1
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Chen J, Huang J, Zheng T, Yang M, Chen S, Ma J, Jian L, Pan Y, Zheng Z, Huo N, Gao W, Li J. 2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38231-38242. [PMID: 39001805 DOI: 10.1021/acsami.4c06028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
The attractive physical properties of two-dimensional (2D) semiconductors in group IVA-VIA have been fully revealed in recent years. Combining them with 2D ambipolar materials to construct van der Waals heterojunctions (vdWHs) can offer tremendous opportunities for designing multifunctional electronic and optoelectronic devices, such as logic switching circuits, half-wave rectifiers, and broad-spectrum photodetectors. Here, an optimized SnSe0.75S0.25 is grown to design a SnSe0.75S0.25/MoTe2 vdWH for logic operation and wide-spectrum photodetection. Benefiting from the excellent gate modulation under the appropriate sulfur substitution and type-II band alignment, the device exhibits reconfigurable antiambipolar and ambipolar transfer behaviors at positive and negative source-drain voltage (Vds), enabling stable XNOR logic operation. It also features a gate-modulated positive and negative rectifying behavior with rectification ratios of 265:1 and 1:196, confirming its potential as half-wave logic rectifiers. Besides, the device can respond from visible to infrared wavelength up to 1400 nm. Under 635 nm illumination, the maximum responsivity of 1.16 A/W and response time of 657/500 μs are achieved at the Vds of -2 V. Furthermore, due to the strong in-plane anisotropic structure of SnSe0.75S0.25-alloyed nanosheet and narrow bandgap of 2H-MoTe2, it shows a broadband polarization-sensitive function with impressive photocurrent anisotropic ratios of 15.6 (635 nm), 7.0 (808 nm), and 3.7 (1310 nm). The direction along the maximum photocurrent can be reconfigurable depending on the wavelengths. These results indicate that our designed alloyed SnSe0.75S0.25/MoTe2 vdWH has reconfigurable logic operation and broadband photodetection capabilities in 2D multifunctional integrated circuits.
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Affiliation(s)
- Jianru Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Shengdi Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jingyi Ma
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Liang Jian
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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2
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Choi H, Song YE, Park D, Park C, Park BK, Son SU, Lim J, Chung TM. Germanium and Tin Precursors for Chalcogenide Materials Containing N-Alkoxy Thioamide Ligands. ACS OMEGA 2024; 9:28707-28714. [PMID: 38973851 PMCID: PMC11223241 DOI: 10.1021/acsomega.4c03019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Revised: 06/05/2024] [Accepted: 06/07/2024] [Indexed: 07/09/2024]
Abstract
This study describes the synthesis of germanium and tin complexes Ge(mdpaS)2 (1), Ge(edpaS)2 (2), Ge(bdpaS)2 (3), Ge(empaS)2 (4), Sn(mdpaS)2 (5), Sn(edpaS)2 (6), Sn(bdpaS)2 (7), and Sn(empaS)2 (8) (mdpaSH = (Z)-N-methoxy-2,2-dimethylpropanimidothioic acid; edpaSH = (Z)-N-ethoxy-2,2-dimethylpropanimidothioic acid; bdpaSH = (Z)-N-(tert-butoxy)-2,2-dimethylpropanimidothioic acid; empaSH = (Z)-N-ethoxy-2-methylpropanimidothioic acid), using newly designed N-alkoxy thioamide ligands as precursors for metal chalcogenide materials. All complexes were characterized using various analytical techniques, and the single-crystal structures of complexes 5 and 7 revealed a distorted seesaw geometry in the monomeric SnL2 form. Thermogravimetric (TG) curves showed differences between Ge compounds, which exhibited single-step weight losses, and Sn compounds, which exhibited multistep weight losses. As a result, we suggest that the synthesized complexes 1-8 are potential precursors for group IV metal chalcogenide materials.
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Affiliation(s)
- Heenang Choi
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department
of Chemistry, Sungkyunkwan University (SKKU), 2066 Seobu-ro,
Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic
of Korea
| | - Young Eun Song
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department
of Chemical Convergence Materials, University
of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic
of Korea
| | - Dongseong Park
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Chanwoo Park
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Bo Keun Park
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department
of Chemical Convergence Materials, University
of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic
of Korea
| | - Seung Uk Son
- Department
of Chemistry, Sungkyunkwan University (SKKU), 2066 Seobu-ro,
Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic
of Korea
| | - Jongsun Lim
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Taek-Mo Chung
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department
of Chemical Convergence Materials, University
of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic
of Korea
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3
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Zheng T, Pan Y, Yang M, Li Z, Zheng Z, Li L, Sun Y, He Y, Wang Q, Cao T, Huo N, Chen Z, Gao W, Xu H, Li J. 2D Free-Standing GeS 1-xSe x with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313721. [PMID: 38669677 DOI: 10.1002/adma.202313721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 03/30/2024] [Indexed: 04/28/2024]
Abstract
Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.
