Electrical control of spin relaxation in a quantum dot

Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot

We report the preparation and readout of multielectron high-spin states, a three-electron quartet, and a four-electron quintet, in a gate-defined GaAs/AlGaAs single quantum dot using spin filtering by quantum Hall edge states coupled to the dot. The readout scheme consists of mapping from multielectron to two-electron spin states and a subsequent two-electron spin readout, thus obviating the need to resolve dense multielectron energy levels. Using this technique, we measure the relaxations of the high-spin states and find them to be an order of magnitude faster than those of low-spin states. Numerical calculations of spin relaxation rates using the exact diagonalization method agree with the experiment. The technique developed here offers a new tool for the study and application of high-spin states in quantum dots.

Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots

We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength that allows us to extract the g factor. The measured g factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g factor. Experimental detection and identification of minute band-structure effects in the g factor is of significance for spin qubits in GaAs quantum dots.

Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors

Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin-blockade and investigate the magnetic field dependence of the leakage current. This enables attributes that are key to hole spin state control to be determined, where we calculate a tunnel couplingt_cof 57μeV and a short spin-orbit lengthl_SOof 250 nm. The demonstrated strong spin-orbit interaction at the interface when using disorder based quantum dots supports electric-field mediated control. These results provide further motivation that a readily scalable platform such as industry standard silicon technology can be used to investigate interactions which are useful for quantum information processing.

Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot," the electron spin relaxation rate (T_{1}^{-1}) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2±1.6  μeV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.5±0.7  μeV.

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Once the periodic properties of elements were unveiled, chemical behaviour could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in semiconductor materials disrupt this analogy, so real devices seldom display a systematic many-electron arrangement. We demonstrate here an electrostatically confined quantum dot that reveals a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. Various fillings containing a single valence electron-namely 1, 5, 13 and 25 electrons-are found to be potential qubits. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR), leading to faster Rabi rotations and higher fidelity single qubit gates at higher shell states. We investigate the impact of orbital excitations on single qubits as a function of the dot deformation and exploit it for faster qubit control.

Quantum non-demolition measurement of an electron spin qubit

Measurements of quantum systems inevitably involve disturbance in various forms. Within the limits imposed by quantum mechanics, there exists an ideal projective measurement that does not introduce a back action on the measured observable, known as a quantum non-demolition (QND) measurement^1,2. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defined quantum dot. We entangle the single spin with a two-electron, singlet-triplet ancilla qubit via the exchange interaction^3,4 and then read out the ancilla in a single shot. This procedure realizes a disturbance-free projective measurement of the single spin at a rate two orders of magnitude faster than its relaxation. The QND nature of the measurement protocol^5,6 enables enhancement of the overall measurement fidelity by repeating the protocol. We demonstrate a monotonic increase of the fidelity over 100 repetitions against arbitrary input states. Our analysis based on statistical inference is tolerant to the presence of the relaxation and dephasing. We further exemplify the QND character of the measurement by observing spontaneous flips (quantum jumps)⁷ of a single electron spin. Combined with the high-fidelity control of spin qubits^8-13, these results will allow for various measurement-based quantum state manipulations including quantum error correction protocols¹⁴.

Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields

We show that in-plane magnetic-field-assisted spectroscopy allows extraction of the in-plane orientation and full 3D size parameters of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with subnanometer precision. The method is based on measuring the orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. From such data, we deduce the microscopic confinement potential landscape and quantify the degree by which it differs from a harmonic oscillator potential. The spectroscopy is used to validate shape manipulation with gate voltages, agreeing with expectations from the gate layout. Our measurements demonstrate a versatile tool for quantum dots with one dominant axis of strong confinement.

