1
|
Nadeem M, Wang X. Spin Gapless Quantum Materials and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402503. [PMID: 38962884 DOI: 10.1002/adma.202402503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 06/04/2024] [Indexed: 07/05/2024]
Abstract
Quantum materials, with nontrivial quantum phenomena and mechanisms, promise efficient quantum technologies with enhanced functionalities. Quantum technology is held back because a gap between fundamental science and its implementation is not fully understood yet. In order to capitalize the quantum advantage, a new perspective is required to figure out and close this gap. In this review, spin gapless quantum materials, featured by fully spin-polarized bands and the electron/hole transport, are discussed from the perspective of fundamental understanding and device applications. Spin gapless quantum materials can be simulated by minimal two-band models and could help to understand band structure engineering in various topological quantum materials discovered so far. It is explicitly highlighted that various types of spin gapless band dispersion are fundamental ingredients to understand quantum anomalous Hall effect. Based on conventional transport in the bulk and topological transport on the boundaries, various spintronic device aspects of spin gapless quantum materials as well as their advantages in different models for topological field effect transistors are reviewed.
Collapse
Affiliation(s)
- Muhammad Nadeem
- Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS), University of Wollongong, Wollongong, New South Wales, 2525, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales, 2525, Australia
| | - Xiaolin Wang
- Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS), University of Wollongong, Wollongong, New South Wales, 2525, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales, 2525, Australia
| |
Collapse
|
2
|
Wu Y, Deng L, Tong J, Yin X, Qin G, Zhang X. Layer-Dependent Quantum Anomalous Hall and Quantum Spin Hall Effects in Two-Dimensional LiFeTe. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39046888 DOI: 10.1021/acsami.4c09774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
The emergence of an intrinsic quantum anomalous Hall (QAH) insulator with long-range magnetic order triggers unprecedented prosperity for combining topology and magnetism in low dimensions. Here, based on stacked two-dimensional LiFeTe, we confirm that magnetic coupling and topological electronic states can be simultaneously manipulated by just changing the layer numbers. Monolayer LiFeTe shows intralayer ferrimagnetic coupling, behaving as a QAH insulator with Chern number C = 2. Beyond the monolayer, the odd and even layers of LiFeTe correspond to uncompensated and compensated interlayer antiferromagnets, resulting in unexpected QAH and quantum spin Hall (QSH) states, respectively. Moreover, the spin Chern number is proportional to the stacking layer numbers in even-layer LiFeTe, proving that the spin Hall conductivity can be continuously enhanced by increasing layer numbers. Therefore, the odd-even-layer-dependent QAH and QSH effects found in LiFeTe topological insulators offer new insight into regulating quantum states in two-dimensional topological materials.
Collapse
Affiliation(s)
- Yanzhao Wu
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Li Deng
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Junwei Tong
- Department of Physics, Freie Universität Berlin, Berlin 14195, Germany
| | - Xiang Yin
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Gaowu Qin
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Xianmin Zhang
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
| |
Collapse
|
3
|
Chang ZW, Hao WC, Liu X. Design of higher Chern number two-band structures from topological defect perspective. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:425501. [PMID: 38848730 DOI: 10.1088/1361-648x/ad5599] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2024] [Accepted: 06/07/2024] [Indexed: 06/09/2024]
Abstract
In this article, we propose two methods for designing higher Chern number models from the topological defect perspective. Based on the fact that the Chern number is equal to a summation of the charges of meron defects, we show that the higher Chern number structures can be realized by either moving the positions of merons or increasing the amount of them. The combination of the two methods is also verified to be a viable approach. We shall construct several models and investigate their energy spectrum. More than one gapless state can be observed on the edges of these models. Expectedly, our theory promises to provide not only a simple approach to obtain the Chern number without computing any integrals, but also a practical technique for new material design.
Collapse
Affiliation(s)
- Zhi-Wen Chang
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - Wei-Chang Hao
- School of Physics, Beihang University, Beijing 102206, People's Republic of China
| | - Xin Liu
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, People's Republic of China
| |
Collapse
|
4
|
Bai Y, Zhang L, Mao N, Li R, Chen Z, Dai Y, Huang B, Niu C. Coupled Electronic and Magnonic Topological States in Two-Dimensional Ferromagnets. ACS NANO 2024; 18:13377-13383. [PMID: 38728267 DOI: 10.1021/acsnano.4c03529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
Magnetic materials offer a fertile playground for fundamental physics discovery, with not only electronic but also magnonic topological states intensively explored. However, one natural material with both electronic and magnonic nontrivial topologies is still unknown. Here, we demonstrate the coexistence of first-order topological magnon insulators (TMIs) and electronic second-order topological insulators (SOTIs) in 2D honeycomb ferromagnets, giving rise to the nontrivial corner states being connected by the charge-free magnonic edge states. We show that, with C 3 symmetry, the phase factor ± ϕ caused by the next nearest-neighbor Dzyaloshinskii-Moriya interaction breaks the pseudo-spin time-reversal symmetry T , which leads to the split of magnon bands, i.e., the emergence of TMIs with a nonzero Chern number of C = - 1 , in experimentally feasible candidates of MoI3, CrSiTe3, and CrGeTe3 monolayers. Moreover, protected by the C 3 symmetry, the electronic SOTIs characterized by nontrivial corner states are obtained, bridging the topological aspect of fermions and bosons with a high possibility of innovative applications in spintronics devices.
