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Xu T, Zeng X, Hu S, Wang W, Bao X, Peng Y, Deng H, Gan Z, Wen Z, Zhang W, Chen L. Rapid and large-scale synthesis of MoS 2via ultraviolet laser-assisted technology for photodetector applications. NANOTECHNOLOGY 2024; 35:325601. [PMID: 38306698 DOI: 10.1088/1361-6528/ad2571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 02/02/2024] [Indexed: 02/04/2024]
Abstract
Two-dimensional transition metal dichalcogenide (TMDC) thin films have been extensively employed in microelectronics research. Molybdenum disulfide (MoS2), as one of prominent candidates of this class, has been applied in photodetectors, integrated electronic devices, gas sensing, and electrochemical catalysis, owing to its extraordinary optoelectronic, chemical, and mechanical properties. Synthesis of MoS2crystal film is the key to its application. However, the reported technology revealed several drawbacks, containing limited surface area, prolonged high-temperature environment, and unsatisfying crystallinity. In order to enhance the convenience of MoS2applications, there is a pressing need for optimized fabrication technology, which could be quicker, with a large area, with adequate crystallinity and heat-saving. In this work, we presented an ultraviolet laser-assisted synthesis technology, accomplishing rapid growth (with the growth rate of about 40μm s-1) of centimeter-scale MoS2films at room temperature. To achieve this, we self-assembled a displaceable reaction chamber system, coupled with krypton fluoride ultraviolet pulse laser. The laser motion speed and trajectory could be customized in the software, allowing the maskless patterning of crystal films. As application, we exhibited a photodetector with the integration of synthesized MoS2and lead sulfide colloidal quantum dots (PbS CQDs), displaying broadband photodetection from ultraviolet, visible to near-infrared spectrum (365-1550 nm), with the detectivity of 109-1010Jones, and the rising time of 0.2-0.3 s. This work not only demonstrated a high-process-efficiency synthesis of TMDC materials, but also has opened up new opportunities for ultraviolet laser used in optoelectronics.
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Affiliation(s)
- Tingwei Xu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xiangbin Zeng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Wenzhou Key Laboratory of Optoelectronic Materials and Devices Application, Wenzhou Advanced Manufacturing Institute of HUST, Wenzhou 325000, People's Republic of China
| | - Shijiao Hu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Wenzhao Wang
- School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China
| | - Xiaoqing Bao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Yu Peng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Huaicheng Deng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Zhuocheng Gan
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Zhiqi Wen
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Wenhao Zhang
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Lihong Chen
- School of Artificial Intelligence and Information Engineering, West Yunnan University, Yunnan 677000, People's Republic of China
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2
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He Y, Hu Y, Peng M, Fu L, Gao E, Liu Z, Dong C, Li S, Ge C, Yuan C, Bao X, Li K, Chen C, Tang J. One-Dimensional Crystal-Structure Te-Se Alloy for Flexible Shortwave Infrared Photodetector and Imaging. NANO LETTERS 2024; 24:5774-5782. [PMID: 38709116 DOI: 10.1021/acs.nanolett.4c00881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2024]
Abstract
Flexible shortwave infrared detectors play a crucial role in wearable devices, bioimaging, automatic control, etc. Commercial shortwave infrared detectors face challenges in achieving flexibility due to the high fabrication temperature and rigid material properties. Herein, we develop a high-performance flexible Te0.7Se0.3 photodetector, resulting from the unique 1D crystal structure and small elastic modulus of Te-Se alloying. The flexible photodetector exhibits a broad-spectrum response ranging from 365 to 1650 nm, a fast response time of 6 μs, a broad linear dynamic range of 76 dB, and a specific detectivity of 4.8 × 1010 Jones at room temperature. The responsivity of the flexible detector remains at 93% of its initial value after bending with a small curvature of 3 mm. Based on the optimized flexible detector, we demonstrate its application in shortwave infrared imaging. These results showcase the great potential of Te0.7Se0.3 photodetectors for flexible electronics.
