Boron-oxygen complex yields n-type surface layer in semiconducting diamond

Solving the Asymmetric Doping for Wide-Gap Semiconductors by Host Functionalization: Quantum Engineering Strategy

Asymmetric doping of wide-gap semiconductors has long been a major challenge, hindering their wider applications. Despite numerous attempts to address this issue through engineering doping levels, the results were still inconclusive. In this work, we propose a quantum engineering strategy based on the state-of-the-art spin-polarized HSE06 hybrid functional method. The local band offset between the host and quantum structures can considerably compensate for the large carrier activation energy (Ea). We chose the system of the AlN host embedded by GaN quantum dots as an example to validate the feasibility of this strategy. The Ea of Si (n-type) and Be (p-type) dopants can be reduced from 222 and 404 meV to negative values and 2 meV, respectively. Therefore, electron and hole density can be increased to more than 1019 and 1020 cm-3, respectively. We also tested potential dopants (C and Ge for the n-type, Mg and Ca for the p-type), and the technique is equally effective. This mechanism can also be used to understand the experimental observations of the superlattice doping strategy. Overall, our study demonstrates that the quantum engineering strategy provides a potential solution to overcome the asymmetric doping problem for universal wide-gap semiconductors and supports a feasible pathway for more efficient devices in the future.

Ultrathin Boron Growth onto Nanodiamond Surfaces via Electrophilic Boron Precursors

Diamond as a templating substrate is largely unexplored, and the unique properties of diamond, including its large bandgap, thermal conductance, and lack of cytotoxicity, makes it versatile in emergent technologies in medicine and quantum sensing. Surface termination of an inert diamond substrate and its chemical reactivity are key in generating new bonds for nucleation and growth of an overlayer material. Oxidized high-pressure high temperature (HPHT) nanodiamonds (NDs) are largely terminated by alcohols that act as nucleophiles to initiate covalent bond formation when an electrophilic reactant is available. In this work, we demonstrate a templated synthesis of ultrathin boron on ND surfaces using trigonal boron compounds. Boron trichloride (BCl3), boron tribromide (BBr3), and borane (BH3) were found to react with ND substrates at room temperature in inert conditions. BBr3 and BCl3 were highly reactive with the diamond surface, and sheet-like structures were produced and verified with electron microscopy. Surface-sensitive spectroscopies were used to probe the molecular and atomic structure of the ND constructs' surface, and quantification showed the boron shell was less than 1 nm thick after 1-24 h reactions. Observation of the reaction supports a self-terminating mechanism, similar to atomic layer deposition growth, and is likely due to the quenching of alcohols on the diamond surface. X-ray absorption spectroscopy revealed that boron-termination generated midgap electronic states that were originally predicted by density functional theory (DFT) several years ago. DFT also predicted a negative electron surface, which has yet to be confirmed experimentally here. The boron-diamond nanostructures were found to aggregate in dichloromethane and were dispersed in various solvents and characterized with dynamic light scattering for future cell imaging or cancer therapy applications using boron neutron capture therapy (BNCT). The unique templating mechanism based on nucleophilic alcohols and electrophilic trigonal precursors allows for covalent bond formation and will be of interest to researchers using diamond for quantum sensing, additive manufacturing, BNCT, and potentially as an electron emitter.

Centimeter-sized diamond composites with high electrical conductivity and hardness

Achieving high-performance materials with superior mechanical properties and electrical conductivity, especially in large-sized bulk forms, has always been the goal. However, it remains a grand challenge due to the inherent trade-off between these properties. Herein, by employing nanodiamonds as precursors, centimeter-sized diamond/graphene composites were synthesized under moderate pressure and temperature conditions (12 GPa and 1,300 to 1,500 °C), and the composites consisted of ultrafine diamond grains and few-layer graphene domains interconnected through covalently bonded interfaces. The composites exhibit a remarkable electrical conductivity of 2.0 × 104 S m-1 at room temperature, a Vickers hardness of up to ~55.8 GPa, and a toughness of 10.8 to 19.8 MPa m1/2. Theoretical calculations indicate that the transformation energy barrier for the graphitization of diamond surface is lower than that for diamond growth directly from conventional sp2 carbon materials, allowing the synthesis of such diamond composites under mild conditions. The above results pave the way for realizing large-sized diamond-based materials with ultrahigh electrical conductivity and superior mechanical properties simultaneously under moderate synthesis conditions, which will facilitate their large-scale applications in a variety of fields.

Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate

The high-concentration N doping of diamond film is still a challenge since nitrogen is limited during diamond growth. In this work, a novel method combined with the thermal decomposition of silicon nitride was proposed to form the activated N and Si components in the reactor gas that surrounded the substrate, with which the high-concentration N and Si doping of diamond film was performed. Meanwhile, graphene oxide (GO) particles were also employed as an adsorbent to further increase the concentration of the N element in diamond film by capturing the more decomposed N components. All the as-deposited diamond films were characterized by scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. For the pure diamond film with a growth time of 0.5 h, the N and Si concentrations were 20.78 and 41.21 at%, respectively. For the GO-diamond film, they reached 47.47 and 21.66 at%, which set a new record for super high-concentration N doping of diamond film. Hence, thermal decomposition for the substrate can be regarded as a potential and alternative method to deposit the chemical vapor deposition (CVD) diamond film with high-concentration N, which be favorable for the widespread application of diamond in the electric field.

Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

Accurate determination of the effective doping range within diamond thin films is important for fine-tuning of electrical conductivity. Nevertheless, it is not easily attainable by the commonly adopted techniques. In this work, pulsed RF glow discharge optical emission spectrometry (GD-OES) combined with ultrafast sputtering (UFS) is applied for the first time to acquire elemental depth profiles of intrinsic diamond coatings and boron content bulk distribution in films. The GD-OES practical advances presented here enabled quick elemental profiling with noteworthy depth resolution and determination of the film interfaces. The erosion rates and layer thicknesses were measured using differential interferometric profiling (DIP), demonstrating a close correlation between the coating thickness and the carbon/hydrogen gas ratio. Moreover, DIP and the adopted semiquantification methodology revealed a nonhomogeneous bulk distribution of boron within the diamond crystalline structure, i.e., boron doping is both substitutional and interstitial within the diamond framework. DIP measurements also showed that effective boron doping is not linearly correlated to the increasing content introduced into the diamond coating. This is a finding well supported by X-ray diffraction (XRD) Rietveld refinement and X-ray photoelectron spectroscopy (XPS). This work demonstrates the advantage of applying advanced GD-OES operation modes due to its ease of use, affordability, accuracy, and high-speed depth profile analysis capability.

Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering

Amorphous hydrogenated boron carbide films were deposited on silicon and glass substrates using radio frequency sputtering. The substrate temperature was varied from room temperature to 300 °C. The substrate temperature during deposition was found to have significant effects on the electrical and optical properties of the deposited films. X-ray photoelectron spectroscopy (XPS) revealed an increase in sp2-bonded carbon in the films with increasing substrate temperature. Reflection electron energy loss spectroscopy (REELS) was performed in order to detect the presence of hydrogen in the films. Metal-insulator-metal (MIM) structure was developed using Al and hydrogenated boron carbide to measure dielectric value and resistivity. Deposited films exhibited lower dielectric values than pure boron carbide films. With higher substrate deposition temperature, a decreasing trend in dielectric value and resistivity of the films was observed. For different substrate temperatures, the dielectric value of films ranged from 6.5–3.5, and optical bandgap values were between 2.25–2.6 eV.

Ultrananocrystalline Diamond Nanowires: Fabrication, Characterization, and Sensor Applications

The aim of this review is to provide a survey of the recent advances and the main remaining challenges related to the ultrananocrystalline diamond (UNCD) nanowires and other nanostructures which exhibit excellent capability as the core components for many diverse novel sensing devices, due to the unique material properties and geometry advantages. The boron or nitrogen doping introduced in the gas phase during deposition promotes p-type or n-type conductivity. With the establishment of the UNCD nanofabrication techniques, more and more nanostructure-based devices are being explored in measuring basic physical and chemical parameters via classic and quantum methods, as exemplified by gas sensors, ultraviolet photodetectors, piezoresistance effect-based devices, biological applications and biosensors, and nitrogen-vacancy color center-based magnetic field quantum sensors. Highlighted finally are some of the remaining challenges and the future outlook in this area.

Effect of Ni2O3 on diamond crystal growth in an Fe–Ni–C system under high temperature and high pressure

In this paper, the oxygen-containing diamond large single crystals were successfully synthesized by adding Ni₂O₃ to the Fe–Ni–C system under HPHT. The oxygen affects the P–T conditions for diamond synthesis, and morphology of diamond.

Enhanced strength of nano-polycrystalline diamond by introducing boron carbide interlayers at the grain boundaries

Polycrystalline diamond with high mechanical properties and excellent thermal stability plays an important role in industry and materials science. However, the increased inherent brittle strength with the increase of hardness has severely limited its further widespread application. In this work, we produced well-sintered nano-polycrystalline (np) diamond by directly sintering fine diamond powders with the boron carbide (B₄C) additive at high pressure and high temperatures. The highest hardness value of up to ∼90 GPa was observed in the np-diamond (consisting of fine grains with a size of 16 nm) by adding 5 wt% B₄C at 18 GPa and 2237 K. Moreover, our results reveal that the produced samples have shown noticeably enhanced strength and toughness (18.37 MPa m^0.5) with the assistance of the soft phase at the grain boundaries, higher than that of the hardest known nano-twined diamond by ∼24% and a little greater than that of the toughest CVD diamond (18 MPa m^0.5). This study offers a novel functional approach in improving and controlling the hardness and stiffness of polycrystalline diamond.

Prediction of a novel robust superconducting state in TaS2 under high pressure

A novel superconducting I4/mmm phase has been predicted in TaS₂ under high pressure, illustrating an unusual superconductor–metal–superconductor transition.

High pressure: a feasible tool for the synthesis of unprecedented inorganic compounds

After a simple classification of inorganic materials synthesized at high-temperature and high-pressure, this tutorial reviews the important research results in the field of high-temperature and high-pressure inorganic synthesis in the past 5 years.

Nanoplasmonic 1D Diamond UV Photodetectors with High Performance

Diamond nanowires have recently drawn substantial attention because of their unique physical and chemical properties for electrochemical sensors, optoelectronics, and nanophotonics applications. However, diamond nanowire-based ultraviolet photodetectors have not been reported because of the challenges involved in synthesizing crystalline diamond nanowires with controllable morphologies and, more fundamentally, the material's high carrier concentration with low mobilities that limits the obtainable photoresponsivity. The synergetic integration of ultrananocrystalline diamond (UNCD) nanowires with nanoplasmonic enhancement by noble metal nanoparticles is a very promising approach to overcome these shortcomings. Here we report the fabrication of boron-doped ultrananocrystalline diamond nanowires functionalized with the platinum nanoparticles to form self-powered ultraviolet photodetectors that exhibit an ultrahigh photoresponsivity of 388 Amp/Watt at 300 nm wavelength, a fast response time around 20 ms, and a good UV/visible rejection ratio of about 5 orders of magnitude under zero-bias condition.