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Yuan JH, Chen YB, Dou SQ, Wei B, Cui HQ, Song MX, Yang XK. Pure voltage-driven spintronic neuron based on stochastic magnetization switching behaviour. NANOTECHNOLOGY 2022; 33:155201. [PMID: 34952533 DOI: 10.1088/1361-6528/ac4662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2021] [Accepted: 12/23/2021] [Indexed: 06/14/2023]
Abstract
Voltage-driven stochastic magnetization switching in a nanomagnet has attracted more attention recently with its superiority in achieving energy-efficient artificial neuron. Here, a novel pure voltage-driven scheme with ∼27.66 aJ energy dissipation is proposed, which could rotate magnetization vector randomly using only a pair of electrodes covered on the multiferroic nanomagnet. Results show that the probability of 180° magnetization switching is examined as a sigmoid-like function of the voltage pulse width and magnitude, which can be utilized as the activation function of designed neuron. Considering the size errors of designed neuron in fabrication, it's found that reasonable thickness and width variations cause little effect on recognition accuracy for MNIST hand-written dataset. In other words, the designed pure voltage-driven spintronic neuron could tolerate size errors. These results open a new way toward the realization of artificial neural network with low power consumption and high reliability.
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Affiliation(s)
- Jia-Hui Yuan
- Fundamentals Department, Air Force Engineering University, Xi'an 710051, People's Republic of China
| | - Ya-Bo Chen
- College of Computer, National University of Defense Technology, Changsha 410005, People's Republic of China
| | - Shu-Qing Dou
- Fundamentals Department, Air Force Engineering University, Xi'an 710051, People's Republic of China
| | - Bo Wei
- Fundamentals Department, Air Force Engineering University, Xi'an 710051, People's Republic of China
| | - Huan-Qing Cui
- Fundamentals Department, Air Force Engineering University, Xi'an 710051, People's Republic of China
| | - Ming-Xu Song
- Fundamentals Department, Air Force Engineering University, Xi'an 710051, People's Republic of China
| | - Xiao-Kuo Yang
- Fundamentals Department, Air Force Engineering University, Xi'an 710051, People's Republic of China
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Rana B, Mondal AK, Bandyopadhyay S, Barman A. Applications of nanomagnets as dynamical systems: I. NANOTECHNOLOGY 2021; 33:062007. [PMID: 34633310 DOI: 10.1088/1361-6528/ac2e75] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Accepted: 10/11/2021] [Indexed: 06/13/2023]
Abstract
When magnets are fashioned into nanoscale elements, they exhibit a wide variety of phenomena replete with rich physics and the lure of tantalizing applications. In this topical review, we discuss some of these phenomena, especially those that have come to light recently, and highlight their potential applications. We emphasize what drives a phenomenon, what undergirds the dynamics of the system that exhibits the phenomenon, how the dynamics can be manipulated, and what specific features can be harnessed for technological advances. For the sake of balance, we point out both advantages and shortcomings of nanomagnet based devices and systems predicated on the phenomena we discuss. Where possible, we chart out paths for future investigations that can shed new light on an intriguing phenomenon and/or facilitate both traditional and non-traditional applications.
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Affiliation(s)
- Bivas Rana
- Institute of Spintronics and Quantum Information, Faculty of Physics, Adam Mickiewicz University in Poznań, Uniwersytetu Poznanskiego 2, Poznań 61-614, Poland
- Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan
| | - Amrit Kumar Mondal
- Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 106, India
| | - Supriyo Bandyopadhyay
- Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, 23284, United States of America
| | - Anjan Barman
- Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 106, India
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Li ZX, Geng XY, Wang J, Zhuge F. Emerging Artificial Neuron Devices for Probabilistic Computing. Front Neurosci 2021; 15:717947. [PMID: 34421528 PMCID: PMC8377243 DOI: 10.3389/fnins.2021.717947] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Accepted: 07/19/2021] [Indexed: 11/13/2022] Open
Abstract
In recent decades, artificial intelligence has been successively employed in the fields of finance, commerce, and other industries. However, imitating high-level brain functions, such as imagination and inference, pose several challenges as they are relevant to a particular type of noise in a biological neuron network. Probabilistic computing algorithms based on restricted Boltzmann machine and Bayesian inference that use silicon electronics have progressed significantly in terms of mimicking probabilistic inference. However, the quasi-random noise generated from additional circuits or algorithms presents a major challenge for silicon electronics to realize the true stochasticity of biological neuron systems. Artificial neurons based on emerging devices, such as memristors and ferroelectric field-effect transistors with inherent stochasticity can produce uncertain non-linear output spikes, which may be the key to make machine learning closer to the human brain. In this article, we present a comprehensive review of the recent advances in the emerging stochastic artificial neurons (SANs) in terms of probabilistic computing. We briefly introduce the biological neurons, neuron models, and silicon neurons before presenting the detailed working mechanisms of various SANs. Finally, the merits and demerits of silicon-based and emerging neurons are discussed, and the outlook for SANs is presented.