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Affiliation(s)
- Yuming He
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Yuxuan Hu
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Liuchong Fu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Ertan Gao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zunyu Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Chong Dong
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Sen Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Ciyu Ge
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Can Yuan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xiaoqing Bao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Optics Valley Laboratory, Hubei 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Optics Valley Laboratory, Hubei 430074, China
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3
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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Ra HS, Lee SH, Jeong SJ, Cho S, Lee JS. Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications. SMALL METHODS 2024; 8:e2300245. [PMID: 37330655 DOI: 10.1002/smtd.202300245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/20/2023] [Indexed: 06/19/2023]
Abstract
Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.
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Affiliation(s)
- Hyun-Soo Ra
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain
| | - Sang-Hyeon Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Seock-Jin Jeong
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Sinyoung Cho
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jong-Soo Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
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5
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Zhao X, Wang X, Jia R, Lin Y, Guo T, Wu L, Hu X, Zhao T, Yan D, Zhu L, Chen Z, Xu X, Chen X, Song X. High-sensitivity hybrid MoSe 2/AgInGaS quantum dot heterojunction photodetector. RSC Adv 2024; 14:1962-1969. [PMID: 38196903 PMCID: PMC10774710 DOI: 10.1039/d3ra07240a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 01/04/2024] [Indexed: 01/11/2024] Open
Abstract
Zero-dimensional (0D)-two-dimensional (2D) hybrid photodetectors have received widespread attention due to their outstanding photoelectric performances. However, these devices with high performances mainly employ quantum dots that contain toxic elements as sensitizing layers, which restricts their practical applications. In this work, we used eco-friendly AgInGaS quantum dots (AIGS-QDs) as a highly light-absorbing layer and molybdenum diselenide (MoSe2) as a charge transfer layer to construct a 0D-2D hybrid photodetector. Notably, we observed that MoSe2 strongly quenches the photoluminescence (PL) of AIGS-QDs and decreases the decay time of PL in the MoSe2/AIGS-QDs heterojunction. The MoSe2/AIGS-QDs hybrid photodetector demonstrates a responsivity of 14.3 A W-1 and a high detectivity of 6.4 × 1011 Jones. Moreover, the detectivity of the hybrid phototransistor is significantly enhanced by more than three times compared with that of the MoSe2 photodetector. Our work suggests that 0D-2D hybrid photodetectors with multiplex I-III-VI QDs provide promising potential for future high-sensitivity photodetectors.
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Affiliation(s)
- Xunjia Zhao
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xusheng Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Runmeng Jia
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Yuhai Lin
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - TingTing Guo
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Linxiang Wu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xudong Hu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Tong Zhao
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Danni Yan
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Lin Zhu
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Zhanyang Chen
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Xinsen Xu
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xiufeng Song
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
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Elbanna A, Jiang H, Fu Q, Zhu JF, Liu Y, Zhao M, Liu D, Lai S, Chua XW, Pan J, Shen ZX, Wu L, Liu Z, Qiu CW, Teng J. 2D Material Infrared Photonics and Plasmonics. ACS NANO 2023; 17:4134-4179. [PMID: 36821785 DOI: 10.1021/acsnano.2c10705] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.
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Affiliation(s)
- Ahmed Elbanna
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Hao Jiang
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Juan-Feng Zhu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Yuanda Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Meng Zhao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Dongjue Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Samuel Lai
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xian Wei Chua
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Ze Xiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
- Interdisciplinary Graduate Program, Energy Research Institute@NTU, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 Singapore
| | - Lin Wu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
- Institute of High Performance Computing, Agency for Science Technology and Research (A*STAR), 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
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Yang S, Han J, Zhang J, Kong Y, Liu H. In Situ Growth of PbS/PbI 2 Heterojunction and Its Photoelectric Properties. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:681. [PMID: 35215009 PMCID: PMC8879748 DOI: 10.3390/nano12040681] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2022] [Revised: 02/04/2022] [Accepted: 02/15/2022] [Indexed: 11/16/2022]
Abstract
In this paper, PbI2 thin films with a uniform surface morphology and compact structure were prepared by adjusting the spin coating process parameters. On such a basis, the PbS/PbI2 heterojunction was fabricated on the PbI2 surface by the method of in situ chemical replacement growth. The results show that the PbS/PbI2 heterojunction grown by this method has a clear interface and is closely combined. The introduction of a PbS layer enables its spectral response range to cover the visible and near-infrared regions. Compared with the PbI2 thin film device, its responsivity is increased by three orders of magnitude, its response time reduced by 42%, and its recovery time decreased by nearly 1/2 under 450 nm illumination. In the case that there is no response for the PbI2 thin film device under 980 nm illumination, the specific detectivity of the PbS/PbI2 heterojunction device still amounts to 1.8 × 108 Jones. This indicates that the in situ chemical replacement is a technique that can construct a high-quality heterojunction in a simple process. PbS/PbI2 heterojunction fabricated by this method has a visible-near-infrared light detection response range, which provides a new idea for creating visible-near-infrared common-path detection systems.
