Tuning the limiting thickness of a thin oxide layer on Al(111) with oxygen gas pressure

Atomistic mechanisms of water vapor-induced surface passivation

The microscopic mechanisms underpinning the spontaneous surface passivation of metals from ubiquitous water have remained largely elusive. Here, using in situ environmental electron microscopy to atomically monitor the reaction dynamics between aluminum surfaces and water vapor, we provide direct experimental evidence that the surface passivation results in a bilayer oxide film consisting of a crystalline-like Al(OH)3 top layer and an inner layer of amorphous Al2O3. The Al(OH)3 layer maintains a constant thickness of ~5.0 Å, while the inner Al2O3 layer grows at the Al2O3/Al interface to a limiting thickness. On the basis of experimental data and atomistic modeling, we show the tunability of the dissociation pathways of H2O molecules with the Al, Al2O3, and Al(OH)3 surface terminations. The fundamental insights may have practical significance for the design of materials and reactions for two seemingly disparate but fundamentally related disciplines of surface passivation and catalytic H2 production from water.

Atomistic Origins of Reversible Noncatalytic Gas-Solid Interfacial Reactions

Noncatalytic gas-solid reactions are a large group of heterogeneous reactions that are usually assumed to occur irreversibly because of the strong driving force to favor the forward direction toward the product formation. Using the example of Ni oxidation into NiO with CO2, herein, we demonstrate the existence of the reverse element that results in the NiO reduction from the countering effect of the gaseous product of CO. Using in situ electron microscopy observations and atomistic modeling, we show that the oxidation process occurs via preferential CO2 adsorption along step edges that results in step-flow growth of NiO layers, and the presence of Ni atoms on the flat NiO surface promotes the nucleation of NiO layers. Simultaneously, the NiO reduction happens via preferential step-edge adsorption of CO that leads to the receding motion of atomic steps, and the presence of Ni vacancies in the NiO surface facilitates the CO-adsorption-induced surface pitting. Temperature and CO2 pressure effect maps are constructed to illustrate the spatiotemporal dynamics of the competing NiO redox reactions. These results demonstrate the rich gas-solid surface reaction dynamics induced by the coexisting forward and reverse reaction elements and have practical applicability in manipulating gas-solid reactions via controlling the gas environment or atomic structure of the solid surface to steer the reaction toward the desired direction.

Corrosion of Passive Aluminum Anodes in a Chloroaluminate Deep Eutectic Solvent for Secondary Batteries: The Bad, the Good, and the Ugly

The passivity of aluminum is detrimental to its performance as an anode in batteries. Soaking of native oxide-covered aluminum in a chloroaluminate deep eutectic solvent gradually activates the electrode surface, which is reflected in a continuously decreasing open circuit potential. The underlying processes were studied by analyzing the 3 to 7 nm thick layer of native oxide after increasing periods of soaking with secondary neutral mass spectrometry, X-ray photoelectron spectroscopy, and energy-dispersive spectroscopy in a transmission electron microscope. They consistently show permeation of electrolyte species into the layer associated with gradual swelling. After extended periods of soaking at open circuit potentials, local deposits of a range of foreign metals have been found in scanning electron microscopy images of the electrode surface. The pitting corrosion is caused by trace metal ion impurities present in the electrolyte and results in highly nonuniform current density distribution during discharge/charge cycling of battery cells as shown by local deposits of aluminum. The processes during soaking at open circuit potentials have been monitored by electrochemical impedance spectroscopy and could be analyzed by fitting an equivalent circuit model for pitting corrosion.

Exploring the Photocorrosion Mechanism of a Photocatalyst

Photoelectrochemical (PEC) water splitting using Ta₃N₅ anodes shows a high solar-to-hydrogen (STH) efficiency approaching 10%. However, the long-term stability of gas evolution should be improved for the commercial utilization of PEC water-splitting technology. Herein, we examined the photocurrent degradation of photoanodes prepared by uniformly loading a NiFeO_x cocatalyst onto a Ta₃N₅ semiconductor. Although spectroscopic analysis showed that the degradation was attributable to the formation of an oxide layer, several oxide growth kinetic laws and mechanisms are known. We theoretically derived the photocurrent kinetic laws instead of the oxide growth kinetic laws by generalizing the Cabrera-Mott oxidation theory of metal oxidation in air to apply it to photocorrosion. The measured photocurrent kinetics are fully consistent with the theoretical kinetic laws. We show that ion drift due to charging of the oxide layer limits oxide growth even though uniform cocatalyst loading is designed to prevent self-oxidation of Ta₃N₅.

