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Garcia-Gil A, Biswas S, Roy A, Saladukh D, Raha S, Blon T, Conroy M, Nicolosi V, Singha A, Lacroix LM, Holmes JD. Growth and analysis of the tetragonal (ST12) germanium nanowires. NANOSCALE 2022; 14:2030-2040. [PMID: 35076045 DOI: 10.1039/d1nr07669h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
New semiconducting materials, such as state-of-the-art alloys, engineered composites and allotropes of well-established materials can demonstrate unique physical properties and generate wide possibilities for a vast range of applications. Here we demonstrate, for the first time, the fabrication of a metastable allotrope of Ge, tetragonal germanium (ST12-Ge), in nanowire form. Nanowires were grown in a solvothermal-like single-pot method using supercritical toluene as a solvent, at moderate temperatures (290-330 °C) and a pressure of ∼48 bar. One-dimensional (1D) nanostructures of ST12-Ge were achieved via a self-seeded vapour-liquid-solid (VLS)-like paradigm, with the aid of an in situ formed amorphous carbonaceous layer. The ST12 phase of Ge nanowires is governed by the formation of this carbonaceous structure on the surface of the nanowires and the creation of Ge-C bonds. The crystalline phase and structure of the ST12-Ge nanowires were confirmed by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The nanowires produced displayed a high aspect ratio, with a very narrow mean diameter of 9.0 ± 1.4 nm, and lengths beyond 4 μm. The ST12-Ge nanowire allotrope was found to have a profound effect on the intensity of the light emission and the directness of the bandgap, as confirmed by a temperature-dependent photoluminescence study.
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Affiliation(s)
- Adrià Garcia-Gil
- School of Chemistry & Tyndall National Institute, University College Cork, Cork, T12 YN60, Ireland.
- AMBER Centre, Environmental Research Institute, University College Cork, Cork, T23 XE10, Ireland
| | - Subhajit Biswas
- School of Chemistry & Tyndall National Institute, University College Cork, Cork, T12 YN60, Ireland.
- AMBER Centre, Environmental Research Institute, University College Cork, Cork, T23 XE10, Ireland
| | - Ahin Roy
- School of Chemistry and CRANN & AMBER Centre, Trinity College Dublin, Dublin 2, Ireland
| | - Dzianis Saladukh
- Department of Photonics, Tyndall National Institute, University College Cork, Cork, Ireland
| | - Sreyan Raha
- Department of Physics, Bose Institute, 93/1, A.P.C Road, Kolkata, 700009, India
| | - Thomas Blon
- Université de Toulouse, UMR 5215 INSA, CNRS, UPS, Laboratoire de Physique et Chimie des Nano-Objets, 135 avenue de Rangueil, F-31077 Toulouse cedex 4, France
| | - Michele Conroy
- Department of Materials, Royal School of Mines, Imperial College London, UK
- TEMUL, Department of Physics, Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Valeria Nicolosi
- School of Chemistry and CRANN & AMBER Centre, Trinity College Dublin, Dublin 2, Ireland
| | - Achintya Singha
- Department of Physics, Bose Institute, 93/1, A.P.C Road, Kolkata, 700009, India
| | - Lise-Marie Lacroix
- Université de Toulouse, UMR 5215 INSA, CNRS, UPS, Laboratoire de Physique et Chimie des Nano-Objets, 135 avenue de Rangueil, F-31077 Toulouse cedex 4, France
| | - Justin D Holmes
- School of Chemistry & Tyndall National Institute, University College Cork, Cork, T12 YN60, Ireland.
- AMBER Centre, Environmental Research Institute, University College Cork, Cork, T23 XE10, Ireland
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Djomani D, Capitani F, Brubach JB, Calandrini E, Renard C, Bouchier D, Itié JP, Roy P, Vincent L. Atypical reversed pressure-induced phase transformation in Ge nanowires. NANOTECHNOLOGY 2020; 31:235711. [PMID: 32109895 DOI: 10.1088/1361-6528/ab7b06] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Phase transformations of Ge under compression/decompression cycle at room temperature were studied in a diamond anvil cell (DAC) using in situ synchrotron x-ray diffraction, Raman spectroscopy and near infrared absorption techniques. Upon compression similar behavior is observed in nanowires and in bulk although a higher stability is observed in nanowires. The cubic-diamond phase (Ge-3C), the most energetically favorable phase, transforms into the β-tin metallic phase at high pressure and the reverse Ge-β-tin to Ge-3C transformation is generally inhibited by kinetics when pressure is released. While the transformation in Ge bulk leads mostly to Ge-ST12 phase, the loading/unloading cycle of Ge nanowires in DAC leads back to Ge-3C, exhibiting unprecedented size effects. A comprehensive characterization of the final states is described.
