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Kistanov AA. Atomic insights into the interaction of N 2, CO 2, NH 3, NO, and NO 2 gas molecules with Zn 2(V, Nb, Ta)N 3 ternary nitride monolayers. Phys Chem Chem Phys 2024; 26:13719-13730. [PMID: 38669029 DOI: 10.1039/d4cp01225a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/09/2024]
Abstract
The search for promising carrier blocking layer materials with high stability, including resistance to surface inhibition by environmental molecules that cause a drop in carrier mobility, is critical for the production of tandem solar cells. Based on density functional theory calculations, the reaction of atmospheric gases, including N2, CO2, NH3, NO, and NO2, with three promising Zn2(V, Nb, Ta)N3 monolayers is discovered. The results suggest the chemical adsorption of NH3 and physical adsorption of NO and NO2. In addition, the Zn2(V, Nb, Ta)N3 monolayers are characterized by a weak bonding with N2 and CO2. Charge redistribution is found at the interface between the monolayers and NH3, NO and NO2 molecules, leading to the formation of a local surface dipole that affects the functionality of the Zn2(V, Nb, Ta)N3 monolayers. The Zn2VN3 monolayer is less reactive with atmospheric gases and thus is the most promising for application in tandem solar cells. Notably, the revealed nontrivial behavior of the Zn2(V, Nb, Ta)N3 monolayers towards N-containing gases makes them promising for application in gas sensing. Specifically, the Zn2TaN3 monolayer is the most promising for application in molecular sensing due to its high reversibility and distinguished interaction with NH3, NO, and NO2 gases.
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Affiliation(s)
- Andrey A Kistanov
- The Laboratory of Metals and Alloys Under Extreme Impacts, Ufa University of Science and Technology, Ufa 450076, Russia.
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2
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Zhang Y, Gan S, Li J, Tian Y, Chen X, Su G, Hu Y, Wang N. Effect of atomic substitution and structure on thermal conductivity in monolayers H-MN and T-MN (M = B, Al, Ga). Phys Chem Chem Phys 2024; 26:6256-6264. [PMID: 38305726 DOI: 10.1039/d3cp05731c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Finding materials with suitable thermal conductivity (κ) is crucial for improving energy efficiency, reducing carbon emissions, and achieving sustainability. Atomic substitution and structural adjustments are commonly used methods. By comparing the κ of two different structures of two-dimensional (2D) IIIA-nitrides and their corresponding carbides, we explored whether atomic substitution has the same impact on κ in different structures. All eight materials exhibit normal temperature dependence, with κ decreasing as the temperature rises. Both structures are single atomic layers of 2D materials, forming M-N bonds, with the difference being that H-MN consists of hexagonal rings, while T-MN consists of tetragonal and octagonal rings. 2D IIIA-nitrides provide a good illustration of the impact of atomic substitution and structure on κ. On a logarithmic scale of κ, it approximates two parallel lines, indicating that different structures exhibit similar trends of κ reduction under the same conditions of atomic substitution. We analyzed the mechanisms behind the decreasing trend in κ from a phonon mode perspective. The main reason for the decrease in κ is that heavier atoms lower lattice vibrations, reducing phonon frequencies. Electronegativity increases, altering bonding characteristics and increasing anharmonicity. Reduced symmetry in complex structures decreases phonon group velocities and enhances phonon anharmonicity, leading to decreased phonon lifetimes. It's noteworthy that we found that atomic substitution and structure significantly affect hydrodynamic phonon transport as well. Both complex structures and atomic substitution simultaneously reduce the effects of hydrodynamic phonon transport. By comparing the impact of κ on two different structures of 2D IIIA-nitrides and their corresponding carbides, we have deepened our understanding of phonon transport in 2D materials. Heavier atomic substitution and more complex structures result in reduced κ and decreased hydrodynamic phonon transport effects. This research is likely to have a significant impact on the study of micro- and nanoscale heat transfer, including the design of materials with specific heat transfer properties for future applications.
