Hexagonal boron nitride: a promising substrate for graphene with high heat dissipation

Thermal Rectification Modulation of Parallel Multiple Carbon/Boron Nitride Heteronanotubes

Thermal rectification (TR) efficiency has always been an important concern for thermal rectifiers. However, in practical terms, the amount of heat conduction is equally not negligible. To get high values on both of them, the carbon nanotube arrays with high thermal conductivity and large heat conduction areas were considered, along with carbon/boron nitride heteronanotubes (CBNNTs) with excellent TR property. In our work, multiple CBNNT models are constructed, and the TR ratio under different conditions is investigated using nonequilibrium molecular dynamics, with double CBNNTs (D-CBNNTs) aligned in parallel as the main analytical object. It is shown that weakening the intertube coupling is an available way to enhance the TR ratio, and adjusting the heteronanotube length and spacing can also effectively regulate the TR. In the process of changing the coupling coefficient, we analyzed both phonon changes and atomic vibrations and got a good correspondence, and the BN region is more variable in D-CBNNTs. In addition, the covariation of phonon localization and intertube phonon exchange with the coupling coefficient results in an invariant backward heat flux in the D-CBNNT. Furthermore, by adjusting the carbon proportion and lowering the coupling coefficient in the model, an excellent TR ratio in four CBNNTs was obtained and its heat flux is even larger than the value at a carbon percentage of 50% in larger coupling. We fully utilized the phonon density of states, phonon participation rate, and mean square displacement. Our results demonstrate the possibility of multiple CBNNTs as thermal rectifiers and provide theoretical guidance for heteronanotube arrays to be applied.

Sustainable Oily Liquid-Proof Passive Cooling (SOC) Textile for Personal Thermal Management

Sweat passive-cooling textiles with asymmetric wettabilities on different sides offer an effective and low-energy consumption solution to personal thermal management in extreme thermal environments. However, the sweat-wicking and the cooling abilities decrease when the textile is contaminated by low-surface tension oily liquid fouling. The integration of anti-oily liquid fouling and sweat-wicking abilities on textile involves resolving the contradiction between hydrophilic and oleophobic properties and seeking eco-friendly short-chain fluorides to reduce the surface energy. Herein, a sustainable oily liquid-proof passive cooling (SOC) textile for personal thermal management is proposed. The SOC textile is obtained by applying a fluoride-free hydrophobic coating layer to one side of the high thermal conductive superoleophobic/superhydrophilic basal textile, which is fabricated using eco-friendly short-chain fluoride. The SOC textile preserves the anti-oily liquid fouling property even after 2000 abrasion cycles. Experimental test revealed that the SOC textile exhibits a cooling effect of ≈5 °C compared with the cotton textile, and the up to 70% reduction in sweating rate under the constant metabolic heat production rates. The configuration of the SOC textile would inspire the future design of intelligent textiles for personal thermal management, and the proposed strategy have implications for fabrication of eco-friendly oil-water separation materials.

Layer-dependent excellent thermoelectric materials: from monolayer to trilayer tellurium based on DFT calculation

Monoelemental two-dimensional (2D) materials, which are superior to binary and ternary 2D materials, currently attract remarkable interest due to their fascinating properties. Though the thermal and thermoelectric (TE) transport properties of tellurium have been studied in recent years, there is little research about the thermal and TE properties of multilayer tellurium with interlayer interaction force. Herein, the layer modulation of the phonon transport and TE performance of monolayer, bilayer, and trilayer tellurium is investigated by first-principles calcuations. First, it was found that thermal conductivity as a function of layer numbers possesses a robust, unusually non-monotonic behavior. Moreover, the anisotropy of the thermal transport properties of tellurium is weakened with the increase in the number of layers. By phonon-level systematic analysis, we found that the variation of phonon transport under the layer of increment was determined by increasing the phonon velocity in specific phonon modes. Then, the TE transport properties showed that the maximum figure of merit (ZT) reaches 6.3 (p-type) along the armchair direction at 700 K for the monolayer and 6.6 (p-type) along the zigzag direction at 700 K for the bilayer, suggesting that the TE properties of the monolayer are highly anisotropic. This study reveals that monolayer and bilayer tellurium have tremendous opportunities as candidates in TE applications. Moreover, further increasing the layer number to 3 hinders the improvement of TE performance for 2D tellurium.

