1
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Seidelmann T, Schimpf C, Bracht TK, Cosacchi M, Vagov A, Rastelli A, Reiter DE, Axt VM. Two-Photon Excitation Sets Limit to Entangled Photon Pair Generation from Quantum Emitters. PHYSICAL REVIEW LETTERS 2022; 129:193604. [PMID: 36399754 DOI: 10.1103/physrevlett.129.193604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Accepted: 09/21/2022] [Indexed: 06/16/2023]
Abstract
Entangled photon pairs are key to many novel applications in quantum technologies. Semiconductor quantum dots can be used as sources of on-demand, highly entangled photons. The fidelity to a fixed maximally entangled state is limited by the excitonic fine-structure splitting. This work demonstrates that, even if this splitting is absent, the degree of entanglement cannot reach unity when the excitation pulse in a two-photon resonance scheme has a finite duration. The degradation of the entanglement has its origin in a dynamically induced splitting of the exciton states caused by the laser pulse itself. Hence, in the setting explored here, the excitation process limits the achievable concurrence for entangled photons generated in an optically excited four-level quantum emitter.
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Affiliation(s)
- T Seidelmann
- Lehrstuhl für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany
| | - C Schimpf
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | - T K Bracht
- Institut für Festkörpertheorie, Universität Münster, 48149 Münster, Germany
| | - M Cosacchi
- Lehrstuhl für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany
| | - A Vagov
- Lehrstuhl für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany
| | - A Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | - D E Reiter
- Institut für Festkörpertheorie, Universität Münster, 48149 Münster, Germany
| | - V M Axt
- Lehrstuhl für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany
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2
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Schöll E, Schweickert L, Hanschke L, Zeuner KD, Sbresny F, Lettner T, Trivedi R, Reindl M, Covre da Silva SF, Trotta R, Finley JJ, Vučković J, Müller K, Rastelli A, Zwiller V, Jöns KD. Crux of Using the Cascaded Emission of a Three-Level Quantum Ladder System to Generate Indistinguishable Photons. PHYSICAL REVIEW LETTERS 2020; 125:233605. [PMID: 33337175 DOI: 10.1103/physrevlett.125.233605] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Accepted: 10/22/2020] [Indexed: 06/12/2023]
Abstract
We investigate the degree of indistinguishability of cascaded photons emitted from a three-level quantum ladder system; in our case the biexciton-exciton cascade of semiconductor quantum dots. For the three-level quantum ladder system we theoretically demonstrate that the indistinguishability is inherently limited for both emitted photons and determined by the ratio of the lifetimes of the excited and intermediate states. We experimentally confirm this finding by comparing the quantum interference visibility of noncascaded emission and cascaded emission from the same semiconductor quantum dot. Quantum optical simulations produce very good agreement with the measurements and allow us to explore a large parameter space. Based on our model, we propose photonic structures to optimize the lifetime ratio and overcome the limited indistinguishability of cascaded photon emission from a three-level quantum ladder system.
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Affiliation(s)
- Eva Schöll
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Lucas Schweickert
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Lukas Hanschke
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology, Schellingstr. 4, 80799 Munich, Germany
| | - Katharina D Zeuner
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Friedrich Sbresny
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology, Schellingstr. 4, 80799 Munich, Germany
| | - Thomas Lettner
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Rahul Trivedi
- Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
| | - Marcus Reindl
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | | | - Rinaldo Trotta
- Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 1, I-00185 Roma, Italy
| | - Jonathan J Finley
- Munich Center for Quantum Science and Technology, Schellingstr. 4, 80799 Munich, Germany
- Walter Schottky Institut and Physik Department, Technische Universität München, 85748 Garching, Germany
| | - Jelena Vučković
- Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
| | - Kai Müller
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology, Schellingstr. 4, 80799 Munich, Germany
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | - Val Zwiller
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Klaus D Jöns
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
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3
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Huang X, Chen L, Zhang C, Qin Z, Yu B, Wang X, Xiao M. Inhomogeneous Biexciton Binding in Perovskite Semiconductor Nanocrystals Measured with Two-Dimensional Spectroscopy. J Phys Chem Lett 2020; 11:10173-10181. [PMID: 33197186 DOI: 10.1021/acs.jpclett.0c03153] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Perovskite semiconductor nanocrystals have emerged as an excellent family of materials for optoelectronic applications, where biexciton interaction is essential for optical gain generation and quantum light emission. However, the strength of biexciton interaction remains highly controversial due to the entangled spectral features of the exciton- and biexciton-related transitions in conventional measurement approaches. Here, we tackle the limitation by using polarization-dependent two-dimensional electronic spectroscopy and quantify the excitation energy-dependent biexciton binding energy at cryogenic temperatures. The biexciton binding energy increases with excitation energy, which can be modeled as a near inverse-square size dependence in the effective mass approximation considering the quantum confinement effect. The spectral line width for the exciton-biexciton transition is much broader than that for the ground state to exciton transition, suggesting weakly correlated broadening between these transitions. These inhomogeneity effects should be carefully considered for the future demonstration of optoelectronic applications relying on coherent exciton-biexciton interactions.
