Copper(i) sulfide: a two-dimensional semiconductor with superior oxidation resistance and high carrier mobility

Simple Fabrication and Unique Fiber Growth Mechanism of Copper(I) 4-Toluenethiolate-Based Fibrous Coordination Polymer

Coordination polymers (CPs) exhibit various distinctive properties owing to the metals incorporated in their main chains. These properties make CPs appealing for applications in optoelectronic devices and sensors and as precursors for inorganic materials with controlled morphologies. However, only a few CPs form fibrous structures, and the fabrication methods require complicated procedures, thus, limiting their range of applications. In this study, we report the easily feasible fabrication of fibrous CP, specifically, copper(I) 4-toluenethiolate (CuSArMe), and investigate its unique fiber growth mechanism. The reaction of CuI and 4-toluenethiol in acetonitrile in the presence of triethylamine quickly produced aggregated CuSArMe particles. With continuous stirring at ambient temperature (∼20 °C), wavy fibers grew from the surface of the aggregates, eventually forming an entangled fibrous structure. Structural evaluations of CuSArMe using powder X-ray diffraction analyses revealed that the regularity of the crystal phase increased as the morphology changed from aggregated particles to fibrous structures, suggesting that the transformation was a crystallization-driven process. Additionally, the conversion of fibrous CuSArMe to Cu2S, a known semiconductor, was demonstrated while maintaining the fiber-like structure and providing the desired materials.

Sulfide-Induced Dimerization Versus Demetallation of Tricopper(I) Clusters Protected by Tris-Thiolato Metalloligands

Here, we report the reactivity of copper(I) clusters toward sulfide ions; these sulfide copper(I) clusters have attracted much attention due to their relevance to biologically active centers and their fascinating structural and photophysical properties. Treatment of the CuI 3RhIII 2 pentanuclear complex, [Cu3{Rh(aet)3}2]3+ (aet=2-aminoethanethiolate), in which a {CuI 3}3+ cluster moiety is bound by two fac-[Rh(aet)3] metalloligands, with NaSH in water produced the CuI 6RhIII 4 decanuclear complex, [Cu6S{Rh(aet)3}4]4+, accompanied by the dimerization of [Cu3{Rh(aet)3}2]3+ and the incorporation of a sulfide ion at the center. While similar treatment using the analogous CuI 3IrIII 2 complex with fac-[Ir(aet)3] metalloligands, [Cu3{Ir(aet)3}2]3+, produced the isostructural CuI 6IrIII 4 decanuclear complex, [Cu6S{Ir(aet)3}4]4+, the use of the CuI 3RhIII 2 complex with fac-[Rh(apt)3] metalloligands, [Cu3{Rh(apt)3}2]3+ (apt=3-aminopropanethiolate), resulted in the removal of one of the three CuI atoms from {CuI 3}3+ to afford the CuI 2RhIII 2 tetranuclear complex, [Cu2{Rh(apt)3}2]2+.

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs

In this study, we have investigated the electron mobility of monolayered (ML) tetrahex-GeC2 by solving the linearized Boltzmann transport equation (BTE) with the normalized full-band relaxation time approximation (RTA) using density functional theory (DFT). Contrary to what the deformation potential theory (DPT) suggested, the ZA acoustic mode was determined to be the most restrictive for electron mobility, not the LA mode. The electron mobility at 300 K is 803 cm2 (V s)-1, exceeding the 400 cm2 (V s)-1 of MoS2 which was calculated using the same method and measured experimentally. The ab initio quantum transport simulations were performed to assess the performance limits of sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs, including gate lengths (Lg) of 3 nm, 5 nm, 7 nm, and 9 nm, with the underlap (UL) effect considered for the first two. For both high-performance (HP) and low-power (LP) applications, their on-state currents (Ion) can meet the requirements of similar nodes in the ITRS 2013. In particular, the Ion is more remarkable for HP applications than that of the extensively studied MoS2. For LP applications, the Ion values at Lg of 7 and 9 nm surpass those of arsenene, known for having the largest Ion among 2D semiconductors. Subthreshold swings (SSs) as low as 69/53 mV dec-1 at an Lg of 9 nm were observed for HP/LP applications, and 73 mV dec-1 at an Lg of 5 nm for LP applications, indicating the excellent gate control capability. Moreover, the delay time τ and power dissipation (PDP) at Lg values of 3 nm, 5 nm, 7 nm, and 9 nm are all below the upper limits of the ITRS 2013 HP/LP proximity nodes and are comparable to or lower than those of typical 2D semiconductors. The sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs can be down-scaled to 9 nm and 5 nm for HP and LP applications, respectively, displaying desirable Ion, delay time τ, and PDP in the ballistic limit, making them a potential choice for sub-10 nm transistors.