Phonon mechanism of angle-dependent superlubricity between black phosphorus layers

Based on a combination of molecular dynamics simulations and quantum theories, this study discloses the phonon mechanism of angle-dependent superlubricity between black phosphorus layers. Friction exhibits 180° periodicity, i.e., the highest friction at 0° and 180° and lowest at 90°. Thermal excitation reduces friction at 0° due to thermal lubrication. However, at 90°, high temperature increases friction caused by thermal collision owing to lower interfacial constraints. Phonon spectra reveal that with 0°, energy dissipation channels can be formed at the interface, thus enhancing dissipation efficiency, while the energy dissipation channels are destroyed, thus hindering frictional dissipation at 90°. Besides, for both commensurate and incommensurate cases, more phonons are excited on atoms adjacent to the contact interface than those excited from nonadjacent interface atoms.

Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

With the development of chip technology, the density of transistors on integrated circuits is increasing and the size is gradually shrinking to the micro-/nanoscale, with the consequent problem of heat dissipation on chips becoming increasingly serious. For device applications, efficient heat dissipation and thermal management play a key role in ensuring device operation reliability. In this review, we summarize the thermal management applications based on 2D materials from both theoretical and experimental perspectives. The regulation approaches of thermal transport can be divided into two main types: intrinsic structure engineering (acting on the intrinsic structure) and non-structure engineering (applying external fields). On one hand, the thermal transport properties of 2D materials can be modulated by defects and disorders, size effect (including length, width, and the number of layers), heterostructures, structure regulation, doping, alloy, functionalizing, and isotope purity. On the other hand, strain engineering, electric field, and substrate can also modulate thermal transport efficiently without changing the intrinsic structure of the materials. Furthermore, we propose a perspective on the topic of using magnetism and light field to modulate the thermal transport properties of 2D materials. In short, we comprehensively review the existing thermal management modulation applications as well as the latest research progress, and conclude with a discussion and perspective on the applications of 2D materials in thermal management, which will be of great significance to the development of next-generation nanoelectronic devices.

Polytypes of sp2-Bonded Boron Nitride

The sp2-bonded layered compound boron nitride (BN) exists in more than a handful of different polytypes (i.e., different layer stacking sequences) with similar formation energies, which makes obtaining a pure monotype of single crystals extremely tricky. The co-existence of polytypes in a similar crystal leads to the formation of many interfaces and structural defects having a deleterious influence on the internal quantum efficiency of the light emission and on charge carrier mobility. However, despite this, lasing operation was reported at 215 nm, which has shifted interest in sp2- bonded BN from basic science laboratories to optoelectronic and electrical device applications. Here, we describe some of the known physical properties of a variety of BN polytypes and their performances for deep ultraviolet emission in the specific case of second harmonic generation of light.

Thermal interface materials with graphene fillers: review of the state of the art and outlook for future applications

We review the current state-of-the-art graphene-enhanced thermal interface materials for the management of heat in the next generation of electronics. Increased integration densities, speed and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising filler material that can meet the demands of future high-speed and high-powered electronics. This review describes the use of graphene as a filler in curing and non-curing polymer matrices. Special attention is given to strategies for achieving the thermal percolation threshold with its corresponding characteristic increase in the overall thermal conductivity. Many applications require high thermal conductivity of composites, while simultaneously preserving electrical insulation. A hybrid filler approach, using graphene and boron nitride, is presented as a possible technology providing for the independent control of electrical and thermal conduction. The reliability and lifespan performance of thermal interface materials is an important consideration towards the determination of appropriate practical applications. The present review addresses these issues in detail, demonstrating the promise of graphene-enhanced thermal interface materials compared to alternative technologies.