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Affiliation(s)
- Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhongming Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Ling Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yiming Sun
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yingbo He
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Quanhao Wang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Tangbiao Cao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zuxin Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Hua Xu
- School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
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4
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Motai D, Araki H. Fabrication of (Ge 0.42Sn 0.58)S Thin Films via Co-Evaporation and Their Solar Cell Applications. MATERIALS (BASEL, SWITZERLAND) 2024; 17:692. [PMID: 38591533 PMCID: PMC10856387 DOI: 10.3390/ma17030692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2023] [Revised: 01/28/2024] [Accepted: 01/29/2024] [Indexed: 04/10/2024]
Abstract
In this study, as a novel approach to thin-film solar cells based on tin sulfide, an environmentally friendly material, we attempted to fabricate (Ge, Sn)S thin films for application in multi-junction solar cells. A (Ge0.42 Sn0.58)S thin film was prepared via co-evaporation. The (Ge0.42 Sn0.58)S thin film formed a (Ge, Sn)S solid solution, as confirmed by X-ray diffraction (XRD) and Raman spectroscopy analyses. The open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of (Ge0.42 Sn0.58)S thin-film solar cells were 0.29 V, 6.92 mA/cm2, 0.34, and 0.67%, respectively; moreover, the device showed a band gap of 1.42-1.52 eV. We showed that solar cells can be realized even in a composition range with a relatively higher Ge concentration than the (Ge, Sn)S solar cells reported to date. This result enhances the feasibility of multi-junction SnS-system thin-film solar cells.
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Affiliation(s)
| | - Hideaki Araki
- National Institute of Technology (KOSEN), Nagaoka College, Niigata 940-8532, Japan
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5
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Sutter E, Komsa HP, Puretzky AA, Unocic RR, Sutter P. Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires. ACS NANO 2022; 16:21199-21207. [PMID: 36413759 DOI: 10.1021/acsnano.2c09172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe1-xSx) alloys, obtained by vapor-liquid-solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe1-xSx alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
| | - Hannu-Pekka Komsa
- Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014, Oulu, Finland
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37830, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37830, United States
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
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6
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Zhang R, Luo X, Zhao F, Xu Q, Xu Y, Xu Y, Chen S, Fan X, Qiao X. Mono-crystalline Ge1-Sn Se micro-sheets with hexagonal morphologies for Visible-NIR photodetectors: Increased carrier concentration, narrowed band gap and improved performances. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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7
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Usman M, Muhammad Z, Dastgeer G, Zawadzka N, Niu Y, Imran M, Molas MR, Rui H. Extended anisotropic phonon dispersion and optical properties of two-dimensional ternary SnSSe. Inorg Chem Front 2022. [DOI: 10.1039/d1qi01141c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The phonon dispersion and optical properties of mechanically exfoliated SnSSe were investigated with the aid of high-resolution Raman scattering and photoluminescence (PL) spectroscopies along with first-principles calculations.
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Affiliation(s)
- Muhammad Usman
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province, College of Physics Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Zahir Muhammad
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Ghulam Dastgeer
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
| | - Natalia Zawadzka
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Yijie Niu
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Muhammad Imran
- Department of chemistry, Faculty of science, King Khalid University, P.O. Box 9004, Saudi Arabia
| | - Maciej R. Molas
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Hu Rui
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province, College of Physics Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, PR China
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8
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Robinson F, Sethi V, de Groot CHK, Hector AL, Huang R, Reid G. Low-Pressure CVD of GeE (E = Te, Se, S) Thin Films from Alkylgermanium Chalcogenolate Precursors and Effect of Deposition Temperature on the Thermoelectric Performance of GeTe. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47773-47783. [PMID: 34606236 DOI: 10.1021/acsami.1c14237] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The homologous series [GenBu3(EnBu)] (E = Te, Se, S; (1), (3) and (4)) and [GenBu2(TenBu)2] (2) have been synthesized as mobile oils in excellent yield (72-93%) and evaluated as single-source precursors for the low-pressure chemical vapor deposition (LPCVD) of GeE thin films on silica. Compositional and structural characterizations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray analysis, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterization via variable-temperature Hall effect measurements is also reported. Given the strong interest in GeTe and its alloys for thermoelectric applications, variable-temperature Seebeck data were also investigated for a series of p-type GeTe films. The data show that it is possible to tune the thermoelectric response through intrinsic Ge vacancy regulation by varying the deposition temperature, with the highest power factor (40 μW/K2cm@629 K) and effective ZT values observed for the films deposited at higher temperatures.