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Affiliation(s)
- Doriane Djomani
- Centre de Nanosciences et Nanotechnologies (C2N), CNRS, Univ. Paris-Sud, Université Paris-Saclay, 10 Boulevard Thomas Gobert, F-91120 Palaiseau, France
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3
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Morozova NV, Korobeinikov IV, Abrosimov NV, Ovsyannikov SV. Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure. CrystEngComm 2020. [DOI: 10.1039/d0ce00672f] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.
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Affiliation(s)
- Natalia V. Morozova
- M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences
- Yekaterinburg 620137
- Russia
| | - Igor V. Korobeinikov
- M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences
- Yekaterinburg 620137
- Russia
| | | | - Sergey V. Ovsyannikov
- Bayerisches Geoinstitut
- Universität Bayreuth
- Bayreuth
- Germany
- Institute for Solid State Chemistry of Ural Branch of Russian Academy of Sciences
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4
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Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n-p Junctions by Applied Stress. Sci Rep 2017; 7:44220. [PMID: 28290495 PMCID: PMC5349603 DOI: 10.1038/srep44220] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2016] [Accepted: 02/06/2017] [Indexed: 12/04/2022] Open
Abstract
Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material.
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Zhao Z, Zhang H, Kim DY, Hu W, Bullock ES, Strobel TA. Properties of the exotic metastable ST12 germanium allotrope. Nat Commun 2017; 8:13909. [PMID: 28045027 PMCID: PMC5216117 DOI: 10.1038/ncomms13909] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2016] [Accepted: 11/09/2016] [Indexed: 11/24/2022] Open
Abstract
The optical and electronic properties of semiconducting materials are of great importance to a vast range of contemporary technologies. Diamond-cubic germanium is a well-known semiconductor, although other 'exotic' forms may possess distinct properties. In particular, there is currently no consensus for the band gap and electronic structure of ST12-Ge (tP12, P43212) due to experimental limitations in sample preparation and varying theoretical predictions. Here we report clear experimental and theoretical evidence for the intrinsic properties of ST12-Ge, including the first optical measurements on bulk samples. Phase-pure bulk samples of ST12-Ge were synthesized, and the structure and purity were verified using powder X-ray diffraction, transmission electron microscopy, Raman and wavelength/energy dispersive X-ray spectroscopy. Optical measurements indicate that ST12-Ge is a semiconductor with an indirect band gap of 0.59 eV and a direct optical transition at 0.74 eV, which is in good agreement with electrical transport measurements and our first-principles calculations.
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Affiliation(s)
- Zhisheng Zhao
- Geophysical Laboratory, Carnegie Institution of Washington, Washington, District of Columbia 20015, USA
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Haidong Zhang
- Geophysical Laboratory, Carnegie Institution of Washington, Washington, District of Columbia 20015, USA
| | - Duck Young Kim
- Geophysical Laboratory, Carnegie Institution of Washington, Washington, District of Columbia 20015, USA
- Center for High Pressure Science and Technology Advanced Research, 1690 Cailun Road, Building 6, Pudong, Shanghai 201203, China
| | - Wentao Hu
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Emma S. Bullock
- Geophysical Laboratory, Carnegie Institution of Washington, Washington, District of Columbia 20015, USA
| | - Timothy A. Strobel
- Geophysical Laboratory, Carnegie Institution of Washington, Washington, District of Columbia 20015, USA
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Serghiou G, Ji G, Koch-Müller M, Odling N, Reichmann HJ, Wright JP, Johnson P. Dense Si(x)Ge(1-x) (0 < x < 1) materials landscape using extreme conditions and precession electron diffraction. Inorg Chem 2014; 53:5656-62. [PMID: 24824209 DOI: 10.1021/ic500416s] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
High-pressure and -temperature experiments on Ge and Si mixtures to 17 GPa and 1500 K allow us to obtain extended Ge-Si solid solutions with cubic (Ia3) and tetragonal (P4(3)2(1)2) crystal symmetries at ambient pressure. The cubic modification can be obtained with up to 77 atom % Ge and the tetragonal modification for Ge concentrations above that. Together with Hume-Rothery criteria, melting point convergence is employed here as a favored attribute for solid solution formation. These compositionally tunable alloys are of growing interest for advanced transport and optoelectronic applications. Furthermore, the work illustrates the significance of employing precession electron diffraction for mapping new materials landscapes resulting from tailored high-pressure and -temperature syntheses.
