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For: Scheffler M, Vigneron JP, Bachelet GB. Total-energy gradients and lattice distortions at point defects in semiconductors. Phys Rev B Condens Matter 1985;31:6541-6551. [PMID: 9935535 DOI: 10.1103/physrevb.31.6541] [Citation(s) in RCA: 71] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
Number Cited by Other Article(s)
1
Quiton SJ, Wu H, Xing X, Lin L, Head-Gordon M. The Staggered Mesh Method: Accurate Exact Exchange Toward the Thermodynamic Limit for Solids. J Chem Theory Comput 2024. [PMID: 39213528 DOI: 10.1021/acs.jctc.4c00771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
2
Kühne TD, Iannuzzi M, Del Ben M, Rybkin VV, Seewald P, Stein F, Laino T, Khaliullin RZ, Schütt O, Schiffmann F, Golze D, Wilhelm J, Chulkov S, Bani-Hashemian MH, Weber V, Borštnik U, Taillefumier M, Jakobovits AS, Lazzaro A, Pabst H, Müller T, Schade R, Guidon M, Andermatt S, Holmberg N, Schenter GK, Hehn A, Bussy A, Belleflamme F, Tabacchi G, Glöß A, Lass M, Bethune I, Mundy CJ, Plessl C, Watkins M, VandeVondele J, Krack M, Hutter J. CP2K: An electronic structure and molecular dynamics software package - Quickstep: Efficient and accurate electronic structure calculations. J Chem Phys 2020;152:194103. [PMID: 33687235 DOI: 10.1063/5.0007045] [Citation(s) in RCA: 924] [Impact Index Per Article: 231.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]  Open
3
Zhu J, Zhou Y, Wang B, Zheng J, Ji S, Yao H, Luo H, Jin P. Vanadium Dioxide Nanoparticle-based Thermochromic Smart Coating: High Luminous Transmittance, Excellent Solar Regulation Efficiency, and Near Room Temperature Phase Transition. ACS APPLIED MATERIALS & INTERFACES 2015;7:27796-27803. [PMID: 26618391 DOI: 10.1021/acsami.5b09011] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
4
Kühne TD. Second generation Car-Parrinello molecular dynamics. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2014. [DOI: 10.1002/wcms.1176] [Citation(s) in RCA: 102] [Impact Index Per Article: 10.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
5
Ruiz-Serrano Á, Hine NDM, Skylaris CK. Pulay forces from localized orbitals optimized in situ using a psinc basis set. J Chem Phys 2012;136:234101. [DOI: 10.1063/1.4728026] [Citation(s) in RCA: 41] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
6
Badinski A, Needs RJ. Accurate forces in quantum Monte Carlo calculations with nonlocal pseudopotentials. PHYSICAL REVIEW. E, STATISTICAL, NONLINEAR, AND SOFT MATTER PHYSICS 2007;76:036707. [PMID: 17930361 DOI: 10.1103/physreve.76.036707] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2007] [Indexed: 05/25/2023]
7
Miyazaki T, Bowler DR, Choudhury R, Gillan MJ. Atomic force algorithms in density functional theory electronic-structure techniques based on local orbitals. J Chem Phys 2004;121:6186-94. [PMID: 15446912 DOI: 10.1063/1.1787832] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
8
Intrinsic Point Defects. COMPUTATIONAL MICROELECTRONICS 2004. [DOI: 10.1007/978-3-7091-0597-9_2] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2023]
9
Park N, Yoon M, Berber S, Ihm J, Osawa E, Tománek D. Magnetism in all-carbon nanostructures with negative Gaussian curvature. PHYSICAL REVIEW LETTERS 2003;91:237204. [PMID: 14683212 DOI: 10.1103/physrevlett.91.237204] [Citation(s) in RCA: 44] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2003] [Indexed: 05/24/2023]
10
Stoneham AM, Pajot B, Schober HR. Local distortions and volume changes in semiconductors: donors in silicon. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/21/26/016] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
11
Ziesche P, Kunze K, Milek B. Generalisation of the Hellmann-Feynman theorem to Gamow states. ACTA ACUST UNITED AC 1999. [DOI: 10.1088/0305-4470/20/10/030] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
12
Casali RA, Caravaca MA, Rodriguez CO. Local relaxations and electric-field gradient at the Cd site in heavily doped Si:Cd. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:16701-16705. [PMID: 9985798 DOI: 10.1103/physrevb.54.16701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
13
Sabisch M, Krüger P, Mazur A, Rohlfing M, Pollmann J. First-principles calculations of beta -SiC(001) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:13121-13132. [PMID: 9982991 DOI: 10.1103/physrevb.53.13121] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
14
Sabisch M, Krüger P, Pollmann J. Ab initio calculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:13367-13380. [PMID: 9978141 DOI: 10.1103/physrevb.51.13367] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
15
Hernández E, Gillan MJ. Self-consistent first-principles technique with linear scaling. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:10157-10160. [PMID: 9977692 DOI: 10.1103/physrevb.51.10157] [Citation(s) in RCA: 108] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
16
Krimmel HG, Ehmann J, Elsässer C, Fähnle M, Soler JM. Calculation of atomic forces using the linearized-augmented-plane-wave method. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:8846-8848. [PMID: 9974907 DOI: 10.1103/physrevb.50.8846] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
17
Bormet J, Neugebauer J, Scheffler M. Chemical trends and bonding mechanisms for isloated adsorbates on Al(111). PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:17242-17252. [PMID: 10010903 DOI: 10.1103/physrevb.49.17242] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
18
Li WG, Myles CW. Deep-level wave functions including lattice-relaxation effects. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:4281-4288. [PMID: 10006573 DOI: 10.1103/physrevb.47.4281] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
19
Kelly PJ, Car R. Green's-matrix calculation of total energies of point defects in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1992;45:6543-6563. [PMID: 10000415 DOI: 10.1103/physrevb.45.6543] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
20
Li WG, Myles CW. Molecular-dynamics approach to lattice-relaxation effects on deep levels in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:9947-9950. [PMID: 9996701 DOI: 10.1103/physrevb.43.9947] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
