1
|
Nguyen HTT. Structural evolution of in-plane hybrid graphene/hexagonal boron nitride heterostructure upon heating. J Mol Graph Model 2023; 125:108579. [PMID: 37549497 DOI: 10.1016/j.jmgm.2023.108579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Revised: 07/26/2023] [Accepted: 07/27/2023] [Indexed: 08/09/2023]
Abstract
In-plane hybrid graphene/hexagonal boron nitride (h-BN) heterostructure (graphene/hBN/graphene) is studied via molecular dynamics simulation. The initial configuration (6400-atom graphene/6200-atom h-BN/6400-atom graphene) is heated up from 50 K to 7500 K via Tersoff potential. To study the structural evolution, some thermal dynamics quantities are calculated such as the coordination number, the total energy per atom, the heat capacity, the angular distribution, and the distribution of rings. Some main results are calculated and presented as follows: i) The sudden increase of total energy per atom at the melting point (5500 K) exhibits the first order phase transition from the crystalline state to a liquid state of the hybrid graphene/h-BN/graphene heterostructure; ii) The heat capacity shows two peaks. The first peak (at 5500 K) represents the phase transition from the crystalline to a liquid states while the second one (at 6300 K) represents the formation of gaseous atoms of B and N in the h-BN sheet; iii) The coordination number of three decreases dramatically at temperature of 5500 K (about 10% lefts for each type of atoms) leading to the formation of the first peak in the graph of the heat capacity. The coordination number of zero for B and N in the h-BN layer increases significantly (over 55%) at 6300 K causing the formation of the second peak in the graph of the heat capacity; iv) The influence of the relative number of atoms of h-BN to graphene in the hybrid graphene/h-BN/graphene heterostructure on the structural evolution upon heating is considered as follows. The number of atoms in the graphene sheets remains constant (6400 atoms per sheet) while the one of the h-BN sheet varies in size (780, 1560, 3120, 4680, 5490, 5880, 6080, and 6200 atoms). The results show that although the phase transition is still the first order type, the phase transition temperature decreases as the size of the h-BN layer in the hybrid heterostructure increases.
Collapse
Affiliation(s)
- Hang T T Nguyen
- Faculty of Aplied Science, Ho Chi Minh City University of Technology (HCMUT), 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City, Viet Nam; Vietnam National University Ho Chi Minh City, Linh Trung Ward, Thu Duc City, Ho Chi Minh City, Viet Nam.
| |
Collapse
|
2
|
Hu C, Lin L, Xu Y, Tao H, Zhang Z. Different Doping of VSe 2 Monolayers as Adsorbent and Gas Sensing Material for Scavenging and Detecting SF 6 Decomposed Species. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:2618-2630. [PMID: 36775933 DOI: 10.1021/acs.langmuir.2c03018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The application of intrinsic and transition metals (TM)-doped VSe2 monolayers for the detection of faulty gases in SF6 electrical insulated equipment is investigated based on first-principles calculations. The electron density difference, density of state, and adsorption energy are analyzed to further clarify the reaction mechanism. The results show that the intrinsic VSe2 monolayer has weak adsorption performance for SO2 and SOF2 molecules, but the adsorption properties of the system are significantly improved after doping TM atoms. Among them, the TM-doped VSe2 monolayer has better sensing performance for SO2 than for SOF2 molecules. Furthermore, the modulating effect of biaxial strain on the gas-sensitive properties of TM-doped VSe2 system is also analyzed. Finally, the recovery time of the gas molecules on the solid adsorbent is evaluated. The results confirm that the TM-doped VSe2 monolayer can be used as a novel sensing material or scavenger to ensure the normal operation of SF6 electrical insulated equipment. This will provide a prospective insight for experimenters to implement VSe2-based sensing materials or scavengers.