Collapse
Affiliation(s)
- Yingxi Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lichuan Zhang
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Ning Mao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Runhan Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Zhiqi Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Chengwang Niu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| |
Collapse
|
5
|
Jiang Y, Wang H, Bao K, Liu Z, Wang J. Monolayer V_{2}MX_{4}: A New Family of Quantum Anomalous Hall Insulators. PHYSICAL REVIEW LETTERS 2024; 132:106602. [PMID: 38518306 DOI: 10.1103/physrevlett.132.106602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 10/18/2023] [Accepted: 02/09/2024] [Indexed: 03/24/2024]
Abstract
We theoretically propose that the van der Waals layered ternary transition metal chalcogenide V_{2}MX_{4} (M=W, Mo; X=S, Se) is a new family of quantum anomalous Hall insulators with sizable bulk gap and Chern number C=-1. The large topological gap originates from the deep band inversion between spin-up bands contributed by d_{xz}, d_{yz} orbitals of V and spin-down band from d_{z^{2}} orbital of M at the Fermi level. Remarkably, the Curie temperature of monolayer V_{2}MX_{4} is predicted to be much higher than that of monolayer MnBi_{2}Te_{4}. Furthermore, the thickness dependence of the Chern number for few multilayers shows interesting oscillating behavior. The general physics from the d orbitals here applies to a large class of ternary transition metal chalcogenide such as Ti_{2}WX_{4} with the space group P-42m. These interesting predictions, if realized experimentally, could greatly promote the research and application of topological quantum physics.
Collapse
Affiliation(s)
- Yadong Jiang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Huan Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Kejie Bao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zhaochen Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jing Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- Hefei National Laboratory, Hefei 230088, China
| |
Collapse
|
6
|
Huang K, Li L, Zhao W, Wang X. Magnetization direction-controlled topological band structure in TlTiX (X = Si, Ge) monolayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:225702. [PMID: 38382124 DOI: 10.1088/1361-648x/ad2bda] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Accepted: 02/21/2024] [Indexed: 02/23/2024]
Abstract
The quantum anomalous Hall (QAH) insulator is a vital material for the investigation of emerging topological quantum effects, but its extremely low working temperature limits experiments. Apart from the temperature challenge, effective regulation of the topological state of QAH insulators is another crucial concern. Here, by first-principles calculations, we find a family of stable two-dimensional materials TlTiX (X = Si, Ge) are large-gap QAH insulators. Their extremely robust ferromagnetic (FM) ground states are determined by both the direct- and super-exchange FM coupling. In the absence of spin-orbit coupling (SOC), there exist a spin-polarized crossing point located at eachKandK' points, respectively. The SOC effect results in the spontaneous breaking ofC2symmetry and introduces a mass term, giving rise to a QAH state with sizable band gap. The tiny magnetocrystalline anisotropic energy (MAE) implies that an external magnetic field can be easily used to align magnetization deviating fromzdirection to thex-yplane, thereby leading to a transformation of the electronic state from the QAH state to the Weyl half semimetals state, which indicate monolayers TlTiX (X = Si, Ge) exhibit a giant magneto topological band effect. Finally, we examined the impact of stress on the band gap and MAE, which underlies the reasons for the giant magneto topological band effect attributed to the crystal field. These findings present novel prospects for the realization of large-gap QAH states with the characteristic of easily modifiable topological states.
Collapse
Affiliation(s)
- Keer Huang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Lei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Wu Zhao
- School of Information Science and Technology, Northwest University, Xi'an 710072, People's Republic of China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| |
Collapse
|
7
|
Xue F, Hou Y, Wang Z, Xu Z, He K, Wu R, Xu Y, Duan W. Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures. Natl Sci Rev 2024; 11:nwad151. [PMID: 38312389 PMCID: PMC10833467 DOI: 10.1093/nsr/nwad151] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 02/24/2023] [Accepted: 04/03/2023] [Indexed: 02/02/2024] Open
Abstract
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.