The Impact of Interlayer Rotation on Thermal Transport Across Graphene/Hexagonal Boron Nitride van der Waals Heterostructure

Graphene/hexagonal boron nitride (h-BN) van der Waals (vdW) heterostructure has aroused great interest because of the unique Moiré pattern. In this study, we use molecular dynamics simulation to investigate the influence of the interlayer rotation angle θ on the interfacial thermal transport across graphene/h-BN heterostructure. The interfacial thermal conductance G of graphene/h-BN interface reaches 509 MW/(m²K) at 500 K without rotation, and it decreases monotonically with the increase of the rotation angle, exhibiting around 50% reduction of G with θ = 26.33°. The phonon transmission function reveals that G is dominantly contributed by the low-frequency phonons below 10 THz. Upon rotation, the surface fluctuation in the interfacial graphene layer is enhanced, and the transmission function for the low-frequency phonon is reduced with increasing θ, leading to the rotation angle-dependent G. This work uncovers the physical mechanisms for controlling interfacial thermal transport across vdW heterostructure via interlayer rotation.

Ultra-strong stability of double-sided fluorinated monolayer graphene and its electrical property characterization

Fluorinated graphene has a tunable band gap that is useful in making flexible graphene electronics. But the carbon-fluorine (C-F) bonds in fluorinated graphene can be easily broken by increased temperature or electron beam irradiation. Here, we demonstrate that the stability of fluorinated graphene is mainly determined by its C-F configuration. The double-sided fluorinated graphene has a much stronger stability than the single-sided fluorinated graphene under the same irradiation dose. Density functional theory calculations show that the configuration of double-sided fluorinated graphene has a negative and low formation energy, indicating to be an energetically stable structure. On the contrary, the formation energy of single-sided fluorinated graphene is positive, leading to an unstable C-F bonding that is easily broken by the irradiation. Our findings make a new step towards a more stable and efficient design of graphene electronic devices.

Thermal Rectification in Asymmetric Graphene/Hexagonal Boron Nitride van der Waals Heterostructures

Graphene/hexagonal boron nitride (h-BN) heterostructures assembled by van der Waals (vdW) interactions show numerous unique physical properties such as quantum Hall effects and exotic correlated states, which have promising potential applications in the design of novel electronic devices. Understanding thermal transport in such junctions is critical to control the performance and stability of prospective nanodevices. In this work, using nonequilibrium molecular dynamics simulations, we systematically investigate the thermal transport in asymmetric graphene/h-BN vdW heterostructures. It is found that the heat prefers to flow from the monolayer to the multilayer regions, resulting in a significant thermal rectification (TR) effect. To determine the optimum conditions for TR, the influences of sample length, defect density, asymmetric degree, ambient temperature, and vdW interaction strength are studied. Particularly, we found that the TR ratio could be improved by about 1 order of magnitude via increasing the coupling strength from 1 to 10, which clearly distinguishes from the commonly held notion that the TR ratio is practically insensitive or even decreasing with the interaction strength. Detailed spectral analysis reveals that this unexpected increase of the TR ratio can be attributed to heavily modified phonon properties of encased graphene due to enhanced interlayer coupling. Our results elucidate the importance of vdW interactions to heat conduction in nanostructures.

