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Xu Y, Li D. Enhanced electron transport and optical properties of experimentally synthesized monolayer Si 9C 15: a comprehensive DFT study for nanoelectronics and photocatalytic applications. Phys Chem Chem Phys 2024; 26:21789-21800. [PMID: 39101563 DOI: 10.1039/d4cp01456a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
Two-dimensional silicon-carbide (SixCy) materials stand out for their compatibility with current silicon-based technologies, offering unique advantages in nanoelectronics and photocatalysis. In this study, we employ density functional theory and nonequilibrium Green's function methods to investigate the electronic properties, electron transport characteristics, and optoelectronic qualities of experimentally synthesized monolayer Si9C15. Utilizing the modified deformation potential theory formula, we unveil Si9C15's significant directional anisotropy in electron mobility (706.42 cm2 V-1 s-1) compared to holes (432.84 cm2 V-1 s-1) in the a direction. The electrical transport calculations reveal that configurations with a 3 nm channel length demonstrate an ON state when biased, reaching a peak current of 150 nA. Moreover, this maximum current value escalates to 200 nA under tensile strain, marking an increase of approximately 100 times compared to the 5 nm channel, which remains in an OFF state. Si9C15 exhibits high light absorption coefficients (∼105 cm-1) and suitable band edge positions for water splitting at pH 0-7. Applying 1-5% tensile strain can tune the conduction band minimum and valence band maximum closer to the standard redox potentials, enhancing photocatalytic water splitting efficiency. Remarkably, under illumination at pH 0 and 7, Si9C15 can spontaneously catalyze water splitting, demonstrating its potential as a highly efficient photocatalyst. Our findings emphasize the importance of strain control and device length optimization for performance enhancement in nanoelectronics and renewable energy applications, positioning Si9C15 as a promising material for high-performance field-effect transistors and photocatalytic water splitting.
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Affiliation(s)
- Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - Daqing Li
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
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Hlushchenko D, Siudzinska A, Cybinska J, Guzik M, Bachmatiuk A, Kudrawiec R. Stability of mechanically exfoliated layered monochalcogenides under ambient conditions. Sci Rep 2023; 13:19114. [PMID: 37925524 PMCID: PMC10625602 DOI: 10.1038/s41598-023-46092-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 10/27/2023] [Indexed: 11/06/2023] Open
Abstract
Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored. This article presents a comprehensive study of the degradation mechanism in mechanically exfoliated monochalcogenides in ambient conditions using Raman and photoluminescence spectroscopy supported by structural methods. A higher stability (up to three weeks) was observed for GaS. The most reactive were Se-containing monochalcogenides. Surface protrusions appeared after the ambient exposure of GeSe was detected by scanning electron microscopy. In addition, the degradation of GeS and GeSe flakes was observed in the operando experiment in transmission electron microscopy. Additionally, the amorphization of the material progressed from the flake edges. The reported results and conclusions on the degradation of LMs are useful to understand surface oxidation, air stability, and to fabricate stable devices with monochalcogenides. The results indicate that LMs are more challenging for exfoliation and optical studies than transition metal dichalcogenides such as MoS2, MoSe2, WS2, or WSe2.
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Affiliation(s)
- Daria Hlushchenko
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
| | - Anna Siudzinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Joanna Cybinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Malgorzata Guzik
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Alicja Bachmatiuk
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Robert Kudrawiec
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
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Xu L, Zhan G, Luo K, Lu F, Zhang S, Wu Z. Transition from Schottky to ohmic contacts in the C 31 and MoS 2 van der Waals heterostructure. Phys Chem Chem Phys 2023; 25:20128-20133. [PMID: 37462991 DOI: 10.1039/d3cp02357e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
The utilization of conventional metal contacts has restricted the industrial implementation of two-dimensional channel materials. To address this issue, we conducted first-principles calculations to investigate the interface properties of C31 and MoS2 contacts. An ohmic contact and a low van der Waals barrier were found in the C31/MoS2 heterostructure. Our findings provide a promising new contact metal material for two-dimensional nanodevices based on MoS2.