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Affiliation(s)
- Xinyu Huang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lan Chen
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Chunfeng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhengyuan Qin
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Buyang Yu
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Min Xiao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States
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4
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Yu Y, Zhong H, Yang J, Liu L, Liu J, Yu S. Highly uniform and symmetric epitaxial InAs quantum dots embedded inside Indium droplet etched nanoholes. NANOTECHNOLOGY 2019; 30:485001. [PMID: 31469109 DOI: 10.1088/1361-6528/ab3efb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
III-V semiconductor quantum dots (QDs) obtained by local droplet etching technology provide a material platform for generation of non-classic light. However, using this technique to fabricate single emitters for a broad spectral range remains a significant challenge. Herein, we successfully extend the QD emission wavelength to 850-880 nm via highly uniform and symmetric InAs QDs located inside indium-droplet-etching nanoholes. The evolution of InGaAs nanostructures by high temperature indium droplet epitaxy on GaAs substrate is revealed. By carefully designing the appropriate growth conditions, symmetric QDs with the a small fine structure splitting of only ∼4.4 ± 0.8 μeV are demonstrated. Averaging over the emission energies of 32 QDs, an ensemble broadening of 12 meV is observed. Individual QDs are shown to emit nonclassically with clear evidence of photon antibunching. These highly uniform and symmetric nanostructures represent a very promising novel strategy for quantum information applications.
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Affiliation(s)
- Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, People's Republic of China. Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha, 410073, People's Republic of China
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5
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Basso Basset F, Rota MB, Schimpf C, Tedeschi D, Zeuner KD, Covre da Silva SF, Reindl M, Zwiller V, Jöns KD, Rastelli A, Trotta R. Entanglement Swapping with Photons Generated on Demand by a Quantum Dot. PHYSICAL REVIEW LETTERS 2019; 123:160501. [PMID: 31702339 DOI: 10.1103/physrevlett.123.160501] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2019] [Indexed: 06/10/2023]
Abstract
Photonic entanglement swapping, the procedure of entangling photons without any direct interaction, is a fundamental test of quantum mechanics and an essential resource to the realization of quantum networks. Probabilistic sources of nonclassical light were used for seminal demonstration of entanglement swapping, but applications in quantum technologies demand push-button operation requiring single quantum emitters. This, however, turned out to be an extraordinary challenge due to the stringent prerequisites on the efficiency and purity of the generation of entangled states. Here we show a proof-of-concept demonstration of all-photonic entanglement swapping with pairs of polarization-entangled photons generated on demand by a GaAs quantum dot without spectral and temporal filtering. Moreover, we develop a theoretical model that quantitatively reproduces the experimental data and provides insights on the critical figures of merit for the performance of the swapping operation. Our theoretical analysis also indicates how to improve state-of-the-art entangled-photon sources to meet the requirements needed for implementation of quantum dots in long-distance quantum communication protocols.
