Interaction between H2O, N2, CO, NO, NO2 and N2O molecules and a defective WSe2 monolayer

Recent Advances in Chemoresistive Gas Sensors Using Two-Dimensional Materials

Two-dimensional (2D) materials have emerged as a promising candidate in the chemoresistive gas sensor field to overcome the disadvantages of conventional metal-oxide semiconductors owing to their strong surface activities and high surface-to-volume ratio. This review summarizes the various approaches to enhance the 2D-material-based gas sensors and provides an overview of their progress. The distinctive attributes of semiconductor gas sensors employing 2D materials will be highlighted with their inherent advantages and associated challenges. The general operating principles of semiconductor gas sensors and the unique characteristics of 2D materials in gas-sensing mechanisms will be explored. The pros and cons of 2D materials in gas-sensing channels are discussed, and a route to overcome the current challenges will be delivered. Finally, the recent advancements to enhance the performance of 2D-material-based gas sensors including photo-activation, heteroatom doping, defect engineering, heterostructures, and nanostructures will be discussed. This review should offer a broad range of readers a new perspective toward the future development of 2D-material-based gas sensors.

Adsorption of NO2, SO2, H2S, and NH3 on Os-Doped WSe2 Monolayers: A First-Principles Study

In this study, DFT calculations are used to analyze the adsorption of industrial waste gases (NO2, SO2, H2S, and NH3) on WSe2 monolayers. The adsorption energy, energy band, density of states, charge transfer, and recovery time of the adsorption structures between the target gas molecules and the Os-doped WSe2 are studied. Compared with pure WSe2 monolayer, Os surface bonding doping WSe2 (Os-modified WSe2) and Os doping with Se vacancy of WSe2 (Os-embedded WSe2) exhibit improved gas molecule adsorption ability. Among them, the adsorption energy of the Os-modified WSe2 monolayer on NO2, SO2, H2S, and NH3 is greater than that of the WSe2 monolayer. At the same time, it is proved that the Os-embedded WSe2 can be used as a gas sensor for H2S and NH3 gas molecules at a high temperature.

The Adsorption Mechanisms of SF6-Decomposed Species on Tc- and Ru-Embedded Phthalocyanine Surfaces: A Density Functional Theory Study

Designing high-performance materials for the detection or removal of toxic decomposition gases of sulfur hexafluoride is crucial for both environmental monitoring and human health preservation. Based on first-principles calculations, the adsorption performance and gas-sensing properties of unsubstituted phthalocyanine (H2Pc) and H2Pc doped with 4d transition metal atoms (TM = Tc and Ru) towards five characteristic decomposition components (HF, H2S, SO2, SOF2, and SO2F2) were simulated. The findings indicate that both the TcPc and RuPc monolayers are thermodynamically and dynamically stable. The analysis of the adsorption energy indicates that H2S, SO2, SOF2, and SO2F2 underwent chemisorption on the TcPc monolayer. Conversely, the HF molecules were physisorbed through interactions with H atoms. The chemical adsorption of H2S, SO2, and SOF2 occurred on the RuPc monolayer, while the physical adsorption of HF and SO2F2 molecules was observed. Moreover, the microcosmic mechanism of the gas-adsorbent interaction was elucidated by analyzing the charge density differences, electron density distributions, Hirshfeld charges, and density of states. The TcPc and RuPc monolayers exhibited excellent sensitivity towards H2S, SO2, and SOF2, as evidenced by the substantial alterations in the band gaps and work functions of the TcPc and RuPc nanosheets. Our calculations hold significant value for exploring the potential chemical sensing applications of TcPc and RuPc monolayers in gas sensing, with a specific focus on detecting sulfur hexafluoride.