Uniaxial Dynamical Decoupling for an Open Quantum System

Dynamical decoupling (DD) is an active and effective method for suppressing decoherence of a quantum system from its environment. In contrast to the nominal biaxial DD, this work presents a uniaxial decoupling protocol that requires a significantly reduced number of pulses and a much lower bias field satisfying the "magic" condition. We show this uniaxial DD protocol works effectively in a number of model systems of practical interest, e.g., a spinor atomic Bose-Einstein condensate in stray magnetic fields (classical noise), or an electron spin coupled to nuclear spins (quantum noise) in a semiconductor quantum dot. It requires only half the number of control pulses and a 10-100 times lower bias field for decoupling as normally employed in the above mentioned illustrative examples, and the overall efficacy is robust against rotation errors of the control pulses. The uniaxial DD protocol we propose shines new light on coherent controls in quantum computing and quantum information processing, quantum metrology, and low field nuclear magnetic resonance.

Toward high-fidelity coherent electron spin transport in a GaAs double quantum dot

In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaAs double quantum dot. Our study examines fidelity loss in spin transport from multiple perspectives. We first study incoherent fidelity loss due to hyperfine and spin-orbit interaction. We calculate fidelity loss due to the random Overhauser field from hyperfine interaction, and spin relaxation rate due to spin-orbit interaction in a wide range of experimental parameters with a focus on the occurrence of spin hot spots. A safe parameter regime is identified in order to avoid these spin hot spots. We then analyze systematic errors due to non-adiabatic transitions in the Landau-Zener process of sweeping the interdot detuning, and propose a scheme to take advantage of possible Landau-Zener-Stückelberg interference to achieve high-fidelity spin transport at a higher speed. At last, we study another systematic error caused by the correction to the electron g-factor from the double dot potential, which can lead to a notable phase error. In all, our results should provide a useful guidance for future experiments on coherent electron spin transport.

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

Understanding and control of the spin relaxation time T1 is among the key challenges for spin-based qubits. A larger T1 is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high in-plane magnetic fields B, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteristic dependence T1 ∝ B-5 and pronounced B-field anisotropy were already confirmed experimentally. However, it has also been predicted 15 years ago that at low enough fields, the spin-orbit interaction is replaced by the coupling to the nuclear spins, where the relaxation becomes isotropic, and the scaling changes to T1 ∝ B-3. Here, we establish these predictions experimentally, by measuring T1 over an unprecedented range of magnetic fields-made possible by lower temperature-and report a maximum T1 = 57 ± 15 s at the lowest fields, setting a record electron spin lifetime in a nanostructure.

Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot

The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin lifetimes of 10 s are achieved at a tunneling rate close to 1 kHz.