Collapse
Affiliation(s)
- Feng Xue
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yusheng Hou
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Zhe Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Computational Physical Sciences, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zhiming Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Ke He
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California-Irvine, Irvine, CA 92697, USA
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Tencent Quantum Laboratory, Tencent Technology (Shenzhen) Co. Ltd, Shenzhen 518057, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Wenhui Duan
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
| |
Collapse
|
8
|
Zou X, Li R, Chen Z, Dai Y, Huang B, Niu C. Engineering Gapless Edge States from Antiferromagnetic Chern Homobilayer. NANO LETTERS 2024; 24:450-457. [PMID: 38112315 DOI: 10.1021/acs.nanolett.3c04304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
We put forward that stacked Chern insulators with opposite chiralities offer a strategy to achieve gapless helical edge states in two dimensions. We employ the square lattice as an example and elucidate that the gapless chiral and helical edge states emerge in the monolayer and antiferromagnetically stacked bilayer, characterized by Chern number C = - 1 and spin Chern number C S = - 1 , respectively. Particularly, for a topological phase transition to the normal insulator in the stacked bilayer, a band gap closing and reopening procedure takes place accompanied by helical edge states disappearing, where the Chern insulating phase in the monolayer vanishes at the same time. Moreover, EuO is revealed as a suitable candidate for material realization. This work is not only valuable to the research of the quantum anomalous Hall effect but also offers a favorable platform to realize magnetic topologically insulating materials for spintronics applications.
Collapse
Affiliation(s)
- Xiaorong Zou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
| | - Runhan Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
| | - Zhiqi Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
| | - Chengwang Niu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
| |
Collapse
|
9
|
Lian H, Xu X, Han Y, Li J, Zhou W, Yao X, Lu J, Zhang X. Insight into the quantum anomalous Hall states in two-dimensional kagome Cr 3Se 4 and Fe 3S 4 monolayers. NANOSCALE 2023; 15:18745-18752. [PMID: 37955150 DOI: 10.1039/d3nr03582d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
To realize the quantum anomalous Hall (QAH) effect in two-dimensional (2D) intrinsic magnetic materials, which combines insulating bulk states and metallic edge channel states, is still challenging in experiment. Here, based on first-principles calculations, we predicted two stable kagome-latticed QAH insulators: Cr3Se4 and Fe3S4 monolayers, with the Chern number C = 1. It is found that both structures exhibit a large magnetic anisotropy energy and sizable band gaps, and a topological phase transition from C = -1 to C = 1 occurs when the magnetization orientation changes from the z-axis to the -z-axis. Remarkably, the non-trivial topological properties are robust against biaxial strains of up to ±6%. Furthermore, a variable high Chern number of C = 2 or C = 3 can be observed by stacking two or three layers of the QAH monolayer with an MoS2 insulator. Our results signify that such layered kagome materials can be promising platforms for exploring novel QAH physics.
Collapse
Affiliation(s)
- Huijie Lian
- College of Physics and Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China.
| | - Xiaokang Xu
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China.
| | - Ying Han
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China.
| | - Jie Li
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China.
| | - Wenqi Zhou
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China.
| | - Xiaojing Yao
- College of Physics and Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China.
| | - Jinlian Lu
- Department of Physics, Yancheng Institute of Technology, Yancheng, Jiangsu 224051, China.
| | - Xiuyun Zhang
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China.
| |
Collapse
|
10
|
Zhang X, Wang X, He T, Wang L, Yu WW, Liu Y, Liu G, Cheng Z. Magnetic topological materials in two-dimensional: theory, material realization and application prospects. Sci Bull (Beijing) 2023; 68:2639-2657. [PMID: 37734982 DOI: 10.1016/j.scib.2023.09.004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Revised: 07/12/2023] [Accepted: 08/23/2023] [Indexed: 09/23/2023]
Abstract
Two-dimensional (2D) magnetism and nontrivial band topology are both areas of research that are currently receiving significant attention in the study of 2D materials. Recently, a novel class of materials has emerged, known as 2D magnetic topological materials, which elegantly combine 2D magnetism and nontrivial topology. This field has garnered increasing interest, especially due to the emergence of several novel magnetic topological states that have been generalized into the 2D scale. These states include antiferromagnetic topological insulators/semimetals, second-order topological insulators, and topological half-metals. Despite the rapid advancements in this emerging research field in recent years, there have been few comprehensive summaries of the state-of-the-art progress. Therefore, this review aims to provide a thorough analysis of current progress on 2D magnetic topological materials. We cover various 2D magnetic topological insulators, a range of 2D magnetic topological semimetals, and the novel 2D topological half-metals, systematically analyzing the basic topological theory, the course of development, the material realization, and potential applications. Finally, we discuss the challenges and prospects for 2D magnetic topological materials, highlighting the potential for future breakthroughs in this exciting field.