Collapse
Affiliation(s)
- Chencheng Hu
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan, China
| | - Long Lin
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan, China
| | - Yonghao Xu
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan, China
| | - Hualong Tao
- Liaoning Key Materials Laboratory for Railway, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning, China
| | - Zhanying Zhang
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan, China
| |
Collapse
|
3
|
Zhang Z, Liu P, Song Y, Hou Y, Xu B, Liao T, Zhang H, Guo J, Sun Z. Heterostructure Engineering of 2D Superlattice Materials for Electrocatalysis. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204297. [PMID: 36266983 PMCID: PMC9762311 DOI: 10.1002/advs.202204297] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2022] [Revised: 09/23/2022] [Indexed: 06/16/2023]
Abstract
Exploring low-cost and high-efficient electrocatalyst is an exigent task in developing novel sustainable energy conversion systems, such as fuel cells and electrocatalytic fuel generations. 2D materials, specifically 2D superlattice materials focused here, featured highly accessible active areas, high density of active sites, and high compatibility with property-complementary materials to form heterostructures with desired synergetic effects, have demonstrated to be promising electrocatalysts for boosting the performance of sustainable energy conversion and storage devices. Nevertheless, the reaction kinetics, and in particular, the functional mechanisms of the 2D superlattice-based catalysts yet remain ambiguous. In this review, based on the recent progress of 2D superlattice materials in electrocatalysis applications, the rational design and fabrication of 2D superlattices are first summarized and the application of 2D superlattices in electrocatalysis is then specifically discussed. Finally, perspectives on the current challenges and the strategies for the future design of 2D superlattice materials are outlined. This review attempts to establish an intrinsic correlation between the 2D superlattice heterostructures and the catalytic properties, so as to provide some insights into developing high-performance electrocatalysts for next-generation sustainable energy conversion and storage.
Collapse
Affiliation(s)
- Zhen Zhang
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Peizhi Liu
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Yanhui Song
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Ying Hou
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Bingshe Xu
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
- Materials Institute of Atomic and Molecular ScienceShaanxi University of Science & TechnologyXi'an710021P. R. China
| | - Ting Liao
- School of MechanicalMedical and Process EngineeringQueensland University of TechnologyBrisbaneQLD4000Australia
| | - Haixia Zhang
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Junjie Guo
- Key Laboratory of Interface Science and Engineering in Advanced MaterialsMinistry of EducationTaiyuan University of TechnologyTaiyuan030024P. R. China
| | - Ziqi Sun
- School of Chemistry and PhysicsQueensland University of TechnologyBrisbaneQLD4000Australia
| |
Collapse
|
4
|
Wang X, Zhang S, Wang Y, Yu S, Huang B, Dai Y, Wei W. Structural engineering brings new electronic properties to Janus ZrSSe and HfSSe monolayers. Phys Chem Chem Phys 2022; 24:17824-17831. [PMID: 35851908 DOI: 10.1039/d2cp01928k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Interfacing effects within emergent two-dimensional (2D) materials are of fundamental interest and are at the center of applications in nanoelectronics. Thus, out-of-plane and in-plane heterostructures as well as electronic heterostructures with phase boundaries and large-angle (60°) grain boundaries (GBs) of Janus ZrSSe and HfSSe are studied in this work using first-principles calculations. The out-of-plane heterostructures of T-ZrSSe and T-HfSSe illustrate quite weak interfacing interactions, thus the electronic properties are, unusually, more like the superposition of individual monolayers. The in-plane heterostructures of T-ZrSSe and T-HfSSe, interestingly, exhibit an indirect-direct band gap transition and type-II band alignment, which correspond to boosted optical properties and spatially separated excitons. For the in-plane electronic heterostructures that are constituted by T-ZrSSe and H-ZrSSe, semiconductor-metal crossover occurs due to the polar discontinuity across the T-H phase boundary, and they behave as one-dimensional metallic wires embedded in otherwise semiconducting Janus ZrSSe, creating a one-dimensional electron/hole gas. This also indicates a strategy for stabilizing the unstable and/or metastable monolayer via the phase boundary. As a result of the zero formal bulk polarization of the T-phase ZrSSe, the metallicity of 60° GBs originates mainly from the edge atoms rather than from the polar discontinuity.