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Affiliation(s)
- Shangxun Yang
- School of Weapons Science and Technology, Xi’an Technological University, Xi’an 710032, China;
| | - Jun Han
- School of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710032, China; (J.Z.); (Y.K.); (H.L.)
| | - Jin Zhang
- School of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710032, China; (J.Z.); (Y.K.); (H.L.)
| | - Yingxiu Kong
- School of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710032, China; (J.Z.); (Y.K.); (H.L.)
| | - Huan Liu
- School of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710032, China; (J.Z.); (Y.K.); (H.L.)
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8
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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Jana S, Mukherjee S, Bhaktha B N S, Ray SK. Plasmonic Silver Nanoparticle-Mediated Enhanced Broadband Photoresponse of Few-Layer Phosphorene/Si Vertical Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:1699-1709. [PMID: 34932300 DOI: 10.1021/acsami.1c19309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report the superior broadband photodetection characteristics of few-layer phosphorene known as black phosphorus (BP) nanosheets integrated with silver nanoparticles (Ag NPs) using vertical heterojunctions on a Si platform. The exfoliation of BP nanosheets and preparation of an Ag NP:BP (Ag-BP) hybrid have been accomplished through environment-friendly and cost-effective chemical routes. The hybrid sample exhibits broadband light absorption with a strong plasmonic peak around ∼425 nm due to the localized surface plasmon resonance (LSPR) of Ag NPs of average size ∼6.0 nm. Spectroscopic analysis of the Ag-BP hybrid ascertains strong light-matter interactions around the LSPR band of Ag NPs. The size-dependent optical response of BP nanostructure/Si state-of-the-art broadband (300-1600 nm) photodiodes has been studied extensively. The enhancement of broadband photoresponse characteristics is demonstrated using the plasmonic Ag-BP 0D-2D hybrid nanostructure compared to pristine BP, where the peak responsivity in the former is shifted to the visible region (∼440 nm) compared to UV response (∼340 nm) of the latter. The tunable spectral responsivity with a peak value of ∼3.2 A/W (@ ∼440 nm and -5 V) for the Ag-BP/Si heterojunction device demonstrates the potential of plasmonic BP hybrids for future nanophotonic devices.
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Affiliation(s)
- Subhajit Jana
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, West Bengal, India
| | - Subhrajit Mukherjee
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, West Bengal, India
| | - Shivakiran Bhaktha B N
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, West Bengal, India
| | - Samit K Ray
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, West Bengal, India
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Alzakia FI, Tan SC. Liquid-Exfoliated 2D Materials for Optoelectronic Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003864. [PMID: 34105282 PMCID: PMC8188210 DOI: 10.1002/advs.202003864] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2020] [Revised: 01/19/2021] [Indexed: 05/14/2023]
Abstract
Two-dimensional (2D) materials have attracted tremendous research attention in recent days due to their extraordinary and unique properties upon exfoliation from the bulk form, which are useful for many applications such as electronics, optoelectronics, catalysis, etc. Liquid exfoliation method of 2D materials offers a facile and low-cost route to produce large quantities of mono- and few-layer 2D nanosheets in a commercially viable way. Optoelectronic devices such as photodetectors fabricated from percolating networks of liquid-exfoliated 2D materials offer advantages compared to conventional devices, including low cost, less complicated process, and higher flexibility, making them more suitable for the next generation wearable devices. This review summarizes the recent progress on metal-semiconductor-metal (MSM) photodetectors fabricated from percolating network of 2D nanosheets obtained from liquid exfoliation methods. In addition, hybrids and mixtures with other photosensitive materials, such as quantum dots, nanowires, nanorods, etc. are also discussed. First, the various methods of liquid exfoliation of 2D materials, size selection methods, and photodetection mechanisms that are responsible for light detection in networks of 2D nanosheets are briefly reviewed. At the end, some potential strategies to further improve the performance the devices are proposed.
