1
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Bulanadi R, Cordero-Edwards K, Tückmantel P, Saremi S, Morpurgo G, Zhang Q, Martin LW, Nagarajan V, Paruch P. Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films. PHYSICAL REVIEW LETTERS 2024; 133:106801. [PMID: 39303254 DOI: 10.1103/physrevlett.133.106801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 06/07/2024] [Indexed: 09/22/2024]
Abstract
Defects have a significant influence on the polarization and electromechanical properties of ferroelectric materials. Statistically, they can be seen as random pinning centers acting on an elastic manifold, slowing domain-wall propagation and raising the energy required to switch polarization. Here we show that the "dressing" of defects can lead to unprecedented control of domain-wall dynamics. We engineer defects of two different dimensionalities in ferroelectric oxide thin films-point defects externally induced via He^{2+} bombardment, and extended quasi-one-dimensional a domains formed in response to internal strains. The a domains act as extended strong pinning sites (as expected) imposing highly localized directional constraints. Surprisingly, the induced point defects in the He^{2+} bombarded samples orient and align to impose further directional pinning, screening the effect of a domains. This defect interplay produces more uniform and predictable domain-wall dynamics. Such engineered interactions between defects are crucial for advancements in ferroelectric devices.
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Affiliation(s)
| | | | | | | | | | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Departments of Materials Science and NanoEngineering, Chemistry, and Physics and Astronomy, Rice University, Houston, Texas 77005, USA
- Rice Advanced Materials Institute, Rice University, Houston, Texas 77005, USA
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2
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Zhu R, Zheng S, Li X, Wang T, Tan C, Yu T, Liu Z, Wang X, Li J, Wang J, Gao P. Atomic-Scale Tracking Topological Phase Transition Dynamics of Polar Vortex-Antivortex Pairs. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312072. [PMID: 38734889 DOI: 10.1002/adma.202312072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Revised: 04/02/2024] [Indexed: 05/13/2024]
Abstract
Non-trivial topological structures, such as vortex-antivortex (V-AV) pairs, have garnered significant attention in the field of condensed matter physics. However, the detailed topological phase transition dynamics of V-AV pairs, encompassing behaviors like self-annihilation, motion, and dissociation, have remained elusive in real space. Here, polar V-AV pairs are employed as a model system, and their transition pathways are tracked with atomic-scale resolution, facilitated by in situ (scanning) transmission electron microscopy and phase field simulations. This investigation reveals that polar vortices and antivortices can stably coexist as bound pairs at room temperature, and their polarization decreases with heating. No dissociation behavior is observed between the V-AV phase at room temperature and the paraelectric phase at high temperature. However, the application of electric fields can promote the approach of vortex and antivortex cores, ultimately leading to their annihilation near the interface. Revealing the transition process mediated by polar V-AV pairs at the atomic scale, particularly the role of polar antivortex, provides new insights into understanding the topological phases of matter and their topological phase transitions. Moreover, the detailed exploration of the dynamics of polar V-AV pairs under thermal and electrical fields lays a solid foundation for their potential applications in electronic devices.
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Affiliation(s)
- Ruixue Zhu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Sizheng Zheng
- Department of Engineering Mechanics, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Xiaomei Li
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- School of Integrated Circuits, East China Normal University, Shanghai, 200241, China
| | - Tao Wang
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Congbing Tan
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan, Hunan, 411201, China
| | - Tiancheng Yu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Zhetong Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Xinqiang Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Jiangyu Li
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Jie Wang
- Department of Engineering Mechanics, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Zhejiang Laboratory, Hangzhou, 311100, China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
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3
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Wang J, Liu Z, Wang Q, Nie F, Chen Y, Tian G, Fang H, He B, Guo J, Zheng L, Li C, Lü W, Yan S. Ultralow Strain-Induced Emergent Polarization Structures in a Flexible Freestanding BaTiO 3 Membrane. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401657. [PMID: 38647365 PMCID: PMC11220712 DOI: 10.1002/advs.202401657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Indexed: 04/25/2024]
Abstract
The engineering of ferroic orders, which involves the evolution of atomic structure and local ferroic configuration in the development of next-generation electronic devices. Until now, diverse polarization structures and topological domains are obtained in ferroelectric thin films or heterostructures, and the polarization switching and subsequent domain nucleation are found to be more conducive to building energy-efficient and multifunctional polarization structures. In this work, a continuous and periodic strain in a flexible freestanding BaTiO3 membrane to achieve a zigzag morphology is introduced. The polar head/tail boundaries and vortex/anti-vortex domains are constructed by a compressive strain as low as ≈0.5%, which is extremely lower than that used in epitaxial rigid ferroelectrics. Overall, this study c efficient polarization structures, which is of both theoretical value and practical significance for the development of next-generation flexible multifunctional devices.