Three-electron spin qubits

The goal of this article is to review the progress of three-electron spin qubits from their inception to the state of the art. We direct the main focus towards the exchange-only qubit (Bacon et al 2000 Phys. Rev. Lett. 85 1758-61, DiVincenzo et al 2000 Nature 408 339) and its derived versions, e.g. the resonant exchange (RX) qubit, but we also discuss other qubit implementations using three electron spins. For each three-spin qubit we describe the qubit model, the envisioned physical realization, the implementations of single-qubit operations, as well as the read-out and initialization schemes. Two-qubit gates and decoherence properties are discussed for the RX qubit and the exchange-only qubit, thereby completing the list of requirements for quantum computation for a viable candidate qubit implementation. We start by describing the full system of three electrons in a triple quantum dot, then discuss the charge-stability diagram, restricting ourselves to the relevant subsystem, introduce the qubit states, and discuss important transitions to other charge states (Russ et al 2016 Phys. Rev. B 94 165411). Introducing the various qubit implementations, we begin with the exchange-only qubit (DiVincenzo et al 2000 Nature 408 339, Laird et al 2010 Phys. Rev. B 82 075403), followed by the RX qubit (Medford et al 2013 Phys. Rev. Lett. 111 050501, Taylor et al 2013 Phys. Rev. Lett. 111 050502), the spin-charge qubit (Kyriakidis and Burkard 2007 Phys. Rev. B 75 115324), and the hybrid qubit (Shi et al 2012 Phys. Rev. Lett. 108 140503, Koh et al 2012 Phys. Rev. Lett. 109 250503, Cao et al 2016 Phys. Rev. Lett. 116 086801, Thorgrimsson et al 2016 arXiv:1611.04945). The main focus will be on the exchange-only qubit and its modification, the RX qubit, whose single-qubit operations are realized by driving the qubit at its resonant frequency in the microwave range similar to electron spin resonance. Two different types of two-qubit operations are presented for the exchange-only qubits which can be divided into short-ranged and long-ranged interactions. Both of these interaction types are expected to be necessary in a large-scale quantum computer. The short-ranged interactions use the exchange coupling by placing qubits next to each other and applying exchange-pulses (DiVincenzo et al 2000 Nature 408 339, Fong and Wandzura 2011 Quantum Inf. Comput. 11 1003, Setiawan et al 2014 Phys. Rev. B 89 085314, Zeuch et al 2014 Phys. Rev. B 90 045306, Doherty and Wardrop 2013 Phys. Rev. Lett. 111 050503, Shim and Tahan 2016 Phys. Rev. B 93 121410), while the long-ranged interactions use the photons of a superconducting microwave cavity as a mediator in order to couple two qubits over long distances (Russ and Burkard 2015 Phys. Rev. B 92 205412, Srinivasa et al 2016 Phys. Rev. B 94 205421). The nature of the three-electron qubit states each having the same total spin and total spin in z-direction (same Zeeman energy) provides a natural protection against several sources of noise (DiVincenzo et al 2000 Nature 408 339, Taylor et al 2013 Phys. Rev. Lett. 111 050502, Kempe et al 2001 Phys. Rev. A 63 042307, Russ and Burkard 2015 Phys. Rev. B 91 235411). The price to pay for this advantage is an increase in gate complexity. We also take into account the decoherence of the qubit through the influence of magnetic noise (Ladd 2012 Phys. Rev. B 86 125408, Mehl and DiVincenzo 2013 Phys. Rev. B 87 195309, Hung et al 2014 Phys. Rev. B 90 045308), in particular dephasing due to the presence of nuclear spins, as well as dephasing due to charge noise (Medford et al 2013 Phys. Rev. Lett. 111 050501, Taylor et al 2013 Phys. Rev. Lett. 111 050502, Shim and Tahan 2016 Phys. Rev. B 93 121410, Russ and Burkard 2015 Phys. Rev. B 91 235411, Fei et al 2015 Phys. Rev. B 91 205434), fluctuations of the energy levels on each dot due to noisy gate voltages or the environment. Several techniques are discussed which partly decouple the qubit from magnetic noise (Setiawan et al 2014 Phys. Rev. B 89 085314, West and Fong 2012 New J. Phys. 14 083002, Rohling and Burkard 2016 Phys. Rev. B 93 205434) while for charge noise it is shown that it is favorable to operate the qubit on the so-called '(double) sweet spots' (Taylor et al 2013 Phys. Rev. Lett. 111 050502, Shim and Tahan 2016 Phys. Rev. B 93 121410, Russ and Burkard 2015 Phys. Rev. B 91 235411, Fei et al 2015 Phys. Rev. B 91 205434, Malinowski et al 2017 arXiv: 1704.01298), which are least susceptible to noise, thus providing a longer lifetime of the qubit.

Signatures of Hyperfine, Spin-Orbit, and Decoherence Effects in a Pauli Spin Blockade

We detect in real time interdot tunneling events in a weakly coupled two-electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times T_{d} and T_{b}, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to the lifting of a Pauli spin blockade, and the tunneling times ratio η=T_{b}/T_{d} characterizes the blockade efficiency. We find pronounced changes in the behavior of η upon increasing the magnetic field, with η increasing, saturating, and increasing again. We explain this behavior as due to the crossover of the dominant blockade-lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence.

Measuring the Degeneracy of Discrete Energy Levels Using a GaAs/AlGaAs Quantum Dot

We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance and the ability to perform precise and efficient measurements of energy-dependent tunneling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunneling with a precision enhanced by a feedback control. It is thoroughly tested by tuning orbital and spin degeneracies with electric and magnetic fields. The technique also lends itself to studying the connection between the ground-state degeneracy and the lifetime of the excited states.