Collapse
Affiliation(s)
- Xinxin Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Shuhui Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Yuanyuan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Shiqiang Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| |
Collapse
|
5
|
Li D, Rao X, Zhang L, Zhang Y, Ma S, Chen L, Yu Z. First-Principle Insight into the Ru-Doped PtSe 2 Monolayer for Detection of H 2 and C 2H 2 in Transformer Oil. ACS OMEGA 2020; 5:31872-31879. [PMID: 33344841 PMCID: PMC7745447 DOI: 10.1021/acsomega.0c04718] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2020] [Accepted: 11/13/2020] [Indexed: 06/12/2023]
Abstract
Using first-principles theory, this paper investigates the sensing behavior of the Ru-doped PtSe2 (Ru-PtSe2) monolayer for two dominant gases, namely, H2 and C2H2, in the transformer oil to explore its potential as a gas sensor to evaluate the operation status of the electrical transformers. Ru-doping prefers to go through the S1 site with the largest E b of -3.71 eV. Chemisorption is identified in the H2 and C2H2 systems with E ad obtained as -0.83 and - 2.09 eV, respectively, indicating the stronger performance of the Ru-PtSe2 monolayer upon C2H2 adsorption. Meanwhile, the obvious improvement of bandgap in the C2H2 system suggests the potential of Ru-PtSe2 monolayer as a resistance-type gas sensor for C2H2 detection. Moreover, the applied biaxial strains ranging at 1-5% give rise to various Q T and E g in two systems, indicating the tunable sensing response of the Ru-PtSe2 monolayer for gas detection with modulated strains. Our calculation proposes a novel 2D sensing material for H2 and C2H2 detection, which would be beneficial to stimulate more edge-cutting research in the gas sensing field as well.
Collapse
|
6
|
Yu S, Wei W, Li F, Huang B, Dai Y. Electronic properties of Janus MXY/graphene (M = Mo, W; X ≠ Y = S, Se) van der Waals structures: a first-principles study. Phys Chem Chem Phys 2020; 22:25675-25684. [PMID: 33146159 DOI: 10.1039/d0cp04323k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Based on the first-principles calculations, we studied the intrinsic dipole moment and electronic properties of Janus MXY (M = Mo, W; X ≠ Y = S, Se) monolayers, bilayers and heterostructures with graphene, and the possibility of MXY encapsulating graphene. The results show that Janus MXY monolayer has an intrinsic dipole moment and a direct band gap. However, for MXY bilayers strong interlayer coupling will cause direct to indirect band gap transition, and the existence of the dipole moment leads to a significantly large interlayer band offset, being the driving force for the formation of interlayer excitons. In MXY/graphene heterostructures, changes in the direction of intrinsic dipole moment will cause a change in Schottky barrier height and even the transition between p- and n-type Schottky contacts. Independent of the interface atomic layer of Janus MXY, on one hand, the Dirac cone still exists in graphene, proving that MXY is an ideal coating material. On the other hand, the type-II band alignment will disappear as the intrinsic dipole moment disappears, confirming that the intrinsic dipole moment plays a vital role in the formation of a large band offset. Our results provide guidance for the study of interlayer excitonic states, the experimental construction of atomically thin p-n junctions and the encapsulation of graphene.
Collapse
Affiliation(s)
- Shiqiang Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | | | | | | | | |
Collapse
|
7
|
Golsanamlou Z, Sementa L, Cusati T, Iannaccone G, Fortunelli A. Theoretical Analysis of a 2D Metallic/Semiconducting Transition‐Metal Dichalcogenide NbS
2
//WSe
2
Hybrid Interface. ADVANCED THEORY AND SIMULATIONS 2020. [DOI: 10.1002/adts.202000164] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Zahra Golsanamlou
- CNR‐ICCOM and IPCF Consiglio Nazionale delle Ricerche via G. Moruzzi 1 Pisa 56124 Italy
| | - Luca Sementa
- CNR‐ICCOM and IPCF Consiglio Nazionale delle Ricerche via G. Moruzzi 1 Pisa 56124 Italy
| | - Teresa Cusati
- Dipartimento di Ingegneria dell'Informazione Università di Pisa Via G. Caruso 16 Pisa 56122 Italy
| | - Giuseppe Iannaccone
- Dipartimento di Ingegneria dell'Informazione Università di Pisa Via G. Caruso 16 Pisa 56122 Italy
| | - Alessandro Fortunelli
- CNR‐ICCOM and IPCF Consiglio Nazionale delle Ricerche via G. Moruzzi 1 Pisa 56124 Italy
| |
Collapse
|
8
|
Zhang RS, Cao HY, Jiang JW. Tunable thermal expansion coefficient of transition-metal dichalcogenide lateral heterostructures. NANOTECHNOLOGY 2020; 31:405709. [PMID: 32521524 DOI: 10.1088/1361-6528/ab9b48] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The thermal expansion effect plays an important role in governing the thermal stability or the stable configuration of quasi-two-dimensional atomic layers, where the difference between the thermal expansion coefficient of different kinds of atomic layer in lateral heterostructure may cause strong thermal rippling of the atomic layer. We investigate the thermal expansion phenomenon in the WSe2-MoS2 lateral heterostructure. We find that the thermal expansion coefficient can be enhanced by more than a factor of two via varying the ratio between the WSe2 and MoS2 components in the heterostructure. The underlying mechanism is disclosed to be the buckling of the WSe2 region that is induced by the misfit strain at the coherent interface between WSe2 and MoS2. These findings shall be helpful in handling the thermal stability of functional devices based on the transition-metal dichalcogenide lateral heterostructures and other similar quasi-two-dimensional lateral heterostructures.
