Lifetime effect on the multiplet structure of 4d x-ray-photoemission spectra in heavy rare-earth elements

Revealing Site Occupancy in a Complex Oxide: Terbium Iron Garnet

Complex oxide films stabilized by epitaxial growth can exhibit large populations of point defects which have important effects on their properties. The site occupancy of pulsed laser-deposited epitaxial terbium iron garnet (TbIG) films with excess terbium (Tb) is analyzed, in which the terbium:iron (Tb:Fe)ratio is 0.86 compared to the stoichiometric value of 0.6. The magnetic properties of the TbIG are sensitive to site occupancy, exhibiting a higher compensation temperature (by 90 K) and a lower Curie temperature (by 40 K) than the bulk Tb₃ Fe₅ O₁₂ garnet. Data derived from X-ray core-level spectroscopy, magnetometry, and molecular field coefficient modeling are consistent with occupancy of the dodecahedral sites by Tb³⁺ , the octahedral sites by Fe³⁺ , Tb³⁺ and vacancies, and the tetrahedral sites by Fe³⁺ and vacancies. Energy dispersive X-ray spectroscopy in a scanning transmission electron microscope provides direct evidence of Tb_Fe antisites. A small fraction of Fe²⁺ is present, and oxygen vacancies are inferred to be present to maintain charge neutrality. Variation of the site occupancies provides a path to considerable manipulation of the magnetic properties of epitaxial iron garnet films and other complex oxides, which readily accommodate stoichiometries not found in their bulk counterparts.

The Local and Electronic Structure Study of LuxGd1-xVO4 (0 ≤ x ≤ 1) Solid Solution Nanocrystals

Rare-earth-doped mixed crystals have demonstrated tunable optical properties, and it is of great importance to study the structural characteristics of the mixed-crystal hosts. Herein, Lu_xGd_1-xVO₄ (0 ≤ x ≤ 1) solid solution nanocrystals were synthesized by a modified sol-gel method, with a pure crystalline phase and element composition. The X-ray diffraction (XRD) and Rietveld refinement results showed that Lu_xGd_1-xVO₄ nanocrystals are continuous solid solutions with a tetragonal zircon phase (space group I4₁/amd) and the lattice parameters strictly follow Vegard's law. The detailed local structures were studied by extended X-ray absorption fine structure (EXAFS) spectra, which revealed that the average bond length of Gd-O fluctuates and decreases, while the average bond length of Lu-O gradually decreases with the increase in Lu content. Furthermore, the binding energy differences of core levels indicate that the covalent V-O bond is relatively stable, while the ionicity of the Lu-O bond decreases with the increasing x value, and the ionicity of the Gd-O bond fluctuates with small amplitude. The valence band structures were further confirmed by the first-principles calculations, indicating that the valence band is contributed to by the O 2p nonbonding state, localized Gd 4f and Lu 4f states, and the hybridized states between the bonding O 2p and V 3d. The binding energies of the Lu core and the valence levels tend to decrease gradually with the increase in Lu content. This work provides insight into the structural features of mixed-crystal hosts, which have been developed in recent years to improve laser performance by providing different positions for active ions to obtain inhomogeneous broadening spectra.

Modification of spin-ice physics in Ho2Ti2O7 thin films

We present an extensive study on the effect of substrate orientation, strain, stoichiometry, and defects on spin-ice physics in Ho 2 Ti 2 O 7 thin films grown onto yttria-stabilized-zirconia substrates. We find that growth in different orientations produces different strain states in the films. All films exhibit similar c -axis lattice parameters for their relaxed portions, which are consistently larger than the bulk value of 10.1 Å. Transmission electron microscopy reveals antisite disorder and growth defects to be present in the films, but evidence of stuffing is not observed. The amount of disorder depends on the growth orientation, with the (110) film showing the least. Magnetization measurements at 1.8 K show the expected magnetic anisotropy and saturation magnetization values associated with a spin ice for all orientations; shape anisotropy is apparent when comparing in- and out-of-plane directions. Significantly, only the (110)-oriented films display the hallmark spin-ice plateau state in magnetization, albeit less well defined compared to the plateau observed in a single crystal. Neutron-scattering maps on the more disordered (111)-oriented films show the Q = 0 phase previously observed in bulk materials, but the Q = X phase giving the plateau state remains elusive. We conclude that the spin-ice physics in thin films is modified by defects and strain, leading to a reduction in the temperature at which correlations drive the system into the spin-ice state.