Fast spin information transfer between distant quantum dots using individual electrons

Transporting ensembles of electrons over long distances without losing their spin polarization is an important benchmark for spintronic devices. It usually requires injecting and probing spin-polarized electrons in conduction channels using ferromagnetic contacts or optical excitation. In parallel with this development, important efforts have been dedicated to achieving control of nanocircuits at the single-electron level. The detection and coherent manipulation of the spin of a single electron trapped in a quantum dot are now well established. Combined with the recently demonstrated control of the displacement of individual electrons between two distant quantum dots, these achievements allow the possibility of realizing spintronic protocols at the single-electron level. Here, we demonstrate that spin information carried by one or two electrons can be transferred between two quantum dots separated by a distance of 4 μm with a classical fidelity of 65%. We show that at present it is limited by spin flips occurring during the transfer procedure before and after electron displacement. Being able to encode and control information in the spin degree of freedom of a single electron while it is being transferred over distances of a few micrometres on nanosecond timescales will pave the way towards 'quantum spintronics' devices, which could be used to implement large-scale spin-based quantum information processing.

Doppler effect induced spin relaxation boom

We study an electron spin qubit confined in a moving quantum dot (QD), with our attention on both spin relaxation, and the product of spin relaxation, the emitted phonons. We find that Doppler effect leads to several interesting phenomena. In particular, spin relaxation rate peaks when the QD motion is in the transonic regime, which we term a spin relaxation boom in analogy to the classical sonic boom. This peak indicates that a moving spin qubit may have even lower relaxation rate than a static qubit, pointing at the possibility of coherence-preserving transport for a spin qubit. We also find that the emitted phonons become strongly directional and narrow in their frequency range as the qubit reaches the supersonic regime, similar to Cherenkov radiation. In other words, fast moving excited spin qubits can act as a source of non-classical phonons. Compared to classical Cherenkov radiation, we show that quantum dot confinement produces a small but important correction on the Cherenkov angle. Taking together, these results have important implications to both spin-based quantum information processing and coherent phonon dynamics in semiconductor nanostructures.

Scaling of decoherence for a system of uncoupled spin qubits

Significant experimental progresses in recent years have generated continued interest in quantum computation. A practical quantum computer would employ thousands if not millions of coherent qubits, and maintaining coherence in such a large system would be imperative for its utility. As an attempt at understanding the quantum coherence of multiple qubits, here we study decoherence of a multi-spin-qubit state under the influence of hyperfine interaction, and clearly demonstrate that the state structure is crucial to the scaling behavior of n-spin decoherence. Specifically, we find that coherence times of a multi-spin state at most scale with the number of qubits n as , while some states with higher symmetries have scale-free coherence with respect to n. Statistically, convergence to these scaling behavior is generally determined by the size of the Hilbert space m, which is usually much larger than n (up to an exponential function of n), so that convergence rate is very fast as we increase the number of qubits. Our results can be extended to other decoherence mechanisms, including in the presence of dynamical decoupling, which allow meaningful discussions on the scalability of spin-based quantum coherent technology.

Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot

In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of interdot level spacing and magnetic field. With varied interdot tunnel coupling, we can identify different dominant spin relaxation mechanisms. Application of a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor ~0.93 and the strength of spin-orbit interaction ~110 μeV can be obtained. The demonstrated strong spin-orbit interaction of heavy holes promises fast local spin manipulation using only electric fields, which is of great interest for quantum information processing.

Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot

We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor backaction are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoirs, giving excellent agreement with the experiment. The electron spin is randomized by the exchange process, thus facilitating fast, gate-controlled spin initialization. At the same time, this process sets an intrinsic upper limit to the spin relaxation time.