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Affiliation(s)
- Jie Wang
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
- Functional Materials and Acousto‐Optic Instruments InstituteSchool of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Zhen Liu
- School of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing210094China
| | - Qixiang Wang
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
| | - Fang Nie
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Yanan Chen
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
| | - Gang Tian
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Hong Fang
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
- Functional Materials and Acousto‐Optic Instruments InstituteSchool of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Bin He
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
| | - Jinrui Guo
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
| | - Limei Zheng
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Changjian Li
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and DevicesSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Weiming Lü
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
- Functional Materials and Acousto‐Optic Instruments InstituteSchool of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China
| | - Shishen Yan
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
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4
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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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5
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Olaniyan II, Schmitt SW, Albert J, Garcia Fernandez J, Marcelot C, Cours R, Deshpande V, Cherkashin N, Schamm-Chardon S, Kim DJ, Dubourdieu C. Shaping single crystalline BaTiO 3nanostructures by focused neon or helium ion milling. NANOTECHNOLOGY 2024; 35:335301. [PMID: 38701774 DOI: 10.1088/1361-6528/ad4713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Accepted: 05/03/2024] [Indexed: 05/05/2024]
Abstract
The realization of perovskite oxide nanostructures with controlled shape and dimensions remains a challenge. Here, we investigate the use of helium and neon focused ion beam (FIB) milling in an ion microscope to fabricate BaTiO3nanopillars of sub-500 nm in diameter starting from BaTiO3(001) single crystals. Irradiation of BaTiO3with He ions induces the formation of nanobubbles inside the material, eventually leading to surface swelling and blistering. Ne-FIB is shown to be suitable for milling without inducing surface swelling. The resulting structures are defect-free single crystal nanopillars, which are enveloped, on the top and lateral sidewalls, by a point defect-rich crystalline region and an outer Ne-rich amorphous layer. The amorphous layer can be selectively etched by dipping in diluted HF. The geometry and beam-induced damage of the milled nanopillars depend strongly on the patterning parameters and can be well controlled. Ne ion milling is shown to be an effective method to rapidly prototype BaTiO3crystalline nanostructures.
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Affiliation(s)
- I I Olaniyan
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, D-14109 Berlin, Germany
- Freie Universität Berlin, Physical and Theoretical Chemistry, Arnimallee 22, D-14195 Berlin, Germany
| | - S W Schmitt
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, D-14109 Berlin, Germany
| | - J Albert
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, D-14109 Berlin, Germany
| | - J Garcia Fernandez
- CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, F-31055 Toulouse, France
| | - C Marcelot
- CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, F-31055 Toulouse, France
| | - R Cours
- CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, F-31055 Toulouse, France
| | - V Deshpande
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, D-14109 Berlin, Germany
| | - N Cherkashin
- CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, F-31055 Toulouse, France
| | - S Schamm-Chardon
- CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, F-31055 Toulouse, France
| | - D J Kim
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, D-14109 Berlin, Germany
| | - C Dubourdieu
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, D-14109 Berlin, Germany
- Freie Universität Berlin, Physical and Theoretical Chemistry, Arnimallee 22, D-14195 Berlin, Germany
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6
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Li W, Liao L, Deng C, Lebudi C, Liu J, Wang S, Yi D, Wang L, Li JF, Li Q. Artificial Domain Patterning in Ultrathin Ferroelectric Films via Modifying the Surface Electrostatic Boundary Conditions. NANO LETTERS 2024. [PMID: 38619536 DOI: 10.1021/acs.nanolett.4c00479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Nanoscale spatially controlled modulation of the properties of ferroelectrics via artificial domain pattering is crucial to their emerging optoelectronics applications. New patterning strategies to achieve high precision and efficiency and to link the resultant domain structures with device functionalities are being sought. Here, we present an epitaxial heterostructure of SrRuO3/PbTiO3/SrRuO3, wherein the domain configuration is delicately determined by the charge screening conditions in the SrRuO3 layer and the substrate strains. Chemical etching of the top SrRuO3 layer leads to a transition from in-plane a domains to out-of-plane c domains, accompanied by a giant (>105) modification in the second harmonic generation response. The modulation effect, coupled with the plasmonic resonance effect from SrRuO3, enables a highly flexible design of nonlinear optical devices, as demonstrated by a simulated split-ring resonator metasurface. This domain patterning strategy may be extended to more thin-film ferroelectric systems with domain stabilities amenable to electrostatic boundary conditions.
