Dirko VV, Lozovoy KA, Kokhanenko AP, Kukenov OI, Korotaev AG, Voitsekhovskii AV. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface.
NANOMATERIALS (BASEL, SWITZERLAND) 2023;
13:231. [PMID:
36677983 PMCID:
PMC9862873 DOI:
10.3390/nano13020231]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 12/30/2022] [Accepted: 12/30/2022] [Indexed: 06/17/2023]
Abstract
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered.
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