First-principles theory of competing order types, phase separation, and phonon spectra in thermoelectric AgPbmSbTe(m+2) alloys

Improving Thermoelectric Performance of AgSbTe2 through Suppression of Ag2Te and Band Convergence via Mg and Ti Codoping

In this study, the impact of codoping Mg and Ti on the thermoelectric performance of AgSbTe2 materials was investigated. Through a two-step synthesis process involving slow cooling and spark plasma sintering, AgSb0.98-xMg0.02TixTe2 samples were prepared. The introduction of Mg and Ti dopants effectively suppressed the formation of the undesirable Ag2Te phase. Density functional theory (DFT) calculations confirmed that Ti doping facilitated the band convergence, leading to a reduction in the effective mass of the carriers. This optimization enhanced carrier mobility and, consequently, electrical conductivity. Additionally, the codoping strategy resulted in the reinforcement of point defects, which contributed to a decrease in lattice thermal conductivity. The AgSb0.98-xMg0.02TixTe2 sample achieved a maximum figure of merit (ZT) value of 1.45 at 523 K, representing an 87% improvement over the undoped AgSbTe2 sample. The average ZT value over the temperature range of 323-573 K was 1.09, marking a significant enhancement in thermoelectric performance. This research demonstrates the potential of Mg and Ti codoping as a strategy to improve the thermoelectric properties of AgSbTe2-based materials.

Suppressed Lone Pair Electrons Explain Unconventional Rise of Lattice Thermal Conductivity in Defective Crystalline Solids

Manipulating thermal properties of materials can be interpreted as the control of how vibrations of atoms (known as phonons) scatter in a crystal lattice. Compared to a perfect crystal, crystalline solids with defects are expected to have shorter phonon mean free paths caused by point defect scattering, leading to lower lattice thermal conductivities than those without defects. While this is true in many cases, alloying can increase the phonon mean free path in the Cd-doped AgSnSbSe3 system to increase the lattice thermal conductivity from 0.65 to 1.05 W m-1 K-1 by replacing 18% of the Sb sites with Cd. It is found that the presence of lone pair electrons leads to the off-centering of cations from the centrosymmetric position of a cubic lattice. X-ray pair distribution function analysis reveals that this structural distortion is relieved when the electronic configuration of the dopant element cannot produce lone pair electrons. Furthermore, a decrease in the Grüneisen parameter with doping is experimentally confirmed, establishing a relationship between the stereochemical activity of lone pair electrons and the lattice anharmonicity. The observed "harmonic" behavior with doping suggests that lone pair electrons must be preserved to effectively suppress phonon transport in these systems.

High Thermoelectric Performance in Phonon-Glass Electron-Crystal Like AgSbTe2

Achieving glass-like ultra-low thermal conductivity in crystalline solids with high electrical conductivity, a crucial requirement for high-performance thermoelectrics , continues to be a formidable challenge. A careful balance between electrical and thermal transport is essential for optimizing the thermoelectric performance. Despite this inherent trade-off, the experimental realization of an ideal thermoelectric material with a phonon-glass electron-crystal (PGEC) nature has rarely been achieved. Here, PGEC-like AgSbTe2 is demonstrated by tuning the atomic disorder upon Yb doping, which results in an outstanding thermoelectric performance with figure of merit, zT ≈ 2.4 at 573 K. Yb-doping-induced enhanced atomic ordering decreases the overlap between the hole and phonon mean free paths and consequently leads to a PGEC-like transport behavior in AgSbTe2 . A twofold increase in electrical mobility is observed while keeping the position of the Fermi level (EF ) nearly unchanged and corroborates the enhanced crystalline nature of the AgSbTe2 lattice upon Yb doping for electrical transport. The cation-ordered domains, lead to the formation of nanoscale superstructures (≈2 to 4 nm) that strongly scatter heat-carrying phonons, resulting in a temperature-independent glass-like thermal conductivity. The strategy paves the way for realizing high thermoelectric performance in various disordered crystals by making them amorphous to phonons while favoring crystal-like electrical transport.