Collapse
Affiliation(s)
- Run-Sen Zhang
- Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, School of Mechanics and Engineering Science, Shanghai University, Shanghai 200072, People's Republic of China
| | | | | |
Collapse
|
9
|
Cao J, Zhou J, Liu J, Wang W, Chen J, Shi J, Zhang Y, Liu X. Sensing Behavior of Two Dimensional Al- and P-Doped WS 2 Toward NO, NO 2, and SO 2: an Ab Initio Study. NANOSCALE RESEARCH LETTERS 2020; 15:158. [PMID: 32757081 PMCID: PMC7406579 DOI: 10.1186/s11671-020-03391-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2020] [Accepted: 07/27/2020] [Indexed: 06/11/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs), such as WS2, are considered to have the potential for high-performance gas sensors. It is a pity that the interaction between gases and pristine 2D WS2 as the sensitive element is too weak so that the sensor response is difficult to detect. Herein, the sensing capabilities of Al- and P-doped WS2 to NO, NO2, and SO2 were evaluated. Especially, we considered selectivity to target gases and dopant concentration. Molecular models of the adsorption systems were constructed, and density functional theory (DFT) was used to explore the adsorption behaviors of these gases from the perspective of binding energy, band structure, and density of states (DOS). The results suggested that doping atoms could increase the adsorption strength between gas molecules and substrate. Besides, the sensitivity of P-doped WS2 to NO and NO2 was hardly affected by CO2 or H2O. The sensitivity of Al-doped WS2 to NO2 and SO2 was also hard to be affected by CO2 or H2O. For NO detection, the WS2 with 7.4% dopant concentration had better sensitive properties than that with a 3.7% dopant concentration. While for SO2, the result was just the opposite. This work provided a comprehensive reference for choosing appropriate dopants (concentration) into 2D materials for sensing noxious gases.
Collapse
Affiliation(s)
- Jiamu Cao
- School of Astronautics, Harbin Institute of Technology, Harbin, China.
- Key Laboratory of Micro-systems and Micro-Structures Manufacturing, Ministry of Education, Harbin, China.
- MEMS Center, Harbin Institute of Technology, Harbin, China.
| | - Jing Zhou
- School of Astronautics, Harbin Institute of Technology, Harbin, China
| | - Junfeng Liu
- School of Astronautics, Harbin Institute of Technology, Harbin, China
| | - Weiqi Wang
- School of Astronautics, Harbin Institute of Technology, Harbin, China
| | - Junyu Chen
- School of Astronautics, Harbin Institute of Technology, Harbin, China
| | - Jianing Shi
- School of Astronautics, Harbin Institute of Technology, Harbin, China
| | - Yufeng Zhang
- School of Astronautics, Harbin Institute of Technology, Harbin, China
- Key Laboratory of Micro-systems and Micro-Structures Manufacturing, Ministry of Education, Harbin, China
- MEMS Center, Harbin Institute of Technology, Harbin, China
| | - Xiaowei Liu
- School of Astronautics, Harbin Institute of Technology, Harbin, China
- Key Laboratory of Micro-systems and Micro-Structures Manufacturing, Ministry of Education, Harbin, China
- MEMS Center, Harbin Institute of Technology, Harbin, China
| |
Collapse
|
10
|
Tan R, Lei Y, Li L, Shi S. Toward lateral heterostructures with two-dimensional MoX 2H 2 (X = As, Sb). Phys Chem Chem Phys 2020; 22:22584-22590. [PMID: 33000832 DOI: 10.1039/d0cp03530k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The development of two-dimensional (2D) lateral heterostructures (LHs) with the powerful tunability of electronic properties will be of great realistic significance for next-generation device applications. Herein, we report the novel 2D MoX2 and MoX2H2 (X = As or Sb) monolayer materials with excellent stability. Using first-principles calculations, we demonstrated that 2D MoX2 layers possess the metallic characteristic while the full surface hydrogenation effect would play a role in stabilizing the 2D lattices and lead to band gap openings of 0.83 and 0.50 eV for the 2D MoAs2H2 and MoSb2H2, respectively. In addition, our results suggest that the 2D MoAs2H2 and MoSb2H2 can serve as the 'building blocks' to construct the seamless LHs exhibiting excellent thermal and dynamical stability. The obtained nL-MoAsSb LHs enable the fully tunable band gap engineering behavior with linear tendency as a function of the width of the in-plane components. The phase transition from direct to in-direct band gap was also confirmed in the LHs as the crucial value of n = 3. In view of the type-II band alignment and efficient carrier separation in nL-MoAsSb, the predicted MoX2H2 and nL-MoAsSb LHs not only highlight the promising candidates for 2D pristine materials, but also paves the way for the realization of practical integrating device applications.