Charge transport through a semiconductor quantum dot-ring nanostructure

Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified by additional gating. In this paper we consider a concentric dot-ring nanostructure (DRN) and show that its transport properties can be drastically modified due to the unique geometry. We calculate the dc current through a DRN in the Coulomb blockade regime and show that it can efficiently work as a single-electron transistor (SET) or a current rectifier. In both cases the transport characteristics strongly depend on the details of the confinement potential. The calculations are carried out for low and high bias regime, the latter being especially interesting in the context of current rectification due to fast relaxation processes.

Super-long life time for 2D cyclotron spin-flip excitons

An experimental technique for the indirect manipulation and detection of electron spins entangled in two-dimensional magnetoexcitons has been developed. The kinetics of the spin relaxation has been investigated. Photoexcited spin-magnetoexcitons were found to exhibit extremely slow relaxation in specific quantum Hall systems, fabricated in high mobility GaAs/AlGaAs structures; namely, the relaxation time reaches values over one hundred microseconds. A qualitative explanation of this spin-relaxation kinetics is presented. Its temperature and magnetic field dependencies are discussed within the available theoretical framework.

Observation of decoherence in a carbon nanotube mechanical resonator

In physical systems, decoherence can arise from both dissipative and dephasing processes. In mechanical resonators, the driven frequency response measures a combination of both, whereas time-domain techniques such as ringdown measurements can separate the two. Here we report the first observation of the mechanical ringdown of a carbon nanotube mechanical resonator. Comparing the mechanical quality factor obtained from frequency- and time-domain measurements, we find a spectral quality factor four times smaller than that measured in ringdown, demonstrating dephasing-induced decoherence of the nanomechanical motion. This decoherence is seen to arise at high driving amplitudes, pointing to a nonlinear dephasing mechanism. Our results highlight the importance of time-domain techniques for understanding dissipation in nanomechanical resonators, and the relevance of decoherence mechanisms in nanotube mechanics.

Spin-relaxation anisotropy in a GaAs quantum dot

We report that the electron spin-relaxation time T_{1} in a GaAs quantum dot with a spin-1/2 ground state has a 180° periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as being due to the interplay of Rashba and Dresselhaus spin orbit contributions. Different from this prediction, we find that the extrema in the T_{1} do not occur when the magnetic field is along the [110] and [11[over ¯]0] crystallographic directions. This deviation is attributed to an elliptical dot confining potential. The T_{1} varies by more than 1 order of magnitude when rotating a 3 T field, reaching about 80 ms for the optimal angle. We infer from the data that in our device the signs of the Rashba and Dresselhaus constants are opposite.

Proposal for a phonon laser utilizing quantum-dot spin states

We propose a nanoscale realization of a phonon laser utilizing phonon-assisted spin flips in quantum dots to amplify sound. Owing to a long spin relaxation time, the device can be operated in a strong pumping regime, in which the population inversion is close to its maximal value allowed under Fermi statistics. In this regime, the threshold for stimulated emission is unaffected by spontaneous spin flips. Considering a nanowire with quantum dots defined along its length, we show that a further improvement arises from confining the phonons to one dimension, and thus reducing the number of phonon modes available for spontaneous emission. Our work calls for the development of nanowire-based, high-finesse phonon resonators.

Nondestructive real-time measurement of charge and spin dynamics of photoelectrons in a double quantum dot

We demonstrate one and two photoelectron trapping and the subsequent dynamics associated with interdot transfer in double quantum dots over a time scale much shorter than the typical spin lifetime. Identification of photoelectron trapping is achieved via resonant interdot tunneling of the photoelectrons in the excited states. The interdot transfer enables detection of single photoelectrons in a nondestructive manner. When two photoelectrons are trapped at almost the same time we observed that the interdot resonant tunneling is strongly affected by the Coulomb interaction between the electrons. Finally the influence of the two-electron singlet-triplet state hybridization has been detected using the interdot tunneling of a photoelectron.

