Efficient electro-optic modulation in low-loss graphene-plasmonic slot waveguides

Semi-embedded slot waveguide electro-optic modulator

Electro-optic modulators are essential devices on silicon photonic chips in modern optical communication networks. This paper presents a compact, low-loss electro-optic modulator. The modulation efficiency is greatly improved by embedding the lower half of the slot waveguide into the buried oxide layer and inserting graphene at the junction. The interaction of graphene with an optical field in a waveguide is studied using the finite element method. The functions of phase modulation and absorption modulation are realized by changing the gate voltage to change the chemical potential of graphene. The semi-embedded slot waveguide optical modulator has a length of 50 µm. After simulation verification, it can be used as an electro-absorption modulator and can achieve a modulation depth of 26.38 dB and an insertion loss of 0.60 dB. When used as an electro-refractive modulator, it can be realized with a linear change of phase from zero to π; the total insertion loss is only 0.59 dB. The modulator has a modulation bandwidth of 79.6 GHz, and the energy consumption as electro-absorption and electro-refraction modulation are 0.51 and 1.92 pj/bit, respectively. Compared with common electro-optic modulators, the electro-optic modulator designed in this paper has a higher modulation effect and also takes into account the advantages of low insertion loss and low energy consumption. This research is helpful for the design of higher-performance optical communication network devices.

Highly efficient graphene terahertz modulator with tunable electromagnetically induced transparency-like transmission

Graphene-based optical modulators have been extensively studied owing to the high mobility and tunable permittivity of graphene. However, weak graphene-light interactions make it difficult to achieve a high modulation depth with low energy consumption. Here, we propose a high-performance graphene-based optical modulator consisting of a photonic crystal structure and a waveguide with graphene that exhibits an electromagnetically-induced-transparency-like (EIT-like) transmission spectrum at terahertz frequency. The high quality-factor guiding mode to generate the EIT-like transmission enhances light-graphene interaction, and the designed modulator achieves a high modulation depth of 98% with a significantly small Fermi level shift of 0.05 eV. The proposed scheme can be utilized in active optical devices that require low power consumption.

Silicon-Based Graphene Electro-Optical Modulators

With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.

Analysis of hybrid plasmon-phonon-polariton modes in hBN/graphene/hBN stacks for mid-infrared waveguiding

Guiding mid-infrared (mid-IR) signals provide wide-ranging applications including chemical sensing, thermal imaging, and optical waveguiding. To manipulate mid-IR signals on photonic chips, it is critical to build a waveguide that provides both sub-diffraction field confinement and low loss. We present a mid-IR waveguide made up of a multilayer graphene/hexagonal boron nitride (hBN) stacking (MLGhS) and a high-refractive index nanowire. The guided mode of the proposed waveguide structure is formed by coupling the fundamental volume plasmon polariton with the fundamental hyperbolic phonon polariton in hBN, and is then modulated by a high-index nanowire. Interestingly, we found that the effective index, propagation length, and mode area of the guided mode vary as the dependences of N^-1, N, and N^3/2, where N is the number of graphene layers. In addition, an anomalous result, which reveals Lp and Am monotonously decrease as Fermi energy increases that is not observed in conventional graphene plasmon waveguides, occurs in the present structure. The modal properties are analyzed by altering geometry effects and material parameters, and by crossing the upper Reststrahlen band of hBN from the wavevector k = 1,300 to 1,500 cm^-1. Furthermore, crosstalk between adjacent waveguides are investigated to assess the degree of integration. The proposed idea not only provides a potential approach for designing tunable and large-area photonic integrated circuits, but it also has the potential to be extended to other 2D materials such as silicone, germanene, and stanene.

