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Reilly C, Hutchison A, Sitz GO. Survival of rotational alignment in H 2 scattering from Si(100). J Chem Phys 2021; 155:174705. [PMID: 34742218 DOI: 10.1063/5.0068518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
We report a state-prepared, state-resolved study of rotational scattering of a diatomic molecule from a solid surface. Specifically, H2 molecules with 80 meV kinetic energy are rotationally aligned in the j = 3 rotational state via stimulated Raman pumping and then scattered from a Si(100) surface at normal incidence. The rotational alignment of the scattered molecules is determined by measuring, for both the incident and scattered molecules, the ionization yield of a probe laser, tuned to selectively ionize molecules in the j = 3 rotation level, as the probe laser polarization is rotated. The measurement is performed for two initial rotational alignments: a "helicoptering" alignment with the bonds constrained to lie primarily parallel to the surface and a "cartwheeling" alignment with the bonds lying primarily normal to the surface. For both initial alignments, the modulation of the probe ionization yield with laser polarization for the scattered molecules is pronounced, although significantly weaker than the modulation measured for the incident molecules. This indicates a significant modification but not a complete elimination of the initial alignment. The modulation is found to be stronger for the scattered molecules originating in the cartwheeling alignment than for the helicoptering alignment. These results contribute toward an improved understanding of the role of rotational motion in molecule-surface dynamics.
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Affiliation(s)
- Christopher Reilly
- Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA
| | - Andrew Hutchison
- Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA
| | - Greg O Sitz
- Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA
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Affiliation(s)
- Helen Chadwick
- Laboratoire de Chimie Physique Moléculaire, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland;,
| | - Rainer D. Beck
- Laboratoire de Chimie Physique Moléculaire, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland;,
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Reaction Dynamics of Molecular Hydrogen on Silicon Surfaces: Importance of Lattice Degrees of Freedom. ACTA ACUST UNITED AC 2013. [DOI: 10.1007/978-3-642-32955-5_10] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/20/2023]
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4
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Kolasinski KW, Hartline JD, Kelly BT, Yadlovskiy J. Dynamics of porous silicon formation by etching in HF + V2O5solutions. Mol Phys 2010. [DOI: 10.1080/00268971003639258] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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5
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Chapter 16 Growth and Etching of Semiconductors. ACTA ACUST UNITED AC 2008. [DOI: 10.1016/s1573-4331(08)00016-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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6
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Shi J, Chuan Kang H, Tok ES, Zhang J. Evidence for hydrogen desorption through both interdimer and intradimer paths from Si(100)-(2 x 1). J Chem Phys 2007; 123:34701. [PMID: 16080749 DOI: 10.1063/1.1937392] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Despite intensive work there are still controversial issues about desorption and adsorption of hydrogen on Si(100)-(2 x 1). In particular, the relative importance of the various interdimer- and intradimer-desorption paths is not clear. Nanosecond-pulse-laser desorption data have been used to argue that the 4H interdimer path is important, while data from thermal-desorption time-of-flight measurements suggest a large translationally hot contribution which cannot arise from the 4H interdimer path. The observation of a translationally hot desorption fraction at low to medium coverage can be accounted for by including the 2H interdimer path in quantum dynamical calculations. In this paper we investigate this issue further and present evidence that supports the inclusion of the intradimer path. Specifically, our results show that the intradimer and 3H interdimer paths provide the major contributions to the translationally hot fraction in the desorbate. Our conclusions are based on density-functional calculations of hydrogen translational excitation, mean-field analysis of thermal-desorption experiments over a range of ramp rate, and Monte Carlo simulations of nanosecond-pulse-laser experiments.
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Affiliation(s)
- J Shi
- Department of Chemistry, National University of Singapore
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Doren DJ. Kinetics and Dynamics of Hydrogen Adsorption and Desorption on Silicon Surfaces. ADVANCES IN CHEMICAL PHYSICS 2007. [DOI: 10.1002/9780470141540.ch1] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/20/2023]
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8
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Niida T, Tsurumaki H, Namiki A. Desorption dynamics of deuterium molecules from the Si(100)-(3x1) dideuteride surface. J Chem Phys 2006; 124:024715. [PMID: 16422634 DOI: 10.1063/1.2141953] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
We measured polar angle (theta)-resolved time-of-flight spectra of D2 molecules desorbing from the Si(100)-(3x1) dideuteride surface. The desorbing D2 molecules exhibit a considerable translational heating with mean desorption kinetic energies of approximately 0.25 eV, which is mostly independent of the desorption angles for 0 degrees<or=theta<or=30 degrees. The observed desorption dynamics of deuterium was discussed along the principle of detailed balance to predict their adsorption dynamics onto the monohydride Si surface.