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Affiliation(s)
- Lijun Xu
- The Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100029, China
| | - Guohui Zhan
- The Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100029, China
| | - Kun Luo
- The Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100029, China
| | - Fei Lu
- School of Integrated Circuits, Southeast University, Nanjing 210094, China
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Zhenhua Wu
- The Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100029, China
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Li X, Yuan P, Li L, Liu T, Shen C, Jiang Y, Song X, Li J, Xia C. Promising ultra-short channel transistors based on OM 2S (M = Ga, In) monolayers for high performance and low power consumption. NANOSCALE 2022; 15:356-364. [PMID: 36503932 DOI: 10.1039/d2nr04840j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
It is hoped that two-dimensional (2D) semiconductors overcome the short channel effect and continue Moore's law. However, 2D material-based ultra-short channel devices still face the challenge of simultaneously achieving high-performance (HP) and low-power (LP) consumption. Here, we theoretically designed monolayer OM2S (M = Ga, In)-based metal-oxide-semiconductor field-effect transistors (MOSFETs), considering the gate length from 1 to 5 nm, doping concentration and underlap structure. We found that in HP (LP) applications, the on-state current exceeds 1000 (500) μA μm-1 under a 1 nm (2 nm) gate length, surpassing the needs of the International Technology Roadmap for Semiconductors (ITRS) in 2028. The subthreshold swing is close to the Boltzmann tyranny (60 mV dec-1) even as the gate length shrinks to 2 nm. The energy-delay product is two orders lower than 1.02 × 10-28 J s μm-1, indicating extraordinary high-speed manipulation and low-energy expending. Therefore, monolayer OM2S has great application in ultra-short scale devices with HP and LP consumption, and can be taken as a candidate to extend Moore's Law.
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Affiliation(s)
- Xueping Li
- College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, Henan 453007, China
- Department of physics, Henan Normal University, Xinxiang 453007, China.
| | - Peize Yuan
- College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, Henan 453007, China
| | - Lin Li
- Department of physics, Henan Normal University, Xinxiang 453007, China.
| | - Ting Liu
- Department of physics, Henan Normal University, Xinxiang 453007, China.
| | - Chenhai Shen
- Department of physics, Henan Normal University, Xinxiang 453007, China.
| | - Yurong Jiang
- Department of physics, Henan Normal University, Xinxiang 453007, China.
| | - Xiaohui Song
- Department of physics, Henan Normal University, Xinxiang 453007, China.
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
| | - Congxin Xia
- Department of physics, Henan Normal University, Xinxiang 453007, China.
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Hu X, Liu W, Yang J, Wang W, Sun L, Shi X, Hao Y, Zhang S, Zhou W. Tunneling transport of 2D anisotropic XC (X = P, As, Sb, Bi) with a direct band gap and high mobility: a DFT coupled with NEGF study. NANOSCALE 2022; 14:13608-13613. [PMID: 36070456 DOI: 10.1039/d2nr03578b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Direct bandgap and significant anisotropic properties are crucial and beneficial for nanoelectronic applications. In this work, through first-principles calculations, we investigate novel two-dimensional (2D) α-XC (X = P, As, Sb, Bi) materials, which possess a direct bandgap of 0.73 to 1.40 eV with remarkable anisotropic electronic properties. Intriguingly, 2D α-XC presents the highest electron mobility near 8 × 103 cm2 V-1 s-1 along the Γ-X direction. Moreover, the transfer characteristics of the 2D α-XC TFETs are thoroughly assessed through NEGF methods. AsC TFETs demonstrate an on-state current larger than 2.2 × 103 μA μm-1, which can satisfy the International Technology Roadmap for Semiconductors (ITRS) for high-performance requirements. In particular, the minimum value of subthreshold swing of devices is as low as 15 mV dec-1, indicating excellent device switching characteristics. The relevant calculation results show that 2D α-XC monolayers could be a promising candidate in next-generation high-performance device applications.
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Affiliation(s)
- Xuemin Hu
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Wenqiang Liu
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Jialin Yang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Wei Wang
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Luanhong Sun
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Xiaoqin Shi
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Shengli Zhang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Wenhan Zhou
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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Guo C, Wang C, Wang T, Liu Y. Gas adsorption effects of monolayer GeSe in terms of anisotropic transport properties. NANOTECHNOLOGY 2022; 33:425701. [PMID: 35817004 DOI: 10.1088/1361-6528/ac800f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Accepted: 07/11/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional layered semiconducting material germanium selenide (GeSe) has attracted significant attention due to its environmental friendship, anisotropic electronic structures, and strong air-stability. To evaluate the candidacy of monolayer GeSe as a potential gas sensing material, the adsorption characteristics of various small gas molecules on monolayer GeSe are comprehensively studied combining density functional theory calculations and non-equilibrium Green's function formalism. The charge transfer reaction between gas molecules and monolayer GeSe leads to the marked change of the carrier density, which further affects the anisotropic transport characteristics of monolayer GeSe. The calculated band structures andI-Vcurves reveal distinctive responses of monolayer GeSe to the different gas molecules, and higher sensitivity of the monolayer GeSe in presence of SO2, NH3, NO2gas molecules along the zigzag direction is obtained. These results suggest that monolayer GeSe along the zigzag direction has promising application in gas detector.