Ultra-Low-Loss Mid-Infrared Plasmonic Waveguides Based on Multilayer Graphene Metamaterials

Manipulating optical signals in the mid-infrared (mid-IR) range is a highly desired task for applications in chemical sensing, thermal imaging, and subwavelength optical waveguiding. To guide highly confined mid-IR light in photonic chips, graphene-based plasmonics capable of breaking the optical diffraction limit offer a promising solution. However, the propagation lengths of these materials are, to date, limited to approximately 10 µm at the working frequency f = 20 THz. In this study, we proposed a waveguide structure consisting of multilayer graphene metamaterials (MLGMTs). The MLGMTs support the fundamental volume plasmon polariton mode by coupling plasmon polaritons at individual graphene sheets over a silicon nano-rib structure. Benefiting from the high conductivity of the MLGMTs, the guided mode shows ultralow loss compared with that of conventional graphene-based plasmonic waveguides at comparable mode sizes. The proposed design demonstrated propagation lengths of approximately 20 µm (four times the current limitations) at an extremely tight mode area of 10⁻⁶A₀, where A₀ is the diffraction-limited mode area. The dependence of modal characteristics on geometry and material parameters are investigated in detail to identify optimal device performance. Moreover, fabrication imperfections are also addressed to evaluate the robustness of the proposed structure. Moreover, the crosstalk between two adjacent present waveguides is also investigated to demonstrate the high mode confinement to realize high-density on-chip devices. The present design offers a potential waveguiding approach for building tunable and large-area photonic integrated circuits.

2D Materials Enabled Next-Generation Integrated Optoelectronics: from Fabrication to Applications

2D materials, such as graphene, black phosphorous and transition metal dichalcogenides, have gained persistent attention in the past few years thanks to their unique properties for optoelectronics. More importantly, introducing 2D materials into silicon photonic devices will greatly promote the performance of optoelectronic devices, including improvement of response speed, reduction of energy consumption, and simplification of fabrication process. Moreover, 2D materials meet the requirements of complementary metal-oxide-semiconductor compatible silicon photonic manufacturing. A comprehensive overview and evaluation of state-of-the-art 2D photonic integrated devices for telecommunication applications is provided, including light sources, optical modulators, and photodetectors. Optimized by unique structures such as photonic crystal waveguide, slot waveguide, and microring resonator, these 2D material-based photonic devices can be further improved in light-matter interactions, providing a powerful design for silicon photonic integrated circuits.

A Broadband Polarization-Insensitive Graphene Modulator Based on Dual Built-in Orthogonal Slots Plasmonic Waveguide

A broadband polarization-insensitive graphene modulator has been proposed. The dual built-in orthogonal slots waveguide allows polarization independence for the transverse electric (TE) mode and the transverse magnetic (TM) mode. Due to the introduction of metal slots in both the vertical and horizontal directions, the optical field as well as the electro-absorption of graphene are enhanced by the plasmonic effect. The proposed electro-optic modulator shows a modulation depth of 0.474 and 0.462 dB/μm for two supported modes, respectively. An ultra-low effective index difference of 0.001 can be achieved within the wavelength range from 1100 to 1900 nm. The 3 dB-bandwidth is estimated to be 101 GHz. The power consumption is 271 fJ/bit at a modulation length of 20 μm. The proposed modulator provides high speed broadband solutions in microwave photonic systems.

Graphene based hyperbolic metamaterial for tunable mid-infrared biosensing

Plasmonic biosensors, operating in the mid-infrared (mid-IR) region, are well-suited for highly specific and label-free optical biosensing. The principle of operation is based on detecting the shift in resonance wavelength caused by the interaction of biomolecules with the surrounding medium. However, metallic plasmonic biosensors suffer from poor signal transduction and high optical losses in the mid-IR range, leading to low sensitivity. Here, we introduce a hyperbolic metamaterial (HMM) biosensor, that exploits the strong, tunable, mid-IR localization of graphene plasmons, for detecting nanometric biomolecules with high sensitivity. The HMM stack consists of alternating graphene/Al2O3 multilayers, on top of a gold grating structure with rounded corners, to produce plasmonic hotspots and enhance sensing performance. Sensitivity and figure-of-merit (FOM) can be systematically tuned, by varying the structural parameters of the HMM stack and the doping levels (Fermi energy) in graphene. Finite-difference time-domain (FDTD) analysis demonstrates that the proposed biosensor can achieve sensitivities as high as 4052 nm RIU-1 (refractive index unit) with a FOM of 11.44 RIU-1. We anticipate that the reported graphene/Al2O3 HMM device will find potential application as a mid-IR, highly sensitive plasmonic biosensor, for tunable and label-free detection.

