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Jia Z, Wu Q, Jin X, Huang S, Li J, Yang M, Huang H, Yao J, Xu J. Highly responsive tellurium-hyperdoped black silicon photodiode with single-crystalline and uniform surface microstructure. OPTICS EXPRESS 2020; 28:5239-5247. [PMID: 32121748 DOI: 10.1364/oe.385887] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2019] [Accepted: 01/26/2020] [Indexed: 06/10/2023]
Abstract
Femtosecond laser hyperdoped silicon, also known as the black silicon (BS), has a large number of defects and damages, which results in unstable and undesirable optical and electronic properties in photonics platform and optoelectronic integrated circuits (OEICs). We propose a novel method that elevates the substrate temperature during the femtosecond laser irradiation and fabricates tellurium (Te) hyperdoped BS photodiodes with high responsivity and low dark current. At 700 K, uniform microstructures with single crystalline were formed in the hyperdoped layer. The velocity of cooling and resolidification is considered as an important role in the formation of a high-quality crystal after irradiation by the femtosecond laser. Because of the high crystallinity and the Te hyperdoping, a photodiode made from BS processed at 700 K has a maximum responsivity of 120.6 A/W at 1120 nm, which is far beyond the previously reported Te-doped silicon photodetectors. In particular, the responsivity of the BS photodiode at 1300 nm and 1550 nm is 43.9 mA/W and 56.8 mA/W with low noise, respectively, which is valuable for optical communication and interconnection. Our result proves that hyperdoping at a high substrate temperature has great potential for femtosecond-laser-induced semiconductor modification, especially for the fabrication of photodetectors in the silicon-based photonic integration circuits.
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Dhakal KP, Kim H, Lee S, Kim Y, Lee J, Ahn JH. Probing the upper band gap of atomic rhenium disulfide layers. LIGHT, SCIENCE & APPLICATIONS 2018; 7:98. [PMID: 30510694 PMCID: PMC6262017 DOI: 10.1038/s41377-018-0100-3] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2018] [Revised: 11/04/2018] [Accepted: 11/12/2018] [Indexed: 05/30/2023]
Abstract
Here, we investigate the ultrafast carrier dynamics and electronic states of exfoliated ReS2 films using time-resolved second harmonic generation (TSHG) microscopy and density functional theory (DFT) calculations. The second harmonic generation (SHG) of layers with various thicknesses is probed using a 1.19-eV beam. Up to ~13 nm, a gradual increment is observed, followed by a decrease caused by bulk interferometric light absorption. The addition of a pump pulse tuned to the exciton band gap (1.57 eV) creates a decay-to-rise TSHG profile as a function of the probe delay. The power and thickness dependencies indicate that the electron-hole recombination is mediated by defects and surfaces. The two photon absorptions of 2.38 eV in the excited state that are induced by pumping from 1.57 to 1.72 eV are restricted because these transitions highly correlate with the forbidden d-d intrasubshell orbital transitions. However, the combined usage of a frequency-doubled pump (2.38 eV) with wavelength-variant SHG probes (2.60-2.82 eV) allows us to vividly monitor the variations in TSHG profiles from decay-to-rise to rise-to-decay, which imply the existence of an additional electron absorption state (s-orbital) at an approximate distance of 5.05 eV from the highest occupied molecular orbital states. This observation was critically examined by considering the allowance of each electronic transition and a small upper band gap (~0.5 eV) using modified DFT calculations.
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Affiliation(s)
- Krishna P. Dhakal
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722 Republic of Korea
| | - Hyunmin Kim
- Companion Diagnostics & Medical Technology Research Group, DGIST, Daegu, 42988 Republic of Korea
| | - Seonwoo Lee
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722 Republic of Korea
| | - Youngjae Kim
- Department of Emerging Materials Science, DGIST, Daegu, 42988 Republic of Korea
| | - JaeDong Lee
- Department of Emerging Materials Science, DGIST, Daegu, 42988 Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722 Republic of Korea
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Chen NK, Han D, Li XB, Liu F, Bang J, Wang XP, Chen QD, Wang HY, Zhang S, Sun HB. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Phys Chem Chem Phys 2017; 19:24735-24741. [DOI: 10.1039/c7cp03103c] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Electronic excitation induced stress and force may provide a new route to manipulate the structure of materials using ultrafast lasers.
