Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Tunable multiple nonvolatile resistance states in a MnSe-based van der Waals multiferroic tunnel junction

Two-dimensional (2D) van der Waals (vdW) multiferroic tunnel junctions (MFTJs) composed of a ferromagnetic metal and a ferroelectric barrier have controllable thickness and clean interface and can realize the coexistence of tunneling magnetoresistance (TMR) and tunneling electroresistance (TER). Therefore, they have enormous potential application in nonvolatile multistate memories. Here, using first principles combined with non-equilibrium Green's function method, we have systematically investigated the spin-dependent transport properties of Fe3GeTe2/MnSe/Fe3GeTe2 vdW MFTJs with various numbers of barrier layers. By controlling the polarization orientation of the ferroelectric barrier MnSe and the magnetization alignment of the ferromagnetic electrodes Fe3GeTe2, the MnSe-based MFTJs exhibit four nonvolatile resistance states, with the TMR (TER) becoming higher and reaching a maximum of 1.4 × 106% (4114%) as the MnSe layers increase from a bilayer to a tetralayer. Using asymmetric Cu and Fe3GeTe2 as the electrodes, the TER can be further improved from 349% to 618%. Moreover, there is a perfect spin filtering effect in these MFTJs. This work demonstrates the potential applications of MnSe-based devices in multistate nonvolatile memories and spin filters, which will stimulate experimental studies on layer-controllable spintronic devices.

Large tunneling magnetoresistance in van der Waals magnetic tunnel junctions based on FeCl2 films with interlayer antiferromagnetic couplings

Antiferromagnets (AFMs) are some of the most promising candidates for next-generation magnetic memory technology owing to their advantages over conventional ferromagnets (FMs), such as zero stray field and THz-range magnetic resonance frequency. Motivated by the recent synthesis of FeCl₂ films with interlayer AFM and intralayer FM couplings, we investigated the magnetic properties of few-layer FeCl₂ and the spin-dependent transmissions of graphite/bilayer FeCl₂/graphite and Au/n-layer FeCl₂/Au magnetic tunnel junctions (MTJs) using first-principles calculations combined with the nonequilibrium Green's function. The interlayer AFM coupling of FeCl₂ is certified to be stable and independent of the stacking orders and relative displacement between layers. Furthermore, based on the Au electrode with better conductive performance than the graphite electrode and monolayer 1T-FeCl₂ with complete spin polarization, high Curie temperature and large magnetic anisotropic energy, a high tunnel magnetoresistance (TMR) ratio of 2.7 × 10³% is achieved in Au/bilayer FeCl₂/Au MTJs at zero bias and it increases with different layers of FeCl₂ (n = 2-10). These excellent spin transport properties of Au/n-layer FeCl₂/Au MTJs based on two-dimensional (2D) AFM barriers with out-of-plane magnetization directions suggest their great potential for application in high-reliability, high-speed and high-density spintronic devices.