Collapse
Affiliation(s)
- Ruishan Tan
- Department of Science, Shandong Jianzhu University, 250101 Jinan, P. R. China.
| | | | | | | |
Collapse
|
11
|
Tang Y, Li H, Mao X, Xie J, Lee JY, Fu A. Bidirectional heterostructures consisting of graphene and lateral MoS 2/WS 2 composites: a first-principles study. RSC Adv 2019; 9:34986-34994. [PMID: 35530718 PMCID: PMC9074164 DOI: 10.1039/c9ra05692k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2019] [Accepted: 10/20/2019] [Indexed: 11/21/2022] Open
Abstract
First-principles calculations have been performed to explore the structural and electronic properties of bidirectional heterostructures composed of graphene and (MoS2) X /(WS2)4-X (X = 1, 2, 3) lateral composites and compare them with those of heterobilayers formed by graphene and pristine MS2 (M = Mo, W). The band gaps of the lateral heterostructures lie between those of pristine MoS2 and WS2. The weak coupling between the two layers can induce a tiny band-gap opening of graphene and formation of an n-type Schottky contact at the G-(MoS2) X /(WS2)4-X interface. Moreover, the combination ratio of MoS2/WS2 can control the electronic properties of G-(MoS2) X /(WS2)4-X . By applying external electric fields, the band gaps of (MoS2) X /(WS2)4-X (X = 0, 1, 2, 3, 4) monolayers undergo a direct-indirect transition, and semiconductor-metal transitions can be found in WS2. External electric fields can also be used effectively to tune the binding energies, charge transfers, and band structures (the types of Schottky and Ohmic contacts) of G-(MoS2) X /(WS2)4-X heterostructures. These findings suggest that G-(MoS2) X /(WS2)4-X heterostructures can serve as high-performance nano-electronic devices.
Collapse
Affiliation(s)
- Yingqi Tang
- College of Chemistry and Chemical Engineering, State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University Qingdao 266071 China +86-531-85950768 +86-532-85950767
| | - Hao Li
- Department of Chemistry, Sungkyunkwan University Suwon 16419 Korea +82-031-290-7075 +82-031-299-4560
| | - Xiaotong Mao
- College of Chemistry and Chemical Engineering, State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University Qingdao 266071 China +86-531-85950768 +86-532-85950767
| | - Ju Xie
- College of Chemistry and Chemical Engineering, Yangzhou University Yangzhou 225002 China
| | - Jin Yong Lee
- Department of Chemistry, Sungkyunkwan University Suwon 16419 Korea +82-031-290-7075 +82-031-299-4560
| | - Aiping Fu
- College of Chemistry and Chemical Engineering, State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University Qingdao 266071 China +86-531-85950768 +86-532-85950767
| |
Collapse
|
12
|
Wei W, Huang B, Dai Y. Photoexcited charge carrier behaviors in solar energy conversion systems from theoretical simulations. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2019. [DOI: 10.1002/wcms.1441] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials Shandong University Jinan China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials Shandong University Jinan China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials Shandong University Jinan China
| |
Collapse
|
13
|
Ávalos-Ovando O, Mastrogiuseppe D, Ulloa SE. Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:213001. [PMID: 30794993 DOI: 10.1088/1361-648x/ab0970] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The growth and exfoliation of two-dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be built as vertical van der Waals stacks, resulting in a 2D interface, or as stitched adjacent monolayer crystals, resulting in one-dimensional (1D) interfaces. Although most attention has been focused on vertical HSs, increasing theoretical and experimental interest in 1D interfaces is evident. In-plane interfacial states between different 2D materials inherit properties from both crystals, giving rise to robust states with unique 1D non-parabolic dispersion and strong spin-orbit effects. With such unique characteristics, these states provide an exciting platform for realizing 1D physics. Here, we review and discuss advances in 1D heterojunctions, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides MX 2 (with M = Mo, W and X = S, Se, Te), and how the interfacial states can be characterized and utilized. We also address how the interfaces depend on edge geometries (such as zigzag and armchair) or strain, as lattice parameters differ across the interface, and how these features affect excitonic/optical response. This review is intended to serve as a resource for promoting theoretical and experimental studies in this rapidly evolving field.