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Hu H, Ding H, Liu F. Quantum Hooke's law to classify pulse laser induced ultrafast melting. Sci Rep 2015; 5:8212. [PMID: 25645258 PMCID: PMC4314650 DOI: 10.1038/srep08212] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2014] [Accepted: 12/15/2014] [Indexed: 11/12/2022] Open
Abstract
Ultrafast crystal-to-liquid phase transition induced by femtosecond pulse laser excitation is an interesting material's behavior manifesting the complexity of light-matter interaction. There exist two types of such phase transitions: one occurs at a time scale shorter than a picosecond via a nonthermal process mediated by electron-hole plasma formation; the other at a longer time scale via a thermal melting process mediated by electron-phonon interaction. However, it remains unclear what material would undergo which process and why? Here, by exploiting the property of quantum electronic stress (QES) governed by quantum Hooke's law, we classify the transitions by two distinct classes of materials: the faster nonthermal process can only occur in materials like ice having an anomalous phase diagram characterized with dTm/dP < 0, where Tm is the melting temperature and P is pressure, above a high threshold laser fluence; while the slower thermal process may occur in all materials. Especially, the nonthermal transition is shown to be induced by the QES, acting like a negative internal pressure, which drives the crystal into a “super pressing” state to spontaneously transform into a higher-density liquid phase. Our findings significantly advance fundamental understanding of ultrafast crystal-to-liquid phase transitions, enabling quantitative a priori predictions.
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Affiliation(s)
- Hao Hu
- 1] Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an710054, China [2] Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT84112, USA
| | - Hepeng Ding
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT84112, USA
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT84112, USA
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Mannebach EM, Duerloo KAN, Pellouchoud LA, Sher MJ, Nah S, Kuo YH, Yu Y, Marshall AF, Cao L, Reed EJ, Lindenberg AM. Ultrafast electronic and structural response of monolayer MoS2 under intense photoexcitation conditions. ACS NANO 2014; 8:10734-42. [PMID: 25244589 DOI: 10.1021/nn5044542] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
We report on the dynamical response of single layer transition metal dichalcogenide MoS2 to intense above-bandgap photoexcitation using the nonlinear-optical second order susceptibility as a direct probe of the electronic and structural dynamics. Excitation conditions corresponding to the order of one electron-hole pair per unit cell generate unexpected increases in the second harmonic from monolayer films, occurring on few picosecond time-scales. These large amplitude changes recover on tens of picosecond time-scales and are reversible at megahertz repetition rates with no photoinduced change in lattice symmetry observed despite the extreme excitation conditions.
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Affiliation(s)
- Ehren M Mannebach
- Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States
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LaHaye NL, Harilal SS, Diwakar PK, Hassanein A, Kulkarni P. The effect of ultrafast laser wavelength on ablation properties and implications on sample introduction in inductively coupled plasma mass spectrometry. JOURNAL OF APPLIED PHYSICS 2013; 114:023103. [PMID: 26640294 PMCID: PMC4668957 DOI: 10.1063/1.4812491] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We investigated the role of femtosecond (fs) laser wavelength on laser ablation (LA) and its relation to laser generated aerosol counts and particle distribution, inductively coupled plasma-mass spectrometry (ICP-MS) signal intensity, detection limits, and elemental fractionation. Four different NIST standard reference materials (610, 613, 615, and 616) were ablated using 400 nm and 800 nm fs laser pulses to study the effect of wavelength on laser ablation rate, accuracy, precision, and fractionation. Our results show that the detection limits are lower for 400 nm laser excitation than 800 nm laser excitation at lower laser energies but approximately equal at higher energies. Ablation threshold was also found to be lower for 400 nm than 800 nm laser excitation. Particle size distributions are very similar for 400 nm and 800 nm wavelengths; however, they differ significantly in counts at similar laser fluence levels. This study concludes that 400 nm LA is more beneficial for sample introduction in ICP-MS, particularly when lower laser energies are to be used for ablation.