Suppressing Ag2Te nanoprecipitates for enhancing thermoelectric efficiency of AgSbTe2

Thermoelectrics are a class of materials that provide interconversion between heat and electricity, with desirable traits such as low thermal conductivity and low electrical resistivity. AgSbTe2 has emerged as one of the leading materials in recent years due to its ultra-low thermal conductivity. However, one major hindrance in undoped AgSbTe2 is its high electrical resistivity and low Seebeck coefficient due to the presence of Ag2Te nanoprecipitates. In this work, we leverage on the combination of an off-stoichiometric composition and a non-equilibrium process to simultaneously enhance the properties of AgSbTe2 and its thermoelectric device performance. Microscopically, the Ag2Te-deficient starting composition combined with a non-equilibrium thermal process suppresses the Ag2Te nanoprecipitates in the material. In addition, it is evident from the density functional theory (DFT) electronic structure that Ag2Te deficiency results in a smaller lattice and higher density-of-states near the Fermi level, which simultaneously lower the electrical resistivity and increase the Seebeck coefficient. As a result, zT as high as 1.7 was achieved at 573 K. Additionally, when combined with a high room temperature zT of 0.75, a power conversion efficiency of 7.3% was achieved at a ΔT of 290 K. Crucially, the strategy in this work can inspire application in other ABX2 material systems to achieve improved thermoelectric performances.

Defect-Engineering-Stabilized AgSbTe2 with High Thermoelectric Performance

Thermoelectric (TE) generators enable the direct and reversible conversion between heat and electricity, providing applications in both refrigeration and power generation. In the last decade, several TE materials with relatively high figures of merit (zT) have been reported in the low- and high-temperature regimes. However, there is an urgent demand for high-performance TE materials working in the mid-temperature range (400-700 K). Herein, p-type AgSbTe₂ materials stabilized with S and Se co-doping are demonstrated to exhibit an outstanding maximum figure of merit (zT_max ) of 2.3 at 673 K and an average figure of merit (zT_ave ) of 1.59 over the wide temperature range of 300-673 K. This exceptional performance arises from an enhanced carrier density resulting from a higher concentration of silver vacancies, a vastly improved Seebeck coefficient enabled by the flattening of the valence band maximum and the inhibited formation of n-type Ag₂ Te, and ahighly improved stability beyond 673 K. The optimized material is used to fabricate a single-leg device with efficiencies up to 13.3% and a unicouple TE device reaching energy conversion efficiencies up to 12.3% at a temperature difference of 370 K. These results highlight an effective strategy to engineer high-performance TE material in the mid-temperature range.

Enhanced Thermoelectric Performance of Mg-Doped AgSbTe2 by Inhibiting the Formation of Ag2Te

The existence of Ag2Te has always been an obstacle for p-type thermoelectric material AgSbTe2 to improve its thermoelectric performance. In this work, AgSb1-xMgxTe2 samples are synthesized by melting-slow-cooling and then spark plasma sintering (SPS). Through increasing the solubility of Ag2Te in the AgSbTe2 matrix by Mg doping, the formation of Ag2Te is inhibited. Density functional theory calculations confirm more valence bands are involved in electrical transport due to Mg doping. Therefore, the electrical conductivity of AgSb1-xMgxTe2 samples has been greatly improved due to the reduction of Ag2Te with n-type electrical conductivity. Moreover, the downward trend of ZT, which is caused by the structural transition of Ag2Te at about 418 K, disappears. Meanwhile, lattice defects form in the AgSb0.98Mg0.02Te2 sample, and Mg doping improves the configurational entropy change, resulting in a decrease in lattice thermal conductivity over the entire temperature range of measurement. Finally, a high ZT value of 1.31 at 523 K is achieved for the AgSb0.98Mg0.02Te2 sample. This study demonstrates that Mg doping can effectively improve AgSbTe2 thermoelectric performance by inhibiting the formation of the Ag2Te impurity phase.

Half-Heusler phase TmNiSb under pressure: intrinsic phase separation, thermoelectric performance and structural transition

Half-Heusler (HH) phase TmNiSb was obtained by arc-melting combined with high-pressure high-temperature sintering in conditions: p = 5.5 GPa, [Formula: see text] = 20, 250, 500, 750, and 1000 [Formula: see text]C. Within pressing temperatures 20-750 [Formula: see text]C the samples maintained HH structure, however, we observed intrinsic phase separation. The material divided into three phases: stoichiometric TmNiSb, nickel-deficient phase TmNi[Formula: see text]Sb, and thulium-rich phase Tm(NiSb)[Formula: see text]. For TmNiSb sample sintered at 1000 [Formula: see text]C, we report structural transition to LiGaGe-type structure (P[Formula: see text]mc, a = 4.367(3) Å, c = 7.138(7) Å). Interpretation of the transition is supported by X-ray powder diffraction, electron back-scattered diffraction, ab-initio calculations of Gibbs energy and phonon dispersion relations. Electrical resistivity measured for HH samples with phase separation shown non-degenerate behavior. Obtained energy gaps for HH samples were narrow ([Formula: see text] 260 meV), while the average hole effective masses in range 0.8-2.5[Formula: see text]. TmNiSb sample pressed at 750 [Formula: see text]C achieved the biggest power factor among the series, 13 [Formula: see text]WK[Formula: see text]cm[Formula: see text], which proves that the intrinsic phase separation is not detrimental for the electronic transport.

