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Sjakste J, Tanimura K, Barbarino G, Perfetti L, Vast N. Hot electron relaxation dynamics in semiconductors: assessing the strength of the electron-phonon coupling from the theoretical and experimental viewpoints. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:353001. [PMID: 30084390 DOI: 10.1088/1361-648x/aad487] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The rapid development of the computational methods based on density functional theory, on the one hand, and of time-, energy-, and momentum-resolved spectroscopy, on the other hand, allows today an unprecedently detailed insight into the processes governing hot-electron relaxation dynamics, and, in particular, into the role of the electron-phonon coupling. Instead of focusing on the development of a particular method, theoretical or experimental, this review aims to treat the progress in the understanding of the electron-phonon coupling which can be gained from both, on the basis of recently obtained results. We start by defining several regimes of hot electron relaxation via electron-phonon coupling, with respect to the electron excitation energy. We distinguish between energy and momentum relaxation of hot electrons, and summarize, for several semiconductors of the IV and III-V groups, the orders of magnitude of different relaxation times in different regimes, on the basis of known experimental and numerical data. Momentum relaxation times of hot electrons become very short around 1 eV above the bottom of the conduction band, and such ultrafast relaxation mechanisms are measurable only in the most recent pump-probe experiments. Then, we give an overview of the recent progress in the experimental techniques allowing to obtain detailed information on the hot-electron relaxation dynamics, with the main focus on time-, energy-, and momentum-resolved photoemission experiments. The particularities of the experimental approach developed by one of us, which allows to capture time-, energy-, and momentum-resolved hot-electron distributions, as well as to measure momentum relaxation times of the order of 10 fs, are discussed. We further discuss the main advances in the calculation of the electron-phonon scattering times from first principles over the past ten years, in semiconducting materials. Ab initio techniques and efficient interpolation methods provide the possibility to calculate electron-phonon scattering times with high precision at reasonable numerical cost. We highlight the methods of analysis of the obtained numerical results, which allow to give insight into the details of the electron-phonon scattering mechanisms. Finally, we discuss the concept of hot electron ensemble which has been proposed recently to describe the hot-electron relaxation dynamics in GaAs, the applicability of this concept to other materials, and its limitations. We also mention some open problems.
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Affiliation(s)
- J Sjakste
- Laboratoire des Solides Irradiés, Ecole Polytechnique, CEA-DRF-IRAMIS, CNRS UMR 7642, 91120 Palaiseau, France
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Sippel P, Albrecht W, van der Bok JC, Van Dijk-Moes RJA, Hannappel T, Eichberger R, Vanmaekelbergh D. Femtosecond cooling of hot electrons in CdSe quantum-well platelets. NANO LETTERS 2015; 15:2409-2416. [PMID: 25764379 DOI: 10.1021/nl504706w] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Semiconductor quantum wells are ubiquitous in high-performance optoelectronic devices such as solar cells and lasers. Understanding and controlling of the (hot) carrier dynamics is essential to optimize their performance. Here, we study hot electron cooling in colloidal CdSe quantum-well nanoplatelets using ultrafast two-photon photoemission spectroscopy at low excitation intensities, resulting typically in 1-5 hot electrons per platelet. We observe initial electron cooling in the femtosecond time domain that slows down with decreasing electron energy and is finished within 2 ps. The cooling is considerably faster at cryogenic temperatures than at room temperature, and at least for the systems that we studied, independent of the thickness of the platelets (here 3-5 CdSe units) and the presence of a CdS shell. The cooling rates that we observe are orders of magnitude faster than reported for similar CdSe platelets under strong excitation. Our results are understood by a classic cooling mechanism with emission of longitudinal optical phonons without a significant influence of the surface.
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Affiliation(s)
- Philipp Sippel
- †Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
| | | | | | | | - Thomas Hannappel
- ∥Institut für Physik, Technische Universität Ilmenau, Postfach 100565, D-98684 Ilmenau, Germany
| | - Rainer Eichberger
- †Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
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Tyuterev VG, Zhukov VP, Echenique PM, Chulkov EV. Relaxation of highly excited carriers in wide-gap semiconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:025801. [PMID: 25531041 DOI: 10.1088/0953-8984/27/2/025801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show that the non-equilibrium distributions of electrons and holes have a customary Fermi-like shape with some effective temperature but also possess a high-energy non-Fermian 'tail'. The latter may extend deep into the conduction and valence bands while the Fermi-like component is localized within a small energy range just above the edge of the band gap. The effective temperature, effective chemical potential, and the shape of the high-energy component are governed by the process of electron-phonon interactions as well as by the rates of carrier generation and inter-band radiative recombination.