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Affiliation(s)
- Fuad Indra Alzakia
- Department of Materials Science and EngineeringNational University of Singapore9 Engineering drive 1Singapore117574Singapore
| | - Swee Ching Tan
- Department of Materials Science and EngineeringNational University of Singapore9 Engineering drive 1Singapore117574Singapore
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11
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Kang P, Zheng KG, Wang Z, Chen L, Guo Z. Cation-exchange synthesis of PbSe/ZnSe hetero-nanobelts with enhanced near-infrared photoelectronic performance. NANOTECHNOLOGY 2021; 32:335504. [PMID: 34048367 DOI: 10.1088/1361-6528/ac0192] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2021] [Accepted: 05/14/2021] [Indexed: 06/12/2023]
Abstract
To develop excellent photoelectronic and photovoltaic devices, a semiconductor with high photoelectron production efficiency and broad band absorption is urgently required. In this article, novel II-type PbSe/ZnSe hetero-nanobelts with enhanced near-infrared absorption have been synthesized via a facile strategy of a partial cation-exchange reaction and thermal treatment. Derived from ZnSe·0.5N2H4nanobelts as templates, the belt-like morphology was preserved. Due to the mismatch of the crystal type and parameters between PbSe and ZnSe, the formed PbSe in the form of nanoparticles were separated out and decorated on the nanobelts. Furthermore, the composition ratio of Pb/Zn can be tuned through manipulating the adding amount of Pb2+cations, the reaction temperature and time. The ultraviolet-visible-infrared diffuse spectra measurements suggest that the as-prepared PbSe/ZnSe hetero-nanobelts exhibited a broad band absorption from 300 to 1000 nm. In addition, they demonstrated excellent photoresponsivity in the same wavelength region and displayed a peak at approximately 840 nm. Finally, the enhanced photoelectronic sensing mechanism was discussed.
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Affiliation(s)
- Ping Kang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Hefei 230601, People's Republic of China
| | - Kai-Ge Zheng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Hefei 230601, People's Republic of China
| | - Zhuo Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Hefei 230601, People's Republic of China
| | - Li Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Hefei 230601, People's Republic of China
| | - Zheng Guo
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Hefei 230601, People's Republic of China
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Han L, Yang M, Wen P, Gao W, Huo N, Li J. A high performance self-powered photodetector based on a 1D Te-2D WS 2 mixed-dimensional heterostructure. NANOSCALE ADVANCES 2021; 3:2657-2665. [PMID: 36134149 PMCID: PMC9419060 DOI: 10.1039/d1na00073j] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Accepted: 03/14/2021] [Indexed: 05/21/2023]
Abstract
One-dimensional (1D)-two-dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of an atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. Herein, a mixed-dimensional vertical heterostructure is constructed by transferring mechanically exfoliated 2D WS2 nanosheets on epitaxially grown 1D tellurium (Te) microwires. According to the theoretical type-II band alignment, the device exhibits a photovoltaic effect and serves as an excellent self-powered photodetector with a maximum open-circuit voltage (V oc) up to ∼0.2 V. Upon 635 nm light illumination, the photoresponsivity, external quantum efficiency and detectivity of the self-powered photodetector (SPPD) are calculated to be 471 mA W-1, 91% and 1.24 × 1012 Jones, respectively. Moreover, the dark current of the SPPD is highly suppressed to the sub-pA level due to the large lateral built-in electric field, which leads to a high I light/I dark ratio of 104 with a rise time of 25 ms and decay time of 14.7 ms. The abovementioned properties can be further enhanced under a negative bias of -2 V. In brief, the 1D Te-2D WS2 mixed-dimensional heterostructures have great application potential in high performance photodetectors and photovoltaics.
