Origin of characteristic subgap optical absorption in CVD diamond films

Spectroscopic Ellipsometry of Nanocrystalline Diamond Film Growth

With the retention of many of the unrivaled properties of bulk diamond but in thin-film form, nanocrystalline diamond (NCD) has applications ranging from micro-/nano-electromechanical systems to tribological coatings. However, with Young's modulus, transparency, and thermal conductivity of films all dependent on the grain size and nondiamond content, compositional and structural analysis of the initial stages of diamond growth is required to optimize growth. Spectroscopic ellipsometry (SE) has therefore been applied to the characterization of 25-75 nm thick NCD samples atop nanodiamond-seeded silicon with a clear distinction between the nucleation and bulk growth regimes discernable. The resulting presence of an interfacial carbide and peak in nondiamond carbon content upon coalescence is correlated with Raman spectroscopy, whereas the surface roughness and microstructure are in accordance with values provided by atomic force microscopy. As such, SE is demonstrated to be a powerful technique for the characterization of the initial stages of growth and hence the optimization of seeding and nucleation within films to yield high-quality NCD.

Contactless photoconductance study on undoped and doped nanocrystalline diamond films

Hydrogen and oxygen surface-terminated nanocrystalline diamond (NCD) films are studied by the contactless time-resolved microwave conductivity (TRMC) technique and X-ray photoelectron spectroscopy (XPS). The optoelectronic properties of undoped NCD films are strongly affected by the type of surface termination. Upon changing the surface termination from oxygen to hydrogen, the TRMC signal rises dramatically. For an estimated quantum yield of 1 for sub-bandgap optical excitation the hole mobility of the hydrogen-terminated undoped NCD was found to be ∼0.27 cm(2)/(V s) with a lifetime exceeding 1 μs. Assuming a similar mobility for the oxygen-terminated undoped NCD a lifetime of ∼100 ps was derived. Analysis of the valence band spectra obtained by XPS suggests that upon oxidation of undoped NCD the surface Fermi level shifts (toward an increased work function). This shift originates from the size and direction of the electronic dipole moment of the surface atoms, and leads to different types of band bending at the diamond/air interface in the presence of a water film. In the case of boron-doped NCD no shift of the work function is observed, which can be rationalized by pinning of the Fermi level. This is confirmed by TRMC results of boron-doped NCD, which show no dependency on the surface termination. We suggest that photoexcited electrons in boron-doped NCD occupy nonionized boron dopants, leaving relatively long-lived mobile holes in the valence band.