Efficient immobilization and detoxification of gaseous elemental mercury by nanoflower/rod WSe2/halloysite composite: Performance and mechanisms

Gaseous mercury pollution control technologies with low stability and high releasing risks always face with great challenges. Herein, we developed one halloysite nanotubes (HNTs)-supported tungsten diselenide (WSe2) composite (WSe2/HNTs) by one-pot solvothermal approach, curing Hg0 from complicated flue gas (CFG) and reducing second environment risks. WSe2 as a monolayer with nano-flower structure and HNTs with rod shapes in the as-prepared sorbent exhibited outstanding synergy efficiency, resulting in exceptional performance for Hg0 removal with high capture capacity of 30.6 mg·g-1 and rate of 9.09 μg·g-1·min-1, which benefited from the high affinity of selenium and mercury (1 ×1045) and the adequate exposure of Se-terminated. The adsorbent showed beneficial tolerance to high amount of NOx and SOx. An online lab-built thermal decomposition system (TPD-AFS) was employed to explore Hg species on the used-sorbent, finding that the adsorbed-mercury species were principally mercury selenide (HgSe). Density functional theory calculations indicated that the hollow-sites were the major adsorption sites and exhibited excellent selectivity for Hg0, as well as HgSe generation needed to overcome the 0.32 eV energy barrier. The adsorbed mercury displayed high environmental stability after the leaching toxicity test, which significantly decreased its secondary environmental risks. With these advantages, WSe2/HNTs possess enormous potential to achieve the effective and permanent immobilization of gaseous mercury from CFG in the future.

Defect-Engineering of 2D Dichalcogenide VSe2 to Enhance Ammonia Sensing: Acumens from DFT Calculations

Opportune sensing of ammonia (NH₃) gas is industrially important for avoiding hazards. With the advent of nanostructured 2D materials, it is felt vital to miniaturize the detector architecture so as to attain more and more efficacy with simultaneous cost reduction. Adaptation of layered transition metal dichalcogenide as the host may be a potential answer to such challenges. The current study presents a theoretical in-depth analysis regarding improvement in efficient detection of NH₃ using layered vanadium di-selenide (VSe₂) with the introduction of point defects. The poor affinity between VSe₂ and NH₃ forbids the use of the former in the nano-sensing device's fabrications. The adsorption and electronic properties of VSe₂ nanomaterials can be tuned with defect induction, which would modulate the sensing properties. The introduction of Se vacancy to pristine VSe₂ was found to cause about an eight-fold increase (from -012 eV to -0.97 eV) in adsorption energy. A charge transfer from the N 2p orbital of NH₃ to the V 3d orbital of VSe₂ has been observed to cause appreciable NH₃ detection by VSe₂. In addition to that, the stability of the best-defected system has been confirmed through molecular dynamics simulation, and the possibility of repeated usability has been analyzed for calculating recovery time. Our theoretical results clearly indicate that Se-vacant layered VSe₂ can be an efficient NH₃ sensor if practically produced in the future. The presented results will thus potentially be useful for experimentalists in designing and developing VSe₂-based NH₃ sensors.

Efficient direct conversion of methane into methanol on CuZn hetero-diatomic catalysts with certain coordination spheres: a DFT study

The oxidation of methane to a high-value-added chemical, methanol, is a major challenge in catalysis, requiring high energy input to overcome the CH₃-H bond activation energy barrier. Based on density functional theory (DFT) calculations, methane oxidation to methanol is catalyzed by hetero-diatomic catalysts (CuZn-NG) with different coordination spheres (CSs). Valence band maximum (VBM), atomic charge and d-band center are selected as analysis methods for the pathway selection and activity of catalysis. The VBM plays a vital role in the catalytic pathway selection, CuZn-NG catalyzes the direct conversion of methane into methanol without side reactions. Alarmingly, the most important reaction step, CH₃-H bond activation, is a spontaneously exothermic reaction (releasing 0.06 eV) with CuZn-N_PAG as the catalyst, in contrast to most other endothermic reactions in the same activation. By analyzing the atomic charge of the Cu center and O atom, the special electronic phenomenon for this important step is summarized as the "bow-release effect". The CS affects the electronic properties of the active center and further affects the methane oxidation activity. This work provides a useful guide to understand the catalytic selectivity and activity of hetero-diatomic catalysts.