Predictive Analysis of Wettability of Al-Si Based Multiphase Alloys and Aluminum Matrix Composites by Machine Learning and Physical Modeling

Wetting of multiphase alloys and their composites depends on multiple parameters, and these relationships are difficult to predict from first principles only. We study correlations between the composition, surface finish, and microstructure of Al-Si alloys (Si content 7-50%) and Al metal matrix composites (MMCs) with graphite (Gr), NiAl₃, and SiC and the water contact angle (CA) experimentally, theoretically, and with machine learning (ML) techniques. Their surface properties were modified by mechanical abrasion, etching, and addition of alloying elements. An ML approach was developed to investigate correlations between the predictor variables (properties of the materials) and the CA. Theoretical models of wetting of rough surfaces (Wenzel, Cassie-Baxter, and their modifications) do not fully capture the CA, while ML models follow the experimental values. A full factorial design is utilized with combinations of all levels of the predictor factors (grit size, silicon percentage, droplet size, elapsed time, etching, reinforcing particles). To map the predictor variables to the response variables, 409 experimental data points were applied to train and test various supervised ML models, namely, regression, artificial neural network (ANN), chi-square automatic interaction detection (CHAID), extreme gradient boosting (XGBoost), and random forest. The correlations between the most significant factors and CA are explored through visualization techniques. The most accurately trained model shows a strong positive linear correlation (r > 0.9) between predicted and observed CA values in the test set, indicating the robustness of the model. The experimental measurements and artificial intelligence results demonstrate that CA increases following mechanically abrading the surface, etching, and adding Gr to the surface. The ML methods are promising to predict wetting properties and to provide a deeper understanding of the physical phenomena associated with the wettability of metallic alloys and their metal matrix composites.

Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors

A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current-voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.

Stable Luminescence of CsPbBr3/nCdS Core/Shell Perovskite Quantum Dots with Al Self-Passivation Layer Modification

Perovskite quantum dots (PQDs) are among the most important luminescent semiconducting materials; however, they are unstable. Exposure to light, heat, and air can lead to irreversible degradation, which results in fluorescence quenching. Therefore, defects in PQDs significantly limit their practical application. Herein, we describe a simple method to enhance the photostability of CsPbBr₃/nCdS QDs, which involves doping their shells with aluminum. The temperature-dependent photoluminescence (PL) of colloidal CsPbBr₃/nCdS/Al₂O₃ QDs is investigated, and the thermal quenching of PL, blue shift of the optical band gap, and PL line width broadening are observed in each QD sample. Al₂O₃ layers on the CsPbBr₃/nCdS QDs can effectively prevent photodegradation. Nonlinear, temperature-dependent exciton-phonon coupling and lattice dilation leads to radiative and nonradiative relaxation processes at temperatures ranging from 10 to 300 K; moreover, changes in the band gap and PL spectral line broadening are observed.

Atomic-Scale Insights into the Oxidation of Aluminum

The surface oxidation of aluminum is still poorly understood despite its vital role as an insulator in electronics, in aluminum-air batteries, and in protecting the metal against corrosion. Here we use atomic resolution imaging in an environmental transmission electron microscope (TEM) to investigate the mechanism of aluminum oxide formation. Harnessing electron beam sputtering we prepare a pristine, oxide-free metal surface in the TEM. This allows us to study, as a function of crystallographic orientation and oxygen gas pressure, the full oxide growth regime from the first oxide nucleation to a complete saturated, few-nanometers-thick surface film.

Oxidation Protection with Amorphous Surface Oxides: Thermodynamic Insights from Ab Initio Simulations on Aluminum

Native surface films play a key role in the oxidation and corrosion protection of functional and structural materials. Here, we present a fully ab initio approach for understanding the thermodynamic driving force behind the initial phase selection among amorphous and crystalline structures for a surface film growing on a crystalline substrate. We apply the approach to elucidate the competition among corundum (α), spinel (γ), and amorphous (am.) Al₂O₃ films growing on aluminum metal. We show that the amorphous Al₂O₃ film becomes thermodynamically the most stable form below around ∼1 nm, that is, the relative energetic stabilities of thin polymorphic Al₂O films follow am. < γ < α. As the film thickness increases, the relative stability relation first changes to γ < α < am. and then to the bulk limit of α < γ < am. The nanoscale γ films distort substantially to form exclusively four- and fivefold-coordinated Al-O polyhedra, lose the close-packed O framework, and become "amorphous-like", that is, exhibit both short-range order and energetic characteristics that are commensurate with the amorphous form. Our results provide a quantitative, first-principles confirmation for the early hypotheses on the thermodynamic stability of amorphous surface films and provide insights for the critical role they play in oxidation protection. Handling the complexities associated with the initial film growth, including bulk, surface, interface, and strain energy effects in realistically complex ab initio simulations, we expect this approach to contribute to understanding of the mechanism behind effective passivation films for aluminum alloys and beyond.