Theoretical Analysis of Terahertz Dielectric-Loaded Graphene Waveguide

The waveguiding of terahertz surface plasmons by a GaAs strip-loaded graphene waveguide is investigated based on the effective-index method and the finite element method. Modal properties of the effective mode index, modal loss, and cut-off characteristics of higher order modes are investigated. By modulating the Fermi level, the modal properties of the fundamental mode could be adjusted. The accuracy of the effective-index method is verified by a comparison between the analytical results and numerical simulations. Besides the modal properties, the crosstalk between the adjacent waveguides, which determines the device integration density, is studied. The findings show that the effective-index method is highly valid for analyzing dielectric-loaded graphene plasmon waveguides in the terahertz region and may have potential applications in subwavelength tunable integrated photonic devices.

Plasmonic Bragg microcavity as an efficient electro-optic modulator

Plasmonic electro-optic modulators might play a pivotal role in the development of compact efficient communication devices. Here, we introduce a novel electro-optic modulator based on a plasmonic Bragg microcavity and a pockels active material. We investigate detailed design and optimization protocols of the proposed structure. With 2D scanning of geometrical parameters, an extinction ratio of 19.8 dB, insertion loss of 2.8 dB and modulation depth of 0.99 with a driving voltage of ±5 V are obtained.

Performance of integrated optical switches based on 2D materials and beyond

Applications of optical switches, such as signal routing and data-intensive computing, are critical in optical interconnects and optical computing. Integrated optical switches enabled by two-dimensional (2D) materials and beyond, such as graphene and black phosphorus, have demonstrated many advantages in terms of speed and energy consumption compared to their conventional silicon-based counterparts. Here we review the state-of-the-art of optical switches enabled by 2D materials and beyond and organize them into several tables. The performance tables and future projections show the frontiers of optical switches fabricated from 2D materials and beyond, providing researchers with an overview of this field and enabling them to identify existing challenges and predict promising research directions.

Plasmonic monolithic lithium niobate directional coupler switches

Lithium niobate (LN) has been the material of choice for electro-optic modulators owing to its excellent physical properties. While conventional LN electro-optic modulators continue to be the workhorse of the modern optoelectronics, they are becoming progressively too bulky, expensive, and power-hungry to fully serve the needs of this industry. Here, we demonstrate plasmonic electro-optic directional coupler switches consisting of two closely spaced nm-thin gold nanostripes on LN substrates that guide both coupled electromagnetic modes and electrical signals that control their coupling, thereby enabling ultra-compact switching and modulation functionalities. Extreme confinement and good spatial overlap of both slow-plasmon modes and electrostatic fields created by the nanostripes allow us to achieve a 90% modulation depth with 20-μm-long switches characterized by a broadband electro-optic modulation efficiency of 0.3 V cm. Our monolithic LN plasmonic platform enables a wide range of cost-effective optical communication applications that demand μm-scale footprints, ultrafast operation and high environmental stability.

Lithium niobate is essential for electro-optic modulation, however, combining it with the attractive features of plasmonics is largely unexplored. Here, the authors demonstrate ultra-compact electrooptic switching with low voltage-length product, fast nonlinear response and low capacitance.