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Affiliation(s)
- Wei Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lei Liao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chenguang Deng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Collieus Lebudi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jingchun Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Sixu Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lifen Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Qian Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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7
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Sánchez-Santolino G, Rouco V, Puebla S, Aramberri H, Zamora V, Cabero M, Cuellar FA, Munuera C, Mompean F, Garcia-Hernandez M, Castellanos-Gomez A, Íñiguez J, Leon C, Santamaria J. A 2D ferroelectric vortex pattern in twisted BaTiO 3 freestanding layers. Nature 2024; 626:529-534. [PMID: 38356067 PMCID: PMC10866709 DOI: 10.1038/s41586-023-06978-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 12/14/2023] [Indexed: 02/16/2024]
Abstract
The wealth of complex polar topologies1-10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric-dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11-14 domains that evolve into vortex-like structures at the nanoscale15-17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.
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Affiliation(s)
- G Sánchez-Santolino
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
| | - V Rouco
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
| | - S Puebla
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - H Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
| | - V Zamora
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - M Cabero
- ICTS Centro Nacional de Microscopia Electrónica 'Luis Brú', Universidad Complutense, Madrid, Spain
| | - F A Cuellar
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - C Munuera
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - F Mompean
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - M Garcia-Hernandez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - A Castellanos-Gomez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - C Leon
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
| | - J Santamaria
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
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8
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Goodge BH. Layered ferroelectric materials make waves - and vortices. Nature 2024; 626:488-489. [PMID: 38356063 DOI: 10.1038/d41586-024-00231-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
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9
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Domingo N. Bowing to ferroelectric artificial flux closure. NATURE MATERIALS 2023:10.1038/s41563-023-01714-x. [PMID: 38017042 DOI: 10.1038/s41563-023-01714-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Affiliation(s)
- Neus Domingo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
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10
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Lu Y, Su L, Fang L, Luo Q, Gong M, Cao D, Chen X, Shi X, Shu H. Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In 2Se 3 ferroelectrics. NANOSCALE 2023; 15:18306-18316. [PMID: 37920997 DOI: 10.1039/d3nr03166g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Two-dimensional (2D) ferroelectric semiconductors, such as α-In2Se3 with switchable spontaneous polarization and superior optoelectronic properties, exhibit large potential for functional device applications. The electric transport properties and device performance of 2D α-In2Se3 are strongly sensitive to the ferroelectric domain structures and polarization textures, but they are rarely explored at the atomic scale. Herein, by a combination of first-principles calculations and a developed domain switching theory, we report the domain nucleation kinetics and polarization-texture dependent electronic properties in α-In2Se3 ferroelectrics. Our calculated results reveal that the reversed domains characterized by armchair boundaries tend to form triangular or stripped shape. The energy barrier for propagating domain boundaries is ∼1.42 eV and can be reduced by loading external electric field, which is responsible for driving the evolution of domain structures. Moreover, the domain switching leads to notable changes in the band gap and carrier spatial distribution of α-In2Se3 monolayer, resulting in higher electric resistance of multi-polarization domain structures than that of single-polarization state. The domain structures of multilayer α-In2Se3 follow a layer-by-layer switching mechanism, which causes the transition of electronic structures from self-doped p-n junctions to type-II semiconductor homojunctions. This study not only provides an in-depth insight into the domain switching mechanisms of α-In2Se3 but also opens up the possibility to tailor their electronic and transport properties.
