Tailoring magnetism in quantum dots

Direct Measurements of Magnetic Polarons in Cd1-xMnxSe Nanocrystals from Resonant Photoluminescence

In semiconductors, quantum confinement can greatly enhance the interaction between band carriers (electrons and holes) and dopant atoms. One manifestation of this enhancement is the increased stability of exciton magnetic polarons in magnetically doped nanostructures. In the limit of very strong 0D confinement that is realized in colloidal semiconductor nanocrystals, a single exciton can exert an effective exchange field B_ex on the embedded magnetic dopants that exceeds several tesla. Here we use the very sensitive method of resonant photoluminescence (PL) to directly measure the presence and properties of exciton magnetic polarons in colloidal Cd_1-xMn_xSe nanocrystals. Despite small Mn²⁺ concentrations (x = 0.4-1.6%), large polaron binding energies up to ∼26 meV are observed at low temperatures via the substantial Stokes shift between the pump laser and the resonant PL maximum, indicating nearly complete alignment of all Mn²⁺ spins by B_ex. Temperature and magnetic field-dependent studies reveal that B_ex ≈ 10 T in these nanocrystals, in good agreement with theoretical estimates. Further, the emission line widths provide direct insight into the statistical fluctuations of the Mn²⁺ spins. These resonant PL studies provide detailed insight into collective magnetic phenomena, especially in lightly doped nanocrystals where conventional techniques such as nonresonant PL or time-resolved PL provide ambiguous results.

Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1-x nanomesh

Voltage control of magnetism in ferromagnetic semiconductor has emerged as an appealing solution to significantly reduce the power dissipation and variability beyond current CMOS technology. However, it has been proven to be very challenging to achieve a candidate with high Curie temperature (T_c), controllable ferromagnetism and easy integration with current Si technology. Here we report the effective electric-field control of both ferromagnetism and magnetoresistance in unique Mn_xGe_1−x nanomeshes fabricated by nanosphere lithography, in which a T_c above 400 K is demonstrated as a result of size/quantum confinement. Furthermore, by adjusting Mn doping concentration, extremely giant magnetoresistance is realized from ∼8,000% at 30 K to 75% at 300 K at 4 T, which arises from a geometrically enhanced magnetoresistance effect of the unique mesh structure. Our results may provide a paradigm for fundamentally understanding the high T_c in ferromagnetic semiconductor nanostructure and realizing electric-field control of magnetoresistance for future spintronic applications.

Voltage control of magnetism in ferromagnetic semiconductor is appealing for spintronic applications, which is yet hindered by compound formation and low Curie temperature. Here, Nie et al. report electric-field control of ferromagnetism in Mn_xGe_1−x nanomeshes with a Curie temperature above 400 K and controllable giant magnetoresistance.

Revealing giant internal magnetic fields due to spin fluctuations in magnetically doped colloidal nanocrystals

Strong quantum confinement in semiconductors can compress the wavefunctions of band electrons and holes to nanometre-scale volumes, significantly enhancing interactions between themselves and individual dopants. In magnetically doped semiconductors, where paramagnetic dopants (such as Mn(2+), Co(2+) and so on) couple to band carriers via strong sp-d spin exchange, giant magneto-optical effects can therefore be realized in confined geometries using few or even single impurity spins. Importantly, however, thermodynamic spin fluctuations become increasingly relevant in this few-spin limit. In nanoscale volumes, the statistical fluctuations of N spins are expected to generate giant effective magnetic fields Beff, which should dramatically impact carrier spin dynamics, even in the absence of any applied field. Here we directly and unambiguously reveal the large Beff that exist in Mn(2+)-doped CdSe colloidal nanocrystals using ultrafast optical spectroscopy. At zero applied magnetic field, extremely rapid (300-600 GHz) spin precession of photoinjected electrons is observed, indicating Beff ∼ 15 -30 T for electrons. Precession frequencies exceed 2 THz in applied magnetic fields. These signals arise from electron precession about the random fields due to statistically incomplete cancellation of the embedded Mn(2+) moments, thereby revealing the initial coherent dynamics of magnetic polaron formation, and highlighting the importance of magnetization fluctuations on carrier spin dynamics in nanomaterials.

Magnetic Properties of Nonmagnetic Nanostructures: Dangling Bond Magnetic Polaron in CdSe Nanocrystals

We predict theoretically that nonmagnetic CdSe nanocrystals may possess macroscopic magnetic moments due to the formation of dangling-bond magnetic polarons (DBMPs). A DBMP is created in optically pumped nanocrystals by dynamic polarization of dangling bond spins (DBSs) at the nanocrystal surface during radiative recombination of the ground state "dark" exciton assisted by a spin-flip of the DBS. The formation of DBMPs suppresses the radiative recombination of the dark exciton and leads to a temperature-dependent contribution to the Stokes shift of the photoluminescence. This model consistently explains the experimentally observed low-temperature photoluminescence features of nonmagnetic CdSe nanocrystals as manifestations of their spin-related magnetic properties.