Collapse
Affiliation(s)
- Xiaoming Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Xiaotian Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Tingli He
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Lirong Wang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Wei-Wang Yu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Ying Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Guodong Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.
| |
Collapse
|
11
|
Liu Y, Li J, Liu Q. Chern-Insulator Phase in Antiferromagnets. NANO LETTERS 2023; 23:8650-8656. [PMID: 37704584 DOI: 10.1021/acs.nanolett.3c02489] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
The long-sought Chern insulators that manifest a quantum anomalous Hall effect are typically considered to occur in ferromagnets. Here, we theoretically predict the realizabilities of Chern insulators in antiferromagnets, in which the magnetic sublattices are connected by symmetry operators enforcing zero net magnetic moment. Our symmetry analysis provides comprehensive magnetic layer point groups that allow antiferromagnetic (AFM) Chern insulators, revealing that an in-plane magnetic configuration is required. Followed by first-principles calculations, such design principles naturally lead to two categories of material candidates, exemplified by monolayer RbCr4S8 and bilayer Mn3Sn with collinear and noncollinear AFM orders, respectively. We further show that the Chern number could be tuned by slight ferromagnetic canting as an effective pivot. Our work elucidates the nature of the Chern-insulator phase in AFM systems, paving a new avenue for designing quantum anomalous Hall insulators with the integration of nondissipative transport and the promising advantages of the AFM order.
Collapse
Affiliation(s)
- Yuntian Liu
- Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Jiayu Li
- Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Qihang Liu
- Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory for Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| |
Collapse
|
12
|
Zhan F, Zeng J, Chen Z, Jin X, Fan J, Chen T, Wang R. Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number. NANO LETTERS 2023; 23:2166-2172. [PMID: 36883797 DOI: 10.1021/acs.nanolett.2c04651] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Here, we propose that Floquet engineering offers a strategy to realize the nonequilibrium quantum anomalous Hall effect (QAHE) with tunable Chern number. Using first-principles calculations and Floquet theorem, we unveil that QAHE related to valley polarization (VP-QAHE) is formed from the hybridization of Floquet sidebands in the two-dimensional family MSi2Z4 (M = Mo, W, V; Z = N, P, As) by irradiating circularly polarized light (CPL). Through the tuning of frequency, intensity, and handedness of CPL, the Chern number of VP-QAHE is highly tunable and up to C = ±4, which attributes to light-induced trigonal warping and multiple-band inversion at different valleys. The chiral edge states and quantized plateau of Hall conductance are visible inside the global band gap, thereby facilitating the experimental measurement. Our work not only establishes Floquet engineering of nonequilibrium VP-QAHE with tunable Chern number in realistic materials but also provides an avenue to explore emergent topological phases under light irradiation.
Collapse
Affiliation(s)
- Fangyang Zhan
- Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 400044, P. R. China
| | - Junjie Zeng
- Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 400044, P. R. China
| | - Zhuo Chen
- Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 400044, P. R. China
| | - Xin Jin
- Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 400044, P. R. China
| | - Jing Fan
- Center for Computational Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Tingyong Chen
- Shenzhen Insitute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Rui Wang
- Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University, Chongqing 400044, P. R. China
- Center of Quantum Materials and Devices, Chongqing University, Chongqing 400044, P. R. China
| |
Collapse
|
13
|
Ma C, Chen X, Jin K, Ren W, Zhong Z, Ge C, Guo E, Xu X, Zhang Q, Wang C. The Evolution of Band Topology in Two-Dimensional Weyl Half-Metals. J Phys Chem Lett 2023; 14:825-831. [PMID: 36655858 DOI: 10.1021/acs.jpclett.2c03548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional ferromagnetic Weyl half-metals that are robust against spin-orbital coupling were theoretically proposed recently, in which the nodal points and the nodal loops are protected by specific symmetries. As the symmetry of a ferromagnetic material is highly dependent on the magnetization orientation, here we predict a family of two-dimensional ferromagnetic Weyl half-metals, Mn2X3 (X = S, Se, Te) monolayers, to investigate the band topology under different magnetization orientations in the presence of spin-orbital coupling. The Curie temperatures (∼1000 K) were estimated to be much higher than room temperature due to the strong double exchange interaction and the suppression of spin fluctuation for the two-sublayer structure. Taking a Mn2Te3 monolayer as an example, we demonstrated the evolution of the nodal points and the nodal loops in the presence of spin-orbital coupling via manipulating magnetization orientation. Our work provides a family of high temperature two-dimensional ferromagnetic Weyl half-metals for investigating the nontrivial band topology.
Collapse
Affiliation(s)
- Cheng Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Xuejiao Chen
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
- Songshan Lake Materials Laboratory, Dongguan523808, China
| | - Wenning Ren
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu610225, China
| | - Zhicheng Zhong
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Erjia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Qiulin Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
- Songshan Lake Materials Laboratory, Dongguan523808, China
| |
Collapse
|