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Affiliation(s)
- Caixia Guo
- College of Electronic and Electric Engineering, Henan Normal University, Xinxiang 453007, People's Republic of China
- Henan Key Laboratory of Optoelectronic Sensing Integrated Application, Xinxiang 453007, People's Republic of China
| | - Chenghao Wang
- College of Electronic and Electric Engineering, Henan Normal University, Xinxiang 453007, People's Republic of China
- Henan Engineering Laboratory of Additive Intelligent Manufacturing, Xinxiang 453007, People's Republic of China
| | - Tianxing Wang
- School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Yufang Liu
- School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
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7
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Wu W, Li D, Xu Y, Zeng XC. Two-Dimensional GeC 2 with Tunable Electronic and Carrier Transport Properties and a High Current ON/OFF Ratio. J Phys Chem Lett 2021; 12:11488-11496. [PMID: 34793176 DOI: 10.1021/acs.jpclett.1c03477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this study, we present that 2D tetrahex-GeC2 materials possess novel electronic and carrier transport properties based on density functional theory computations combined with the nonequilibrium Green's function method. We show that under the 4% (-4%) in-plane expansion (compression) along the a-direction (b-direction) of the tetrahex-GeC2 monolayer, the bandgap can be enlarged to a desirable 1.26 eV (1.32 eV), close to that of silicon. The carrier transport properties of both the sub-10 nm tetrahex-GeC2 monolayer and the bilayer show strong anisotropy within the bias from -1 to 1 V. The current ON (a-direction)/OFF (b-direction) ratio amounts to 105 for the tetrahex-GeC2 monolayer. A striking negative differential conductance arises with the maximum Ipeak/Ivalley on the order of 104 under the 4% uniaxial expansion along the b-direction of the tetrahex-GeC2 monolayer. Overall, the 2D tetrahex-GeC2 monolayer and bilayer possess highly tunable electronic and carrier transport properties under uniaxial strain, which can be exploited for potential applications in nanoelectronics.
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Affiliation(s)
- Wenjun Wu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Dongze Li
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Xiao Cheng Zeng
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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Chang K, Villanova JWD, Ji JR, Das S, Küster F, Barraza-Lopez S, Sessi P, Parkin SSP. Vortex-Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102267. [PMID: 34216404 DOI: 10.1002/adma.202102267] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2021] [Revised: 04/20/2021] [Indexed: 06/13/2023]
Abstract
Heterostructures formed from interfaces between materials with complementary properties often display unconventional physics. Of especial interest are heterostructures formed with ferroelectric materials. These are mostly formed by combining thin layers in vertical stacks. Here the first in situ molecular beam epitaxial growth and scanning tunneling microscopy characterization of atomically sharp lateral heterostructures between a ferroelectric SnTe monolayer and a paraelectric PbTe monolayer are reported. The bias voltage dependence of the apparent heights of SnTe and PbTe monolayers, which are closely related to the type-II band alignment of the heterostructure, is investigated. Remarkably, it is discovered that the ferroelectric domains in the SnTe surrounding a PbTe core form either clockwise or counterclockwise vortex-oriented quadrant configurations. In addition, when there is a finite angle between the polarization and the interface, the perpendicular component of the polarization always points from SnTe to PbTe. Supported by first-principles calculation, the mechanism of vortex formation and preferred polarization direction is identified in the interaction between the polarization, the space charge, and the strain effect at the horizontal heterointerface. The studies bring the application of 2D group-IV monochalcogenides on in-plane ferroelectric heterostructures a step closer.