New Lutetium Oxide: Electrically Conducting Rock-Salt LuO Epitaxial Thin Film

C-rare earth structure lutetium sesquioxide Lu₂O₃ has been recognized as a high-k widegap insulator with closed shell Lu³⁺ ions. In this study, rock-salt structure lutetium monoxide LuO with unusual valence of Lu²⁺ (4f¹⁴5d¹), previously known as the gaseous phase, was synthesized as an epitaxial thin film by the pulsed laser deposition method. In contrast with transparent and highly insulating Lu₂O₃, LuO possessed a dark-brown color and high electrical conductivity concomitant with strong spin-orbit coupling as a manifestation of Lu 5d electron carriers.

Dysprosium electrodeposition from a hexaalkylguanidinium-based ionic liquid

The rare-earth element dysprosium (Dy) is an important additive that increases the magnetocrystalline anisotropy of neodymium magnets and additionally prevents from demagnetizing at high temperatures. Therefore, it is one of the most important elements for high-tech industries and is mainly used in permanent magnetic applications, for example in electric vehicles, industrial motors and direct-drive wind turbines. In an effort to develop a more efficient electrochemical technique for depositing Dy on Nd-magnets in contrast to commonly used costly physical vapor deposition, we investigated the electrochemical behavior of dysprosium(iii) trifluoromethanesulfonate in a custom-made guanidinium-based room-temperature ionic liquid (RTIL). We first examined the electrodeposition of Dy on an Au(111) model electrode. The investigation was carried out by means of cyclic voltammetry (CV) and X-ray photoelectron spectroscopy (XPS). The initial stages of metal deposition were followed by in situ scanning tunneling microscopy (STM). CV measurements revealed a large cathodic reduction peak, which corresponds to the growth of monoatomic high islands, based on STM images taken during the initial stages of deposition. XPS identified these deposited islands as dysprosium. A similar reduction peak was also observed on an Nd-Fe-B substrate, and positively identified as deposited Dy using XPS. Finally, we varied the concentration of the Dy precursor, electrolyte flow and temperature during Dy deposition and demonstrated that each of these parameters could be used to increase the thickness of the Dy deposit, suggesting that these parameters could be tuned simultaneously in a temperature-controlled flow cell to enhance the thickness of the Dy layer.

Sonochemical preparation of a ytterbium oxide/reduced graphene oxide nanocomposite for supercapacitors with enhanced capacitive performance

Decoration of graphene with different nanostructures can result in fundamental advancements in versatile technologies, especially in the fast growing fields of catalysts, sensors and energy storage.

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

In situ Yb-doped amorphous carbon thin films were grown on Si substrates at low temperatures (<200 °C) by a simple one-step RF-PEMOCVD system as a potential photonic material for direct integration with Si CMOS back end-of-line processing. Room temperature photoluminescence around 1 µm was observed via direct incorporation of optically active Yb³⁺ ions from the selected Yb(fod)₃ metal-organic compound. The partially fluorinated Yb(fod)₃ compound assists the suppression of photoluminescence quenching by substitution of C-H with C-F bonds. A four-fold enhancement of Yb photoluminescence was demonstrated via deuteration of the a-C host. The substrate temperature greatly influences the relative deposition rate of the plasma dissociated metal-organic species, and hence the concentration of the various elements. Yb and F incorporation are promoted at lower substrate temperatures, and suppressed at higher substrate temperatures. O concentration is slightly elevated at higher substrate temperatures. Photoluminescence was limited by the concentration of Yb within the film, the concentration of Yb ions in the +3 state, and the relative amount of quenching due to the various de-excitation pathways associated with the vibrational modes of the host a-C network. The observed wide full-width-at-half-maximum photoluminescence signal is a result of the variety of local bonding environments due to the a-C matrix, and the bonding of the Yb³⁺ ions to O and/or F ions as observed in the X-ray photoelectron spectroscopy analyses.

