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For: Skolnick MS, Humphreys RG, Tapster PR, Cockayne B, MacEwan WR. Electrical properties of cobalt-doped InP. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/16/36/015] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Number Cited by Other Article(s)
1
Clerjaud B. Transition-metal impurities in III-V compounds. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/18/19/005] [Citation(s) in RCA: 236] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
2
Khowash PK, Khan DC, Singh VA. Theoretical study of the electronic states of substitutional transition-metal impurities in InP. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/18/33/008] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
3
Dadgar A, Ammerlahn D, Näser A, Heitz R, Kuttler M, Bimberg D, Baber N, Hyeon JY, Schumann H. Deep-level transient-spectroscopy study of rhodium in indium phosphide. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:7190-7196. [PMID: 9982166 DOI: 10.1103/physrevb.53.7190] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
4
Khowash PK, Ellis DE. Electronic structure due to hydrogen and vanadium as substitutional impurities in InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;37:2973-2978. [PMID: 9944876 DOI: 10.1103/physrevb.37.2973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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