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Affiliation(s)
- George Serghiou
- School of Engineering and Centre for Materials Science, University of Edinburgh , Kings Buildings, Mayfield Road, EH9 3JL Edinburgh, U.K
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Lai M, Zhang X, Fang F. Nanoindentation-induced phase transformation and structural deformation of monocrystalline germanium: a molecular dynamics simulation investigation. NANOSCALE RESEARCH LETTERS 2013; 8:353. [PMID: 23947487 PMCID: PMC3765234 DOI: 10.1186/1556-276x-8-353] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2013] [Accepted: 08/02/2013] [Indexed: 06/02/2023]
Abstract
Molecular dynamics simulations were conducted to study the nanoindentation of monocrystalline germanium. The path of phase transformation and distribution of transformed region on different crystallographic orientations were investigated. The results indicate the anisotropic behavior of monocrystalline germanium. The nanoindentation-induced phase transformation from diamond cubic structure to β-tin-Ge was found in the subsurface region beneath the tool when indented on the (010) plane, while direct amorphization was observed in the region right under the indenter when the germanium was loaded along the [101] and [111] directions. The transformed phases extend along the < 110 > slip direction of germanium. The depth and shape of the deformed layers after unloading are quite different according to the crystal orientation of the indentation plane. The study results suggest that phase transformation is the dominant mechanism of deformation of monocrystalline germanium film in nanoindentation.
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Affiliation(s)
- Min Lai
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Xiaodong Zhang
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Fengzhou Fang
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
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Wang JT, Chen C, Mizuseki H, Kawazoe Y. Kinetic origin of divergent decompression pathways in silicon and germanium. PHYSICAL REVIEW LETTERS 2013; 110:165503. [PMID: 23679617 DOI: 10.1103/physrevlett.110.165503] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2013] [Indexed: 06/02/2023]
Abstract
Silicon and germanium transform from diamond to β-tin structure under compression, but upon decompression they turn into metastable BC8 Si and ST12 Ge phases, respectively, instead of returning to the lowest-enthalpy diamond structure. Here we explore by first-principles calculations the atomistic mechanism underlying this intriguing phenomenon. We identify a body-centered tetragonal structure in I4(1)/a (C(4h)(6)) symmetry as a precursory state of the BC8 Si phase formed via a double cell bond-rotation mechanism with a low kinetic barrier. Kinetics also play a central role in selecting the decompression pathway in Ge via a trinary cell bond-twisting reconstruction process toward the ST12 Ge phase. In both cases, transformation back to energetically more favorable diamond structure is inhibited by the higher enthalpy barrier. These results explain experimental findings and highlight the kinetic origin of the divergent decompression pathways in Si and Ge.
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Affiliation(s)
- Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
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9
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Li D, Ma Y, Yan J. Comment on "Pressure-dependent metallic and superconducting phases in a germanium artificial metal". PHYSICAL REVIEW LETTERS 2010; 104:139701-139702. [PMID: 20481919 DOI: 10.1103/physrevlett.104.139701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2009] [Indexed: 05/29/2023]
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10
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Ahmad S, Wahab MA. Atomistic study of elastic constants and thermodynamic properties of zinc - blende CuBr. CRYSTAL RESEARCH AND TECHNOLOGY 2009. [DOI: 10.1002/crat.200900034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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11
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Guillaume C, Serghiou G, Thomson A, Morniroli JP, Frost DJ, Odling N, Mezouar M. Tuning between mixing and reactivity in the Ge-Sn system using pressure and temperature. J Am Chem Soc 2009; 131:7550-1. [PMID: 19489640 DOI: 10.1021/ja902466w] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
No bulk GeSn crystal existed prior to this work. Near 10 GPa the two elements resemble each other both electronically and structurally. Synthesis experiments at 10 GPa and 1500 K followed by annealing at 770 K using Ge and Sn starting materials and ex-situ analysis using transmission electron microscopy, scanning electron microscopy, and X-ray diffraction document the recovery of a Ge(0.9)Sn(0.1) solid solution (space group P4(3)2(1)2, a = 6.014 (1) A, c = 7.057 (1) A, Z = 12).