Collapse
Affiliation(s)
- O Ávalos-Ovando
- Department of Physics and Astronomy, and Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, OH 45701-2979, United States of America
| | | | | |
Collapse
|
14
|
Cui H, Zhang G, Zhang X, Tang J. Rh-doped MoSe 2 as a toxic gas scavenger: a first-principles study. NANOSCALE ADVANCES 2019; 1:772-780. [PMID: 36132262 PMCID: PMC9473182 DOI: 10.1039/c8na00233a] [Citation(s) in RCA: 92] [Impact Index Per Article: 18.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2018] [Accepted: 11/09/2018] [Indexed: 05/24/2023]
Abstract
Using first-principles theory, we investigated the most stable configuration for the Rh dopant on a MoSe2 monolayer, and the interaction of the Rh-doped MoSe2 (Rh-MoSe2) monolayer with four toxic gases (CO, NO, NO2 and SO2) to exploit the potential application of the Rh-MoS2 monolayer as a gas sensor or adsorbent. Based on adsorption behavior comparison with other 2D adsorbents and desorption behavior analysis, we assume that the Rh-MoSe2 monolayer is a desirable adsorbent for CO, NO and NO2 storage or removal given the larger adsorption energy (E ad) of -2.00, -2.56 and -1.88 eV, respectively, compared with other materials. In the meanwhile, the Rh-MoSe2 monolayer is a good sensing material for SO2 detection according to its desirable adsorption and desorption behaviors towards the target molecule. Our theoretical calculation would provide a first insight into the TM-doping effect on the structural and electronic properties of the MoSe2 monolayer, and shed light on the application of Rh-MoSe2 for the sensing or disposal of common toxic gases.
Collapse
Affiliation(s)
- Hao Cui
- State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University Chongqing 400044 China
- School of Electrical and Computer Engineering, Georgia Institute of Technology Atlanta 30332 GA USA
| | - Guozhi Zhang
- School of Electrical Engineering, Wuhan University Wuhan 430072 China
| | - Xiaoxing Zhang
- State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University Chongqing 400044 China
- School of Electrical Engineering, Wuhan University Wuhan 430072 China
| | - Ju Tang
- School of Electrical Engineering, Wuhan University Wuhan 430072 China
| |
Collapse
|
15
|
Hao H, Xu Z, Jiang T, Wei K, Li H, Zheng X, Yin K, You J, Shen C, Cheng XA. Visualized charge transfer processes in monolayer composition-graded WS 2xSe 2(1-x) lateral heterojunctions via ultrafast microscopy mapping. OPTICS EXPRESS 2018; 26:15867-15886. [PMID: 30114841 DOI: 10.1364/oe.26.015867] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2018] [Accepted: 05/21/2018] [Indexed: 06/08/2023]
Abstract
Two-dimensional transitional metal dichalcogenides (TMDCs) based lateral heterojunctions have emerged as appealing and intriguing materials for applications in the next generation flexible nanoelectronics. The construction of depletion region near the in-plane interface brings rich opto-electrical dynamics, which is essential for future applications. Due to the synchronous requirement of spatial and time resolution, the study of lateral heterojunction dynamics remains a challenging issue. Herein, with a home-built spatiotemporal femtosecond transient absorption (TAS) spectroscopy platform, we have investigated the ultrafast photocarrier dynamics of monolayer spatial composition-graded WS2xSe2(1-x) lateral heterojunctions. At the alloy interface, the charge transfer (CT) processes have been visualized and referred to occur in 1 ps time scale. The mobility difference between electrons and holes results in the space modulation of the interface and a significant broadening of rising edge on the shell region. Moreover, carrier lifetime near the interface is extraordinarily extended by over 3 times from 153 ps to 678 ps. All these results unveil its great potential in designing future low cost logic devices and ultrafast optical applications.