Computational design of thermoelectric alloys through optimization of transport and dopability

Alloying is a common technique to optimize the functional properties of materials for thermoelectrics, photovoltaics, energy storage etc. Designing thermoelectric (TE) alloys is especially challenging because it is a multi-property optimization problem, where the properties that contribute to high TE performance are interdependent. In this work, we develop a computational framework that combines first-principles calculations with alloy and point defect modeling to identify alloy compositions that optimize the electronic, thermal, and defect properties. We apply this framework to design n-type Ba_2(1-x)Sr_2xCdP₂ Zintl thermoelectric alloys. Our predictions of the crystallographic properties such as lattice parameters and site disorder are validated with experiments. To optimize the conduction band electronic structure, we perform band unfolding to sketch the effective band structures of alloys and find a range of compositions that facilitate band convergence and minimize alloy scattering of electrons. We assess the n-type dopability of the alloys by extending the standard approach for computing point defect energetics in ordered structures. Through the application of this framework, we identify an optimal alloy composition range with the desired electronic and thermal transport properties, and n-type dopability. Such a computational framework can also be used to design alloys for other functional applications beyond TE.

High Thermoelectric Performance of AgSb1-xPbxSe2 Prepared by Fast Nonequilibrium Synthesis

AgSbSe₂ is a typical member of cubic I-V-VI₂ semiconductors, which are known for their extremely low lattice thermal conductivity (κ_l). However, the low electrical conductivity of AgSbSe₂, below ∼10 S cm^-1 at room temperature, has hindered its thermoelectric performance. In this work, single-phase AgSbSe₂ bulk samples with much higher electrical conductivity were synthesized via self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) for the first time. Pb doping through the nonequilibrium process further increases the electrical conductivity to >100 S cm^-1. Furthermore, continuously increased effective mass m_d^* can be achieved upon Pb doping because of the multiple degenerate valence bands of AgSbSe₂ and the energy-filtering effect induced by in situ-formed nanodots. The simultaneous enhancement of both the electrical conductivity and Seebeck coefficient contributes to an unprecedentedly high average power factor of 6.75 μW cm^-1 K^-2. Meanwhile, the introduced dense grain boundaries and point defects enhance the phonon scattering and consequently suppress κ_l, yielding a high ZT value of 1.2 at 723 K in AgSb_0.94Pb_0.06Se₂. This study opens a new avenue for rapid, low-cost, large-scale production of AgSbSe₂-based materials and demonstrates that Pb-doped AgSbSe₂ prepared via the SHS-SPS method is a promising candidate for thermoelectric applications.

First principles thermodynamical modeling of the binodal and spinodal curves in lead chalcogenides

High-throughput ab initio calculations, cluster expansion techniques, and thermodynamic modeling have been synergistically combined to characterize the binodal and the spinodal decompositions features in the pseudo-binary lead chalcogenides PbSe–PbTe, PbS–PbTe, and PbS–PbSe.

Dual Vacancies: An Effective Strategy Realizing Synergistic Optimization of Thermoelectric Property in BiCuSeO

Vacancy is a very important class of phonon scattering center to reduce thermal conductivity for the development of high efficient thermoelectric materials. However, conventional monovacancy may also act as an electron or hole acceptor, thereby modifying the electrical transport properties and even worsening the thermoelectric performance. This issue urges us to create new types of vacancies that scatter phonons effectively while not deteriorating the electrical transport. Herein, taking BiCuSeO as an example, we first reported the successful synergistic optimization of electrical and thermal parameters through Bi/Cu dual vacancies. As expected, as compared to its pristine and monovacancy samples, these dual vacancies further increase the phonon scattering, which results in an ultra low thermal conductivity of 0.37 W m(-1) K(-1) at 750 K. Most importantly, the clear-cut evidence in positron annihilation unambiguously confirms the interlayer charge transfer between these Bi/Cu dual vacancies, which results in the significant increase of electrical conductivity with relatively high Seebeck coefficient. As a result, BiCuSeO with Bi/Cu dual vacancies shows a high ZT value of 0.84 at 750 K, which is superior to that of its native sample and monovacancies-dominant counterparts. These findings undoubtedly elucidate a new strategy and direction for rational design of high performance thermoelectric materials.