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Affiliation(s)
- Yulin Zhang
- School of New Energy Materials and Chemistry, Leshan Normal University, Leshan, Sichuan 614000, China.
| | - Siyu Gan
- School of Science, Key Laboratory of High-Performance Scientific Computation, Xihua University, Chengdu, 610039, China.
| | - Jialu Li
- School of Science, Key Laboratory of High-Performance Scientific Computation, Xihua University, Chengdu, 610039, China.
| | - Yi Tian
- School of New Energy Materials and Chemistry, Leshan Normal University, Leshan, Sichuan 614000, China.
| | - Xihao Chen
- School of Materials Science and Engineering, Chongqing University of Arts and Sciences, Chongqing, 402160, China
| | - Gehong Su
- College of Science, Sichuan Agricultural University, Xin Kang Road, Yucheng District, Ya'an 625014, China.
| | - Yu Hu
- School of New Energy Materials and Chemistry, Leshan Normal University, Leshan, Sichuan 614000, China.
- Leshan West Silicon Materials Photovoltaic and New Energy Industry Technology Research Institute, Leshan, Sichuan 614000, China
| | - Ning Wang
- School of Science, Key Laboratory of High-Performance Scientific Computation, Xihua University, Chengdu, 610039, China.
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Muralidharan A, Subramani M, Subramani D, Ramasamy S. Inquest for the interaction of canonical and non-canonical DNA/RNA bases with ternary based 2D Si 2BN and doped Si 2BN for biosensing applications. J Biomol Struct Dyn 2023:1-32. [PMID: 37855316 DOI: 10.1080/07391102.2023.2270685] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 10/08/2023] [Indexed: 10/20/2023]
Abstract
Density functional theory (DFT) is invoked to investigate the interaction between the canonical (CN) and non-canonical (NC) bases with pristine Si2BN (Si2BN) and Phosphorous-doped Si2BN (P-dop-Si2BN) sheets. Inquest for the better sensing substrate is decided through the adsorption energy calculation which reveals that doping of phosphorous atom enhances the adsorption strength of AT (-83.74 kcal/mol) AU (-82.77 kcal/mol) and GC (-96.36 kcal/mol) base pairs. The CN and NC bases have higher adsorption energy than the previous reported values which concludes that the P-dop-Si2BN sheet will be optimal substrate to sense the bases. Meanwhile, the selected CN and NC (except hypoxanthine) bases interact with sheet in parallel manner which infers the π-π interaction with Si2BN and P-dop-Si2BN sheets. The energy gap variation (ΔEg%) of the P-dop-Si2BN complexes has a noticeable change, ranging from -24.75 to -197.28% which thrust the sensitivity of the P-dop-Si2BN sheet over the detection of CN and NC bases. The natural population analysis (NPA) and electron density difference map (EDDM) confirms that charges are transferred from CN and NC bases to Si2BN and P-dop-Si2BN sheet. The optical property of the P-dop-Si2BN complexes reveals that the noticeable red and blue shift in the visible and near-infrared regions (778 nm to 1143 nm) has been observed. Therefore, the above results conclude that the P-dop-Si2BN sheet plays a potential candidate to detect the CN and NC bases which contribute to the development of biosensors and DNA/RNA sequencing devices.Communicated by Ramaswamy H. Sarma.