Comparative Study of the Oxidation of NiAl(100) by Molecular Oxygen and Water Vapor Using Ambient-Pressure X-ray Photoelectron Spectroscopy

The oxidation behavior of NiAl(100) by molecular oxygen and water vapor under a near-ambient pressure of 0.2 Torr is monitored using ambient-pressure X-ray photoelectron spectroscopy. O₂ exposure leads to the selective oxidation of Al at temperatures ranging from 40 to 500 °C. By contrast, H₂O exposure results in the selective oxidation of Al at 40 and 200 °C, and increasing the oxidation temperature above 300 °C leads to simultaneous formation of both Al and Ni oxides. These results demonstrate that the O₂ oxidation forms a nearly stoichiometric Al₂O₃ structure that provides improved protection to the metallic substrate by barring the outward diffusion of metals. By contrast, the H₂O oxidation results in the formation of a defective oxide layer that allows outward diffusion of Ni at elevated temperatures for simultaneous NiO formation.

H₂O Dissociation-Induced Aluminum Oxide Growth on Oxidized Al(111) Surfaces

The interaction of water vapor with amorphous aluminum oxide films on Al(111) is studied using X-ray photoelectron spectroscopy to elucidate the passivation mechanism of the oxidized Al(111) surfaces. Exposure of the aluminum oxide film to water vapor results in self-limiting Al2O3/Al(OH)3 bilayer film growth via counter-diffusion of both ions, Al outward and OH inward, where a thinner starting aluminum oxide film is more reactive toward H2O dissociation-induced oxide growth because of the thickness-dependent ionic transport in the aluminum oxide film. The aluminum oxide film exhibits reactivity toward H2O dissociation in both low-vapor pressure [p(H2O) = 1 × 10(-6) Torr] and intermediate-vapor pressure [p(H2O) = 5 Torr] regimes. Compared to the oxide film growth by exposure to a p(H2O) of 1 × 10(-6) Torr, the exposure to a p(H2O) of 5 Torr results in the formation of a more open structure of the inner Al(OH)3 layer and a more compact outer Al2O3 layer, demonstrating the vapor-pressure-dependent atomic structure in the passivating layer.

Analysis of the laser oxidation kinetics process of In-In(2)O(3) MTMO photomasks by laser direct writing

One kind of novel grayscale photomask based on Metal-transparent-metallic-oxides (MTMOs) system fabricated by laser direct writing was demonstrated recently. Here, a multilayer oxidation model of In-In(2)O(3) film with a glass substrate was proposed to study the pulsed laser-induced oxidation mechanism. The distribution of the electromagnetic field in the film is calculated by the transfer matrix method. Temperature fields of the model are simulated based on the heat transfer equations with the Finite-Difference Time-Domain method. The oxidation kinetics process is studied based on the laser-induced Cabrera-Mott theory. The simulated oxidation processes are consistent with the experimental results, which mean that our laser-induced oxidation model can successfully interpret the fabrication mechanism of MTMO grayscale photomasks.

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO₂/TiO₂ (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.

Mechanism for limiting thickness of thin oxide films on aluminum

A first-principles account of the observed limiting thickness of oxide films formed on aluminum during oxidizing conditions is presented. The results uncover enhanced bonding of oxygen to thin alumina films in contact with metallic aluminum that stems from charge transfer between a reconstructed oxide-metal interface and the adsorbed molecules. The first-principles results are compared with the traditional Cabrera-Mott (CM) model, which is a classical continuum model. Within the CM model, charged surface oxygen species and metal ions generate a (Mott) potential that drives oxidation. An apparent limiting thickness is observed as the oxidation rate decreases rapidly with film growth. The present results support experimental estimates of the Mott potential and film thicknesses. In contrast to the CM model, however, the calculations reveal a real limiting thickness that originates from a diminishing oxygen adsorption energy beyond a certain oxide film thickness.

X-ray photoelectron spectroscopy study of the passivation of NiAl(100) by water vapor

The oxidation of NiAl(100) surfaces by water vapor is studied using X-ray photoelectron spectroscopy (XPS) to elucidate the effect of temperature and vapor pressure on the surface passivation mechanism of the NiAl alloy. The water-vapor oxidation at ambient temperature (25 °C) results in self-limiting Al(OH)3/Al2O3 bilayer film growth to a less extent of the limiting thickness regimes, in which the growth of the inner Al2O3 layer occurs via dehydration of the outer Al(OH)3 layer. The growth of the passivating overlayer at the ambient temperature depletes Al and forms a Ni-rich layer at the oxide/alloy interface that impedes supply of Al atoms to the outer surface for Al(OH)3 formation via the hydration reaction, whereby resulting in a more Al-deficient structure of the outer Al(OH)3 layer upon increasing the vapor pressure. In contrast, the water-vapor oxidation at 300 °C results in Al2O3 single-layer film growth to a larger limiting thickness without involving the transient hydroxide phase of Al(OH)3. It is shown that increasing the oxidation temperatures results in the formation of a more compact Al2O3 film owning to the enhanced bulk diffusion rate that maintains an adequate supply of Al atoms to the oxide/alloy interface to sustain the oxide film growth to the full extent of the limiting thickness.