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Affiliation(s)
- T Niida
- Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
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Matsuno T, Niida T, Tsurumaki H, Namiki A. Coverage dependent desorption dynamics of deuterium on Si(100) surfaces: Interpretation with a diffusion-promoted desorption model. J Chem Phys 2005; 122:024702. [PMID: 15638609 DOI: 10.1063/1.1829994] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
We studied coverage dependence of time-of-flight (TOF) spectra of D2 molecules thermally desorbed from the D/Si(100) surface. The mean translational energies Et of desorbed D2 molecules were found to increase from 0.20+/-0.05 eV to 0.40+/-0.04 eV as the desorption coverage window was decreased from 1.0 ML> or =thetaD> or =0.9 ML to 0.2 ML> or =thetaD> or =0 ML, being consistent with the kinetics switch predicted in the interdimer mechanism. The measured TOF spectra were deconvoluted into 2H, 3H, and 4H components by a curve fitting method along the principle of detailed balance. As a result, it turned out that the desorption kinetics changes from the 4H to the 3H situation at high coverage above thetaD=0.9 ML, while the 2H desorption is dominant for a quite wide coverage region up to thetaD=0.8 ML. A dynamic desorption mechanism by which the desorption is promoted by D-atom diffusion to dangling bonds was proposed.
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Affiliation(s)
- T Matsuno
- Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
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Mui C, Bent SF, Musgrave CB. A Density Functional Theory Study on the Effect of Ge Alloying on Hydrogen Desorption from SiGe Alloy Surfaces. J Phys Chem B 2004; 108:6336-50. [DOI: 10.1021/jp037948a] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Collin Mui
- Department of Chemical Engineering, Stanford University, Stanford California 94305
| | - Stacey F. Bent
- Department of Chemical Engineering, Stanford University, Stanford California 94305
| | - Charles B. Musgrave
- Departments of Chemical Engineering and Materials Science and Engineering, Stanford University, Stanford California 94305
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Filippi C, Healy SB, Kratzer P, Pehlke E, Scheffler M. Quantum Monte Carlo calculations of H2 dissociation on Si(001). PHYSICAL REVIEW LETTERS 2002; 89:166102. [PMID: 12398737 DOI: 10.1103/physrevlett.89.166102] [Citation(s) in RCA: 40] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2002] [Indexed: 05/24/2023]
Abstract
The dissociative adsorption of H2 on the Si(001) surface is theoretically investigated for several reaction pathways using quantum Monte Carlo methods. Our reaction energies and barriers are at large variance with those obtained with commonly used approximate exchange-correlation density functionals. Our results for adsorption support recent experimental findings, while, for desorption, the calculations give barriers in excess of the presently accepted experimental value, pinpointing the role of coverage effects and desorption from steps.
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Affiliation(s)
- Claudia Filippi
- Instituut Lorentz, Universiteit Leiden, Niels Bohrweg 2, NL-2333 CA, The Netherlands
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Sagara T, Kuga T, Tanaka K, Shibataka T, Fujimoto T, Namiki A. Translational heating of D(2) molecules thermally desorbed from Si(100) and Ge(100) surfaces. PHYSICAL REVIEW LETTERS 2002; 89:086101. [PMID: 12190484 DOI: 10.1103/physrevlett.89.086101] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2002] [Indexed: 05/23/2023]
Abstract
The translational energies of D(2) molecules thermally desorbed from the Si(100) and Ge(100) surfaces under a heating rate of 6 K/s have been measured. In contrast to the previous laser desorption study, results show a considerable translational heating; the observed translational temperature is about 3 times higher than the desorption temperature for both surfaces. This fact indicates that energy barriers for adsorption are present even in the desorption pathway. Detailed balance is applicable to the adsorption and desorption dynamics of hydrogen on the Si(100) surface.