Single spins in self-assembled quantum dots

Self-assembled quantum dots have excellent photonic properties. For instance, a single quantum dot is a high-brightness, narrow-linewidth source of single photons. Furthermore, the environment of a single quantum dot can be tailored relatively easily using semiconductor heterostructure and post-growth processing techniques, enabling electrical control of the quantum dot charge and control over the photonic modes with which the quantum dot interacts. A single electron or hole trapped inside a quantum dot has spintronics applications. Although the spin dephasing is rather rapid, a single spin can be manipulated using optical techniques on subnanosecond timescales. Optical experiments are also providing new insights into old issues, such as the central spin problem. This Review provides a snapshot of this active field, with some indications for the future. It covers the basic materials and optical properties of single quantum dots, techniques for initializing, manipulating and reading out single spin qubits, and the mechanisms that limit the electron-spin and hole-spin coherence.

Simultaneous spin-charge relaxation in double quantum dots

We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies nonmonotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning.

Extremely slow spin relaxation in a spin-unpolarized quantum Hall system

Cyclotron spin-flip excitation in a ν=2 quantum Hall system, being separated from the ground state by a slightly smaller gap than the cyclotron energy and from upper magnetoplasma excitation by the Coulomb gap [S. Dickmann and I. V. Kukushkin, Phys. Rev. B 71, 241310(R) (2005); L. V. Kulik, I. V. Kukushkin, S. Dickmann, V. E. Kirpichev, A. B. Van'kov, A. L. Parakhonsky, J. H. Smet, K. von Klitzing, and W. Wegscheider, Phys. Rev. B 72, 073304 (2005)] cannot relax in a purely electronic way except only with the emission of a shortwave acoustic phonon (k~3×10(7)/cm). As a result, relaxation in a modern wide-thickness quantum well occurs very slowly. We calculate the characteristic relaxation time to be ~1 s. Extremely slow relaxation should allow the production of a considerable density of zero-momenta cyclotron spin-flip excitations in a very small phase volume, thus forming a highly coherent ensemble-the Bose-Einstein condensate. The condensate state can be controlled by short optical pulses (~1 μs), switching it on and off.

Dispersive readout of a few-electron double quantum dot with fast RF gate sensors

We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate sensing technique against the well established quantum point contact charge detector and find comparable performance with a bandwidth of ∼ 10 MHz and an equivalent charge sensitivity of ∼ 6.3 × 10(-3) e/sqrt[Hz]. Dispersive gate sensing alleviates the burden of separate charge detectors for quantum dot systems and promises to enable readout of qubits in scaled-up arrays.

Noise spectroscopy using correlations of single-shot qubit readout

A better understanding of the noise causing qubit decoherence is crucial for improving qubit performance. The noise spectrum affecting the qubit may be extracted by measuring dephasing under the application of pulse sequences but requires accurate qubit control and sufficiently long relaxation times, which are not always available. Here, we describe an alternative method to extract the spectrum from correlations of single-shot measurement outcomes of successive free induction decays. This method only requires qubit initialization and readout with a moderate fidelity and also allows independent tuning of both the overall sensitivity and the frequency region over which it is sensitive. Thus, it is possible to maintain a good detection contrast over a very wide frequency range. We discuss using our method for measuring both 1/f noise and the fluctuation spectrum of the nuclear bath of GaAs spin qubits.

Spin-orbit-mediated manipulation of heavy-hole spin qubits in gated semiconductor nanodevices

A novel spintronic nanodevice is proposed that is able to manipulate the single heavy-hole spin state in a coherent manner. It can act as a single quantum logic gate. The heavy-hole spin transformations are realized by transporting the hole around closed loops defined by metal gates deposited on top of the nanodevice. The device exploits Dresselhaus spin-orbit interaction, which translates the spatial motion of the hole into a rotation of the spin. The proposed quantum gate operates on subnanosecond time scales and requires only the application of a weak static voltage which allows for addressing heavy-hole spin qubits individually. Our results are supported by quantum mechanical time-dependent calculations within the four-band Luttinger-Kohn model.