Collapse
|
16
|
Wei W, Dai Y, Huang B. Straintronics in two-dimensional in-plane heterostructures of transition-metal dichalcogenides. Phys Chem Chem Phys 2018; 19:663-672. [PMID: 27918042 DOI: 10.1039/c6cp07823k] [Citation(s) in RCA: 52] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
For in-plane heterostructures between 2D transition-metal dichalcogenides (TMDs), namely, MoSe2/MoS2, MoS2/MoSe2, WSe2/MoS2 and MoS2/WSe2, intrinsic strain can be introduced resulting from lattice mismatch between two constituents, which significantly influences electronic properties (straintronics). Intrinsic strain can reduce or decrease the coupling strength between nonmetal p and metal d orbitals, and therefore modifies the splitting between bonding and antibonding states at the high-symmetry k-points. In this case, relative upward or downward shift of band edge at specific k-points leads to band gap reduction or enhancement and the indirect-direct band gap transition. Upon consideration of spin-orbit coupling (SOC) effects, energy splitting in valence bands will further shift the band edge at a specific k-point, and changes the band gap nature, such as indirect-direct band gap transition. It is of interest that intense states hybridization exists within the interline region, and therefore band alignments for in-plane heterostructures of 2D TMDs should be reconsidered, which is crucial for transport and optical features. In addition, states hybridization plays a role in the amplitude of band edge shift since individual 2D TMDs present different resistance to the strain. However, we found that intrinsic strain has no effects on the SOC-induced energy splitting in valence bands of these in-plane heterostructures, while the extent of states hybridization determines the magnitude of energy splitting. In addition, charge transfer across the interline also has effects on the band gap. In the presence of strain, the bonding strength of two 2D TMDs is reduced.
Collapse
Affiliation(s)
- Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| |
Collapse
|
17
|
Zhao P, Li J, Jin H, Yu L, Huang B, Ying D. Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides. Phys Chem Chem Phys 2018; 20:10286-10291. [DOI: 10.1039/c8cp00557e] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
A robust spin-filtering device based on two-dimensional TMDs.
Collapse
Affiliation(s)
- Pei Zhao
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Jianwei Li
- College of Physics and Energy
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- Shenzhen University
- Shenzhen 518060
- People's Republic of China
| | - Hao Jin
- College of Physics and Energy
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- Shenzhen University
- Shenzhen 518060
- People's Republic of China
| | - Lin Yu
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Dai Ying
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| |
Collapse
|
18
|
Hu Y, Mao C, Yan Z, Shu T, Ni H, Xue L, Wu Y. Effects of stacking method and strain on the electronic properties of the few-layer group-IVA monochalcogenide heterojunctions. RSC Adv 2018; 8:29862-29870. [PMID: 35547281 PMCID: PMC9085287 DOI: 10.1039/c8ra05086d] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2018] [Accepted: 08/05/2018] [Indexed: 11/24/2022] Open
Abstract
Group-IV monochalcogenides (GeSe, SnSe, GeS, SnS) are a class of promising monolayer materials for nanoelectronic applications. However, the GeSe monolayer is the only direct semiconductor in the group-IV monochalcogenides, which limits their application in nanoelectronic fields. Stacking is usually a good strategy to design two-dimensional (2D) materials with novel properties. Taking these monolayer monochalcogenides as basic building blocks, various van der Waals (vdW) heterojunctions can be constructed by different stacking methods. In this study, we systematically investigated the structures, stabilities and electronic properties of thirty-six few-layer group-IV monochalcogenide heterojunctions. All the vdW heterojunctions are proved to be stable. The degree of stability of the few-layer heterojunctions is found to increase with the number of