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Affiliation(s)
- Yanan Lu
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Liqin Su
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Linghui Fang
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Qingyuan Luo
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Meiying Gong
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Dan Cao
- College of Science, China Jiliang University, 310018 Hangzhou, China
| | - Xiaoshuang Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China
| | - Xiaowen Shi
- Hongzhiwei Technology (Shanghai) Co., Ltd, Shanghai 201206, People's Republic of China
| | - Haibo Shu
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
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11
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Govinden V, Tong P, Guo X, Zhang Q, Mantri S, Seyfouri MM, Prokhorenko S, Nahas Y, Wu Y, Bellaiche L, Sun T, Tian H, Hong Z, Valanoor N, Sando D. Ferroelectric solitons crafted in epitaxial bismuth ferrite superlattices. Nat Commun 2023; 14:4178. [PMID: 37443322 DOI: 10.1038/s41467-023-39841-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Accepted: 06/29/2023] [Indexed: 07/15/2023] Open
Abstract
In ferroelectrics, complex interactions among various degrees of freedom enable the condensation of topologically protected polarization textures. Known as ferroelectric solitons, these particle-like structures represent a new class of materials with promise for beyond-CMOS technologies due to their ultrafine size and sensitivity to external stimuli. Such polarization textures have scarcely been demonstrated in multiferroics. Here, we present evidence for ferroelectric solitons in (BiFeO3)/(SrTiO3) superlattices. High-resolution piezoresponse force microscopy and Cs-corrected high-angle annular dark-field scanning transmission electron microscopy reveal a zoo of topologies, and polarization displacement mapping of planar specimens reveals center-convergent/divergent topological defects as small as 3 nm. Phase-field simulations verify that some of these structures can be classed as bimerons with a topological charge of ±1, and first-principles-based effective Hamiltonian computations show that the coexistence of such structures can lead to non-integer topological charges, a first observation in a BiFeO3-based system. Our results open new opportunities in multiferroic topotronics.
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Affiliation(s)
- Vivasha Govinden
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia
| | - Peiran Tong
- Center of Electron Microscopy, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China
| | - Xiangwei Guo
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China
| | - Qi Zhang
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia
| | - Sukriti Mantri
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Mohammad Moein Seyfouri
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia
- Solid State and Elemental Analysis Unit, Mark Wainwright Analytical Center, University of New South Wales, Sydney, NSW, Australia
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Yongjun Wu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Tulai Sun
- Center of Electron Microscopy, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang, China
| | - He Tian
- Center of Electron Microscopy, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China.
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan, China.
| | - Zijian Hong
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China.
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China.
| | - Nagarajan Valanoor
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia.
| | - Daniel Sando
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia.
- School of Physical and Chemical Sciences, University of Canterbury, Christchurch, New Zealand.
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12
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Gong FH, Tang YL, Wang YJ, Chen YT, Wu B, Yang LX, Zhu YL, Ma XL. Absence of critical thickness for polar skyrmions with breaking the Kittel's law. Nat Commun 2023; 14:3376. [PMID: 37291226 PMCID: PMC10250330 DOI: 10.1038/s41467-023-39169-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 05/31/2023] [Indexed: 06/10/2023] Open
Abstract
The period of polar domain (d) in ferroics was commonly believed to scale with corresponding film thicknesses (h), following the classical Kittel's law of d ∝ [Formula: see text]. Here, we have not only observed that this relationship fails in the case of polar skyrmions, where the period shrinks nearly to a constant value, or even experiences a slight increase, but also discovered that skyrmions have further persisted in [(PbTiO3)2/(SrTiO3)2]10 ultrathin superlattices. Both experimental and theoretical results indicate that the skyrmion periods (d) and PbTiO3 layer thicknesses in superlattice (h) obey the hyperbolic function of d = Ah + [Formula: see text] other than previous believed, simple square root law. Phase-field analysis indicates that the relationship originates from the different energy competitions of the superlattices with PbTiO3 layer thicknesses. This work exemplified the critical size problems faced by nanoscale ferroelectric device designing in the post-Moore era.
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Affiliation(s)
- Feng-Hui Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Ting Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Li-Xin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
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13
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Noheda B, Nukala P, Acuautla M. Lessons from hafnium dioxide-based ferroelectrics. NATURE MATERIALS 2023; 22:562-569. [PMID: 37138006 DOI: 10.1038/s41563-023-01507-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2022] [Accepted: 02/13/2023] [Indexed: 05/05/2023]
Abstract
A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-based ultrathin layers, this family of materials continues to elicit interest. There is ample consensus that the observed switching does not obey the same mechanisms present in most other ferroelectrics, but its exact nature is still under debate. Next to this fundamental relevance, a large research effort is dedicated to optimizing the use of this extraordinary material, which already shows direct integrability in current semiconductor chips and potential for scalability to the smallest node architectures, in smaller and more reliable devices. Here we present a perspective on how, despite our incomplete understanding and remaining device endurance issues, the lessons learned from hafnium dioxide-based ferroelectrics offer interesting avenues beyond ferroelectric random-access memories and field-effect transistors. We hope that research along these other directions will stimulate discoveries that, in turn, will mitigate some of the current issues. Extending the scope of available systems will eventually enable the way to low-power electronics, self-powered devices and energy-efficient information processing.