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Affiliation(s)
- Fred Robinson
- School of Chemistry, University of Southampton, Southampton SO17 1BJ, U.K
| | - Vikesh Sethi
- School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K
| | - C H Kees de Groot
- School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K
| | - Andrew L Hector
- School of Chemistry, University of Southampton, Southampton SO17 1BJ, U.K
| | - Ruomeng Huang
- School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K
| | - Gillian Reid
- School of Chemistry, University of Southampton, Southampton SO17 1BJ, U.K
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9
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Chen GR, Li CH, Yu CY, Wang MF, Lee CS. Ternary Chalcogenides GeSb 2Se 3 and Ge 3Sb 4Se 7 Containing a ∞1[Sb 2Se 2] 2- 1D Chain and a 2D Structure Related to SnSe. Inorg Chem 2020; 59:11207-11212. [PMID: 32799507 DOI: 10.1021/acs.inorgchem.0c00515] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Ternary chalcogenides, GeSb2Se3 and Ge3Sb4Se7, were synthesized and characterized. These chalcogenides are the first ternary selenides in a ternary Ge-Sb-Se system that feature a layer structure related to black phosphorus and SnSe-type structures. Both compounds contain a ∞1[Sb2Se2]2- unit with Sb+ cations in a zigzag Sb-Sb chain structure, and Sb3+ cations in a distorted NaCl100-type of ∞1[Gen-2Sb2Sen]2+ unit (n = 4, 5). These materials exhibit n-type semiconducting properties with thermal conductivity significantly lower than that of GeSe and Sb2Se3, which could be correlated to the 1D Sb+ chain and disordered sites with different Ge/Sb compositions. It is anticipated that these newly discovered ternary chalcogenides may provide unique properties with enhanced thermoelectric properties.
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Affiliation(s)
- Guan-Ruei Chen
- Department of Applied Chemistry, College of Science, National Chiao Tung University (NCTU), Hsinchu 30010, Taiwan
| | - Chien-He Li
- Graduate Degree Program for Science and Technology of Accelerator Light Source, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ching-Yi Yu
- Department of Applied Chemistry, College of Science, National Chiao Tung University (NCTU), Hsinchu 30010, Taiwan
| | - Ming-Fang Wang
- Department of Applied Chemistry, College of Science, National Chiao Tung University (NCTU), Hsinchu 30010, Taiwan
| | - Chi-Shen Lee
- Department of Applied Chemistry, College of Science, National Chiao Tung University (NCTU), Hsinchu 30010, Taiwan.,Center for Emergent Functional Matter Science, National Chiao Tung University, Hsinchu 30010, Taiwan
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10
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Pal SK, Chandel N, Mehta N. Synthesis and thermal characterization of novel phase change materials (PCMs) of the Se-Te-Sn-Ge (STSG) multi-component system: calorimetric studies of the glass/crystal phase transition. Dalton Trans 2019; 48:4719-4729. [PMID: 30900720 DOI: 10.1039/c8dt03729a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
According to recent literature, germanium-containing chalcogenide glasses (ChGs) show improvement in thermal stability and glass-forming ability because of the self-organization of the glass network towards a more rigid structure. The Ge-containing ChGs play a potential role as PCMs in phase-change optical memory (PCOM) applications. This endeavor reports the synthesis of some novel PCMs with Ge as the chemical modifier to improve the kinetic parameters of glass/crystal phase transition. The compositional variation of the various kinetic parameters in the present STSG chalcogen-rich non-oxide glasses Se78-yGeyTe20Sn2 (0 ≤ y ≤ 6) has been studied by means of the state-of-the-art differential scanning calorimetric (DSC) technique in the non-isothermal mode. The thermally assisted glass transition and crystallization phenomena have been investigated by examining the variation in various kinetic parameters like the characteristic kinetic temperatures (glass transition temperature Tg, on-set crystallization temperature To and peak crystallization temperature Tc), the activation energies involved in both phenomena, the thermal stability factor S and the glass-forming ability (GFA). The thermal stability factor S and GFA increase appreciably at higher concentrations of Ge as a signature of stiffness transition followed by the self-organization of the corner-sharing and the edge-sharing arrangements of the GeSe4 phase.