Interaction of gases with monolayer WS2: an in situ spectroscopy study

The optical and electronic properties of two-dimensional (2D) materials can be tuned through physical and chemical adsorption of gases. They are also ideal sensor platforms, where charge transfer from the adsorbate can induce a measurable change in the electrical resistance within a device configuration. While 2D materials-based gas sensors exhibit high sensitivity, questions exist regarding the direction of charge transfer and the role of lattice defects during sensing. Here we measured the dynamics of adsorption of NO2 and NH3 on monolayer WS2 using in situ photoluminescence (PL) and resonance Raman spectroscopy. Experiments were conducted across a temperature range of 25-250 °C and gas concentrations between 5-650 ppm. The PL emission energies blue- and red-shifted when exposed to NO2 and NH3, respectively, and the magnitude of the shift depended on the gas concentration as well as the temperature down to the lowest concentration of 5 ppm. Analysis of the adsorption kinetics revealed an exponential increase in the intensities of the trion peaks with temperature, with apparent activation energies similar to barriers for migration of sulfur vacancies in the WS2 lattice. The corresponding Resonance Raman spectra allowed the simultaneous measurement of the defect-induced LA mode. A positive correlation between the defect densities and the shifts in the PL emission energies establish lattice defects such as sulfur vacancies as the preferential sites for gas adsorption. Moreover, an increase in defect densities with temperature in the presence of NO2 and NH3 suggests that these gases may also play a role in the creation of lattice defects. Our study provides key mechanistic insights into gas adsorption on monolayer WS2, and highlights the potential for future development of spectroscopy-based gas sensors based on 2D materials.

First-Principles Study of Au-Doped InN Monolayer as Adsorbent and Gas Sensing Material for SF6 Decomposed Species

As an insulating medium, sulfur hexafluoride (SF₆) is extensively applied to electrical insulation equipment to ensure its normal operation. However, both partial discharge and overheating may cause SF₆ to decompose, and then the insulation strength of electrical equipment will be reduced. The adsorption properties and sensing mechanisms of four SF₆ decomposed components (HF, SO₂, SOF₂ and SO₂F₂) upon an Au-modified InN (Au-InN) monolayer were studied in this work based on first-principles theory. Meanwhile, the adsorption energy (E_ad), charge transfer (Q_T), deformation charge density (DCD), density of states (DOS), frontier molecular orbital and recovery property were calculated. It can be observed that the structures of the SO₂, SOF₂ and SO₂F₂ molecules changed significantly after being adsorbed. Meanwhile, the E_ad and Q_T of these three adsorption systems are relatively large, while that of the HF adsorption system is the opposite. These phenomena indicate that Au-InN monolayer has strong adsorption capacity for SO₂, SOF₂ and SO₂F₂, and the adsorption can be identified as chemisorption. In addition, through the analysis of frontier molecular orbital, it is found that the conductivity of Au-InN changed significantly after adsorbing SO₂, SOF₂ and SO₂F₂. Combined with the analysis of the recovery properties, since the recovery time of SO₂ and SO₂F₂ removal from Au-InN monolayer is still very long at 418 K, Au-InN is more suitable as a scavenger for these two gases rather than as a gas sensor. Since the recovery time of the SOF₂ adsorption system is short at 418 K, and the conductivity of the system before and after adsorption changes significantly, Au-InN is an ideal SOF₂ gas-sensing material. These results show that Au-InN has broad application prospects as an SO₂, SOF₂ and SO₂F₂ scavenger and as a resistive SOF₂ sensor, which is of extraordinary meaning to ensure the safe operation of power systems. Our calculations can offer a theoretical basis for further exploration of gas adsorbent and resistive sensors prepared by Au-InN.

Robust Room-Temperature NO2 Sensors from Exfoliated 2D Few-Layered CVD-Grown Bulk Tungsten Di-selenide (2H-WSe2)

We report a facile and robust room-temperature NO2 sensor fabricated using bi- and multi-layered 2H variant of tungsten di-selenide (2H-WSe2) nanosheets, exhibiting high sensing characteristics. A simple liquid-assisted exfoliation of 2H-WSe2, prepared using ambient pressure chemical vapor deposition, allows smooth integration of these nanosheets on transducers. Three sensor batches are fabricated by modulating the total number of layers (L) obtained from the total number of droplets from a homogeneous 2H-WSe2 dispersion, such as ∼2L, ∼5-6L, and ∼13-17L, respectively. The gas-sensing attributes of 2H-WSe2 nanosheets are investigated thoroughly. Room temperature (RT) experiments show that these devices are specifically tailored for NO2 detection. 2L WSe2 nanosheets deliver the best rapid response compared to ∼5-6L or ∼13-17L. The response of 2L WSe2 at RT is 250, 328, and 361% to 2, 4, and 6 ppm NO2, respectively. The sensor showed nearly the same response toward low NO2 concentration even after 9 months of testing, confirming its remarkable long-term stability. A selectivity study, performed at three working temperatures (RT, 100, and 150 °C), shows high selectivity at 150 and 100 °C. Full selectivity toward NO2 at RT confirms that 2H-WSe2 nanosheet-based sensors are ideal candidates for NO2 gas detection.