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Affiliation(s)
- Beatriz Noheda
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands.
- CogniGron Center, University of Groningen, Groningen, The Netherlands.
| | - Pavan Nukala
- Center for Nanoscience and Engineering, Indian Institute of Science, Bengaluru, India
| | - Mónica Acuautla
- Engineering and Technology Institute Groningen (ENTEG), University of Groningen, Groningen, The Netherlands
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14
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Kim HS, An JS, Bae HB, Chung SY. Atomic-scale observation of premelting at 2D lattice defects inside oxide crystals. Nat Commun 2023; 14:2255. [PMID: 37081020 PMCID: PMC10119109 DOI: 10.1038/s41467-023-37977-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Accepted: 04/05/2023] [Indexed: 04/22/2023] Open
Abstract
Since two major criteria for melting were proposed by Lindemann and Born in the early 1900s, many simulations and observations have been carried out to elucidate the premelting phenomena largely at the crystal surfaces and grain boundaries below the bulk melting point. Although dislocations and clusters of vacancies and interstitials were predicted as possible origins to trigger the melting, experimental direct observations demonstrating the correlation of premelting with lattice defects inside a crystal remain elusive. Using atomic-column-resolved imaging with scanning transmission electron microscopy in polycrystalline BaCeO3, here we clarify the initiation of melting at two-dimensional faults inside the crystals below the melting temperature. In particular, melting in a layer-by-layer manner rather than random nucleation at the early stage was identified as a notable finding. Emphasizing the value of direct atomistic observation, our study suggests that lattice defects inside crystals should not be overlooked as preferential nucleation sites for phase transformation including melting.
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Affiliation(s)
- Hye-Sung Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Korea
- Korea Institute of Energy Research, Daejeon, 34129, Korea
| | - Ji-Sang An
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Korea
| | - Hyung Bin Bae
- KAIST Analysis Center, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Korea
| | - Sung-Yoon Chung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Korea.
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15
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Caretta L, Shao YT, Yu J, Mei AB, Grosso BF, Dai C, Behera P, Lee D, McCarter M, Parsonnet E, K P H, Xue F, Guo X, Barnard ES, Ganschow S, Hong Z, Raja A, Martin LW, Chen LQ, Fiebig M, Lai K, Spaldin NA, Muller DA, Schlom DG, Ramesh R. Non-volatile electric-field control of inversion symmetry. NATURE MATERIALS 2023; 22:207-215. [PMID: 36536139 DOI: 10.1038/s41563-022-01412-0] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2021] [Accepted: 10/18/2022] [Indexed: 06/17/2023]
Abstract
Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground states have different crystal symmetries. A key challenge is to stabilize and control the coexistence of symmetry-distinct phases. Using BiFeO3 layers confined between layers of dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BiFeO3 phases at room temperature with antipolar, insulating and polar semiconducting behaviour, respectively. Application of orthogonal in-plane electric (polar) fields results in reversible non-volatile interconversion between the two phases, hence removing and introducing centrosymmetry. Counterintuitively, we find that an electric field 'erases' polarization, resulting from the anisotropy in octahedral tilts introduced by the interweaving TbScO3 layers. Consequently, this interconversion between centrosymmetric and non-centrosymmetric phases generates changes in the non-linear optical response of over three orders of magnitude, resistivity of over five orders of magnitude and control of microscopic polar order. Our work establishes a platform for cross-functional devices that take advantage of changes in optical, electrical and ferroic responses, and demonstrates octahedral tilts as an important order parameter in materials interface design.
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Affiliation(s)
- Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- School of Engineering, Brown University, Providence, RI, USA.
