Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices

Liquid-Phase van der Waals Epitaxy of a Few-Layer and Unit-Cell Thick Ruddlesden-Popper Halide Perovskite

2D Ruddlesden-Popper (RP) halide perovskites with natural multiple quantum well structures are an ideal platform to integrate into vertical heterostructures, which may introduce plentiful intriguing optoelectronic properties that are not accessible in a single bulk crystal. Here, we report liquid-phase van der Waals epitaxy of a 2D RP hybrid perovskite (4,4-DFPD)₂PbI₄ (4,4-DFPD is 4,4-difluoropiperidinium) on muscovite mica and fabricate a series of perovskite-perovskite vertical heterostructures by integrating it with a second 2D RP perovskite R-NPB [NPB = 1-(1-naphthyl)ethylammonium lead bromide] sheets. The grown (4,4-DFPD)₂PbI₄ nanobelt array can be multiple layers to unit-cell thin and are crystallographically aligned on the mica substrate. An interlayer photo emission in this R-NPB/(4,4-DFPD)₂PbI₄ heterostructure with a lifetime of about 25 ns at 120 K has been revealed. Our demonstration of epitaxial (4,4-DFPD)₂PbI₄ array grown on mica via liquid-phase van der Waals epitaxy provides a paradigm to prepare orderly distributed 2D RP hybrid perovskites for further integration into multiple heterostructures. The discovery of a new interlayer emission in the R-NPB/(4,4-DFPD)₂PbI₄ heterostructure enriches the basic understanding of interlayer charge transition in halide perovskite systems.

Light-matter interaction in van der Waals hetero-structures

Even if individual two-dimensional materials own various interesting and unexpected properties, the stacking of such layers leads to van der Waals solids which unite the characteristics of two dimensions with novel features originating from the interlayer interactions. In this topical review, we cover fabrication and characterization of van der Waals hetero-structures with a focus on hetero-bilayers made of monolayers of semiconducting transition metal dichalcogenides. Experimental and theoretical techniques to investigate those hetero-bilayers are introduced. Most recent findings focusing on different transition metal dichalcogenides hetero-structures are presented and possible optical transitions between different valleys, appearance of moiré patterns and signatures of moiré excitons are discussed. The fascinating and fast growing research on van der Waals hetero-bilayers provide promising insights required for their application as emerging quantum-nano materials.

Interlayer excitons in a bulk van der Waals semiconductor

Bound electron-hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose-Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe₂, we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures.Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley coupling of charge carriers.

Revealing and Characterizing Dark Excitons through Coherent Multidimensional Spectroscopy

Dark excitons are of fundamental importance in a broad range of contexts but are difficult to study using conventional optical spectroscopy due to their weak interaction with light. We show how coherent multidimensional spectroscopy can reveal and characterize dark states. Using this approach, we identify parity-forbidden and spatially indirect excitons in InGaAs/GaAs quantum wells and determine details regarding lifetimes, homogeneous and inhomogeneous linewidths, broadening mechanisms, and coupling strengths. The observations of coherent coupling between these states and bright excitons hint at a role for a multistep process by which excitons in the barrier can relax into the quantum wells.

Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices

The characteristic energies, occupancies and polarizations of the minibands formed by the Γ-Γ and Γ-Xz interlayer electon tunnelings in the InGaAs/InP superlattices are studied in the regime of the integer quantum Hall effect by polarization resolved photoluminescence. Accordingly, the magnetic field induced shrinkage of the interminiband gap, predicted by the theory, and as a consequence, the redistribution of charge over the superlattice minibands and the depolarization of the quantum Hall electron states are observed at odd filling factors. The response of the electrons residing in the InGaAs/InP superlattice minibands to the magnetic field is found very similar to the corresponding response of the electrons confined in the symmetric and anti-symmetric two-dimensional minibands of GaAs/AlGaAs double quantum wells. The presented results are evidence of the formation of the correlated states in multi-component electron systems formed in semiconductor multiple layers at odd filling factors.