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Affiliation(s)
- Kai Chang
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - John W D Villanova
- Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Jing-Rong Ji
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
| | - Souvik Das
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
| | - Felix Küster
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
| | | | - Paolo Sessi
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
| | - Stuart S P Parkin
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
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Guo Y, Pan F, Zhao G, Ren Y, Yao B, Li H, Lu J. Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device. NANOSCALE 2020; 12:15443-15452. [PMID: 32662491 DOI: 10.1039/d0nr02170a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) black phosphorene (BP) field-effect transistors (FETs) show excellent device performance but suffer from serious instability under ambient conditions. Isoelectronic 2D germanium selenide (GeSe) shares many similar properties with 2D BP, such as high carrier mobility and anisotropy, but is stable under ambient conditions. Herein, we explore the quantum transport properties of sub-5 nm ML GeSe MOSFETs using first-principles quantum transport simulation. A p-type (zigzag-directed) device is superior to other types (n- and p-type armchair-directed and n-type zigzag-directed). The on-state current of p-type devices (zigzag-directed), even at a 1 nm gate-length, can fulfill the requirements of high-performance applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS, 2013 version). To the best of our knowledge, these ML GeSe MOSFETs have the smallest gate-length that can fulfill the ITRS HP on-state current requirements among reported 2D material FETs.
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Affiliation(s)
- Ying Guo
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, P. R. China. and School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, 710048, China.
| | - Feng Pan
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, P. R. China.
| | - Gaoyang Zhao
- School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, 710048, China.
| | - Yajie Ren
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, P. R. China.
| | - Binbin Yao
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, P. R. China.
| | - Hong Li
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China. and Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China and Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, P. R. China and Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, P. R. China
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Li H, Liang J, Xu P, Luo J, Liu F. Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors. RSC Adv 2020; 10:20801-20808. [PMID: 35517741 PMCID: PMC9054299 DOI: 10.1039/d0ra03279d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2020] [Accepted: 05/22/2020] [Indexed: 11/21/2022] Open
Abstract
The two-dimensional (2D) vertical van der Waals (vdW) stacked homojunction is an advantageous configuration for fast low-power tunneling field effect transistors (TFETs). We simulate the device performance of the sub-10 nm vertical SnSe homojunction TFETs with ab initio quantum transport calculations. The vertically stacked device configuration has an effect of decreasing leakage current when compared with its planar counterpart due to the interrupted carrier transport path by the broken connection. A subthreshold swing over four decades (SSave_4 dec) of 44.2–45.8 mV dec−1 and a drain current at SS = 60 mV dec−1 (I60) of 5–7 μA μm−1 are obtained for the optimal vertical SnSe homojunction TFET with Lg = 10 nm at a supply voltage of 0.5–0.74 V. In terms of the device's main figures of merit (i.e., on-state current, intrinsic delay time, and power delay product), the vertical SnSe TFETs and NCTFETs outperform the 2022 and 2028 targets of the International Technology Roadmap for Semiconductors requirements for low-power application (2013 version), respectively. The vertical SnSe homojunction TFETs and NCTFETs are potential candidates for fast low-power application.![]()
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Affiliation(s)
- Hong Li
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jiakun Liang
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Peipei Xu
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jing Luo
- Beijing Research Institute of Automation for Machinery Industry Beijing 100120 P. R. China
| | - Fengbin Liu
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
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11
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Xu P, Liang J, Li H, Liu F, Tie J, Jiao Z, Luo J, Lu J. Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors. RSC Adv 2020; 10:16071-16078. [PMID: 35493676 PMCID: PMC9052893 DOI: 10.1039/d0ra02265a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2020] [Accepted: 03/26/2020] [Indexed: 11/21/2022] Open
Abstract
Exploring the device performance limits is meaningful for guiding practical device fabrication. We propose archetype tunneling field effect transistors (TFETs) with negative capacitance (NC) and use the rigorous ab initio quantum transport simulation to explore the device performance limits of the TFETs based on monolayer (ML) GeSe and GeTe along with their NC counterparts. With the ferroelectric dielectric acting as a negative capacitance material, the device performances of both the ML GeSe and GeTe NCTFETs outperform their TFET counterparts, particularly for the on-state current (Ion). Ion of the optimal ML GeSe and GeTe TFETs fulfills the demands of the International Technology Roadmap for Semiconductors (ITRS 2015 version) for low power (LP) and high performance (HP) devices, at the “6/5” node range, while with the aid of 80 nm and 50 nm thickness of ferroelectric SrBi2Nb2O9, both their NC counterparts extend the fulfillments at the “4/3” node range. The ML GeSe and GeTe NCTFETs fulfill the ITRS low power and high performance devices, respectively, at the “4/3” node range.![]()
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Affiliation(s)
- Peipei Xu
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jiakun Liang
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Hong Li
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Fengbin Liu
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jun Tie
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Zhiwei Jiao
- College of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China
| | - Jing Luo
- Beijing Research Institute of Automation for Machinery Industry Beijing P. R. China
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University Beijing 100871 P. R. China .,Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
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