layers. The band gap values of heterojunctions are dependent not only on the components, but also on the stacking order. Five novel 2D direct semiconductors (SnSe/GeSe, GeS/SnS, SnSe/GeSe/SnSe, SnS/GeSe/SnSe and SnS/GeSe/SnSe) are obtained. It's found that biaxial strain can not only tune the values of band gap, but also change the type of the 2D materials. The band gaps of the heterojunctions monotonically increase with the increasing strain and most few-layer heterojunctions transform between direct and indirect semiconductors under biaxial strain. Five heterojunctions (SnSe/GeSe, GeS/SnS, GeSe/SnSe/SnS, SnS/GeSe/SnSe and GeSe/SnS/GeS/SnSe) are found to remain as direct semiconductors under tensile strain (0–0.1). Since the band gaps of these heterojunctions are easy to control in a suitable range, they may have potential applications in nanoelectronic fields. We studied the effect of stacking method and biaxial strain on the electronic properties of the few-layer group-IV monochalcogenides heterojunction.![]()
Collapse
Affiliation(s)
- Yonghong Hu
- School of Nuclear Technology and Chemistry & Biology
- Hubei University of Science and Technology
- Xianning 437100
- China
| | - Caixia Mao
- School of Nuclear Technology and Chemistry & Biology
- Hubei University of Science and Technology
- Xianning 437100
- China
| | - Zhong Yan
- College of Material Science and Engineering
- Nanjing University of Science and Technology
- Nanjing 210094
- China
| | - Ting Shu
- School of Nuclear Technology and Chemistry & Biology
- Hubei University of Science and Technology
- Xianning 437100
- China
| | - Hao Ni
- School of Nuclear Technology and Chemistry & Biology
- Hubei University of Science and Technology
- Xianning 437100
- China
| | - Li Xue
- School of Nuclear Technology and Chemistry & Biology
- Hubei University of Science and Technology
- Xianning 437100
- China
| | - Yunyi Wu
- Department of Electrical Engineering
- The Hong Kong Polytechnic University
- Kowloon
- Hong Kong
| |
Collapse
|
19
|
Zhao J, Cheng K, Han N, Zhang J. Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2017. [DOI: 10.1002/wcms.1353] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Affiliation(s)
- Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Kai Cheng
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Nannan Han
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Junfeng Zhang
- School of Physics and Information Engineering; Shanxi Normal University; Linfen China
| |
Collapse
|
20
|
Abbasi A, Sardroodi JJ. Density functional theory (DFT) study of O3 molecules adsorbed on nitrogen-doped TiO2/MoS2 nanocomposites: applications to gas sensor devices. JOURNAL OF THE IRANIAN CHEMICAL SOCIETY 2017. [DOI: 10.1007/s13738-017-1196-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
|
21
|
Zhao P, Wei W, Sun Q, Yu L, Huang B, Dai Y. In-plane heterostructures of Sb/Bi with high carrier mobility. NANOTECHNOLOGY 2017; 28:255201. [PMID: 28561010 DOI: 10.1088/1361-6528/aa71c4] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (∼4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.
Collapse
Affiliation(s)
- Pei Zhao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China
| | | | | | | | | | | |
Collapse
|
22
|
Abbasi A, Jahanbin Sardroodi J. Prediction of a highly sensitive molecule sensor for SOx detection based on TiO2/MoS2 nanocomposites: a DFT study. J Sulphur Chem 2016. [DOI: 10.1080/17415993.2016.1229782] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
Affiliation(s)
- Amirali Abbasi
- Molecular Simulation Laboratory (MSL), Azarbaijan Shahid Madani University, Tabriz, Iran
- Computational Nanomaterials Research Group (CNRG), Azarbaijan Shahid Madani University, Tabriz, Iran
- Department of Chemistry, Faculty of Basic Sciences, Azarbaijan Shahid Madani University, Tabriz, Iran
| | - Jaber Jahanbin Sardroodi
- Molecular Simulation Laboratory (MSL), Azarbaijan Shahid Madani University, Tabriz, Iran
- Computational Nanomaterials Research Group (CNRG), Azarbaijan Shahid Madani University, Tabriz, Iran
- Department of Chemistry, Faculty of Basic Sciences, Azarbaijan Shahid Madani University, Tabriz, Iran
| |
Collapse
|