Improving Formation Conditions and Properties of hBN Nanosheets Through BaF2-assisted Polymer Derived Ceramics (PDCs) Technique

Hexagonal boron nitrite (hBN) is an attractive material for many applications such as in electronics as a complement to graphene, in anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality hBN at cost-effective conditions is still a great challenge. Thus, this work reports on the synthesis of large-area and crystalline hBN nanosheets via the modified polymer derived ceramics (PDCs) process. The addition of both the BaF2 and Li3N, as melting-point reduction and crystallization agents, respectively, led to the production of hBN powders with excellent physicochemical properties at relatively low temperatures and atmospheric pressure conditions. For instance, XRD, Raman, and XPS data revealed improved crystallinity and quality at a decreased formation temperature of 1200 °C upon the addition of 5 wt% of BaF2. Moreover, morphological determination illustrated the formation of multi-layered nanocrystalline and well-defined shaped hBN powders with crystal sizes of 2.74-8.41 ± 0.71 µm in diameter. Despite the compromised thermal stability, as shown by the ease of oxidation at high temperatures, this work paves way for the production of large-scale and high-quality hBN crystals at a relatively low temperature and atmospheric pressure conditions.

Ultra-low thermal conductivity and high thermoelectric performance of two-dimensional triphosphides (InP3, GaP3, SbP3 and SnP3): a comprehensive first-principles study

By performing first-principles calculations combined with the Boltzmann transport equation, we report a comprehensive study of the thermal and thermoelectric properties of monolayer triphosphides InP3, GaP3, SbP3 and SnP3. Firstly, we studied the structure and phonon dispersion, and discussed the long-range atomic interactions by analyzing the second-order interatomic force constants (IFCs). Next, we predicted the corresponding thermal conductivities of monolayer InP3, GaP3, SbP3 and SnP3 at 300 K to be 0.64 W m-1 K-1, 3.02 W m-1 K-1, 1.04 W m-1 K-1 and 0.48 W m-1 K-1, respectively. To study the thermoelectric properties, the carrier mobility and electron relaxation time of the four materials were predicted by the deformation potential theory method and explained by analyzing their energy band structures. Then, the Seebeck coefficient, electrical conductivity and thermoelectric figure of merit (ZT) at different temperatures were calculated by using the Boltzmann transport equation with relaxation time approximation. Finally, we predicted the maximum ZT values of InP3, GaP3, SbP3 and SnP3 to be up to 2.6, 0.9, 1.9 and 3.7 at 300 K and up to 4.6, 1.6, 3.5 and 6.1 at 500 K, respectively. With ultra-low thermal conductivity and high thermoelectric performance, monolayer triphosphides are considered as potential candidates for thermoelectric materials.

Two dimensional (2D) reduced graphene oxide (RGO)/hexagonal boron nitride (h-BN) based nanocomposites as anodes for high temperature rechargeable lithium-ion batteries

With lithium-ion (li-ion) batteries as energy storage devices, operational safety from thermal runaway remains a major obstacle especially for applications in harsh environments such as in the oil industry. In this approach, a facile method via microwave irradiation technique (MWI) was followed to prepare Co3O4/reduced graphene oxide (RGO)/hexagonal boron nitride (h-BN) nanocomposites as anodes for high temperature li-ion batteries. Results showed that the addition of h-BN not only enhanced the thermal stability of Co3O4/RGO nanocomposites but also enhanced the specific surface area. Co3O4/RGO/h-BN nanocomposites displayed the highest specific surface area of 191 m2/g evidencing the synergistic effects between RGO and h-BN. Moreover, Co3O4/RGO/h-BN also displayed the highest specific capacity with stable reversibility on the high performance after 100 cycles and lower internal resistance. Interestingly, this novel nanocomposite exhibits outstanding high temperature performances with excellent cycling stability (100% capacity retention) and a decreased internal resistance at 150 °C.

Achieving Significant Thermal Conductivity Enhancement via an Ice-Templated and Sintered BN-SiC Skeleton

