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For: Holmén G, Burén A, Högberg P. Radiation damage in Ge produced and removed by energetic Ge ions. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337577508239477] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Number Cited by Other Article(s)
1
Svensson BG, Jagadish C, Williams JS. Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence. PHYSICAL REVIEW LETTERS 1993;71:1860-1863. [PMID: 10054518 DOI: 10.1103/physrevlett.71.1860] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
2
Hasselkamp D. Kinetic electron emission from solid surfaces under ion bombardment. PARTICLE INDUCED ELECTRON EMISSION II 1992. [DOI: 10.1007/bfb0038298] [Citation(s) in RCA: 56] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
3
Allen CW, Smith DA. In situ study of effects of ion irradiation on solid-state crystallization of cobalt disilicide thin films. Ultramicroscopy 1991. [DOI: 10.1016/0304-3991(91)90201-g] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
4
Ion-beam-induced epitaxial crystallization and amorphization in silicon. ACTA ACUST UNITED AC 1990. [DOI: 10.1016/0920-2307(90)90003-l] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
5
Priolo F, Rimini E. Ion-beam-induced epitaxial crystallization and amorphization in silicon. ACTA ACUST UNITED AC 1990. [DOI: 10.1016/0920-2307(90)90001-j] [Citation(s) in RCA: 189] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
6
Linnros J, Holmén G, Svensson B. Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition. PHYSICAL REVIEW. B, CONDENSED MATTER 1985;32:2770-2777. [PMID: 9937381 DOI: 10.1103/physrevb.32.2770] [Citation(s) in RCA: 86] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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