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, USA
| | - Jia Yu
- Department of Physics, University of Texas, Austin, TX, USA
| | - Antonio B Mei
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | | | - Cheng Dai
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Piush Behera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Daehun Lee
- Department of Physics, University of Texas, Austin, TX, USA
| | | | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, USA
| | - Harikrishnan K P
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Fei Xue
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Xiangwei Guo
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
- Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China
| | - Edward S Barnard
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | | | - Zijian Hong
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Archana Raja
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Manfred Fiebig
- Department of Materials, ETH Zurich, Zurich, Switzerland
| | - Keji Lai
- Department of Physics, University of Texas, Austin, TX, USA
| | | | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
- Leibniz-Institut für Kristallzüchtung, Berlin, Germany
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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16
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Li Q, Sun J, Zhang Y, Li T, Liu H, Cao Y, Zhang Q, Gu L, Honda T, Ikeda K, Otomo T, Lin K, Deng J, Xing X. Ferroelectric Ordering in Nanosized PbTiO 3. NANO LETTERS 2022; 22:9405-9410. [PMID: 36410727 DOI: 10.1021/acs.nanolett.2c03303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The insight into the three-dimensional configuration of ferroelectric ordering in ferroelectric nanomaterials is motivated by the application of the development of functional nanodevices and the structural designing. However, the atomic deciphering of the spatial distribution of ordered structure remains challenging for the limitation of dimension and probing techniques. In this paper, a neutron pair distribution function (nPDF) was utilized to analyze the spontaneous polarization distribution of zero-dimensional PbTiO3 nanoparticles in three dimensions, via the application of reverse Monte Carlo (RMC) modeling. The comprehensive identification with transmission electron microscopy verified the linear characteristics of polarization along the c-axis in the main body, while electric polarization distribution on the surface was enhanced abnormally. In addition, the correlation of dipole vectors extending to three unit cells below the surface is retained. This work shows an application of the micro/macroscale information to effectively decode the polarization structure of nanoferroelectrics, providing new views of designing nanoferroelectric devices.
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Affiliation(s)
- Qiang Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Jing Sun
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Yuanpeng Zhang
- Neutron Science Division, Oak Ridge National Laboratory (ORNL), Oak Ridge, Tennessee 37831, United States
| | - Tianyu Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Yili Cao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Science, Beijing 100190, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Takashi Honda
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan
| | - Kazutaka Ikeda
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan
| | - Toshiya Otomo
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan
| | - Kun Lin
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Jinxia Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Xianran Xing
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China
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17
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Hu D, Fan Z, Sawyer W, Henderson M, Luo D, Liu X, Gu H, Tan X, Wen J. Hierarchical domain structures associated with oxygen octahedra tilting patterns in lead-free (Bi 1/2Na 1/2)TiO 3. NANOTECHNOLOGY 2022; 34:075702. [PMID: 36332230 DOI: 10.1088/1361-6528/aca030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2022] [Accepted: 11/03/2022] [Indexed: 06/16/2023]
Abstract
Hierarchical domain structures associated with oxygen octahedra tilting patterns were observed in lead-free (Bi1/2Na1/2)TiO3ceramics using aberration-corrected high-resolution transmission electron microscopy (HRTEM). Three types of domains are induced by distinct mechanisms: the 'orientation-domain' is induced at micrometer scale formed by different tilting orientations of the oxygen octahedra, the 'meso-chemical-domain' occurs at a few tens of nanometer scale by chemical composition variation on the A-site in the ABO3perovskite structure, and the 'nano-cluster-region' runs across several unit-cells with apparent A-site cation segregation with oxygen vacancies clustering around Na cations. Based on HRTEM amplitude contrast imaging (ACI), the correlation between the oxygen octahedral tilting pattern and compositional non-stoichiometry was established. The role of the hierarchical domain structure associated with the tilting patterns of the oxygen octahedra on the ferroelectric behavior of (Bi1/2Na1/2)TiO3is also discussed.
