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Namiki W, Tsuchiya T, Takayanagi M, Higuchi T, Terabe K. Room-Temperature Manipulation of Magnetization Angle, Achieved with an All-Solid-State Redox Device. ACS NANO 2020; 14:16065-16072. [PMID: 33137249 DOI: 10.1021/acsnano.0c07906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
An all-solid-state redox device, composed of magnetite (Fe3O4) thin film and Li+ conducting electrolyte thin film, was fabricated for the manipulation of a magnetization angle at room temperature (RT). This is a key technology for the creation of efficient spintronics devices, but has not yet been achieved at RT by other carrier doping methods. Variations in magnetization angle and magnetic stability were precisely tracked through the use of planar Hall measurements at RT. The magnetization angle was reversibly manipulated at 10° by maintaining magnetic stability. Meanwhile, the manipulatable angle reached 56°, although the manipulation became irreversible when the magnetic stability was reduced. This large manipulation of magnetic angle was achieved through tuning of the 3d electron number and modulation of the internal strain in the Fe3O4 due to the insertion of high-density Li+ (approximately 1021 cm-3). This RT manipulation is applicable to highly integrated spintronics devices due to its simple structure and low electric power consumption.
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Affiliation(s)
- Wataru Namiki
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Takashi Tsuchiya
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Makoto Takayanagi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Kazuya Terabe
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Nozaki T, Yamamoto T, Miwa S, Tsujikawa M, Shirai M, Yuasa S, Suzuki Y. Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM. MICROMACHINES 2019; 10:E327. [PMID: 31096668 PMCID: PMC6562605 DOI: 10.3390/mi10050327] [Citation(s) in RCA: 60] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/24/2019] [Revised: 05/10/2019] [Accepted: 05/12/2019] [Indexed: 12/04/2022]
Abstract
The electron spin degree of freedom can provide the functionality of "nonvolatility" in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.
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Affiliation(s)
- Takayuki Nozaki
- National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.
| | - Tatsuya Yamamoto
- National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.
| | - Shinji Miwa
- The Institute of Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8531, Japan.
- Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan.
| | - Masahito Tsujikawa
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan.
| | - Masafumi Shirai
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan.
| | - Shinji Yuasa
- National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.
| | - Yoshishige Suzuki
- National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.
- Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan.
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