semiconducting nanowires (NWs) are becoming essential nanobuilding blocks for advanced devices from sensors to energy harvesters, however their full technology penetration requires large scale materials synthesis together with efficient NW assembly methods. We demonstrate a scalable one-step solution process for the direct selection, collection, and ordered assembly of silicon NWs with desired electrical properties from a poly disperse collection of NWs obtained from a supercritical fluid-liquid-solid growth process. Dielectrophoresis (DEP) combined with impedance spectroscopy provides a selection mechanism at high signal frequencies (>500 kHz) to isolate NWs with the highest conductivity and lowest defect density. The technique allows simultaneous control of five key parameters in NW assembly: selection of electrical properties, control of NW length, placement in predefined electrode areas, highly preferential orientation along the device channel, and control of NWs deposition density from few to hundreds per device. Direct correlation between DEP signal frequency and deposited NWs conductivity is confirmed by field-effect transistor and conducting AFM data. Fabricated NW transistor devices demonstrate excellent performance with up to 1.6 mA current, 10(6)-10(7) on/off ratio and hole mobility of 50 cm(2) V(-1) s(-1).

Understanding quantum confinement in nanowires: basics, applications and possible laws

A comprehensive investigation of quantum confinement in nanowires has been carried out. Though applied to silicon nanowires (SiNWs), it is general and applicable to all nanowires. Fundamentals and applications of quantum confinement in nanowires and possible laws obeyed by these nanowires, have been investigated. These laws may serve as backbones of nanowire science and technology. The relationship between energy band gap and nanowire diameter has been studied. This relationship appears to be universal. A thorough review indicates that the first principles results for quantum confinement vary widely. The possible cause of this variation has been examined. Surface passivation and surface reconstruction of nanowires have been elucidated. It has been found that quantum confinement owes its origin to surface strain resulting from surface passivation and surface reconstruction and hence thin nanowires may actually be crystalline-core/amorphous-shell (c-Si/a-Si) nanowires. Experimental data available in the literature corroborate with the suggestion. The study also reveals an intrinsic relationship between quantum confinement and the surface amorphicity of nanowires. It demonstrates that surface amorphicity may be an important tool to investigate the electronic, optoelectronic and sensorial properties of quantum-confined nanowires.

Lithium ion battery peformance of silicon nanowires with carbon skin

Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g(-1) for 100 cycles when cycled at C/10 and over 1200 mA h g(-1) when cycled more rapidly at 1C against Li metal. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

Metal/nanowire contacts, quantum confinement, and their roles in the generation of new, gigantic actions in nanowire transistors

A distinctly new route for the design, modeling and electrical behavior of very short-channel (5-10 nm in channel length) nanowire field-effect transistors (FETs) has been presented. Essential elements of the approach entail a drain current determined by thermionic emission, but not by carrier mobility in the channel of the transistor. A basic understanding of the fundamental physics and the concepts of Schottky-barrier-based design for the proposed route have been described. Quantum confinement in the nanowire channel together with Schottky barrier tailing and temperature-dependent fluctuations of applied biases has been taken into account for the development of the model. Both current-voltage characteristics and transconductance of FETs have been studied. The calculated results are in near-quantitative agreement with the available experiments. Measured data show very diverse (e.g., exponential, linear, saturating, and non-linear non-exponential non-saturating) nanowire transistor characteristics. The model explains these characteristics well and reveals a number of new transistor actions. It highlights the impacts of quantum confinement and Schottky contacts for these new transistor actions. It also quantifies the significant enhancement of the drain-source current and transconductance. With new findings thus achieved, suggestions for the realization of very high-performance, small-diameter (preferably 2 nm), small-Schottky-barrier-height, high-operating temperature, ultra-short-channel-length, nanowire transistors have been made. Optimized design of these transistors has been suggested. And the range (in terms of device and technological parameters) of the proposed model has been elucidated.