Critical role of surface steps in the alloying of Ge on Si(001)

Ge diffusion at the Si(100) surface

Using scanning tunneling microscopy movies, we directly observe individual embedded Ge atoms to be mobile within the Si(100)-(2x1)-Ge surface at temperatures as low as 90 degrees C. We demonstrate that Ge atoms move by exchange diffusion with (1) adsorbed monomers and (2) individual constituent atoms of adsorbed dimers. Our observations are consistent with recent density-functional theory calculations, which give the atomistic pathways and energetic barriers for both exchange mechanisms. We find that neither adsorbed monomers nor dimers can diffuse more than a few nanometers between exchange events, illustrating how Ge diffusion and intermixing are intimately coupled at the nanoscale on the Si(100) surface.

Trends in low energy electron microscopy

Low energy electron microscopy (LEEM) and spin polarized LEEM (SPLEEM) are two powerful in situ techniques for the study of surfaces, thin films and other surface-supported nanostructures. Their real-time imaging and complementary diffraction capabilities allow the study of structure, morphology, magnetism and dynamic processes with high spatial and temporal resolution. Progress in methods, instrumentation and understanding of novel contrast mechanisms that derive from the wave nature and spin degree of freedom of the electron continue to advance applications of LEEM and SPLEEM in these areas and beyond. We review here the basic imaging principles and recent developments that demonstrate the current capabilities of these techniques and suggest potential future directions.

Nanoscale pit formation at 2D Ge layers on Si: influence of energy and entropy

The structural stability of two-dimensional (2D) SiGe nanostructures is studied by scanning tunneling microscopy. The formation of pits with a diameter of 2-30 nm in one atomic layer thick Ge stripes is observed. The unanticipated pit formation occurs due to an energetically driven motion of the Ge atoms out of the Ge stripe towards the Si terminated step edge followed by an entropy driven GeSi intermixing at the step edge. Using conditions where the pits coalesce results in the formation of freestanding 8 nm wide GeSi wires on Si(111).

Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface

The chemical contrast between Si and Ge obtained by scanning tunneling microscopy on Bi-covered Si(111) surfaces is used as a tool to identify two vertical Ge/Si intermixing processes. During annealing of an initially pure Ge monolayer on Si, the intermixing is confined to the first two layers approaching a 50% Ge concentration in each layer. During epitaxial growth, a growth front induced intermixing process acting at step edges is observed. Because of the open atomic structure at the step edges, relative to the terraces, a lower activation barrier for intermixing at the step edge, compared to the terrace, is observed.