Enhanced resistive switching performance in yttrium-doped CH3NH3PbI3 perovskite devices

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

Hybrid halide perovskites are attractive candidates for resistive switching memories in neuromorphic computing applications due to their mixed ionic-electronic conductivity. Moreover, their exceptional optoelectronic characteristics make them effective as semiconductors in photovoltaics, opening perspectives for self-powered memory elements. These devices, however, remain unexploited, which is related to the variability in their switching characteristics, weak endurance, and retention, which limit their performance and practical use. To address this challenge, we applied low-dimensional perovskite capping layers onto 3D mixed halide perovskites using two perfluoroarene organic cations, namely (perfluorobenzyl)ammonium and (perfluoro-1,4-phenylene)dimethylammonium iodide, forming Ruddlesden-Popper and Dion-Jacobson 2D perovskite phases, respectively. The corresponding mixed-dimensional perovskite heterostructures were used to fabricate resistive switching memories based on perovskite solar cell architectures, showing that the devices based on perfluoroarene heterostructures exhibited enhanced performance and stability in inert and ambient air atmosphere. This opens perspectives for multidimensional perovskite materials in durable self-powered memory elements in the future.

Performance Improvement of Lead-Based Halide Perovskites through B-Site Ion-Doping Strategies

Owing to their excellent properties, lead halide perovskites have attracted extensive attention in the photoelectric field. Presently, the certified power conversion efficiency of perovskite solar cells has reached 25.7%, the specific detectivity of perovskite photodetectors has exceeded 1014 Jones, and the external quantum efficiency of perovskite-based light-emitting diode has exceeded 26%. However, their practical applications are limited by the inherent instability induced by the perovskite structure due to moisture, heat, and light. Therefore, one of the widely used strategies to address the issue is to replace partial ions of the perovskites with ions of smaller radii to shorten the bond length between halides and metal cations, improving the bond energy and enhancing the perovskite stability. Particularly, the B-site cation in the perovskite structure can affect the size of eight cubic octahedrons and their gap. However, the X-site can only affect four such voids. This review comprehensively summarizes the recent progress in B-site ion-doping strategies for lead halide perovskites and provides some perspectives for further performance improvements.

Enhanced Memristive Performance of Double Perovskite Cs2 AgBiBr6-x Clx Devices by Chloride Doping

Mixed halide perovskites are promising memristive materials because of their excellent electronic-ionic properties. In this work, lead-free Cs₂ AgBiBr_6-x Cl_x (x=0, 0.2, 0.4, 0.6, 0.8, 1.0) double perovskite films were fabricated using a one-step solution spin-coating method in air. Moreover, the ITO/Cs₂ AgBiBr_6-x Cl_x /Al sandwich-like devices are fabricated to investigate the memristive behaviors. The present memristors exhibit nonvolatile and bipolar resistive switching behaviors without electroforming process. Interestingly, as the chloride content increases, the ON/OFF ratio of the device increases from 10³ to 10⁴ , the average SET voltage and the RESET voltage decrease from -0.40 V to -0.21 V and from 1.55 V to 1.34 V, respectively. In addition, resistance states of devices can be maintained after 100 switching cycles and 10⁴  s of reading. This study provides new possibility for the development of low-power and environmentally friendly memristors.