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Affiliation(s)
- Christophe Guillaume
- School of Engineering and Centre for Materials Science, University of Edinburgh, Mayfield Road EH9 3JL UK
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12
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He DW, Zhang FX, Zhang M, Liu RP, Liu RP, Xu YF, Wang WK, Wang WK. Phase Evolution in Solidification Process of Germanium at High Pressure. CRYSTAL RESEARCH AND TECHNOLOGY 1998. [DOI: 10.1002/(sici)1521-4079(1998)33:1<43::aid-crat43>3.0.co;2-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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13
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Muñoz A, Rodríguez-Hernández P, Mujica A. Ground-state properties and high-pressure phase of beryllium chalcogenides BeSe, BeTe, and BeS. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11861-11864. [PMID: 9985015 DOI: 10.1103/physrevb.54.11861] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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14
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Panda BK, Fung S, Beling CD. Electron-positron momentum density in diamond, Si, and Ge. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:1251-1259. [PMID: 9983582 DOI: 10.1103/physrevb.53.1251] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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15
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Mujica A, Needs RJ, Muñoz A. First-principles pseudopotential study of the phase stability of the III-V semiconductors GaAs and AlAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:8881-8892. [PMID: 9979878 DOI: 10.1103/physrevb.52.8881] [Citation(s) in RCA: 48] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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16
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Piltz RO, Maclean JR, Clark SJ, Ackland GJ, Hatton PD, Crain J. Structure and properties of silicon XII: A complex tetrahedrally bonded phase. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:4072-4085. [PMID: 9981533 DOI: 10.1103/physrevb.52.4072] [Citation(s) in RCA: 91] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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17
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Zhang FX, Wang WK. Crystal structure of germanium quenched from the melt under high pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:3113-3116. [PMID: 9981426 DOI: 10.1103/physrevb.52.3113] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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18
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Moll N, Bockstedte M, Fuchs M, Pehlke E, Scheffler M. Application of generalized gradient approximations: The diamond- beta -tin phase transition in Si and Ge. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:2550-2556. [PMID: 9981322 DOI: 10.1103/physrevb.52.2550] [Citation(s) in RCA: 40] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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19
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Filipponi A. Short-range order in crystalline, amorphous, liquid, and supercooled germanium probed by x-ray-absorption spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:12322-12336. [PMID: 9978002 DOI: 10.1103/physrevb.51.12322] [Citation(s) in RCA: 63] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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20
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Needs RJ, Mujica A. First-principles pseudopotential study of the structural phases of silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:9652-9660. [PMID: 9977630 DOI: 10.1103/physrevb.51.9652] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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21
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Crain J, Ackland GJ, Maclean JR, Piltz RO, Hatton PD, Pawley GS. Reversible pressure-induced structural transitions between metastable phases of silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:13043-13046. [PMID: 9975487 DOI: 10.1103/physrevb.50.13043] [Citation(s) in RCA: 68] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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22
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Crain J, Piltz RO, Ackland GJ, Clark SJ, Payne MC, Milman V, Lin JS, Hatton PD, Nam YH. Tetrahedral structures and phase transitions in III-V semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:8389-8401. [PMID: 9974857 DOI: 10.1103/physrevb.50.8389] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Hull S, Keen DA. High-pressure polymorphism of the copper(I) halides: A neutron-diffraction study to ~10 GPa. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:5868-5885. [PMID: 9976955 DOI: 10.1103/physrevb.50.5868] [Citation(s) in RCA: 126] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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