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Affiliation(s)
- N L LaHaye
- Center for Materials under Extreme Environment, School of Nuclear Engineering Purdue University, West Lafayette, Indiana 47907, USA
| | - S S Harilal
- Center for Materials under Extreme Environment, School of Nuclear Engineering Purdue University, West Lafayette, Indiana 47907, USA
| | - P K Diwakar
- Center for Materials under Extreme Environment, School of Nuclear Engineering Purdue University, West Lafayette, Indiana 47907, USA
| | - A Hassanein
- Center for Materials under Extreme Environment, School of Nuclear Engineering Purdue University, West Lafayette, Indiana 47907, USA
| | - P Kulkarni
- Centers for Disease Control and Prevention, National Institute of Occupational Safety and Health, Cincinnati, Ohio 45213, USA
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Li XB, Liu XQ, Liu X, Han D, Zhang Z, Han XD, Sun HB, Zhang SB. Role of electronic excitation in the amorphization of Ge-Sb-Te alloys. PHYSICAL REVIEW LETTERS 2011; 107:015501. [PMID: 21797549 DOI: 10.1103/physrevlett.107.015501] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2010] [Indexed: 05/31/2023]
Abstract
First-principles molecular dynamics simulation reveals the effects of electronic excitation in the amorphization of Ge-Sb-Te. The excitation makes the phase change an element-selective process, lowers the critical amorphization temperature considerably, for example, to below 700 K at a 9% excitation, and reduces the atomic diffusion coefficient with respect to that of melt by at least 1 order of magnitude. Noticeably, the resulting structure has fewer wrong bonds and significantly increased phase-change reversibility. Our results point to a new direction in manipulating ultrafast phase-change processes with improved controllability.
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Affiliation(s)
- Xian-Bin Li
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China
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Sundaram SK, Mazur E. Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses. NATURE MATERIALS 2002; 1:217-224. [PMID: 12618781 DOI: 10.1038/nmat767] [Citation(s) in RCA: 222] [Impact Index Per Article: 10.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Soon after it was discovered that intense laser pulses of nanosecond duration from a ruby laser could anneal the lattice of silicon, it was established that this so-called pulsed laser annealing is a thermal process. Although the radiation energy is transferred to the electrons, the electrons transfer their energy to the lattice on the timescale of the excitation. The electrons and the lattice remain in equilibrium and the laser simply 'heats' the solid to the melting temperature within the duration of the laser pulse. For ultrashort laser pulses in the femtosecond regime, however, thermal processes (which take several picoseconds) and equilibrium thermodynamics cannot account for the experimental data. On excitation with femtosecond laser pulses, the electrons and the lattice are driven far out of equilibrium and disordering of the lattice can occur because the interatomic forces are modified due to the excitation of a large (10% or more) fraction of the valence electrons to the conduction band. This review focuses on the nature of the non-thermal transitions in semiconductors under femtosecond laser excitation.
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Affiliation(s)
- S K Sundaram
- Pacific Northwest National Laboratory, Richland, Washington 99352, USA.
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Interaction of Ultrashort Laser Pulses with Solids. SPECTROSCOPY AND DYNAMICS OF COLLECTIVE EXCITATIONS IN SOLIDS 1997. [DOI: 10.1007/978-1-4615-5835-4_14] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2023]
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Shumay IL, Höfer U. Phase transformations of an InSb surface induced by strong femtosecond laser pulses. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:15878-15884. [PMID: 9983426 DOI: 10.1103/physrevb.53.15878] [Citation(s) in RCA: 72] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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