Electronic band structure change with structural transition of buckled Au2X monolayers induced by strain

This study investigates the strain-induced structural transitions of η ↔ θ and the changes in electronic band structures of Au2X (X = S, Se, Te, Si, Ge) and Au4SSe. We focus on Au2S monolayers, which can form multiple meta-stable monolayers theoretically, including η-Au2S, a buckled penta-monolayer composed of a square Au lattice and S adatoms. The θ-Au2S is regarded as a distorted structure of η-Au2S. Based on density functional theory (DFT) calculations using a generalized gradient approximation, the conduction and the valence bands of θ-Au2S intersect at the Γ point, leading to linear dispersion, whereas η-Au2S has a band gap of 1.02 eV. The conduction band minimum depends on the specific Au-Au bond distance, while the valence band maximum depends on both Au-S and Au-Au interactions. The band gap undergoes significant changes during the η ↔ θ phase transition of Au2S induced by applying tensile or compressive in-plane biaxial strain to the lattice. Moreover, substituting S atoms with other elements alters the electronic band structures, resulting in a variety of physical properties without disrupting the fundamental Au lattice network. Therefore, the family of Au2X monolayers holds potential as materials for atomic scale network devices.

Prediction of 2D group-11 chalcogenides: insights into novel auxetic M2X (M = Cu, Ag, Au; X = S, Se, Te) monolayers

Two-dimensional (2D) auxetic materials have recently attracted considerable research interest due to their excellent mechanical properties and diverse applications, surpassing those of three-dimensional (3D) materials. This study focuses on the theoretical prediction of mechanical properties and auxeticity in 2D M2X (M = Cu, Ag, Au; X = S, Se, Te) monolayers using first-principles calculations. Our results indicate that the dynamically stable monolayers include low-energy α-Cu2S, α-Cu2Se, α-Cu2Te, β-Ag2S, β-Ag2Se, α-Ag2Te, β-Au2S, β-Au2Se and α-Au2Te. These M2X monolayers possess positive Poisson's ratios (PR) ranging from 0.09 to 0.52, as well as Young's moduli ranging from 19.92 to 35.42 N m-1 in x and y directions. Specially, α-Cu2S exhibits the lowest negative PR in θ = 45° × n (n = 1, 2, 3, 4) directions. The Poisson's function (PF) can be adjusted by increasing tensile strains. The β-phase monolayers exhibit positive PF with a linear change. Interestingly, the transition from positive to negative PF occurs in the α-Cu2S and α-Ag2Te monolayers at strains greater than +3% and +4%, respectively, while the α-Cu2Se, α-Cu2Te and α-Au2Te monolayers maintain positive PF within the range of 0% to +6% strains. Furthermore, taking α-Cu2S (α-Cu2Te) as an example, the mechanism underlying negative (positive) PF is demonstrated to involve increased (decreased) bond angles, decreased thickness, and weakened (enhanced) d(M)-p(X) orbital coupling. The findings of this study not only enrich the family of 2D group-11 chalcogenides but also provide insights into their mechanical properties, thereby expanding their potential applications in mechanics.

Tunable Intrinsic Phonon Mode versus Anomalous Thermal Transport in Two-Dimensional Strongly Anharmonic Group IB Chalcogenides A2IBSe1/2Te1/2 (AIB = Cu, Ag, or Au)

Group IB chalcogenides, as promising thermoelectric materials, have ultralow thermal transport. Here, we propose a peculiar intrinsic B2 phonon mode that includes the in-plane rotational and stretching vibrations of metal atoms in two-dimensional A2IBSe1/2Te1/2 (AIB = Cu, Ag, or Au). The B2 mode is sensitive to the metal-atom mass, temperature, and strain for effectively tuning the lattice thermal conductivity. The in-plane stretching vibration leads to an unexpected increase in the lattice thermal conductivity from Cu to Ag and to Au systems, in contrast to Keyes' theory. The s(I) phase can be stabilized by the temperature-hardened B2 mode to reduce the lattice thermal conductivity, following the ∼T-0.59 instead of the traditional ∼T-1 trend. The s(II)-to-s(I) phase transition is driven by the strain-softened B2 mode to greatly enhance thermal transport via weakening the anharmonicity. Our work establishes the relationship of tunable intrinsic phonon mode versus thermal transport in two-dimensional group IB chalcogenides.