Exposure of the hidden anti-ferromagnetism in paramagnetic CdSe:Mn nanocrystals

We present theoretical and experimental investigations of the magnetism of paramagnetic semiconductor CdSe:Mn nanocrystals and propose an efficient approach to the exposure and analysis of the underlying anti-ferromagnetic interactions between magnetic ions therein. A key advance made here is the development of an analysis method with the exploitation of group theory technique that allows us to distinguish the anti-ferromagnetic interactions between aggregative Mn(2+) ions from the overall pronounced paramagnetism of magnetic-ion-doped semiconductor nanocrystals. By using the method, we clearly reveal and identify the signatures of anti-ferromagnetism from the measured temperature-dependent magnetisms and furthermore determine the average number of Mn(2+) ions and the fraction of aggregative ones in the measured CdSe:Mn nanocrystals.

Addition of Mn to Ge quantum dot surfaces--interaction with the Ge QD {105} facet and the Ge(001) wetting layer

The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T < 160 °C leaves the Mn-clusters on the WL unchanged, while the Mn-islands on the Ge{105} facet undergo first a ripening process, followed by a volume gain which can be attributed to the onset of intermixing with Ge. This development is supported by the statistical analysis of island volume, size and size distribution. Increasing the annealing temperature to 220° and finally 375 ° C leads to a rapid increase in the Mn-surface diffusion, as evidenced by the formation of larger, nanometer size clusters, which are identified as germanide Mn5Ge3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn-Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn-Ge system.

Spin textures in strongly coupled electron spin and magnetic or nuclear spin systems in quantum dots

Controlling electron spins strongly coupled to magnetic and nuclear spins in solid state systems is an important challenge in the field of spintronics and quantum computation. We show here that electron droplets with no net spin in semiconductor quantum dots strongly coupled with magnetic ion or nuclear spin systems break down at low temperature and form a nontrivial antiferromagnetic spatially ordered spin texture of magnetopolarons. The spatially ordered combined electron-magnetic ion spin texture, associated with spontaneous symmetry breaking in the parity of electronic charge and spin densities and magnetization of magnetic ions, emerges from an ab initio density functional approach to the electronic system coupled with mean-field approximation for the magnetic or nuclear spin system. The predicted phase diagram determines the critical temperature as a function of coupling strength and identifies possible phases of the strongly coupled spin system. The prediction may arrest fluctuations in the spin system and open the way to control, manipulate, and prepare magnetic and nuclear spin ensembles in semiconductor nanostructures.

Spin-polarized Mn2+ emission from Mn-doped colloidal nanocrystals

We report magnetophotoluminescence studies of strongly quantum-confined 0D diluted magnetic semiconductors (DMS), realized in Mn(2+)-doped ZnSe/CdSe core-shell colloidal nanocrystals. In marked contrast to their 3D (bulk), 2D (quantum well), 1D (quantum wire), and 0D (self-assembled quantum dot) DMS counterparts, the ubiquitous yellow emission band from internal d-d ((4)T(1)→(6)A(1)) transitions of the Mn(2+) ions in these nanocrystals is not suppressed in applied magnetic fields and does become circularly polarized. This polarization tracks the Mn(2+) magnetization, and is accompanied by a sizable energy splitting between right- and left-circular emission components that scales with the exciton-Mn sp-d coupling strength (which, in turn, is tunable with nanocrystal size). These data highlight the influence of strong quantum confinement on both the excitation and the emission mechanisms of magnetic ions in DMS nanomaterials.

Magnetism in closed-shell quantum dots: emergence of magnetic bipolarons

Similar to atoms and nuclei, semiconductor quantum dots exhibit the formation of shells. Predictions of magnetic behavior of the dots are often based on the shell occupancies. Thus, closed-shell quantum dots are assumed to be inherently nonmagnetic. Here, we propose a possibility of magnetism in such dots doped with magnetic impurities. On the example of the system of two interacting fermions, the simplest embodiment of the closed-shell structure, we demonstrate the emergence of a novel broken-symmetry ground state that is neither spin singlet nor spin triplet. We propose experimental tests of our predictions and the magnetic-dot structures to perform them.

Piezomagnetic quantum dots

We study the influence of deformations on magnetic ordering in quantum dots doped with magnetic impurities. The reduction of symmetry and the associated deformation from circular to elliptical quantum confinement lead to the formation of piezomagnetic quantum dots. The strength of elliptical deformation can be controlled by the gate voltage to change the magnitude of magnetization, at a fixed number of carriers and in the absence of an applied magnetic field. We reveal a reentrant magnetic ordering with the increase of elliptical deformation and suggest that the piezomagnetic quantum dots can be used as nanoscale magnetic switches.

Semiconductor spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry—giant magnetoresistance systems are used as hard disk read heads—semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.