Graphene-Coated Nanowire Waveguides and Their Applications

In recent years, graphene-coated nanowires (GCNWs) have attracted considerable research interest due to the unprecedented optical properties of graphene in terahertz (THz) and mid-infrared bands. Graphene plasmons in GCNWs have become an attractive platform for nanoscale applications in subwavelength waveguides, polarizers, modulators, nonlinear devices, etc. Here, we provide a comprehensive overview of the surface conductivity of graphene, GCNW-based plasmon waveguides, and applications of GCNWs in optical devices, nonlinear optics, and other intriguing fields. In terms of nonlinear optical properties, the focus is on saturable absorption. We also discuss some limitations of the GCNWs. It is believed that the research of GCNWs in the field of nanophotonics will continue to deepen, thus laying a solid foundation for its practical application.

The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector

We investigated the effect of silver catalysts to enhance the growth of Ga₂O₃ nanowires. The growth of Ga₂O₃ nanowires on a P⁺-Si (100) substrate was demonstrated by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of a thin silver film that serves as a catalyst layer. We present the results of morphological, compositional, and electrical characterization of the Ga₂O₃ nanowires, including the measurements on photoconductance and transient time. Our results show that highly oriented, dense and long Ga₂O₃ nanowires can be grown directly on the surface of silicon. The Ga₂O₃ nanowires, with their inherent n-type characteristics formed a pn heterojunction when grown on silicon. The heterojunction showed rectifying characteristics and excellent UV photoresponse.

Nanoscale plasmonic TM-pass polarizer integrated on silicon photonics

Transverse electric (TE)-pass polarizers integrated in silicon-on-insulator photonic circuits, based on hybrid plasmonic absorption, have been widely discussed as a key component for applications in information and communication technologies. Nevertheless, the complementary transverse magnetic (TM)-pass polarizer has not been developed due to the TM nature of plasmonic modes. Here, we experimentally demonstrate a nano-scale TM-pass polarizer based on TE-polarized plasmonic absorption using a periodic metal nanoparticle chain integrated on a silicon waveguide. Currently, the measured extinction ratio is 23 dB μm^-1 and the insertion loss is 2.4 dB μm^-1 at the central wavelength of 1.59 μm, in a device with a footprint of 630 nm (0.4λ). This polarization-selective absorption is analyzed using dispersion curves and transmission near-field scanning optical microscopy. The nanophotonic device completes an integrated polarizer based on plasmonic absorption and provides the necessary footprint for high density integration in photonic integrated circuits.

Surface plasmon-polaritons in graphene, embedded into medium with gain and losses

The paper deals with the theoretical consideration of surface plasmon-polaritons in the graphene monolayer, embedded into dielectric with spatially separated gain and losses. It is demonstrated, that presence of gain and losses in the system leads to the formation of additional mode of graphene surface plasmon-polaritons, which does not have its counterpart in the conservative system. When the gain and losses are mutually balanced, the position of exceptional point-transition point between unbroken and broken [Formula: see text]-symmetry-can be effectively tuned by graphene's doping. In the case of unbalanced gain and losses the spectrum of surface plasmon-polaritons contains spectral singularity, whose frequency is also adjustable through the electrostatic gating of graphene.

High-Performance Transmission of Surface Plasmons in Graphene-Covered Nanowire Pairs with Substrate

Graphene was recently proposed as a promising alternative to support surface plasmons with superior performances in the mid-infrared range. Here, we theoretically show that high-performance and low-loss transmission of graphene plasmons can be achieved by adding a silica substrate to the graphene-covered nanowire pairs. The effect of the substrate layer on mode properties has been intensively investigated by using the finite element method. Furthermore, the results show that inserting a low index material layer between the nanowire and substrate could compensate for the loss accompanied by the substrate, thus the mode properties could be adjusted to fulfill better performance. A reasonable propagation length of 15 μm and an ultra-small normalized mode area about ~10⁻⁴ could be obtained at 30 THz. The introduction of the substrate layer is crucial for practical fabrication, which provides additional freedom to tune the mode properties. The graphene-covered nanowire pairs with an extra substrate may inspire potential applications in tunable integrated nanophotonic devices.