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Affiliation(s)
- Akilesh Muralidharan
- Molecular Simulation Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamilnadu, India
| | - Mohanapriya Subramani
- Molecular Simulation Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamilnadu, India
| | - Divyakaaviri Subramani
- Molecular Simulation Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamilnadu, India
| | - Shankar Ramasamy
- Molecular Simulation Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamilnadu, India
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Ibrahim MAA, Hamad MHA, Mahmoud AHM, Mekhemer GAH, Sidhom PA, Sayed SRM, Moussa NAM, Rabee AIM, Dabbish E, Shoeib T. Adsorption of Favipiravir on pristine graphene nanosheets as a drug delivery system: a DFT study. RSC Adv 2023; 13:17465-17475. [PMID: 37304808 PMCID: PMC10253565 DOI: 10.1039/d3ra03227b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Accepted: 05/29/2023] [Indexed: 06/13/2023] Open
Abstract
The efficiency of pristine graphene (GN) in the delivery process of the Favipiravir (FPV) anti-COVID-19 drug was herein revealed within the FPV⋯GN complexes in perpendicular and parallel configurations in terms of the density functional theory (DFT) method. Adsorption energy findings unveiled that the parallel configuration of FPV⋯GN complexes showed higher desirability than the perpendicular one, giving adsorption energy up to -15.95 kcal mol-1. This favorability could be interpreted as a consequence of the contribution of π-π stacking to the overall strength of the adsorption process in the parallel configuration. Frontier molecular orbitals (FMO) findings demonstrated the ability of the GN nanosheet to adsorb the FPV drug by the alteration in the EHOMO, ELUMO, and Egap values before and after the adsorption process. Based on Bader charge results, the FPV drug and GN sheet exhibited electron-donating and -accepting characters, respectively, which was confirmed by the negative sign of the computed charge transfer (Qt) values. The FPV(R)⋯T@GN complex showed the most desirable Qt value of -0.0377e, which was in synoptic with the adsorption energy pattern. Electronic properties of GN were also altered after the adsorption of the FPV drug in both configurations, with more observable changes in the parallel one. Interestingly, the Dirac point of the GN sheet coincided with the Fermi level after the adsorption process, indicating that the adsorption process unaffected the presence of the Dirac point. The occurrence of the adsorption process was also noticed by the existence of new bands and peaks in the band structure and DOS plots, respectively. Short recovery time rendered the GN nanosheet an efficient FPV drug delivery system. The obtained findings provide new insight into the biomedical applications of the GN sheet as a promising drug delivery system.
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Affiliation(s)
- Mahmoud A A Ibrahim
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University Minia 61519 Egypt
- School of Health Sciences, University of KwaZulu-Natal Westville Campus Durban 4000 South Africa
| | - Manar H A Hamad
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University Minia 61519 Egypt
| | - Amna H M Mahmoud
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University Minia 61519 Egypt
| | - Gamal A H Mekhemer
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University Minia 61519 Egypt
| | - Peter A Sidhom
- Department of Pharmaceutical Chemistry, Faculty of Pharmacy, Tanta University Tanta 31527 Egypt
| | - Shaban R M Sayed
- Department of Botany and Microbiology, College of Science, King Saud University P.O. Box 2455 Riyadh 11451 Saudi Arabia
| | - Nayra A M Moussa
- Computational Chemistry Laboratory, Chemistry Department, Faculty of Science, Minia University Minia 61519 Egypt
| | - Abdallah I M Rabee
- Leibniz-Institut für Katalyse Albert-Einstein-Str. 29 A 18059 Rostock Germany
| | - Eslam Dabbish
- Department of Chemistry, The American University in Cairo New Cairo 11835 Egypt
| | - Tamer Shoeib
- Department of Chemistry, The American University in Cairo New Cairo 11835 Egypt
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Roondhe V, Roondhe B, Saxena S, Ahuja R, Shukla A. On using non-Kekulé triangular graphene quantum dots for scavenging hazardous sulfur hexafluoride components. Heliyon 2023; 9:e15388. [PMID: 37123910 PMCID: PMC10130882 DOI: 10.1016/j.heliyon.2023.e15388] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Revised: 04/03/2023] [Accepted: 04/05/2023] [Indexed: 05/02/2023] Open
Abstract
The goal of present study is to explore how the size and functionalization of graphene quantum dots (GQDs) affect their sensing capabilities. Specifically, we investigated the adsorption of SO2, SOF2, SO2F2, and SF6 on GQDs that were functionalized with -CH3, -COCH3, and -NH2. We used density functional theory to analyse the electronic properties of these functionalized GQDs and found that the functionalization significantly altered their electronic properties. For example, the B3LYP H-L gap of pristine triangulene was 3.9eV, while the H-L gap of functionalized triangulene ranged from 2.8 eV to 3.6 eV (using the B3LYP functional). Our results indicate that -NH2 functionalized phenalenyl and triangulene provide strong interaction with SO2, with adsorption energies of -0.429 eV and -0.427 eV, respectively. These adsorption properties exhibit physisorption, leading to high gas sensitivity and superior recovery time. The findings of this study provide new insights into the potential use of GQDs for detecting the decomposed constituents of sulfur hexafluoride, which can be beneficial for assessing the operation status of SF6 insulated devices. Overall, our calculations suggest that functionalized GQDs can be employed in gas insulated systems for partial discharge detection.