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Affiliation(s)
- Lixiang Han
- School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Mengmeng Yang
- School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
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Han Q, Wang H, Wu D, Wei Q. Preparation of PbS NPs/RGO/NiO nanosheet arrays heterostructure: Function-switchable self-powered photoelectrochemical biosensor for H 2O 2 and glucose monitoring. Biosens Bioelectron 2020; 173:112803. [PMID: 33189016 DOI: 10.1016/j.bios.2020.112803] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2020] [Revised: 11/03/2020] [Accepted: 11/04/2020] [Indexed: 10/23/2022]
Abstract
On the basis of synthesized PbS nanoparticles (PbS NPs)/reduced graphene oxide (RGO)/NiO nanosheet arrays (NiO NSAs) heterostructure, we constructed a function-switchable self-powered PEC sensing platform for the analysis of H2O2 and glucose. Ordered NiO NSAs have high electron mobility, modifying RGO onto the surfaces of NiO NSAs can connect the NiO NSAs with the PbS NPs and promoted the electron transfer rate between them, as well as enhance their photocurrent response. The PbS NPs/RGO/NiO NSAs heterostructure own excellent catalase-like activity can achieve H2O2 detection, only with one more step, after introducing glucose oxidase (GOD) onto the surface of PbS NPs/RGO/NiO NSAs heterostructure, we realized the detection conversion between H2O2 and glucose. Under optimal conditions, the proposed biosensor exhibited superior analytical performance toward H2O2 and glucose, a limit of detection (LOD) of 0.018 mM (S/N = 3) and 5.3 × 10-8 M (S/N = 3) were obtained, respectively. Moreover, good accuracy was obtained in the real samples analysis of H2O2 disinfectant and human serum samples.
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Affiliation(s)
- Qingzhi Han
- Collaborative Innovation Center for Green Chemical Manufacturing and Accurate Detection, School of Chemistry and Chemical Engineering, University of Jinan, Jinan, 250022, PR China; Key Laboratory of Interfacial Reaction & Sensing Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan, 250022, PR China; Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, China
| | - Hanyu Wang
- Collaborative Innovation Center for Green Chemical Manufacturing and Accurate Detection, School of Chemistry and Chemical Engineering, University of Jinan, Jinan, 250022, PR China; Key Laboratory of Interfacial Reaction & Sensing Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan, 250022, PR China
| | - Dan Wu
- Collaborative Innovation Center for Green Chemical Manufacturing and Accurate Detection, School of Chemistry and Chemical Engineering, University of Jinan, Jinan, 250022, PR China; Key Laboratory of Interfacial Reaction & Sensing Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan, 250022, PR China.
| | - Qin Wei
- Collaborative Innovation Center for Green Chemical Manufacturing and Accurate Detection, School of Chemistry and Chemical Engineering, University of Jinan, Jinan, 250022, PR China; Key Laboratory of Interfacial Reaction & Sensing Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan, 250022, PR China
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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Bhattacharya D, Mukherjee S, Mitra RK, Ray SK. Size-dependent optical properties of MoS 2 nanoparticles and their photo-catalytic applications. NANOTECHNOLOGY 2020; 31:145701. [PMID: 31835257 DOI: 10.1088/1361-6528/ab61ce] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
While two-dimensional (2D) layered MoS2 nanosheets have been extensively studied owing to their fascinating optoelectronic properties, less attention has been paid to the corresponding zero-dimensional nano-crystals. In this contribution, we report the efficacy of MoS2 nanocrystals for their size tunable properties for optical and photocatalytic applications. We have synthesized differently sized (10-70 nm) crystalline, hexagonal 2H-MoS2 nanoparticles (NPs) dispersed in DMF solvent using a simple exfoliation technique. Synthesized NPs are found to exhibit size-dependent optical properties and excitation-dependent fluorescence characteristics in the visible region, which are otherwise not observed in bulk or 2D MoS2 layers. Size tunable bandgap and broad absorbance and emission spectrum covering the visible range could be exploited in the fabrication of various opto-electronic devices. Charge carrier emission dynamics of differently sized MoS2 NPs are investigated using time correlated single photon counting (TCSPC) spectroscopic technique. We found two time components, one in the order of several hundreds of ps, which arises due to the radiative recombination of charge carriers, while the other one is of the order of a few ns, which emanates from the defect states of MoS2 NPs. The average time constants are found to decrease with increase in particle size. A noticeable photocatalytic activity of the synthesized MoS2 NPs under visible light illumination for the degradation of brilliant green dye is also demonstrated for the first time and the effect of size variation of NPs in the dye degradation process is reported.
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Affiliation(s)
- Didhiti Bhattacharya
- Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India. Department of Chemical Biological and Macromolecular Sciences, S. N. Bose national Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India
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