Theory of spin relaxation in two-electron lateral coupled quantum dots

A global quantitative picture of the phonon-induced two-electron spin relaxation in GaAs double quantum dots is presented using highly accurate numerics. Wide regimes of interdot coupling, magnetic field magnitude and orientation, and detuning are explored in the presence of a nuclear bath. Most important, the giant magnetic anisotropy of the singlet-triplet relaxation can be controlled by detuning switching the principal anisotropy axes: a protected state becomes unprotected upon detuning and vice versa. It is also established that nuclear spins can dominate spin relaxation for unpolarized triplets even at high magnetic fields, contrary to common belief.

Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures

Effects of a longitudinal magnetic field on optical spin injection and detection in InAs/GaAs quantum dot (QD) structures are investigated by optical orientation spectroscopy. An increase in the optical and spin polarization of the QDs is observed with increasing magnetic field in the range 0-2 T, and is attributed to suppression of exciton spin depolarization within the QDs that is promoted by the hyperfine interaction and anisotropic electron-hole exchange interaction. This leads to a corresponding enhancement in spin detection efficiency of the QDs by a factor of up to 2.5. At higher magnetic fields, when these spin depolarization processes are quenched, the electron spin polarization in anisotropic QD structures (such as double QDs that are preferably aligned along a specific crystallographic axis) still exhibits a rather strong field dependence under non-resonant excitation. In contrast, such a field dependence is practically absent in more 'isotropic' QD structures (e.g. single QDs). We attribute the observed effect to stronger electron spin relaxation in the spin injectors (i.e. wetting layer and GaAs barriers) of the lower-symmetry QD structures, which also explains the lower spin injection efficiency observed in these structures.

Cryogenic high-frequency readout and control platform for spin qubits

We have developed a cryogenic platform for the control and readout of spin qubits that comprises a high density of dc and radio frequency sample interconnects based on a set of coupled printed circuit boards. The modular setup incorporates 24 filtered dc lines, 14 control and readout lines with bandwidth from dc to above 6 GHz, and 2 microwave connections for excitation to 40 GHz. We report the performance of this platform, including signal integrity and crosstalk measurements and discuss design criteria for constructing sample interconnect technology needed for multi-qubit devices.

Semiconductor self-assembled quantum dots: present status and future trends

Progress in controlling the size, shape, and composition of quantum dots (QDs) as well as their positioning will be crucial to further advances in the fields of quantum information and device applications. The growth of QDs into lattices using controlled positioning of the QD nucleation centers is a possible method. QD positioning is also much needed for further development of QD microcavities and photonic-crystal based devices that are used for quantum information applications. This article discusses the prospects for progress in these fields that may be realized if a better control over the positioning and self-positioning of quantum dots is achieved.

Controllable anisotropic exchange coupling between spin qubits in quantum dots

The exchange coupling between quantum dot spin qubits is isotropic, which restricts the types of quantum gates that can be formed. Here, we propose a method for controlling anisotropic interactions between spins arranged in a bus geometry. The symmetry is broken by an external magnetic field, resulting in XXZ-type interactions that can efficiently generate maximally entangled Greenberger-Horne-Zeilinger states or universal gate sets for exchange-only quantum computing. We exploit the XXZ couplings to propose a qubit scheme, based on double dots.

Unconventional transport in the "hole" regime of a si double quantum dot

Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade.

Single-shot detection of electrons generated by individual photons in a tunable lateral quantum dot

We demonstrate single-shot detection of single electrons generated by single photons using an electrically tunable quantum dot and a quantum point contact charge detector. By tuning the quantum dot in a Coulomb blockade before the photoexcitation, we observe the trapping and subsequent resetting of single photogenerated electrons. The photogenerated electrons can be stored in the dot for a tunable time range from shorter to longer than the spin-flip time T1. We combine this trap-reset technique with spin-dependent tunneling under magnetic fields to observe the spin-dependent photon detection within the T1.