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Affiliation(s)
- V G Tyuterev
- Tomsk State Pedagogical University, Kievskaya st. 60, Tomsk 634041, Russia. National Research Tomsk State University, Lenin st. 36, Tomsk 634050, Russia. Donostia International Physics Center (DIPC), P Manuel de Lardizabal 4, 20018 San Sebastian, Spain
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Wang Y, Jackson HE, Smith LM, Burgess T, Paiman S, Gao Q, Tan HH, Jagadish C. Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires. NANO LETTERS 2014; 14:7153-7160. [PMID: 25382815 DOI: 10.1021/nl503747h] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.
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Affiliation(s)
- Yuda Wang
- Department of Physics, University of Cincinnati , Cincinnati, Ohio 45221-0011, United States
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Yoshida S, Aizawa Y, Wang ZH, Oshima R, Mera Y, Matsuyama E, Oigawa H, Takeuchi O, Shigekawa H. Probing ultrafast spin dynamics with optical pump-probe scanning tunnelling microscopy. NATURE NANOTECHNOLOGY 2014; 9:588-593. [PMID: 24974938 DOI: 10.1038/nnano.2014.125] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2013] [Accepted: 05/22/2014] [Indexed: 06/03/2023]
Abstract
Studies of spin dynamics in low-dimensional systems are important from both fundamental and practical points of view. Spin-polarized scanning tunnelling microscopy allows localized spin dynamics to be characterized and plays important roles in nanoscale science and technology. However, nanoscale analysis of the ultrafast dynamics of itinerant magnetism, as well as its localized characteristics, should be pursued to advance further the investigation of quantum dynamics in functional structures of small systems. Here, we demonstrate the optical pump-probe scanning tunnelling microscopy technique, which enables the nanoscale probing of spin dynamics with the temporal resolution corresponding, in principle, to the optical pulse width. Spins are optically oriented using circularly polarized light, and their dynamics are probed by scanning tunnelling microscopy based on the optical pump-probe method. Spin relaxation in a single quantum well with a width of 6 nm was observed with a spatial resolution of ∼ 1 nm. In addition to spin relaxation dynamics, spin precession, which provides an estimation of the Landé g factor, was observed successfully.
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Affiliation(s)
- Shoji Yoshida
- Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yuta Aizawa
- Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Zi-han Wang
- Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Ryuji Oshima
- Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan
| | - Yutaka Mera
- Shiga University of Medical Science, Otsu, 520-2192, Japan
| | - Eiji Matsuyama
- Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Haruhiro Oigawa
- Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Osamu Takeuchi
- Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Hidemi Shigekawa
- Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
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Töben L, Gundlach L, Ernstorfer R, Eichberger R, Hannappel T, Willig F, Zeiser A, Förstner J, Knorr A, Hahn PH, Schmidt WG. Femtosecond transfer dynamics of photogenerated electrons at a surface resonance of reconstructed InP(100). PHYSICAL REVIEW LETTERS 2005; 94:067601. [PMID: 15783775 DOI: 10.1103/physrevlett.94.067601] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2004] [Indexed: 05/24/2023]
Abstract
Time-dependent two-photon photoemission spectra are used to resolve the femtosecond dynamics of hot electrons at the energetically lowest surface resonance of reconstructed InP(100). Two different cases are studied, where electrons either are lifted into the surface resonance via a direct optical transition or are captured from bulk states. These data are the first of this kind recorded with a time resolution below 70 fs. The microscopic analysis shows that electron-phonon scattering is a major mechanism for electron transfer between surface and bulk states.
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Affiliation(s)
- L Töben
- Dynamics of Interfacial Reactions-SE 4, Hahn-Meitner-Institute Berlin, Glienicker Strasse 100, 14109 Berlin, Germany
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Hannewald K, Glutsch S, Bechstedt F. Quantum-kinetic theory of hot luminescence from pulse-excited semiconductors. PHYSICAL REVIEW LETTERS 2001; 86:2451-2454. [PMID: 11289952 DOI: 10.1103/physrevlett.86.2451] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2000] [Indexed: 05/23/2023]
Abstract
A theory of time-resolved luminescence from photoexcited semiconductors is presented. It combines quantum kinetics of hot-carrier relaxation and quantum theory of spontaneous emission. Model calculations show the "transfer" of photoluminescence from the initial signal at the pump frequency via subsequent phonon replicas until the buildup of luminescence at the excitonic resonance. Time-resolved photoluminescence is predicted to be a sensitive measure of electron-LO-phonon quantum kinetics and bottleneck effects.