Unravelling the role of the central metal ion in the electronic structure of tris(8-hydroxyquinoline) metal chelates: photoemission spectroscopy and hybrid functional calculations

The electronic structures of tris(8-hydroxyquinolinato)-erbium(III) (ErQ(3)) and tris(8-hydroxyquinolinato)-aluminum(III) (AlQ(3)) have been studied by means of core level and valence band photoemission spectroscopy with the theoretical support of hybrid Heyd-Scuseria-Ernzerhof density functional theory, to investigate the role played by the central metal atom. A lower binding energy (0.2 eV and 0.3 eV, respectively) of the O 1s and N 1s core levels has been observed for ErQ(3) with respect to AlQ(3). Differences in the valence band spectra, mainly related to the first two peaks next to the highest occupied molecular orbital (HOMO), have been ascribed to an energetic shift (to 0.4 eV lower energies for ErQ(3)) of the σ molecular orbital between the oxygen atoms and the central metal atom. A lower (by 0.5 eV) ionization energy has been measured for the ErQ(3). The interpretation of these results is based on a reduced interaction between the central metal atom and the ligands in ErQ(3), with increased electronic charge around the ligands, due to the higher ionic radius and the lower electronegativity of Er with respect to Al.

Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface

A SrF(2) ultrathin barrier layer on Si(001) is used to form a sharp interface and block reactivity and intermixing between the semiconductor and a Yb(2)O(3) overlayer. Yb(2)O(3)/Si(001) and Yb(2)O(3)/SrF(2)/Si(001) interfaces grown in ultra high vacuum by molecular beam epitaxy are studied by photoemission and x-ray absorption fine structure. Without the fluoride interlayer, Yb(2)O(3)/Si(001) presents an interface reacted region formed by SiO(x) and/or silicate compounds, which is about 9 Å thick and increases up to 14-15 Å after annealing at 500-700 °C. A uniform single layer of SrF(2) molecules blocks intermixing and reduces the oxidized Si region to 2.4 Å after deposition and to 3.5 Å after annealing at 500 °C. In both cases we estimate a conduction band offset and a valence band offset of ∼ 1.7 eV and 2.4 eV between the oxide and Si, respectively. X-ray absorption fine structure measurements at the Yb L(III) edge suggest that the Yb oxide films exhibit a significant degree of static disorder with and without the fluoride barrier. Sr K edge measurements indicate that the ultrathin fluoride films are reacted, with the formation of bonds between Si and Sr; the Sr-Sr and Sr-F interatomic distances in the ultrathin fluoride barrier film are relaxed to the bulk value.

Coexistence of strongly mixed-valence and heavy-fermion character in SmOs4Sb12 studied by soft- and hard-X-ray spectroscopy

Sm-based heavy-fermion compound SmOs4Sb12 has been investigated by soft x-ray (hnu=1070-1600 eV) and hard x-ray (HX; hnu=7932 eV) spectroscopy. The HX photoemission spectroscopy clearly demonstrates that the strongly mixed-valence state and the heavy-fermion state coexist in the bulk. It is found that the Sm valence decreases below 100 K, indicating that the Kondo coherence develops with approaching the proposed Kondo temperature. Our theoretical analyses suggest that the origin of the coexistence in SmOs4Sb12 is the coincidence of two conditions, namely, (i) the energy difference between Sm divalent and trivalent states is very small and (ii) the hybridization between Sm 4f and conduction electrons is weak.

Photoemission studies and electronic structure of U(2)T(2)In (T = Ni, Rh, Pt) compounds

The electronic structure of the tetragonal U(2)T(2)In (T = Ni, Rh, Pt) compounds in the paramagnetic phase were studied by x-ray photoelectron spectroscopy (XPS). Both valence band and core level spectra were analysed. The experimental data are compared with the calculations of the density of states using the tight-binding linear muffin-tin orbital method (TB-LMTO) and full-potential local-orbital full-relativistic method (FPLO). The calculated data reveal a dominant U 5f electron character for the states near the Fermi level E(F) with a small contribution from U 5d, Ni 3d, Rh 4d, Pt 5d and In 5p states. The XPS valence bands of these compounds are characterized by a sharp peak of the U 5f states near the Fermi level (E(F)) and broad peaks of the Ni 3d, Rh 4d and Pt 5d states at about 2.6, 3.2 and 4.0 eV below E(F), respectively. The small change in the position of the U 5f peak with respect to E(F) is -0.35 eV for T = Ni and -0.15 eV for T = Rh and Pt. A satellite between the Ni 2p(1/2) and Ni 2p(3/2) peaks is visible, suggesting that the Ni 3d band is not completely filled, and the existence of a small induced magnetic moment on the Ni atoms cannot be ruled out.