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Affiliation(s)
- Shiv Kumar Pal
- Physics Department, Institute of Science, Banaras Hindu University, Varanasi-221005, India.
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11
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Ramasamy K, Kotula PG, Modine N, Brumbach MT, Pietryga JM, Ivanov SA. Cubic SnGe nanoalloys: beyond thermodynamic composition limit. Chem Commun (Camb) 2019; 55:2773-2776. [PMID: 30758001 DOI: 10.1039/c8cc07570k] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Tin-germanium alloys are increasingly of interest as optoelectronic and thermoelectric materials as well as materials for Li/Na ion battery electrodes. However, the lattice incompatibility of bulk Sn and Ge makes creating such alloys challenging. By exploiting the unique strain tolerance of nanosized crystals, we have developed a facile synthetic method for homogeneous SnxGe1-x alloy nanocrystals with composition varying from essentially pure Ge to 95% Sn while still maintaining the cubic structure.
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Affiliation(s)
- Karthik Ramasamy
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, New Mexico 87545, USA.
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12
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Rusek M, Bendt G, Wölper C, Bläser D, Schulz S. Intramolecularly-stabilized Group 14 Alkoxides - Promising Precursors for the Synthesis of Group 14-Chalcogenides by Hot-Injection Method. Z Anorg Allg Chem 2017. [DOI: 10.1002/zaac.201700029] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Monika Rusek
- Faculty of Chemistry, Inorganic Chemistry, and Center for Nanointegration Duisburg-Essen (CENIDE); University of Duisburg-Essen; Universitätsstr. 7 45114 Essen Germany
| | - Georg Bendt
- Faculty of Chemistry, Inorganic Chemistry, and Center for Nanointegration Duisburg-Essen (CENIDE); University of Duisburg-Essen; Universitätsstr. 7 45114 Essen Germany
| | - Christoph Wölper
- Faculty of Chemistry, Inorganic Chemistry, and Center for Nanointegration Duisburg-Essen (CENIDE); University of Duisburg-Essen; Universitätsstr. 7 45114 Essen Germany
| | - Dieter Bläser
- Faculty of Chemistry, Inorganic Chemistry, and Center for Nanointegration Duisburg-Essen (CENIDE); University of Duisburg-Essen; Universitätsstr. 7 45114 Essen Germany
| | - Stephan Schulz
- Faculty of Chemistry, Inorganic Chemistry, and Center for Nanointegration Duisburg-Essen (CENIDE); University of Duisburg-Essen; Universitätsstr. 7 45114 Essen Germany
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Kim HS, Jung EA, Han SH, Han JH, Park BK, Kim CG, Chung TM. Germanium Compounds Containing Ge═E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials. Inorg Chem 2017; 56:4084-4092. [DOI: 10.1021/acs.inorgchem.6b02697] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Hyo-Suk Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Eun Ae Jung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Seong Ho Han
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Jeong Hwan Han
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Bo Keun Park
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Chang Gyoun Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Taek-Mo Chung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
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14
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Lim YR, Im HS, Cho YJ, Park J, Cha EH, Cho WI. Composition-tuned SnxGe1−xS nanocrystals for enhanced-performance lithium ion batteries. RSC Adv 2014. [DOI: 10.1039/c4ra08886g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Complete composition-tuned SnxGe1−xS alloy nanocrystals exhibit excellent cycling performances in lithium ion batteries, with the greatest rate capability for Sn-rich compositions.
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Affiliation(s)
- Young Rok Lim
- Department of Chemistry
- Korea University
- Jochiwon 339-700, Korea
| | - Hyung Soon Im
- Department of Chemistry
- Korea University
- Jochiwon 339-700, Korea
| | - Yong Jae Cho
- Department of Chemistry
- Korea University
- Jochiwon 339-700, Korea
| | - Jeunghee Park
- Department of Chemistry
- Korea University
- Jochiwon 339-700, Korea
| | - Eun Hee Cha
- Department of Pharmaceutical Engineering
- Hoseo University
- Chungnam 336-795, Korea
| | - Won Il Cho
- Center for Energy Convergence
- Korea Institute of Science and Technology
- Seoul 136-791, Korea
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