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Affiliation(s)
- K Hannewald
- Friedrich-Schiller-Universität Jena, Institut für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1, D-07743 Jena, Germany
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Langot P, Christofilos D, Tommasi R, Vallée F. Femtosecond investigation of the hot-phonon effect in GaAs at room temperature. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:14487-14493. [PMID: 9985453 DOI: 10.1103/physrevb.54.14487] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cho GC, Dekorsy T, Bakker HJ, Hövel R, Kurz H. Generation and Relaxation of Coherent Majority Plasmons. PHYSICAL REVIEW LETTERS 1996; 77:4062-4065. [PMID: 10062378 DOI: 10.1103/physrevlett.77.4062] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Selbmann PE, Gulia M, Rossi F, Molinari E, Lugli P. Coupled free-carrier and exciton relaxation in optically excited semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:4660-4673. [PMID: 9986425 DOI: 10.1103/physrevb.54.4660] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Langot P, Tommasi R, Vallée F. Nonequilibrium hole relaxation dynamics in an intrinsic semiconductor. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:1775-1784. [PMID: 9986024 DOI: 10.1103/physrevb.54.1775] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Vaughan TA, Nicholas RJ, Langerak CJ, Murdin BN, Pidgeon CR, Mason NJ, Walker PJ. Direct observation of magnetophonon resonances in Landau-level lifetimes of a semiconductor heterostructure. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:16481-16484. [PMID: 9983490 DOI: 10.1103/physrevb.53.16481] [Citation(s) in RCA: 28] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Höpfel RA, Teissl C, Lamprecht KF, Rota L. Intraband inversion due to ultrashort carrier lifetimes in proton-bombarded InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:12581-12584. [PMID: 9982916 DOI: 10.1103/physrevb.53.12581] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Haas S, Rossi F, Kuhn T. Generalized Monte Carlo approach for the study of the coherent ultrafast carrier dynamics in photoexcited semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:12855-12868. [PMID: 9982957 DOI: 10.1103/physrevb.53.12855] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Femtosecond time-resolved photoemission study of hot electron relaxation at the GaAs(100) surface. Chem Phys 1996. [DOI: 10.1016/0301-0104(95)00328-2] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Axt VM, Victor K, Stahl A. Influence of a phonon bath on the hierarchy of electronic densities in an optically excited semiconductor. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7244-7258. [PMID: 9982172 DOI: 10.1103/physrevb.53.7244] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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17
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Supancic P, Hohenester U, Kocevar P, Snoke D, Hannak RM, Rühle WW. Transport analysis of the thermalization and energy relaxation of photoexcited hot electrons in Ge-doped GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7785-7791. [PMID: 9982224 DOI: 10.1103/physrevb.53.7785] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Leitenstorfer A, Fürst C, Laubereau A, Kaiser W, Tränkle G, Weimann G. Femtosecond carrier dynamics in GaAs far from equilibrium. PHYSICAL REVIEW LETTERS 1996; 76:1545-1548. [PMID: 10061750 DOI: 10.1103/physrevlett.76.1545] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Zhu JB, Jeon HI, Suh E, Lee HJ, Hwang YG. Magnetophotoluminescence measurement of the formation time of an exciton in AlxGa1-xAs/GaAs quantum-well structures. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:16353-16356. [PMID: 9981028 DOI: 10.1103/physrevb.52.16353] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Mak G, Rühle WW. Femtosecond carrier dynamics in Ge measured by a luminescence up-conversion technique and near-band-edge infrared excitation. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:11584-11587. [PMID: 9980275 DOI: 10.1103/physrevb.52.r11584] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Zukauskas A, Jursenas S. Relaxation of a hot-electron-two-mode-phonon system in highly excited CdS1-xSex crystals. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:4836-4841. [PMID: 9979352 DOI: 10.1103/physrevb.51.4836] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Raff M, Schütze M, Trappe C, Hannot R, Kurz H. Laser-stimulated nonthermal particle emission from InP and GaAs surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:11031-11036. [PMID: 9975211 DOI: 10.1103/physrevb.50.11031] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Snoke DW. Density dependence of electron scattering at low density. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:11583-11591. [PMID: 9975291 DOI: 10.1103/physrevb.50.11583] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Nintunze N, Osman MA. Ultrafast relaxation of highly photoexcited carriers in p-type and intrinsic GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:10706-10714. [PMID: 9975170 DOI: 10.1103/physrevb.50.10706] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Král K. Hot-electron cooling and hot-phonon generation with collision broadening. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:7988-7991. [PMID: 9974792 DOI: 10.1103/physrevb.50.7988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Young JF, Gong T, Fauchet PM, Kelly PJ. Carrier-carrier scattering rates within nonequilibrium optically injected semiconductor plasmas. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:2208-2215. [PMID: 9976435 DOI: 10.1103/physrevb.50.2208] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Rossi F, Haas S, Kuhn T. Ultrafast relaxation of photoexcited carriers: The role of coherence in the generation process. PHYSICAL REVIEW LETTERS 1994; 72:152-155. [PMID: 10055589 DOI: 10.1103/physrevlett.72.152] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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