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Affiliation(s)
- F Basso Basset
- Department of Physics, Sapienza University of Rome, 00185 Rome, Italy
| | - M B Rota
- Department of Physics, Sapienza University of Rome, 00185 Rome, Italy
| | - C Schimpf
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, 4040 Linz, Austria
| | - D Tedeschi
- Department of Physics, Sapienza University of Rome, 00185 Rome, Italy
| | - K D Zeuner
- Department of Applied Physics, Royal Institute of Technology, 106 91 Stockholm, Sweden
| | - S F Covre da Silva
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, 4040 Linz, Austria
| | - M Reindl
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, 4040 Linz, Austria
| | - V Zwiller
- Department of Applied Physics, Royal Institute of Technology, 106 91 Stockholm, Sweden
| | - K D Jöns
- Department of Applied Physics, Royal Institute of Technology, 106 91 Stockholm, Sweden
| | - A Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, 4040 Linz, Austria
| | - R Trotta
- Department of Physics, Sapienza University of Rome, 00185 Rome, Italy
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6
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Gurioli M, Wang Z, Rastelli A, Kuroda T, Sanguinetti S. Droplet epitaxy of semiconductor nanostructures for quantum photonic devices. NATURE MATERIALS 2019; 18:799-810. [PMID: 31086322 DOI: 10.1038/s41563-019-0355-y] [Citation(s) in RCA: 54] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2016] [Accepted: 03/22/2019] [Indexed: 05/25/2023]
Abstract
The long dreamed 'quantum internet' would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots (QDs) are very attractive, as they can be integrated with other photonic and electronic components in miniaturized chips. In the early 1990s two approaches were developed to synthetize self-assembled epitaxial semiconductor QDs, or 'artificial atoms'-namely, the Stranski-Krastanov (SK) and the droplet epitaxy (DE) methods. Because of its robustness and simplicity, the SK method became the workhorse to achieve several breakthroughs in both fundamental and technological areas. The need for specific emission wavelengths or structural and optical properties has nevertheless motivated further research on the DE method and its more recent development, local droplet etching (LDE), as complementary routes to obtain high-quality semiconductor nanostructures. The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometimes even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the achievements and challenges that are still open, in view of applications in quantum communication and technology.
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Affiliation(s)
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China
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7
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Wang H, Hu H, Chung TH, Qin J, Yang X, Li JP, Liu RZ, Zhong HS, He YM, Ding X, Deng YH, Dai Q, Huo YH, Höfling S, Lu CY, Pan JW. On-Demand Semiconductor Source of Entangled Photons Which Simultaneously Has High Fidelity, Efficiency, and Indistinguishability. PHYSICAL REVIEW LETTERS 2019; 122:113602. [PMID: 30951338 DOI: 10.1103/physrevlett.122.113602] [Citation(s) in RCA: 66] [Impact Index Per Article: 13.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2018] [Indexed: 06/09/2023]
Abstract
An outstanding goal in quantum optics and scalable photonic quantum technology is to develop a source that each time emits one and only one entangled photon pair with simultaneously high entanglement fidelity, extraction efficiency, and photon indistinguishability. By coherent two-photon excitation of a single InGaAs quantum dot coupled to a circular Bragg grating bull's-eye cavity with a broadband high Purcell factor of up to 11.3, we generate entangled photon pairs with a state fidelity of 0.90(1), pair generation rate of 0.59(1), pair extraction efficiency of 0.62(6), and photon indistinguishability of 0.90(1) simultaneously. Our work will open up many applications in high-efficiency multiphoton experiments and solid-state quantum repeaters.
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Affiliation(s)
- Hui Wang
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hai Hu
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - T-H Chung
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian Qin
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaoxia Yang
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - J-P Li
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - R-Z Liu
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - H-S Zhong
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Y-M He
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xing Ding
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Y-H Deng
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qing Dai
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Y-H Huo
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Sven Höfling
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- Technische Physik, Physikalisches Instität and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universitat Würzburg, Am Hubland, D-97074 Wüzburg, Germany
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, United Kingdom
| | - Chao-Yang Lu
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian-Wei Pan
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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8
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Two-photon interference of polarization-entangled photons in a Franson interferometer. Sci Rep 2017; 7:5772. [PMID: 28720885 PMCID: PMC5516045 DOI: 10.1038/s41598-017-06196-x] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2017] [Accepted: 06/07/2017] [Indexed: 11/25/2022] Open
Abstract
We present two-photon interference experiments with polarization-entangled photon pairs in a polarization-based Franson-type interferometer. Although the two photons do not meet at a common beamsplitter, a phase-insensitive Hong-Ou-Mandel type two-photon interference peak and dip fringes are observed, resulting from the two-photon interference effect between two indistinguishable two-photon probability amplitudes leading to a coincidence detection. A spatial quantum beating fringe is also measured for nondegenerate photon pairs in the same interferometer, although the two-photon states have no frequency entanglement. When unentangled polarization-correlated photons are used as an input state, the polarization entanglement is successfully recovered through the interferometer via delayed compensation.