21
Li WG, Myles CW. Effects of lattice relaxation on deep levels in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:2192-2200. [PMID: 9997491 DOI: 10.1103/physrevb.43.2192] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
22
Jackson K, Pederson MR. Accurate forces in a local-orbital approach to the local-density approximation. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:3276-3281. [PMID: 9995841 DOI: 10.1103/physrevb.42.3276] [Citation(s) in RCA: 192] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
23
Windisch D, Becker P. Silicon lattice parameters as an absolute scale of length for high precision measurements of fundamental constants. ACTA ACUST UNITED AC 1990. [DOI: 10.1002/pssa.2211180205] [Citation(s) in RCA: 130] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
24
Mäkinen S, Puska MJ. Positron states at vacancy-impurity pairs in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:12523-12526. [PMID: 9991893 DOI: 10.1103/physrevb.40.12523] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
25
Antonelli A, Bernholc J. Pressure effects on self-diffusion in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:10643-10646. [PMID: 9991622 DOI: 10.1103/physrevb.40.10643] [Citation(s) in RCA: 43] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
26
Structure, ionization potentials, dissociation channels and surface energy of sodium microclusters. ACTA ACUST UNITED AC 1989. [DOI: 10.1007/bf02455358] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
27
Gonze X, Vigneron J. Density-functional approach to nonlinear-response coefficients of solids. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:13120-13128. [PMID: 9948209 DOI: 10.1103/physrevb.39.13120] [Citation(s) in RCA: 104] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
28
Bechstedt F, Harrison WA. Lattice relaxation around substitutional defects in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:5041-5050. [PMID: 9948893 DOI: 10.1103/physrevb.39.5041] [Citation(s) in RCA: 27] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
29
Puska MJ, Corbel C. Positron states in Si and GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;38:9874-9880. [PMID: 9945810 DOI: 10.1103/physrevb.38.9874] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
30
Dabrowski J, Scheffler M. Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2? PHYSICAL REVIEW LETTERS 1988;60:2183-2186. [PMID: 10038281 DOI: 10.1103/physrevlett.60.2183] [Citation(s) in RCA: 74] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
31
Harrison WA, Kraut EA. Energies of substitution and solution in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;37:8244-8256. [PMID: 9944159 DOI: 10.1103/physrevb.37.8244] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
32
Samara GA. Breathing-mode lattice relaxation associated with the vacancy and phosphorous-vacancy-pair (E-center) defect in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;37:8523-8526. [PMID: 9944210 DOI: 10.1103/physrevb.37.8523] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
33
Stefanou N, Braspenning PJ, Zeller R, Dederichs PH. Treatment of lattice relaxations in dilute alloys within the Korringa-Kohn-Rostoker Green's-function method. PHYSICAL REVIEW. B, CONDENSED MATTER 1987;36:6372-6382. [PMID: 9942345 DOI: 10.1103/physrevb.36.6372] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
34
Samara GA. Pressure dependence of deep electronic levels in semiconductors: The oxygen-vacancy pair (or A center) in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1987;36:4841-4848. [PMID: 9943501 DOI: 10.1103/physrevb.36.4841] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
35
Scheffler M. Lattice relaxations at substitutional impurities in semiconductors. ACTA ACUST UNITED AC 1987. [DOI: 10.1016/0378-4363(87)90060-x] [Citation(s) in RCA: 41] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
36
Baranowski JM, Tatarkiewicz J. Bonding or antibonding position of hydrogen in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1987;35:7450-7453. [PMID: 9941047 DOI: 10.1103/physrevb.35.7450] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
37
Samara GA, Barnes CE. Pressure dependence of impurity levels in semiconductors: The deep gold acceptor level and shallow donor and acceptor levels in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1987;35:7575-7584. [PMID: 9941062 DOI: 10.1103/physrevb.35.7575] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
38
Feibelman PJ. Force and total-energy calculations for a spatially compact adsorbate on an extended, metallic crystal surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1987;35:2626-2646. [PMID: 9941737 DOI: 10.1103/physrevb.35.2626] [Citation(s) in RCA: 87] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
39
Sprenger M, Muller SH, Sieverts EG, Ammerlaan CA. Vacancy in silicon: Hyperfine interactions from electron-nuclear double resonance measurements. PHYSICAL REVIEW. B, CONDENSED MATTER 1987;35:1566-1581. [PMID: 9941574 DOI: 10.1103/physrevb.35.1566] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
40
Puska MJ, Jepsen O, Gunnarsson O, Nieminen RM. Electronic structure and positron states at vacancies in Si and GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1986;34:2695-2705. [PMID: 9939965 DOI: 10.1103/physrevb.34.2695] [Citation(s) in RCA: 48] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
41
Erbil A, Weber W, Cargill GS, Boehme RF. Lattice distortions for arsenic in single-crystal silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1986;34:1392-1394. [PMID: 9939780 DOI: 10.1103/physrevb.34.1392] [Citation(s) in RCA: 42] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
42
Beeler F, Scheffler M, Jepsen O, Gunnarsson O. Identification of chalcogen point-defect sites in silicon by total-energy calculations. PHYSICAL REVIEW LETTERS 1985;54:2525-2528. [PMID: 10031365 DOI: 10.1103/physrevlett.54.2525] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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