Conventional polymer composites normally suffer from undesired thermal conductivity enhancement which has hampered the development of modern electronics as they face a stricter heat dissipating requirement. It is still challenging to achieve satisfactory thermal conductivity enhancement with reasonable mechanical properties. Herein, we present a three-dimensional (3D), lightweight, and mechanically strong boron nitride (BN)-silicon carbide (SiC) skeleton with aligned thermal pathways via the combination of ice-templated assembly and high-temperature sintering. The sintering has introduced atomic-level coupling at the BN-SiC junction which contributes to efficient phonon transport via the newly formed borosilicate glass BC_xN_3-x (0 ≤ x ≤ 3) and SiC_xN_4-x (0 ≤ x ≤ 4) phases, leading to much lower interfacial thermal resistance. Thus, the obtained BN-SiC skeleton shows satisfactory thermal performance. The prepared 3D BN-SiC/polydimethylsiloxane (PDMS) composites exhibit a maximum through-plane thermal conductivity of 3.87 W·m^-1·K^-1 at a filler loading of only 8.35 vol %. The thermal conductivity enhancement efficiency reaches 220% per 1 vol % filler when compared to pure PDMS matrix, superior to other reported BN skeleton-based composites. The feature of our strategy is to allow the oriented three-dimensional skeleton to be strongly bonded by a sintered ceramic phase instead of polymer-like adhesive, namely, to improve the intrinsic thermal conductivity of the skeleton to the greatest extent. This strategy can be applied to develop novel thermal management materials that are lightweight and mechanically tough that rapidly transfer heat. It represents a new avenue to addressing the heat challenges in traditional electronic products.

Development of Thermally Conductive Polyurethane Composite by Low Filler Loading of Spherical BN/PMMA Composite Powder

The issue of electronic heat dissipation has received much attention in recent times and has become one of the key factors in electronic components such as circuit boards. Therefore, designing of materials with good thermal conductivity is vital. In this work, a thermally conductive SBP/PU composite was prepared wherein the spherical h-BN@PMMA (SBP) composite powders were dispersed in the polyurethane (PU) matrix. The thermal conductivity of SBP was found to be significantly higher than that of the pure h-BN/PU composite at the same h-BN filler loading. The SBP/PU composite can reach a high thermal conductivity of 7.3 Wm^-1 K^-1 which is twice as high as that of pure h-BN/PU composite without surface treatment in the same condition. This enhancement in the property can be attributed to the uniform dispersion of SBP in the PU polymer matrix that leads to a three-dimensional continuous heat conduction thereby improving the heat diffusion of the entire composite. Hence, we provide a valuable method for preparing a 3-dimensional heat flow path in polyurethane composite, leading to a high thermal conductivity with a small amount of filler.

Three-Dimensional Heterostructured Reduced Graphene Oxide-Hexagonal Boron Nitride-Stacking Material for Silicone Thermal Grease with Enhanced Thermally Conductive Properties

The thermally conductive properties of silicone thermal grease enhanced by hexagonal boron nitride (hBN) nanosheets as a filler are relevant to the field of lightweight polymer-based thermal interface materials. However, the enhancements are restricted by the amount of hBN nanosheets added, owing to a dramatic increase in the viscosity of silicone thermal grease. To this end, a rational structural design of the filler is needed to ensure the viable development of the composite material. Using reduced graphene oxide (RGO) as substrate, three-dimensional (3D) heterostructured reduced graphene oxide-hexagonal boron nitride (RGO-hBN)-stacking material was constructed by self-assembly of hBN nanosheets on the surface of RGO with the assistance of binder for silicone thermal grease. Compared with hBN nanosheets, 3D RGO-hBN more effectively improves the thermally conductive properties of silicone thermal grease, which is attributed to the introduction of graphene and its phonon-matching structural characteristics. RGO-hBN/silicone thermal grease with lower viscosity exhibits higher thermal conductivity, lower thermal resistance and better thermal management capability than those of hBN/silicone thermal grease at the same filler content. It is feasible to develop polymer-based thermal interface materials with good thermal transport performance for heat removal of modern electronics utilising graphene-supported hBN as the filler at low loading levels.

Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED

Group III-nitride light-emitting diodes (LEDs) fabricated on sapphire substrates typically suffer from insufficient heat dissipation, largely due to the low thermal conductivities (TCs) of their epitaxial layers and substrates. In the current work, we significantly improved the heat-dissipation characteristics of an InGaN/GaN quantum-well (QW) green LED by using hexagonal boron nitride (hBN) as a heat-transfer medium. Multiple-layer hBN with an average thickness of 11 nm was attached to the back of an InGaN/GaN-QW LED (hBN-LED). As a reference, an LED without the hBN (Ref-LED) was also prepared. After injecting current, heat-transfer characteristics inside each LED were analyzed by measuring temperature distribution throughout the LED as a function of time. For both LED chips, the maximum temperature was measured on the edge n-type electrode brightly shining fabricated on an n-type GaN cladding layer and the minimum temperature was measured at the relatively dark-contrast top surface between the p-type electrodes. The hBN-LED took 6 s to reach its maximum temperature (136.1 °C), whereas the Ref-LED took considerably longer, specifically 11 s. After being switched off, the hBN-LED took 35 s to cool down to 37.5 °C and the Ref-LED took much longer, specifically 265 s. These results confirmed the considerable contribution of the attached hBN to the transfer and dissipation of heat in the LED. The spatial heat-transfer and distribution characteristics along the vertical direction of each LED were theoretically analyzed by carrying out simulations based on the TCs, thicknesses, and thermal resistances of the materials used in the chips. The results of these simulations agreed well with the experimental results.

Disparate strain response of the thermal transport properties of bilayer penta-graphene as compared to that of monolayer penta-graphene

In this study, strain modulation of the lattice thermal conductivity of monolayer and bilayer penta-graphene (PG) at room temperature was investigated using first-principles calculations combined with the phonon Boltzmann transport equation.

Construction of 3D Skeleton for Polymer Composites Achieving a High Thermal Conductivity

Owing to the growing heat removal issue in modern electronic devices, electrically insulating polymer composites with high thermal conductivity have drawn much attention during the past decade. However, the conventional method to improve through-plane thermal conductivity of these polymer composites usually yields an undesired value (below 3.0 Wm^-1 K^-1 ). Here, construction of a 3D phonon skeleton is reported composed of stacked boron nitride (BN) platelets reinforced with reduced graphene oxide (rGO) for epoxy composites by the combination of ice-templated and infiltrating methods. At a low filler loading of 13.16 vol%, the resulting 3D BN-rGO/epoxy composites exhibit an ultrahigh through-plane thermal conductivity of 5.05 Wm^-1 K^-1 as the best thermal-conduction performance reported so far for BN sheet-based composites. Theoretical models qualitatively demonstrate that this enhancement results from the formation of phonon-matching 3D BN-rGO networks, leading to high rates of phonon transport. The strong potential application for thermal management has been demonstrated by the surface temperature variations of the composites with time during heating and cooling.

Thermal and electronic transport characteristics of highly stretchable graphene kirigami

For centuries, cutting and folding papers with special patterns have been used to build beautiful, flexible and complex three-dimensional structures. Inspired by the old idea of kirigami (paper cutting), and the outstanding properties of graphene, recently graphene kirigami structures were fabricated to enhance the stretchability of graphene. However, the possibility of further tuning the electronic and thermal transport along the 2D kirigami structures has remained original to investigate. We therefore performed extensive atomistic simulations to explore the electronic, heat and load transfer along various graphene kirigami structures. The mechanical response and thermal transport were explored using classical molecular dynamics simulations. We then used a real-space Kubo-Greenwood formalism to investigate the charge transport characteristics in graphene kirigami. Our results reveal that graphene kirigami structures present highly anisotropic thermal and electrical transport. Interestingly, we show the possibility of tuning the thermal conductivity of graphene by four orders of magnitude. Moreover, we discuss the engineering of kirigami patterns to further enhance their stretchability by more than 10 times as compared with pristine graphene. Our study not only provides a general understanding concerning the engineering of electronic, thermal and mechanical response of graphene, but more importantly can also be useful to guide future studies with respect to the synthesis of other 2D material kirigami structures, to reach highly flexible and stretchable nanostructures with finely tunable electronic and thermal properties.