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Affiliation(s)
- T Sagara
- Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
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13
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Okamoto Y. Hybrid Density-Functional Calculations of the Reactions of a H2 Molecule on C, Si, and Ge(001) Surfaces. J Phys Chem B 2001. [DOI: 10.1021/jp010996f] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Yasuharu Okamoto
- Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305-8501, Japan
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14
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Molinari E, Tomellini M. Non-equilibrium vibrational kinetics and `hot atom' models in the recombination of hydrogen atoms on surfaces. Chem Phys 2001. [DOI: 10.1016/s0301-0104(01)00388-3] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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15
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Steckel JA, Phung T, Jordan KD, Nachtigall P. Concerted Use of Slab and Cluster Models in an ab Initio Study of Hydrogen Desorption from the Si(100) Surface. J Phys Chem B 2001. [DOI: 10.1021/jp0035176] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- J. A. Steckel
- Department of Chemistry and Center for Molecular and Materials Simulations, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
| | - T. Phung
- Department of Chemistry and Center for Molecular and Materials Simulations, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
| | - K. D. Jordan
- Department of Chemistry and Center for Molecular and Materials Simulations, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
| | - P. Nachtigall
- J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic and Center for Complex Molecular Systems and Biomolecules, Dolejškova 3, 182 23 Prague 8, Czech Republic
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16
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Buehler EJ, Boland JJ. Dimer preparation that mimics the transition state for the adsorption of H2 on the Si(100)-2 x 1 surface. Science 2000; 290:506-9. [PMID: 11039929 DOI: 10.1126/science.290.5491.506] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
A chemically induced dimer configuration was prepared on the silicon (Si) (100) surface and was characterized by scanning tunneling microscopy (STM) and spectroscopy (STS). These prepared dimers, which are essentially untilted and differ both electronically and structurally from the dynamically tilting dimers normally found on this surface, are more reactive than normal dimers. For molecular hydrogen (H2) adsorption, the enhancement is about 10(9) at room temperature. There is no appreciable barrier for the H2 reaction at prepared sites, indicating the prepared configuration closely approximates the actual dimer structure in the transition state. This previously unknown ability to prepare specific surface configurations has important implications for understanding and controlling reaction dynamics on semiconductor surfaces.
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Affiliation(s)
- E J Buehler
- Venable and Kenan Laboratories, Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, USA
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17
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Zimmermann FM, Pan X. Interaction of H2 with Si(001)-(2 x 1): solution of the barrier puzzle. PHYSICAL REVIEW LETTERS 2000; 85:618-621. [PMID: 10991354 DOI: 10.1103/physrevlett.85.618] [Citation(s) in RCA: 26] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2000] [Indexed: 05/23/2023]
Abstract
The sticking probability of H2 on Si(001) is immeasurably small at room temperature, indicating the presence of a large energy barrier to adsorption. Surprisingly, the final state energy distributions of H2 molecules desorbing from Si(001) show no signs of having traversed such a barrier, in apparent contradiction with microscopic reversibility. Here we report experimental and theoretical evidence resolving this long-standing puzzle. Adsorption and desorption proceeding along two distinct, microscopically reversible pathways can explain all observations.
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Affiliation(s)
- F M Zimmermann
- Department of Physics and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, USA
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18
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Flowers MC, Jonathan NBH, Morris A, Wright S. The desorption of molecular hydrogen from Si(100)-2×1 and Si(111)-7×7 surfaces at low coverages. J Chem Phys 1998. [DOI: 10.1063/1.475733] [Citation(s) in RCA: 39] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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19
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Kratzer P. Reaction dynamics of atomic hydrogen with the hydrogenated Si(001) (2×1) surface. J Chem Phys 1997. [DOI: 10.1063/1.473672] [Citation(s) in RCA: 80] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
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Radeke MR, Carter EA. A dynamically and kinetically consistent mechanism for H2 adsorption/desorption from Si(100)-2 x 1. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11803-11817. [PMID: 9984972 DOI: 10.1103/physrevb.54.11803] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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22
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Hamers RJ, Wang Y. Atomically-Resolved Studies of the Chemistry and Bonding at Silicon Surfaces. Chem Rev 1996; 96:1261-1290. [PMID: 11848789 DOI: 10.1021/cr950213k] [Citation(s) in RCA: 80] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Robert J. Hamers
- Department of Chemistry, University of Wisconsin, 1101 University Avenue, Madison, Wisconsin 53706
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23
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Bratu P, Kompa K, Höfer U. Optical second-harmonic investigations of H2 and D2 adsorption on Si (100) 2 × 1: the surface temperature dependence of the sticking coefficient. Chem Phys Lett 1996. [DOI: 10.1016/0009-2614(96)00085-1] [Citation(s) in RCA: 64] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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24