Ultrahigh sensitivity with excellent recovery time for NH3 and NO2 in pristine and defect mediated Janus WSSe monolayers

We demonstrated ultrahigh sensitivity with excellent recovery time for H2S, NH3, NO2, and NO molecules on the sulfur and selenium surfaces of Janus WSSe monolayers using density functional theory. The selenium surface of the WSSe monolayer showed strong adsorption in comparison to the sulfur surface. The respective adsorption energies for H2S, NH3, NO2 and NO molecules are -0.193 eV, -0.220 eV, -0.276 eV, and -0.189 eV. These values are higher than the experimentally reported values for ultrahigh sensitivity gas sensors based on MoS2, MoSe2, WS2, and WSe2 monolayers. The computed adsorption energy and recovery time suggest that the desorption of gas molecules can be achieved easily in the WSSe monolayer. Further, the probable vacancy defects SV, SeV, and (S/Se)V and antisite defects SSe, and SeS are considered to understand their impact on the adsorption properties with respect to the pristine WSSe monolayer. We observed that the defect-including WSSe monolayers showed enhanced adsorption energy with fast recovery, which makes the Janus WSSe monolayer an excellent material for nanoscale gas sensors with ultrahigh sensitivity and excellent recovery time.

Transition Metal Dichalcogenides for the Application of Pollution Reduction: A Review

The material characteristics and properties of transition metal dichalcogenide (TMDCs) have gained research interest in various fields, such as electronics, catalytic, and energy storage. In particular, many researchers have been focusing on the applications of TMDCs in dealing with environmental pollution. TMDCs provide a unique opportunity to develop higher-value applications related to environmental matters. This work highlights the applications of TMDCs contributing to pollution reduction in (i) gas sensing technology, (ii) gas adsorption and removal, (iii) wastewater treatment, (iv) fuel cleaning, and (v) carbon dioxide valorization and conversion. Overall, the applications of TMDCs have successfully demonstrated the advantages of contributing to environmental conversation due to their special properties. The challenges and bottlenecks of implementing TMDCs in the actual industry are also highlighted. More efforts need to be devoted to overcoming the hurdles to maximize the potential of TMDCs implementation in the industry.

Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

Assessing atomic defect states and their ramifications on the electronic properties of two-dimensional van der Waals semiconducting transition metal dichalcogenides (SC-TMDs) is the primary task to expedite multi-disciplinary efforts in the promotion of next-generation electrical and optical device applications utilizing these low-dimensional materials. Here, with electron tunneling and optical spectroscopy measurements with density functional theory, we spectroscopically locate the mid-gap states from chalcogen-atom vacancies in four representative monolayer SC-TMDs-WS2, MoS2, WSe2, and MoSe2-, and carefully analyze the similarities and dissimilarities of the atomic defects in four distinctive materials regarding the physical origins of the missing chalcogen atoms and the implications to SC-mTMD properties. In addition, we address both quasiparticle and optical energy gaps of the SC-mTMD films and find out many-body interactions significantly enlarge the quasiparticle energy gaps and excitonic binding energies, when the semiconducting monolayers are encapsulated by non-interacting hexagonal boron nitride layers.

Repairing the N-vacancy in an InN monolayer using NO molecules: a first-principles study

The synthesis of a perfect InN monolayer is important to achieve desirable properties for the further investigation and application of InN monolayers. However, the inevitably existing defects, such as an N-vacancy, in the synthesized InN nanomaterials would significantly impair their geometric and electronic behaviors. In this study, we proposed to repair the N-vacancy in the InN monolayer using NO molecules through NO disproportionation, which was verified to be energetically favorable according to our first-principles calculations. The repaired InN monolayer was similar to the perfect counterpart in terms of the geometric and electronic aspects. In this study, a promising strategy is presented for repairing the N-vacancy in the InN monolayer to perfect its physicochemical properties effectively, which may also be used to repair N-vacancies in other materials.