Spin relaxation in semiconductor quantum rings and dots--a comparative study

We calculate spin relaxation times due to spin-orbit-mediated electron-phonon interactions for experimentally accessible semiconductor quantum ring and dot architectures. We elucidate the differences between the two systems due to different confinement. The estimated relaxation times (at B = 1 T) are in the range between a few milliseconds to a few seconds. This high stability of spin in a quantum ring allows us to test it as a spin qubit. A brief discussion of quantum state manipulations with such a qubit is presented.

The effect of electrostatic screening on a nanometer scale electrometer

We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We show that despite this screening effect, the electrometer is still very sensitive to its electrostatic environment, even at room temperature.

Interlaced dynamical decoupling and coherent operation of a singlet-triplet qubit

We experimentally demonstrate coherence recovery of singlet-triplet superpositions by interlacing qubit rotations between Carr-Purcell (CP) echo sequences. We then compare the performance of Hahn, CP, concatenated dynamical decoupling (CDD), and Uhrig dynamical decoupling for singlet recovery. In the present case, where gate noise and drift combined with spatially varying hyperfine coupling contribute significantly to dephasing, and pulses have limited bandwidth, CP and CDD yield comparable results, with T(2)∼80 μs.

Measuring charge transport in a thin solid film using charge sensing

We measure charge transport in a hydrogenated amorphous silicon (a-Si:H) thin film using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances even in the presence of blocking contacts. At high temperatures, where the resistance of the a-Si:H is not too large, the charge detection measurement agrees with a direct measurement of current. The device geometry allows us to probe both the field effect and dispersive transport in the a-Si:H using charge sensing and to extract the density of states near the Fermi energy.

Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot

We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T1 of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant T1, respectively.

Rapid single-shot measurement of a singlet-triplet qubit

We report repeated single-shot measurements of the two-electron spin state in a GaAs double quantum dot. The readout allows measurement with a fidelity above 90% with a approximately 7 micros cycle time. Hyperfine-induced precession between singlet and triplet states of the two-electron system are directly observed, as nuclear Overhauser fields are quasistatic on the time scale of the measurement cycle. Repeated measurements on millisecond to second time scales reveal the evolution of the nuclear environment.

Electron spin for classical information processing: a brief survey of spin-based logic devices, gates and circuits

In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an information processing device invariably causes current flow and an associated dissipation. Replacing 'charge' with the 'spin' of an electron to encode information may eliminate much of this dissipation and lead to more energy-efficient 'green electronics'. This realization has spurred significant research in spintronic devices and circuits where spin either directly acts as the physical variable for hosting information or augments the role of charge. In this review article, we discuss and elucidate some of these ideas, and highlight their strengths and weaknesses. Many of them can potentially reduce energy dissipation significantly, but unfortunately are error-prone and unreliable. Moreover, there are serious obstacles to their technological implementation that may be difficult to overcome in the near term. This review addresses three constructs: (1) single devices or binary switches that can be constituents of Boolean logic gates for digital information processing, (2) complete gates that are capable of performing specific Boolean logic operations, and (3) combinational circuits or architectures (equivalent to many gates working in unison) that are capable of performing universal computation.

Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy

Optical spin injection is studied in novel laterally-arranged self-assembled InAs/GaAs quantum dot structures, by using optical orientation measurements in combination with tunable laser spectroscopy. It is shown that spins of uncorrelated free carriers are better conserved during the spin injection than the spins of correlated electrons and holes in an exciton. This is attributed to efficient spin relaxation promoted by the electron-hole exchange interaction of the excitons. Our finding suggests that separate carrier injection, such as that employed in electrical spin injection devices, can be advantageous for spin conserving injection. It is also found that the spin injection efficiency decreases for free carriers with high momentum, due to the acceleration of spin relaxation processes.

Relaxation of hole spins in quantum dots via two-phonon processes

We investigate theoretically spin relaxation in heavy-hole quantum dots in low external magnetic fields. We demonstrate that two-phonon processes and spin-orbit interaction are experimentally relevant and provide an explanation for the recently observed saturation of the spin-relaxation rate in heavy-hole quantum dots with vanishing magnetic fields. We propose further experiments to identify the relevant spin-relaxation mechanisms in low magnetic fields.