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Affiliation(s)
- Vaishali Roondhe
- Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India
- Corresponding author.
| | - Basant Roondhe
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India
| | - Sumit Saxena
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India
| | - Rajeev Ahuja
- Materials Theory Division, Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala 75120, Sweden
- Department of Physics, Indian Institute of Technology Ropar, 140001, Punjab, India
- Corresponding author. Materials Theory Division, Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala 75120, Sweden.
| | - Alok Shukla
- Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India
- Corresponding author.
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Selective adsorption and dissociation of NO, NO 2, and N 2O molecules on Si-doped haeckelite boron nitride nanotube: an investigation for sensitive molecular sensors and catalysts. J Mol Model 2021; 28:6. [PMID: 34889992 DOI: 10.1007/s00894-021-04981-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Accepted: 11/10/2021] [Indexed: 11/27/2022]
Abstract
The current study describes the investigation of the adsorption NO, N2O, and NO2 on haeckelite boron nitride nanotube doped with Si (Si-doped haeck-BNNT) by means of density functional theory calculation (DFT). The obtained results confirmed the energetic stability of the optimized geometries and revealed that the adsorption of the gas molecules with the nanotube sidewall is a spontaneous process. The calculated work function of Si-doped haeck-BNNT in the presence of gas molecules is greater than that of a bare Si-doped haeck-BNNT sheet. The energy gap of the Si-doped haeck-BNNT is sensitive to the adsorption of the gas molecules, which implies possible future applications in gas sensors. For most of the adsorption configurations studied, the adsorption energies for the SiB-doped haeck-BNNT are higher than those for SiN-doped haeck-BNNTones. The N2O gas molecule is totally dissociated into N2 and O species through the adsorption process, while the other gas molecules retain their molecular forms. Thus, the SiN-doped haeck-BNNT is a likely catalyst for dissociation of the N2O gas molecule. Our findings divulge promising potential of the doped haeck-BNNT as a highly sensitive molecular sensor for NO and NO2 detection and a catalyst for N2O dissociation.
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Opoku F, Govender PP. SF 6 decomposed gas sensing performance of van der Waals layered cobalt oxyhydroxide: insights from a computational study. J Mol Model 2021; 27:158. [PMID: 33963473 DOI: 10.1007/s00894-021-04770-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2020] [Accepted: 04/21/2021] [Indexed: 11/24/2022]
Abstract
The detection of SF6 decomposition products plays a significant part in identifying and assessing the electric discharge faults in SF6 insulation equipment. We performed dispersion corrected density functional theory calculations to study the adsorption performance of CoOOH upon SO2, SF4, SOF2, CF4, and SO2F2 toxic gases, to investigate their potential application as a gas sensor. The results clearly show a weak force between the CoOOH sheet, and the molecular gas with moderate adsorption strength enhances the desorption processes. According to Löwdin charge population analysis, electrons transfer from the molecular gas to the CoOOH surface, where the molecular gas behaves like an electron donor. The lower bandgap energy of the adsorption systems compared with pristine CoOOH significantly increases its electrical conductivity and gas sensing performance. The higher charge transfer and adsorption energy of the SOF2 adsorption system compared with the other four molecular gas is due to orbital hybridization around the Fermi energy. The theoretical computed adsorption energy with ultrahigh sensitivity and fast recovery time suggests that SF6 decomposed gases reusability is achieved with CoOOH as a resistance-type gas sensor.
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Affiliation(s)
- Francis Opoku
- Department of Chemical Sciences (formerly Department of Applied Chemistry), University of Johannesburg, P.O. Box 17011, Doornfontein Campus, Johannesburg, 2028, South Africa.
| | - Penny P Govender
- Department of Chemical Sciences (formerly Department of Applied Chemistry), University of Johannesburg, P.O. Box 17011, Doornfontein Campus, Johannesburg, 2028, South Africa.