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Affiliation(s)
- Zong-xiao Li
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xiao-ying Geng
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, China
| | - Jingrui Wang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo, China
| | - Fei Zhuge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
- Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai, China
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Challab N, Faurie D, Haboussi M, Adeyeye AO, Zighem F. Differentiated Strain-Control of Localized Magnetic Modes in Antidot Arrays. ACS APPLIED MATERIALS & INTERFACES 2021; 13:29906-29915. [PMID: 34152735 DOI: 10.1021/acsami.1c05582] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The control of localized magnetic modes has been obtained in Ni60Fe40 square lattice (600 nm) antidot arrays. This has been performed by tailoring the magnetoelastic field at the scale of the antidot primitive cell. The corresponding heterogeneous strain field distributions have been generated by a PZT substrate and enhanced by the incorporation of a supporting compliant layer. It has been highlighted by a differentiated variation of magnetic energy directly due to the local magnetoelastic field felt by each magnetic mode, probed by ferromagnetic resonance spectroscopy. A modeling, involving micromagnetic simulations (to locate the magnetic modes), full-field simulations (to evaluate the strain field distributions), and an analytical model generally dedicated to continuous film that we have extended to those magnetic modes, shows a good agreement with the experimental data. This approach is very promising to develop multichannel systems with simultaneous and differentiated controlled frequencies in magnetic devices.
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Affiliation(s)
- Nabil Challab
- Universite Sorbonne Paris Nord, LSPM-CNRS UPR3407, Villetaneuse 93430, France
| | - Damien Faurie
- Universite Sorbonne Paris Nord, LSPM-CNRS UPR3407, Villetaneuse 93430, France
| | - Mohamed Haboussi
- Universite Sorbonne Paris Nord, LSPM-CNRS UPR3407, Villetaneuse 93430, France
| | - Adekunle O Adeyeye
- Information Storage Materials Laboratory Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
- Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
| | - Fatih Zighem
- Universite Sorbonne Paris Nord, LSPM-CNRS UPR3407, Villetaneuse 93430, France
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Keshtan MAM, Esmaeilzadeh M. Tight-binding Hamiltonian considering up to the third nearest neighbours for trans polyacetylene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:285401. [PMID: 32155603 DOI: 10.1088/1361-648x/ab7e55] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Utilizing the linear combination of atomic orbitals in the Slater-Koster approach in combination with the density functional theory band structure data, a new tight-binding Hamiltonian up to the third nearest neighbours for the dimerized trans polyacetylene is proposed. The effects of strain are also considered in the Hamiltonian by varying the distance between two successive CH groups along the molecular symmetry axis. Using this new Hamiltonian and exploiting the Green's function method in the framework of the Landauer-Büttiker formalism, the electronic transport properties in a trans polyacetylene chain in the presence and absence of strain are studied. It is shown that at a peculiar value of compression strain, the electron conductance shifts 0.27 eV in energy which is an exploitable magnitude for straintronic applications of the trans polyacetylene specially as strain sensors and strain switches.
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Affiliation(s)
- M Ali M Keshtan
- Department of Physics, Iran University of Science and Technology, Narmak, Tehran 16844, Iran
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D'Souza N, Biswas A, Ahmad H, Fashami MS, Al-Rashid MM, Sampath V, Bhattacharya D, Abeed MA, Atulasimha J, Bandyopadhyay S. Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies. NANOTECHNOLOGY 2018; 29:442001. [PMID: 30052200 DOI: 10.1088/1361-6528/aad65d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate 'switches' that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ∼1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is 'non-volatile', so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets, with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches-a field known as 'straintronics'. It also outlines key challenges in straintronics.
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Affiliation(s)
- Noel D'Souza
- Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond VA 23284, United States of America
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