The Effect of Deposition Parameters on Morphological and Optical Properties of Cu2S Thin Films Grown by Chemical Bath Deposition Technique

The chemical bath deposition technique has been used for the deposition of Cu2S thin films on glass substrates. The thickness of deposited thin films strongly depends on the deposition parameters. The present study revealed that the thickness increased from 185 to 281 nm as deposition time increased and from 183 to 291 nm as bath temperature increased. In addition, the thickness increased from 257 to 303 nm with the increment of precursors concentration and from 185 to 297 nm as the pH value increased. However, the thickness decreased from 299 to 234 nm with the increment of precursors concentration. The morphology of Cu2S thin films remarkably changed as the deposition parameters varied. The increase in deposition time, bath temperature, and CuSO4.5H2O concentration leads to the increase in particle sizes, homogeneity, compactness of the thin films, and the number of clusters, and agglomeration, while the increase in thiourea concentration leads to the decrease in particle sizes and quality of films. Optical results demonstrated that the transmission of thin films rapidly increased in the UV–VIS region at (λ = 350–500 nm) until it reached its maximum peak at (λ = 600–650 nm) in the visible region, then it decreased in the NIR region. The high absorption was obtained in the UV–VIS region at (λ = 350–500 nm) before it decreased to its minimum value in the visible region, and then increased in the NIR region. The energy bandgap of thin films effectively depends on the deposition parameters. It decreased with the increasing deposition time (3.01–2.95 eV), bath temperature (3.04–2.63 eV), CuSO4.5H2O concentration (3.1–2.6 eV), and pH value (3.14–2.75 eV), except for thiourea concentration, while it decreased with the increasing thiourea concentration (2.79–3.09 eV).

A B2N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility

Two-dimensional materials with a planar lattice, suitable direct band gap, and high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically stable B-rich 2D B-N compounds with the stoichiometries of B₂N, B₃N, and B₄N using a combination of crystal structure searches and first-principles calculations. Among them, B₂N has an ultraflat surface and consists of eight-membered B₆N₂ and pentagonal B₃N₂ rings. The eight-membered B₆N₂ rings are linked to each other through both edge-sharing (in the y direction) and bridging B₃N₂ pentagons (in the x direction). B₂N is a semiconductor with a direct band gap of 1.96 eV, and the nature of the direct band gap is well preserved in bilayer B₂N. The hole mobility of B₂N is as high as 0.6 × 10³ cm² V^-1 s^-1 along the y direction, 7.5 times that in the x direction. These combined novel properties render the B₂N monolayer as a natural example in the field of two-dimensional functional materials with broad application potential for use in field-effect transistors.

Selective visible-light driven highly efficient photocatalytic reduction of CO2 to C2H5OH by two-dimensional Cu2S monolayers

Solar-driven highly-efficient photocatalytic reduction of CO2 into value-added fuels has been regarded as a promising strategy to assuage the current global warming and energy crisis, but developing highly product-selective, long-term stable and low-cost photocatalysts for C2 production remains a grand challenge. Herein, we demonstrate that two-dimensional β- and δ-phase Cu2S monolayers are promising photocatalysts for the reduction of CO2 into C2H5OH. The calculated potential-limiting steps for the CO2 reduction reaction (CO2RR) are less than 0.50 eV, while those for the hydrogen evolution reaction are as high as 1.53 and 0.87 eV. Most strikingly, the C-C coupling only needs to overcome an ultra-low kinetic barrier of ∼0.30 eV, half of that on the Cu surface, indicating that they can boost the C2H5OH conversion efficiency greatly. Besides, these catalysts also exhibit satisfactory band edge positions and suitable visible light absorption, rendering them ideal for the visible light driven CO2RR. Our work not only provides a promising photocatalyst for achieving the efficient and selective CO2RR, but also brings new opportunities for advanced sustainable C2H5OH product.

Two-dimensional Ga2O2 monolayer with tunable band gap and high hole mobility

By means of density functional theory and unbiased structure search computations, we systematically investigated the stability and electronic properties of a new Ga2O2 monolayer. The phonon spectra and ab initio molecular dynamics simulations show that the Ga2O2 monolayer is dynamically and thermally stable. Moreover, it also shows superior open-air stability. In particular, the Ga2O2 monolayer is an indirect semiconductor with a wide band gap of 2.752 eV and high hole mobility of 4720 cm2 V-1 s-1. Its band gap can be tuned flexibly in a large range by applied strain and layer control. It exhibits high absorption coefficients (>105 cm-1) in the ultraviolet region. The combined novel electronic properties of the Ga2O2 monolayer imply that it is a highly promising material for future applications in electronics and optoelectronics.