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Vaidyanathan A, Mathew M, Radhakrishnan S, Rout CS, Chakraborty B. Theoretical Insight on the Biosensing Applications of 2D Materials. J Phys Chem B 2020; 124:11098-11122. [PMID: 33232607 DOI: 10.1021/acs.jpcb.0c08539] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
The research on the design of efficient, reliable, and cost-effective biosensors is expanding given its high demand in various fields such as health care, environmental surveillance, agriculture, diagnostics, industries, and so forth. In the last decade, various fascinating and interesting 2D materials with extraordinary properties have been experimentally synthesized and theoretically predicted. 2D materials have been explored for the sensing of different biomolecules because of their large surface area and strong interaction with different biomolecules. Theoretical simulations can bring important insight on the interaction of biomolecules on 2D materials, charge transfer, orbital interactions, and so forth and may play an important role in the development of efficient biosensors. Quantum simulation techniques, such as density functional theory (DFT), are very powerful and are gaining popularity especially with the advent of high-speed computing facilities. This review article provides theoretical insight regarding the interaction of various biomolecules on different 2D materials and the charge transfer between the biomolecules and 2D materials leading to electrochemical signals, which can then provide experimentalists the useful design parameters for fabrication of biosensors. It also includes an overview of quantum simulations, use of the DFT method for simulating biomolecules on 2D materials, parameters obtained from theoretical simulations and sensitivity, and limitations of computational techniques for sensing biomolecules on 2D materials. Furthermore, this review summarizes the recent work in first-principles investigation of 2D materials for the purpose of biomolecule sensing. Beyond the traditional graphene or 2D transition-metal dichalcogenides, some novel and recently proposed 2D materials such as pentagraphene, haeckelite, MXenes, and so forth which have exhibited good sensing applications have also been highlighted.
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Affiliation(s)
- Antara Vaidyanathan
- Department of Chemistry, Ramnarain Ruia Autonomous College, Matunga, Mumbai 400019, India
| | - Minu Mathew
- Centre for Nano and Material Science, Jain University, Jain Global Campus, Jakkasandra, Ramanagara, Bangalore 562112, India
| | - Sithara Radhakrishnan
- Centre for Nano and Material Science, Jain University, Jain Global Campus, Jakkasandra, Ramanagara, Bangalore 562112, India
| | - Chandra Sekhar Rout
- Centre for Nano and Material Science, Jain University, Jain Global Campus, Jakkasandra, Ramanagara, Bangalore 562112, India
| | - Brahmananda Chakraborty
- High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India.,Homi Bhabha National Institute, Mumbai 400094, India
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Lee J, Ryu JH, Kim B, Hussain F, Mahata C, Sim E, Ismail M, Abbas Y, Abbas H, Lee DK, Kim MH, Kim Y, Choi C, Park BG, Kim S. Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33908-33916. [PMID: 32608233 DOI: 10.1021/acsami.0c07867] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this study, the resistive switching and synaptic properties of a complementary metal-oxide semiconductor-compatible Ti/a-BN/Si device are investigated for neuromorphic systems. A gradual change in resistance is observed in a positive SET operation in which Ti diffusion is involved in the conducting path. This operation is extremely suitable for synaptic devices in hardware-based neuromorphic systems. The isosurface charge density plots and experimental results confirm that boron vacancies can help generate a conducting path, whereas the conducting path generated by a Ti cation from interdiffusion forms is limited. A negative SET operation causes a considerable decrease in the formation energy of only boron vacancies, thereby increasing the conductivity in the low-resistance state, which may be related to RESET failure and poor endurance. The pulse transient characteristics, potentiation and depression characteristics, and good retention property of eight multilevel cells also indicate that the positive SET operation is more suitable for a synaptic device owing to the gradual modulation of conductance. Moreover, pattern recognition accuracy is examined by considering the conductance values of the measured data in the Ti/a-BN/Si device as the synaptic part of a neural network. The linear and symmetric synaptic weight update in a positive SET operation with an incremental voltage pulse scheme ensures higher pattern recognition accuracy.