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Luntz AC, Kratzer P. D2 dissociative adsorption on and associative desorption from Si(100): Dynamic consequences of an ab initio potential energy surface. J Chem Phys 1996. [DOI: 10.1063/1.471074] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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25
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Lewis LB, Segall J, Janda KC. Recombinative desorption of hydrogen from the Ge(100)–(2×1) surface: A laser‐induced desorption study. J Chem Phys 1995. [DOI: 10.1063/1.469117] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Bratu P, Höfer U. Phonon-assisted sticking of molecular hydrogen on Si(111)-(7 x 7). PHYSICAL REVIEW LETTERS 1995; 74:1625-1628. [PMID: 10059076 DOI: 10.1103/physrevlett.74.1625] [Citation(s) in RCA: 28] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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28
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Kratzer P, Hammer B, Nørskov J. The coupling between adsorption dynamics and the surface structure: H2 on Si(100). Chem Phys Lett 1994. [DOI: 10.1016/0009-2614(94)01100-1] [Citation(s) in RCA: 63] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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29
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Kolasinski KW, Nessler W, Bornscheuer K, Hasselbrink E. Beam investigations of D2 adsorption on Si(100): On the importance of lattice excitations in the reaction dynamics. J Chem Phys 1994. [DOI: 10.1063/1.468419] [Citation(s) in RCA: 55] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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30
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D’Evelyn MP, Yang YL, Cohen SM. Adsorption, desorption, and decomposition of HCl and HBr on Ge(100): Competitive pairing and near‐first‐order desorption kinetics. J Chem Phys 1994. [DOI: 10.1063/1.467686] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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31
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Brenig W, Gross A, Russ R. Detailed balance and phonon assisted sticking in adsorption and desorption of H2/Si. ACTA ACUST UNITED AC 1994. [DOI: 10.1007/bf01313289] [Citation(s) in RCA: 53] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Wu CJ, Ionova IV, Carter EA. First-principles-derived rate constants for H adatom surface diffusion on Si(100)-2 x 1. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:13488-13500. [PMID: 10010285 DOI: 10.1103/physrevb.49.13488] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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33
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Kolasinski KW, Nessler W, Hasselbrink E. Hydrogen adsorption on and desorption from Si: Considerations on the applicability of detailed balance. PHYSICAL REVIEW LETTERS 1994; 72:1356-1359. [PMID: 10056692 DOI: 10.1103/physrevlett.72.1356] [Citation(s) in RCA: 43] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Mochizuki Y, Takada T, Sasaoka C, Usui A, Miyoshi E, Sakai Y. Theoretical study of As2 desorption from the Ga dangling-bond site. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:4658-4667. [PMID: 10011392 DOI: 10.1103/physrevb.49.4658] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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35
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Flowers MC, Jonathan NBH, Liu Y, Morris A. Temperature programmed desorption of molecular hydrogen from a Si(100)‐2×1 surface: Theory and experiment. J Chem Phys 1993. [DOI: 10.1063/1.465423] [Citation(s) in RCA: 154] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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36
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Michelsen HA, Rettner CT, Auerbach DJ, Zare RN. Effect of rotation on the translational and vibrational energy dependence of the dissociative adsorption of D2on Cu(111). J Chem Phys 1993. [DOI: 10.1063/1.464535] [Citation(s) in RCA: 236] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Čadež I, Schermann C, Landau M, Pichou F, Popović D, Hall RI. Hydrogen recombination on metals: vibrational excitation of desorbed molecules. ACTA ACUST UNITED AC 1993. [DOI: 10.1007/bf01429184] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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38
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Numerically stable solution of coupled channel equations: The local reflection matrix. ACTA ACUST UNITED AC 1993. [DOI: 10.1007/bf01308812] [Citation(s) in RCA: 73] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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39
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Park Y, Kim J, Lee J. Angular distribution of D2 in thermal desorption from Si(100). J Chem Phys 1993. [DOI: 10.1063/1.464623] [Citation(s) in RCA: 32] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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40
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Shane SF, Kolasinski KW, Zare RN. Internal‐state distributions of H2 desorbed from mono‐ and dihydride species on Si(100). J Chem Phys 1992. [DOI: 10.1063/1.462952] [Citation(s) in RCA: 53] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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41
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Shane SF, Kolasinski KW, Zare RN. Recombinative desorption of H2 on Si(100)‐(2×1) and Si(111)‐(7×7): Comparison of internal state distributions. J Chem Phys 1992. [DOI: 10.1063/1.463228] [Citation(s) in RCA: 76] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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42
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Sheng J, Zhang JZH. Theoretical model for the dynamics of hydrogen recombination on the Si(100)‐(2×1) surface. J Chem Phys 1992. [DOI: 10.1063/1.463555] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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