Two-Dimensional Square-A2B (A = Cu, Ag, Au, and B = S, Se): Auxetic Semiconductors with High Carrier Mobilities and Unusually Low Lattice Thermal Conductivities

Using evolutionary structure search combined with ab initio theory, we investigate the electronic, thermal, and mechanical properties of two-dimensional (2D) A₂B (A = Cu, Ag, Au, and B = S, Se) auxetic semiconductors. Two types of structures are found to have low energy, namely, s(I/II)-A₂B, which have direct bandgaps in the range 1.09-2.60 eV and high electron mobilities. Among these semiconductors, Cu₂B and Ag₂B have light holes with 2 orders of magnitude larger mobility than the heavy holes, up to 9.51 × 10⁴ cm² V^-1 s^-1, giving the possibility of achieving highly anisotropic hole transport with the application of a uniaxial strain. Due to the ionic bonding nature, s-A₂B structures have unusually low lattice thermal conductivities down to 1.5 W m^-1 K^-1 at 300 K, which are quite promising for new generation thermoelectric devices. Besides, s-A₂B structures show extraordinary flexibility with ultralow Young's moduli (down to 20 N/m), which are lower than most previously reported 2D materials. Moreover, under strain along the diagonal direction, five of the structures have in-plane negative Poisson's ratios.

Two-Dimensional Gold Sulfide Monolayers with Direct Band Gap and Ultrahigh Electron Mobility

It remains a pressing task to search for new two-dimensional (2D) semiconducting materials for future-generation electronic applications. By using density functional theory computations and global structure prediction methods, we demonstrate two new gold sulfide monolayers (2D Au₂S and AuS), both exhibiting excellent electronic properties and high stabilities. All the gold sulfide monolayers are semiconductors with band gaps in the range 1.0-3.6 eV. In particular, the α-Au₂S monolayer is predicted to possess a direct band gap of 1.0 eV and extremely high electron and hole mobilities of 8.45 × 10⁴ and 0.40 × 10⁴ cm² V^-1 S^-1, respectively. The phonon dispersion calculations and ab initio molecular dynamics simulations indicate that the gold sulfide monolayers exhibit robust dynamical and thermal stabilities. Moreover, the α-Au₂S monolayer appears to show strong oxidation resistibility. The novel electronic properties, coupled with structural and chemical stabilities, endow the new gold sulfide monolayers to be highly promising for future applications in nanoelectronics.

Ultralow lattice thermal conductivity induced high thermoelectric performance in the δ-Cu2S monolayer

Motivated by the recent experimental exfoliation of β-Cu2S thin films and the theoretical finding of a new phase labeled the δ-Cu2S monolayer, we carried out extensive studies on thermal conductivity and thermoelectric properties of the new phase using first principles combined with Boltzmann transport theory, focusing on the analysis of group velocities, Gruneisen parameters, three-phonon scattering rates, and the scattering phase space. Our results show that the δ-Cu2S monolayer exhibits an intrinsically ultralow lattice thermal conductivity of 0.10 W m-1 K-1 at 800 K. Such an ultralow lattice thermal conductivity leads to a high thermoelectric figure of merit ZT = 1.33 at 800 K in an optimum p-type doping concentration, which is not only larger than the value of 1.23 in In2S3 doped Cu2S at 850 K but also comparable with the value of 1.7 in Cu1.97S at 1000 K, exhibiting good potential in thermoelectric applications.

P3Cl2: A Unique Post-Phosphorene 2D Material with Superior Properties against Oxidation

Herein, a unique class of post-phosphorene materials, namely, phosphorene halogenides (e.g., α-P₃Cl₂) with superior oxidation resistance and desirable bandgap characteristics, are proposed. Our first-principles computations show that monolayer α-P₃Cl₂ is a direct semiconductor with a wide bandgap of 2.41 eV (HSE06) or 4.02 eV (G₀W₀), while the bandgap exhibits only slight reduction with increasing number of layers. The monolayer α-P₃Cl₂ also possesses highly anisotropic carrier mobility, with both ultrahigh electron mobility (56 890 cm² V^-1 s^-1) and hole mobility (26 450 cm² V^-1 s^-1). Meanwhile, the outstanding optical properties and favorable band alignment of 2D P₃Cl₂ suggest its potential as a photocatalyst for visible-light water splitting. 2D α-P₃X₂ (X = F, Br, I) also exhibit good oxidation resistance and possess wide direct bandgaps ranging from 2.16 to 2.43 eV (HSE06). These unique electronic and optical properties render 2D phosphorene halogenide as promising functional materials for broad applications in electronic and optoelectronic devices.