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Affiliation(s)
- Jinju Lee
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Ji-Ho Ryu
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Boram Kim
- School of Electrical and Computer Engineering, University of Seoul, Seoul, 02504, South Korea
| | - Fayyaz Hussain
- Materials Research Simulation Laboratory (MSRL) Department of physics, Bahauddin Zakariya University, Multan 60800, Pakistan
| | - Chandreswar Mahata
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Eunjin Sim
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Muhammad Ismail
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Yawar Abbas
- Department of Physics, Khalifa University, Abu Dhabi 127788, United Arab Emirates
| | - Haider Abbas
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea
| | - Dong Keun Lee
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Min-Hwi Kim
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Yoon Kim
- School of Electrical and Computer Engineering, University of Seoul, Seoul, 02504, South Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea
| | - Byung-Gook Park
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
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Lin XY, Meng FS, Liu QC, Xue Q, Zhang H. Semiconducting two-dimensional group VA-VA haeckelite compounds with superior carrier mobility. Phys Chem Chem Phys 2020; 22:12260-12266. [PMID: 32432257 DOI: 10.1039/d0cp01306d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A series of two-dimensional (2D) single-layer binary group VA-VA crystals, where VA represents P, As, Sb and Bi, are explored by the first-principles calculations. Unlike the orthorhombic α-phase and hexagonal β-phase, these crystals have a tetragonal haeckelite lattice and are named as T-VA-VAs. These ultrathin 2D materials have high thermal stability and are semiconductors with moderate band gaps ranging from 0.80 to 2.68 eV (HSE06). The band gaps show a prevalent linear correlation with average ionization energies (AIEs) of different composites, and thus can be effectively designed. Furthermore, these materials exhibit superior carrier mobility, e.g. 2.96 × 103 cm-2 V-1 s-1 of T-SbBi, and considerable visible light absorption index. These novel 2D binary materials are expected to be fabricated and used as nanoelectronics and for solar energy harvesting.
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Affiliation(s)
- Xin-Yue Lin
- Normal School, Shenyang University, Shenyang 110044, China.
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11
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Hanf MC, Marjaoui A, Stephan R, Zanouni M, Diani M, Sonnet P. Undulated silicene and germanene freestanding layers: why not? JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:195503. [PMID: 31931489 DOI: 10.1088/1361-648x/ab6ae8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Silicene and germanene freestanding layers are usually described as a honeycomb lattice formed by two hexagonal sub-lattices presenting a height difference, namely the layer buckling. In this work, first-principles calculations show that silicene and germanene can be rippled at 0 K with various wavelengths, without any compressive strain of the layer. For germanene, the height difference between two Ge atoms from the same sub-lattice can be as high as 4.7 [Formula: see text] for an undulation length of 81 [Formula: see text]. The deformations are related to slight (lower than 1.7°) bond angle modifications, and the energy cost is remarkably low, lying between 0.1 and 0.8 meV per atom. These undulations modify the electronic structure, opening a gap of 15 meV.
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Affiliation(s)
- M-C Hanf
- Université de Haute Alsace, CNRS, IS2M UMR7361,68100 Mulhouse, France. Université de Strasbourg, France
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de la Garza CGV, Narváez WEV, Rodríguez LDS, Fomine S. Electronic structure of hybrid pentaheptite carbon nanoflakes containing boron-nitrogen motifs. J Mol Model 2020; 26:72. [DOI: 10.1007/s00894-020-4324-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2019] [Accepted: 02/23/2020] [Indexed: 10/24/2022]
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13
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Kistanov AA. The first-principles study of the adsorption of NH3, NO, and NO2 gas molecules on InSe-like phosphorus carbide. NEW J CHEM 2020. [DOI: 10.1039/d0nj01612h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Novel γ-PC is a promising reversible material for room-temperature gas sensors.
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Affiliation(s)
- Andrey A. Kistanov
- Nano and Molecular Systems Research Unit
- University of Oulu
- 90014 Oulu
- Finland
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