Nonadiabatic exciton-phonon coupling in Raman spectroscopy of layered materials

Phonon-Mediated Exciton Relaxation in Two-Dimensional Semiconductors: Selection Rules and Relaxation Pathways

Exciton-phonon coupling (ExPC) is crucial for energy relaxation in semiconductors, yet the first-principles calculation of such coupling remains challenging, especially for two-dimensional (2D) systems. Here, an accurate method for calculating ExPC is developed and applied in exciton relaxation problems in monolayer WSe2. Considering the interplay between the exciton wave functions and electron-phonon coupling (EPC) matrix elements, we find that ExPC shows selection rules distinct from the ones of EPC. By employing the Wannier exciton model, we generalize these selection rules, which state that the angular quantum numbers of the exciton must match the winding numbers of the EPC matrix elements for the ExPC to be allowed. To verify our theory and method, we calculate intervalley exciton relaxation pathways, which agree well with a recent experiment.

Nonadiabatic Coupling-Induced Quantum Coherence in Two-Dimensional Materials

Two-dimensional materials provide a rich platform demonstrating quantum effects, and the process of electron-hole recombination occurring in them has significant applications in the fields of the photocatalytic and optoelectronic community. Here, we present nonadiabatic coupling-induced quantum coherence and quantum beats in Al-doped blue phosphorene. The work improves our understanding and utilization of nonadiabatic coupling in low-dimensional materials from a new perspective. In addition, our investigations provide meaningful guidance for manipulating quantum coherence in low-dimensional materials and promoting their novel optoelectronic properties.

Tuning metal atom doped interface of electrospinning nanowires to toward fast bioelectrocatalysis

Metal doping plays a key role in overcoming inefficient extracellular electron transfer between electrode interface and electricity-producing microorganisms. However, it is unknown whether different metals play distinctive roles in the doping process. Herein, three different metal ions (Fe, Ni and Cu) are added to the spinning precursor to obtain the corresponding electrospinning metal doped carbon nanofibers. It is found that the maximum output power of iron doped carbon nanofiber anode is 641.96 mW m-2, which is better than that of nickel doped carbon nanofiber (411.26 mW m-2) and copper doped carbon nanofiber (336.01 mW m-2), as well as 7.62 times higher than that of CNF. The results proved that due to the various number and types of active sites formed, as well as the distinction in surface morphology and structure, the electronegativity of each material is different. The different bio-abiotic interface could affect the direct contact between the anode interface and the extracellular protein of electricity producing microorganisms, which leading to a significant gap in the improvement of bioelectrocatalytic performance of different metal anode materials. This work provides a synthetic idea for designing highly efficient anode materials with directional metal modification and interface regulation.

Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr

The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling among its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (∼14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provide insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.

Exciton Lifetime and Optical Line Width Profile via Exciton-Phonon Interactions: Theory and First-Principles Calculations for Monolayer MoS2

Exciton dynamics dictates the evolution of photoexcited carriers in photovoltaic and optoelectronic devices. However, interpreting their experimental signatures is a challenging theoretical problem due to the presence of both electron-phonon and many-electron interactions. We develop and apply here a first-principles approach to exciton dynamics resulting from exciton-phonon coupling in monolayer MoS₂ and reveal the highly selective nature of exciton-phonon coupling due to the internal spin structure of excitons, which leads to a surprisingly long lifetime of the lowest-energy bright A exciton. Moreover, we show that optical absorption processes rigorously require a second-order perturbation theory approach, with photon and phonon treated on an equal footing, as proposed by Toyozawa and Hopfield. Such a treatment, thus far neglected in first-principles studies, gives rise to off-diagonal exciton-phonon self-energy, which is critical for the description of dephasing mechanisms and yields exciton line widths in excellent agreement with experiment.

Intrinsic Control of Interlayer Exciton Generation in Van der Waals Materials via Janus Layers

We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. We investigate different MoS₂@Janus layer combinations using first-principles methods including excitons and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between dark interlayer exciton states and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS₂@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient generation of charge-separated electron-hole pairs.

Admirable stability achieved by ns2 ions Co-doping for all-inorganic metal halides towards optical anti-counterfeiting

Optical materials play a momentous role in anti-counterfeiting field, such as authentication, currency and security. The development of tunable optical properties and optical responses to a range of external stimuli is quite imperative for the growing demand of optical anti-counterfeiting technology. Metal halide perovskites have attracted much attention of researchers due to their excellent optical properties. In addition, co-doping methods have been gradually applied to the research of metal halide perovskites, by which more abundant luminescence phenomena can be introduced into the host perovskite. Herein, the ns² ions of bismuth (Bi³⁺) and antimony (Sb³⁺) ions co-doped zero-dimensional Cs₂SnCl₆ metal halide with an excitation-wavelength-dependent emission phenomenon is synthesized as an efficient multimodal luminescent material, the luminescence of which is tunable and covers a wide region of color. What's more, a dynamic dual-emission phenomenon is captured when the excitation wavelength changes from 320 nm to 420 nm for Cs₂SnCl₆:Bi_0.08Sb_0.12 crystals. Moreover, the Bi³⁺ and Sb³⁺ doped metal halide material shows great enhancement in solvent resistance and thermal stability compared to the pristine Cs₂SnCl₆. The admirable stability and distinguishable photoluminescence (PL) phenomenon of this all-inorganic metal halide has great potential to be applied in optical anti-counterfeiting technology. Furthermore, the co-doping method can accelerate the discovery of new luminescence phenomena in original metal halide perovskites.