In-plane electric field confinement engineering in graphene-based hybrid plasmonic waveguides

Surface plasmon polaritons (SPPs) are surface modes confined to metal-dielectric interfaces. This confinement enhances the electromagnetic field and therefore, SPPs are sensitive to surface conditions. The properties of two dimensional materials such as graphene thus can be enhanced and used to engineer nanoscale components for optical communications. However, SPPs are transverse magnetic modes with electric fields out-of-plane that limit flexibility. In this contribution, we numerically analyze the confinement and in-plane enhancement in graphene-based hybrid plasmonic waveguides. We find that plasmonic modes supported by metal nanoparticle chain waveguides provide higher in-plane enhancement compared to those supported by nano-strip and slot hybrid plasmonic waveguides. Our results contribute to the performance improvement of graphene light absorption devices, including electro-optic modulators and photodetectors.

Electron-plasmon interaction on lithium niobate with gold nanolayer and its field distribution dependent modulation

Surface plasmon resonance (SPR) enables strong field confinement, opening thereby new avenues for device miniaturization and reducing energy consumption. Plasmonic devices with electrical tunability attract tremendous interest for various applications. Most of the current researches achieved SPR modulation with relatively large driving voltages, or by other relatively low-speed tuning approaches, such as thermo-optic, magneto-optic, acousto-optic etc. In this paper, we propose and demonstrate an efficiently electrical SPR modulation based on lithium niobate (LN) with gold nanolayer (~81 nm) via electron-plasmon interaction. Efficient intensity modulation and wavelength shift (in visible band) of ~5.7 dB/V and ~36.3 nm/V are respectively obtained with low DC current. More importantly, modulation phenomenon of field distribution dependent is also observed and experimentally unveiled. Further performance is analyzed in terms of AC modulation and polarization characteristics. This key achievement opens up opportunities for applications such as optical interconnection, electric field sensing, electrically plasmonic modulation, etc.

Graphene-Coated Elliptical Nanowires for Low Loss Subwavelength Terahertz Transmission

Graphene has been recently proposed as a promising alternative to support surface plasmons with its superior performances in terahertz and mid-infrared range. Here, we propose a graphene-coated elliptical nanowire (GCENW) structure for subwavelength terahertz waveguiding. The mode properties and their dependence on frequency, nanowire size, permittivity and chemical potential of graphene are studied in detail by using a finite element method, they are also compared with the graphene-coated circular nanowires (GCCNWs). Results showed that the ratio of the long and short axes (b/a) of the elliptical nanowire had significant influence on mode properties, they also showed that a propagation length over 200 μm and a normalized mode area of approximately 10−4~10−3 could be obtained. Increasing b/a could simultaneously achieve both long propagation length and very small full width at half maximum (FWHM) of the focal spots. When b/a = 10, a pair of focal spots about 40 nm could be obtained. Results also showed that the GCENW had a better waveguiding performance when compared with the corresponding GCCNWs. The manipulation of Terahertz (THz) waves at a subwavelength scale using graphene plasmon (GP) may lead to applications in tunable THz components, imaging, and nanophotonics.

Graphene-coated nanowire dimers for deep subwavelength waveguiding in mid-infrared range

In this paper, we show that the graphene-coated nanowire dimers could enable outstanding waveguiding performance in the mid-infrared range. The propagating properties of the fundamental graphene plasmon mode and their dependence on the nanowire radius, gap distance, nanowire permittivity and chemical potential of graphene are revealed in detail and compared with the graphene-coated circular nanowire. By improving the geometric parameters and the surface conductivity of graphene, the propagation length could reach about 9 μm, which is larger than that of the graphene-coated circular nanowire plasmon mode. Meanwhile, the effective mode area is only 10^-4A₀, which is one order of magnitude smaller than that of the graphene-coated circular nanowire plasmon mode. Theoretically, the propagation length could be further enhanced by increasing the chemical potential. Besides, the proposed graphene-coated nanowire dimers show quite good fabrication tolerance. The manipulation of mid-infrared waves at the deep subwavelength scale using graphene plasmons may offer potential applications in tunable integrated nanophotonic devices and infrared sensing.

Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth

Polarization-insensitive modulation, i.e., overcoming the limit of conventional modulators operating under only a single-polarization state, is desirable for high-capacity on-chip optical interconnects. Here, we propose a hybrid graphene-silicon-based polarization-insensitive electro-absorption modulator (EAM) with high-modulation efficiency and ultra-broad bandwidth. The hybrid graphene-silicon waveguide is formed by leveraging multi-deposited and multi-transferred methods to enable light interaction with graphene layers in its intense field distribution region instead of the commonly used weak cladding region, thus resulting in enhanced light–graphene interaction. By optimizing the dimensions of all hybrid graphene-silicon waveguide layers, polarization-insensitive modulation is achieved with a modulation efficiency (ME) of ~1.11 dB/µm for both polarizations (ME discrepancy < 0.006 dB/µm), which outperforms that of previous reports. Based on this excellent modulation performance, we designed a hybrid graphene-silicon-based EAM with a length of only 20 µm. The modulation depth (MD) and insertion loss obtained were higher than 22 dB and lower than 0.23 dB at 1.55 µm, respectively, for both polarizations. Meanwhile, its allowable bandwidth can exceed 300 nm by keeping MD more than 20 dB and MD discrepancy less than 2 dB, simultaneously, and its electrical properties were also analyzed. Therefore, the proposed device can be applied in on-chip optical interconnects.

Ultra-compact branchless plasmonic interferometers

Miniaturization of functional optical devices and circuits is a key prerequisite for a myriad of applications ranging from biosensing to quantum information processing. This development has considerably been spurred by rapid developments within plasmonics exploiting its unprecedented ability to squeeze light into subwavelength scale. In this study, we investigate on-chip plasmonic systems allowing for synchronous excitation of multiple inputs and examine the interference between two adjacent excited channels. We present a branchless interferometer consisting of two parallel plasmonic waveguides that can be either selectively or coherently excited via ultra-compact antenna couplers. The total coupling efficiency is quantitatively characterized in a systematic manner and shown to exceed 15% for small waveguide separations, with the power distribution between the two waveguides being efficiently and dynamically shaped by adjusting the incident beam position. The presented design principle can readily be extended to other configurations, giving new perspectives for highly dense integrated plasmonic circuitry, optoelectronic devices, and sensing applications.

Design of a graphene-based dual-slot hybrid plasmonic electro-absorption modulator with high-modulation efficiency and broad optical bandwidth for on-chip communication

The hybrid plasmonic effect with lower loss and comparable light confinement than surface plasmon polariton opens new avenues for strengthening light-matter interactions with low loss. Here, we propose and numerically analyze a graphene-based electro-absorption modulator (EAM) with high-modulation efficiency and broad optical bandwidth using a dual-slot hybrid plasmonic waveguide (HPW), which consists of a central dual-slot HPW connected with two taper transitions and two additional dual-slot HPWs for coupling it with the input and output silicon nanowires, where graphene layers are located at the bottom and top side of the whole dual-slot HPW region. By combining the huge light enhancement effect of the dual-slot HPW and graphene's tunable conductivity, we obtain a high-modulation efficiency (ME) of 1.76 dB/μm for the graphene-based dual-slot HPW (higher ME of 2.19 dB/μm can also be obtained). Based upon this promising result, we further design a graphene-based hybrid plasmonic EAM, achieving a modulation depth (MD) of 15.95 dB and insertion loss of 1.89 dB @1.55 μm, respectively, in a total length of only 10 μm, where its bandwidth can reach over 500 nm for keeping MD>15  dB; MD can also be improved by slightly increasing the device length or shrinking the waveguide thickness, showing strong advantages for applying it into on-chip high-performance silicon modulators.