Spatially Selective Enhancement of Photoluminescence in MoS2 by Exciton-Mediated Adsorption and Defect Passivation

Monolayers of transition-metal dichalcogenides (TMDs) are promising components for flexible optoelectronic devices because of their direct band gap and atomically thin nature. The photoluminescence (PL) from these materials is often strongly suppressed by nonradiative recombination mediated by midgap defect states. Here, we demonstrate up to a 200-fold increase in PL intensity from monolayer MoS₂ synthesized by chemical vapor deposition (CVD) by controlled exposure to laser light in the ambient. This spatially resolved passivation treatment is stable in air and vacuum. Regions unexposed to laser light remain dark in fluorescence despite continuous impingement of ambient gas molecules. A wavelength-dependent study confirms that PL brightening is concomitant with exciton generation in the MoS₂; laser light below the optical band gap fails to produce any enhancement in the PL. We highlight the photosensitive nature of the process by successfully brightening with a low-power broadband white light source. We decouple changes in absorption from defect passivation by examining the degree of circularly polarized PL. This measurement, which is independent of exciton generation, confirms that laser brightening reduces the rate of nonradiative recombination in the MoS₂. A series of gas exposure studies demonstrate a clear correlation between PL brightening and the presence of water. We propose that H₂O molecules passivate sulfur vacancies in the CVD-grown MoS₂ but require photogenerated excitons to overcome a large adsorption barrier. This work represents an important step in understanding the passivation of CVD-synthesized TMDs and demonstrates the interplay between adsorption and exciton generation.

Atmospheric and Long-term Aging Effects on the Electrical Properties of Variable Thickness WSe2 Transistors

Atmospheric and long-term aging effects on electrical properties of WSe₂ transistors with various thicknesses are examined. Although countless published studies report electrical properties of transition-metal dichalcogenide materials, many are not attentive to testing environment or to age of samples, which we have found significantly impacts results. Our as-fabricated exfoliated WSe₂ pristine devices are predominantly n-type, which is attributed to selenium vacancies. Transfer characteristics of as-fabricated devices measured in air then vacuum reveal physisorbed atmospheric molecules significantly reduced n-type conduction in air. First-principles calculations suggest this short-term reversible atmospheric effect can be attributed primarily to physisorbed H₂O on pristine WSe₂, which is easily removed from the pristine surface in vacuum due to the low adsorption energy. Devices aged in air for over 300 h demonstrate irreversibly increased p-type conduction and decreased n-type conduction. Additionally, they develop an extended time constant for recovery of the atmospheric adsorbents effect. Short-term atmospheric aging (up to approximately 900 h) is attributed to O₂ and H₂O molecules physisorbed to selenium vacancies where electron transfer from the bulk and adsorbed binding energies are higher than the H₂O-pristine WSe₂. The residual/permanent aging component is attributed to electron trapping molecular O₂ and isoelectronic O chemisorption at selenium vacancies, which also passivates the near-conduction band gap state, p-doping the material, with very high binding energy. All effects demonstrated have the expected thickness dependence, namely, thinner devices are more sensitive to atmospheric and long-term aging effects.

Repairing single and double atomic vacancies in a C3N monolayer with CO or NO molecules: a first-principles study

Even the simplest point defect in a two-dimensional (2D) material can have a significant influence on its electronic, magnetic, and chemical properties. Defect repairing in 2D materials has been a focus of concern in recent years. Based on first-principles calculations, the repair of C and N single vacancies with CO or NO molecules in a C3N monolayer has been studied. The repair process consists of two steps, i.e., filling of the vacancy with the first molecule and removal of the extra O atom by a second molecule. Overall, the repair processes of C and N single vacancies by CO or NO molecules are both thermodynamically and kinetically favorable, as evidenced by the significant energy released and the small energy barriers. In addition, the electronic and magnetic properties and the chemical activity of the C3N monolayer before and after the defect repair have been studied systematically. In addition to single vacancies, the repair of double vacancies with CO was also studied; this process is much less kinetically favorable than the case of single vacancies. This study provides useful insight into the effects of simple atomic vacancies on the physical and chemical properties of the C3N 2D semiconductor and also presents a promising strategy for repairing vacancies.