Control of Raman Scattering Quantum Interference Pathways in Graphene

Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning doping or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of intermediate electronic excitations and, therefore, on quantum interference, which has so far remained elusive. Here, we control the Raman scattering pathways by tuning the laser excitation energy in graphene doped up to 1.05 eV. The Raman excitation profile of the G mode indicates its position and full width at half-maximum are linearly dependent on doping. Doping-enhanced electron-electron interactions dominate the lifetimes of Raman scattering pathways and reduce Raman interference. This will provide guidance for engineering quantum pathways for doped graphene, nanotubes, and topological insulators.

Observation of resonant exciton and correlated plasmon yielding correlated plexciton in amorphous silicon with various hydrogen content

Hydrogenated amorphous silicon (a-Si: H) has received great attention for rich fundamental physics and potentially inexpensive solar cells. Here, we observe new resonant excitons and correlated plasmons tunable via hydrogen content in a-Si: H films on Indium Tin Oxide (ITO) substrate. Spectroscopic ellipsometry supported with High Resolution-Transmission Electron Microscopy (HR-TEM) is used to probe optical properties and the density of electronic states in the various crystallinity from nano-size crystals to amorphous a-Si: H films. The observed optical and electronic structures are analyzed by the second derivative with analytic critical-point line shapes. The complex dielectric function shows good agreement with microscopic calculations for the energy shift and the broadening inter-band transitions based on the electron-hole interaction. Interestingly, we observe an unusual spectral weight transfer over a broad energy range revealing electronic correlations that cause a drastic change in the charge carrier density and determine the photovoltaic performance. Furthermore, the interplay of resonant excitons and correlated plasmons is discussed in term of a correlated plexciton. Our result shows the important role of hydrogen in determining the coupling of excitons and plasmons in a-Si: H film for photovoltaic devices.

Vibronic Exciton-Phonon States in Stack-Engineered van der Waals Heterojunction Photodiodes

Stack engineering, an atomic-scale metamaterial strategy, enables the design of optical and electronic properties in van der Waals heterostructure devices. Here we reveal the optoelectronic effects of stacking-induced strong coupling between atomic motion and interlayer excitons in WSe₂/MoSe₂ heterojunction photodiodes. To do so, we introduce the photocurrent spectroscopy of a stack-engineered photodiode as a sensitive technique for probing interlayer excitons, enabling access to vibronic states typically found only in molecule-like systems. The vibronic states in our stack are manifest as a palisade of pronounced periodic sidebands in the photocurrent spectrum in frequency windows close to the interlayer exciton resonances and can be shifted "on demand" through the application of a perpendicular electric field via a source-drain bias voltage. The observation of multiple well-resolved sidebands as well as their ability to be shifted by applied voltages vividly demonstrates the emergence of interlayer exciton vibronic structure in a stack-engineered optoelectronic device.

Sub-10 fs Intervalley Exciton Coupling in Monolayer MoS2 Revealed by Helicity-Resolved Two-Dimensional Electronic Spectroscopy

The valley pseudospin at the K and K' high-symmetry points in monolayer transition metal dichalcogenides (TMDs) has potential as an optically addressable degree of freedom in next-generation optoelectronics. However, intervalley scattering and relaxation of charge carriers leads to valley depolarization and limits practical applications. In addition, enhanced Coulomb interactions lead to pronounced excitonic effects that dominate the optical response and initial valley depolarization dynamics but complicate the interpretation of ultrafast spectroscopic experiments at short time delays. Employing broadband helicity-resolved two-dimensional electronic spectroscopy (2DES), we observe ultrafast (∼10 fs) intervalley coupling between all A and B valley exciton states that results in a complete breakdown of the valley index in large-area monolayer MoS₂ films. These couplings and subsequent dynamics exhibit minimal excitation fluence or temperature dependence and are robust toward changes in sample grain size and inherent strain. Our observations strongly suggest that this direct intervalley coupling on the time scale of optical excitation is an inherent property of large-area MoS₂ distinct from dynamic carrier or exciton scattering, phonon-driven processes, and multiexciton effects. This ultrafast intervalley coupling poses a fundamental challenge for exciton-based valleytronics in monolayer TMDs and must be overcome to fully realize large-area valleytronic devices.

Exciton-Phonon Interactions in Monolayer Germanium Selenide from First Principles

We investigate from first principles exciton-phonon interactions in monolayer germanium selenide, a direct gap two-dimensional semiconductor. By combining the Bethe-Salpeter approach and the special displacement method, we explore the phonon-induced renormalization of the exciton wave functions, excitation energies, and oscillator strengths. We determine a renormalization of the optical gap of 0.1 eV at room temperature, which results from the coupling of the exciton with both acoustic and optical phonons, with the strongest coupling to optical phonons at ∼100 cm^-1. We also find that the exciton-phonon interaction is similar between monolayer and bulk GeSe. Overall, we demonstrate that the combination of many-body perturbation theory and special displacements offers a new route to investigate electron-phonon couplings in excitonic spectra, the resulting band gap renormalization, and the nature of phonons that couple to the exciton.