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9
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Orieux A, Versteegh MAM, Jöns KD, Ducci S. Semiconductor devices for entangled photon pair generation: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2017; 80:076001. [PMID: 28346219 DOI: 10.1088/1361-6633/aa6955] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.
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Affiliation(s)
- Adeline Orieux
- Sorbonne Universités, UPMC Univ Paris 06, CNRS, Laboratoire d'Informatique de Paris 6 (LIP6), 4 Place Jussieu, 75005 Paris, France. IRIF UMR 8243, Université Paris Diderot, Sorbonne Paris Cité, CNRS, 75013 Paris, France
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10
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Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots. Nat Commun 2017; 8:15506. [PMID: 28548081 PMCID: PMC5458553 DOI: 10.1038/ncomms15506] [Citation(s) in RCA: 76] [Impact Index Per Article: 10.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/25/2016] [Accepted: 04/03/2017] [Indexed: 12/25/2022] Open
Abstract
The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g(2)(0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies. Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Huber et al. demonstrate that droplet-etched gallium arsenide quantum dots can emit highly indistinguishable photon pairs with a high degree of entanglement.
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11
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Trotta R, Martín-Sánchez J, Wildmann JS, Piredda G, Reindl M, Schimpf C, Zallo E, Stroj S, Edlinger J, Rastelli A. Wavelength-tunable sources of entangled photons interfaced with atomic vapours. Nat Commun 2016; 7:10375. [PMID: 26815609 PMCID: PMC4737804 DOI: 10.1038/ncomms10375] [Citation(s) in RCA: 95] [Impact Index Per Article: 11.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2015] [Accepted: 12/03/2015] [Indexed: 12/03/2022] Open
Abstract
The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled photons. A single semiconductor quantum dot is one of the most attractive, as it can generate indistinguishable entangled photons deterministically and is compatible with current photonic-integration technologies. However, the lack of control over the energy of the entangled photons is hampering the exploitation of dissimilar quantum dots in protocols requiring the teleportation of quantum entanglement over remote locations. Here we introduce quantum dot-based sources of polarization-entangled photons whose energy can be tuned via three-directional strain engineering without degrading the degree of entanglement of the photon pairs. As a test-bench for quantum communication, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using optoelectronic devices.
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Affiliation(s)
- Rinaldo Trotta
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria
| | - Javier Martín-Sánchez
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria
| | - Johannes S. Wildmann
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria
| | - Giovanni Piredda
- Forschungszentrum Mikrotechnik, FH Vorarlberg, Hochschulstr. 1, A-6850 Dornbirn, Austria
| | - Marcus Reindl
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria
| | - Christian Schimpf
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria
| | - Eugenio Zallo
- Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
- Paul-Drude-Institut für Festkörperelektronik, Hausvogteilplatz 5-7, 10117 Berlin, Germany
| | - Sandra Stroj
- Forschungszentrum Mikrotechnik, FH Vorarlberg, Hochschulstr. 1, A-6850 Dornbirn, Austria
| | - Johannes Edlinger
- Forschungszentrum Mikrotechnik, FH Vorarlberg, Hochschulstr. 1, A-6850 Dornbirn, Austria
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria
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12
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Gazzano O, Almeida MP, Nowak AK, Portalupi SL, Lemaître A, Sagnes I, White AG, Senellart P. Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source. PHYSICAL REVIEW LETTERS 2013; 110:250501. [PMID: 23829719 DOI: 10.1103/physrevlett.110.250501] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2013] [Indexed: 06/02/2023]
Abstract
We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.
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Affiliation(s)
- O Gazzano
- Laboratoire de Photonique et de Nanostructures, CNRS, UPR20, Route de Nozay, 91460 Marcoussis, France
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Gazzano O, Michaelis de Vasconcellos S, Arnold C, Nowak A, Galopin E, Sagnes I, Lanco L, Lemaître A, Senellart P. Bright solid-state sources of indistinguishable single photons. Nat Commun 2013; 4:1425. [PMID: 23385570 DOI: 10.1038/ncomms2434] [Citation(s) in RCA: 115] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2012] [Accepted: 01/02/2013] [Indexed: 11/09/2022] Open
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