Influence of electric fields on pinning in YBa2Cu3O7- delta films

Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics

Iontronics is a newly emerging interdisciplinary concept which bridges electronics and ionics, covering electrochemistry, solid-state physics, electronic engineering, and biological sciences. The recent developments of electronic devices are highlighted, based on electric double layers formed at the interface between ionic conductors (but electronically insulators) and various electronic conductors including organics and inorganics (oxides, chalcogenide, and carbon-based materials). Particular attention is devoted to electric-double-layer transistors (EDLTs), which are producing a significant impact, particularly in electrical control of phase transitions, including superconductivity, which has been difficult or impossible in conventional all-solid-state electronic devices. Besides that, the current state of the art and the future challenges of iontronics are also reviewed for many applications, including flexible electronics, healthcare-related devices, and energy harvesting.

Nanoscale electrostatic manipulation of magnetic flux quanta in ferroelectric/superconductor BiFeO3/YBa2Cu3O(7-δ) heterostructures

Using heterostructures that combine a large-polarization ferroelectric (BiFeO3) and a high-temperature superconductor (YBa2Cu3O(7-δ)), we demonstrate the modulation of the superconducting condensate at the nanoscale via ferroelectric field effects. Through this mechanism, a nanoscale pattern of normal regions that mimics the ferroelectric domain structure can be created in the superconductor. This yields an energy landscape for magnetic flux quanta and, in turn, couples the local ferroelectric polarization to the local magnetic induction. We show that this form of magnetoelectric coupling, together with the possibility to reversibly design the ferroelectric domain structure, allows the electrostatic manipulation of magnetic flux quanta.

A heteroepitaxial perovskite metal-base transistor

'More than Moore' captures a concept for overcoming limitations in silicon electronics by incorporating new functionalities in the constituent materials. Perovskite oxides are candidates because of their vast array of physical properties in a common structure. They also enable new electronic devices based on strongly-correlated electrons. The field effect transistor and its derivatives have been the principal oxide devices investigated thus far, but another option is available in a different geometry: if the current is perpendicular to the interface, the strong internal electric fields generated at back-to-back heterojunctions can be used for oxide electronics, analogous to bipolar transistors. Here we demonstrate a perovskite heteroepitaxial metal-base transistor operating at room temperature, enabled by interface dipole engineering. Analysis of many devices quantifies the evolution from hot-electron to permeable-base behaviour. This device provides a platform for incorporating the exotic ground states of perovskite oxides, as well as novel electronic phases at their interfaces.

An alternative theory on relaxation rates in cuprate superconductors

Transport properties of high transition temperature (high-T(c)) superconductors apparently demonstrate two distinct relaxation rates in the normal state. We propose that this superficial inconsistence can be resolved with an effective carrier (quasiparticle) density n almost linear in temperature T. Experimental evidence both for and against this explanation is analyzed and we conclude that this offers a clear yet promising scenario. Band structure calculation was utilized to determine the Fermi surface topology of the cuprate superconductor versus doping. The results demonstrate that an electron-like portion of the Fermi surface exists in a wide range of doping levels even for a p-type superconductor, exemplified by La(2-x)Sr(x)CuO(4-δ) (LSCO). Such electron-like segments have also been confirmed in recent photoemission electron spectroscopy. The Coulomb interaction between electron-like and hole-like quasiparticles then forms a bound state, similar to that of an exciton. As a result the number of charge carriers upon cooling temperature is decreased. A quantum mechanical calculation of scattering cross section demonstrates that a T(2) relaxation rate is born out of an electron-hole collision process. Above the pseudogap temperature T(*) the normal state of high-T(c) cuprates is close to a two-component Fermi liquid. It, however, assumes non-Fermi-liquid behavior below T(*).

Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor

The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO(2) planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO(2) planes.

Electrostatic tuning of the hole density in NdBa2Cu3O(7-delta) films and its effect on the Hall response

We have used the ferroelectric field effect in heterostructures based on superconducting NdBa2-Cu(3)O(7-delta) and ferroelectric Pb(Zr0.2Ti0.8)O3 to electrostatically modulate in a reversible and nonvolatile fashion the hole carrier density of the superconducting layer. Reversing the ferroelectric polarization induces a constant relative change in the resistivity and Hall constant of 9% and 6%, respectively, at all temperatures above the superconducting transition. The cotangent of the Hall angle displays a T2 dependence with a slope that increases as the carrier density is reduced.

Surface conduction on insulating BaTiO3 crystal suggesting an intrinsic surface electron layer

We report conduction measurements on the clean, free surface of transparent insulating BaTiO3 single crystals in high vacuum. We find that the insulating BaTiO3 crystals exhibit surface conductance that is dependent on the spontaneous polarization, whereas no conduction perpendicular to the surface is observed. The surface conduction shows semimetallic temperature dependence and persists down to at least 100 K. The observations suggest a two-dimensional electron on a clean, free ferroelectric surface that may be regarded as a ferroelectric metal. The results have important implications for understandings of the fundamental properties of ferroelectrics, the size effect, and ferroelectric devices.

Electrostatic modulation of superconductivity in ultrathin GdBa2Cu3O7-x films

The polarization field of the ferroelectric oxide lead zirconate titanate [Pb(ZrxTi1-x)O3] was used to tune the critical temperature of the hightemperature superconducting cuprate gadolinium barium copper oxide (GdBa2Cu3O7-x) in a reversible, nonvolatile fashion. For slightly underdoped samples, a uniform shift of several Kelvin in the critical temperature was observed, whereas for more underdoped samples, an insulating state was induced. This transition from superconducting to insulating behavior does not involve chemical or crystalline modification of the material.