Glass-like phonon scattering from a spontaneous nanostructure in AgSbTe2

Materials with very low thermal conductivity are of great interest for both thermoelectric and optical phase-change applications. Synthetic nanostructuring is most promising for suppressing thermal conductivity through phonon scattering, but challenges remain in producing bulk samples. In crystalline AgSbTe2 we show that a spontaneously forming nanostructure leads to a suppression of thermal conductivity to a glass-like level. Our mapping of the phonon mean free paths provides a novel bottom-up microscopic account of thermal conductivity and also reveals intrinsic anisotropies associated with the nanostructure. Ground-state degeneracy in AgSbTe2 leads to the natural formation of nanoscale domains with different orderings on the cation sublattice, and correlated atomic displacements, which efficiently scatter phonons. This mechanism is general and suggests a new avenue for the nanoscale engineering of materials to achieve low thermal conductivities for efficient thermoelectric converters and phase-change memory devices.

Interplay between subsurface ordering, surface segregation, and adsorption on Pt-Ti(111) near-surface alloys

Using the first-principles cluster expansion (CE) method, we studied the subsurface ordering of Pt/Pt-Ti(111) surface alloys and the effect of this ordering on segregation and adsorption behavior. The clusters included in the CE are optimized by a genetic algorithm to better describe the interactions between Pt and Ti atoms in the subsurface layer. Similar to bulk Pt-Ti alloys, Pt-Ti(111) subsurface alloys show a strong ordering tendency. A series of stable ordered Pt-Ti subsurface structures are identified from the two-dimensional (2D) CE. As an indication of the connection between the 2D and the bulk ordering, the CE predicts a ground-state Pt(8)Ti structure in the (111) subsurface layer, which is the same ordering as the close-packed plane of the bulk Pt(8)Ti compound. We carried out Monte Carlo simulations (MC) using the CE Hamiltonian to study the finite temperature stability of the Pt-Ti subsurface structures. The MC results show that subsurface structures in the Pt-rich range have higher order-disorder transition temperatures than their Ti-rich subsurface counterparts. We calculate the binding energy of different adsorbates (O, S, H, and NO) on Pt-terminated and Ti-segregated surfaces of ordered PtTi and Pt(8)Ti subsurface alloys. The binding of these adsorbates is generally stronger on Ti-segregated surfaces than Pt-terminated surfaces. The adsorption-induced Ti surface segregation is determined by two factors: (i) the unfavorable energy penalty for the Ti atom to segregate to the clean surface and (ii) the favorable energy decrease from stronger adsorbate binding on the Ti-segregated surface. The two factors introduce similar magnitude in energy change for the S and NO adsorption on Ti-segregated surfaces of PtTi subsurface alloys. We predict an adsorption-induced Ti surface segregation that is dependent on the atomic configurations of the Ti-segregated surfaces resulting from the competition of the two factors.

Nanodopant-induced band modulation in AgPb(m)SbTe(2+m)-type thermoelectrics

The structure-property relation is a key outstanding problem in the study of nanocomposite materials. Here we elucidate the fundamental physics of nanodopants in thermoelectric nanocomposites XPb(m)YTe(2+m) (X = Ag, Na; Y = Sb, Bi). First-principles calculations unveil a sizable band-gap widening driven by nanodopant-induced lattice strain and a band split-off mainly caused by the spin-orbit interaction in nanodopant. Boltzmann transport calculations on PbTe with modified band mimicking nanodopant-induced modulations show significant but competing effects on high-temperature electron transport behavior. These results offer insights for understanding experimental findings and optimizing thermoelectric properties of narrow band-gap semiconductor nanocomposites.

Influence of the magnetic state on the chemical order-disorder transition temperature in Fe-Ni permalloy

In magnetic alloys, the effect of finite temperature magnetic excitations on phase stability below the Curie temperature is poorly investigated, although many systems undergo phase transitions in this temperature range. We consider random Ni-rich Fe-Ni alloys, which undergo chemical order-disorder transition approximately 100 K below their Curie temperature, to demonstrate from ab initio calculations that deviations of the global magnetic state from ideal ferromagnetic order due to temperature induced magnetization reduction have a crucial effect on the chemical transition temperature. We propose a scheme where the magnetic state is described by partially disordered local magnetic moments, which in combination with Heisenberg Monte Carlo simulations of the magnetization allows us to reproduce the transition temperature in good agreement with experimental data.

Microstructure and a nucleation mechanism for nanoprecipitates in PbTe-AgSbTe2

Many recent advances in thermoelectric (TE) materials are attributed to their nanoscale constituents. Determination of the nanocomposite structures has represented a major experimental and computational challenge and eluded previous attempts. Here we present the first atomically resolved structures of high performance TE material PbTe-AgSbTe2 by transmission electron microscopy imaging and density functional theory calculations. The results establish an accurate structural characterization for PbTe-AgSbTe2 and identify the interplay of electric dipolar interactions and strain fields as the driving mechanism for nanoprecipitate nucleation and aggregation.