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Affiliation(s)
- Dongli Hu
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60437, United States of America
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People's Republic of China
| | - Zhongming Fan
- Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011, United States of America
| | - William Sawyer
- Physics Department, West Chester University of Pennsylvania, West Chester, PA 19383, United States of America
| | - Mitchell Henderson
- Physics Department, West Chester University of Pennsylvania, West Chester, PA 19383, United States of America
| | - Duan Luo
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60437, United States of America
- Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, People's Republic of China
| | - Xiaoming Liu
- Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011, United States of America
| | - Hui Gu
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People's Republic of China
| | - Xiaoli Tan
- Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011, United States of America
| | - Jianguo Wen
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60437, United States of America
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18
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Li M, Yang T, Chen P, Wang Y, Zhu R, Li X, Shi R, Liu HJ, Huang YL, Ma X, Zhang J, Bai X, Chen LQ, Chu YH, Gao P. Electric-field control of the nucleation and motion of isolated three-fold polar vertices. Nat Commun 2022; 13:6340. [PMID: 36284138 PMCID: PMC9596422 DOI: 10.1038/s41467-022-33973-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Accepted: 10/10/2022] [Indexed: 11/21/2022] Open
Abstract
Recently various topological polar structures have been discovered in oxide thin films. Despite the increasing evidence of their switchability under electrical and/or mechanical fields, the dynamic property of isolated ones, which is usually required for applications such as data storage, is still absent. Here, we show the controlled nucleation and motion of isolated three-fold vertices under an applied electric field. At the PbTiO3/SrRuO3 interface, a two-unit-cell thick SrTiO3 layer provides electrical boundary conditions for the formation of three-fold vertices. Utilizing the SrTiO3 layer and in situ electrical testing system, we find that isolated three-fold vertices can move in a controllable and reversible manner with a velocity up to ~629 nm s-1. Microstructural evolution of the nucleation and propagation of isolated three-fold vertices is further revealed by phase-field simulations. This work demonstrates the ability to electrically manipulate isolated three-fold vertices, shedding light on the dynamic property of isolated topological polar structures.
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Affiliation(s)
- Mingqiang Li
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON, M5S 3E4, Canada
| | - Tiannan Yang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Pan Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Yongjun Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
| | - Ruixue Zhu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Xiaomei Li
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Ruochen Shi
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Heng-Jui Liu
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan, ROC
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
| | - Xiumei Ma
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Jingmin Zhang
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
- Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan, ROC
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
- Collaborative Innovation Centre of Quantum Matter, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
- Hefei National Laboratory, 230088, Hefei, China.
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19
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Valleti SMP, Ignatans R, Kalinin SV, Tileli V. Decoding the Mechanisms of Phase Transitions from In Situ Microscopy Observations. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104318. [PMID: 36063435 DOI: 10.1002/smll.202104318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2021] [Revised: 07/27/2022] [Indexed: 06/15/2023]
Abstract
Analysis of the temperature- and stimulus-dependent imaging data toward elucidation of the physical transformations is an ubiquitous problem in multiple fields. Here, temperature-induced phase transition in BaTiO3 is explored using the machine learning analysis of domain morphologies visualized via variable-temperature scanning transmission electron microscopy (STEM) imaging data. This approach is based on the multivariate statistical analysis of the time or temperature dependence of the statistical descriptors of the system, derived in turn from the categorical classification of observed domain structures or projection on the continuous parameter space of the feature extraction-dimensionality reduction transform. The proposed workflow offers a powerful tool for the exploration of the dynamic data based on the statistics of image representation as a function of the external control variable to visualize the transformation pathways during phase transitions and chemical reactions. This can include the mesoscopic STEM data as demonstrated here, but also optical, chemical imaging, etc., data. It can further be extended to the higher dimensional spaces, for example, analysis of the combinatorial libraries of materials compositions.
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Affiliation(s)
- Sai Mani Prudhvi Valleti
- Bredesen Center for Interdisciplinary Research, University of Tennessee, Knoxville, TN, 37996, USA
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Reinis Ignatans
- Institute of Materials, École polytechnique fédérale de Lausanne, Station 12, Lausanne, 1015, Switzerland
| | - Sergei V Kalinin
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37916, USA
| | - Vasiliki Tileli
- Institute of Materials, École polytechnique fédérale de Lausanne, Station 12, Lausanne, 1015, Switzerland
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20
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Zhu R, Jiang Z, Zhang X, Zhong X, Tan C, Liu M, Sun Y, Li X, Qi R, Qu K, Liu Z, Wu M, Li M, Huang B, Xu Z, Wang J, Liu K, Gao P, Wang J, Li J, Bai X. Dynamics of Polar Skyrmion Bubbles under Electric Fields. PHYSICAL REVIEW LETTERS 2022; 129:107601. [PMID: 36112449 DOI: 10.1103/physrevlett.129.107601] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 06/23/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
Room-temperature polar skyrmions, which have been recently discovered in oxide superlattice, have received considerable attention for their potential applications in nanoelectronics owing to their nanometer size, emergent chirality, and negative capacitance. For practical applications, their manipulation using external stimuli is a prerequisite. Herein, we study the dynamics of individual polar skyrmions at the nanoscale via in situ scanning transmission electron microscopy. By monitoring the electric-field-driven creation, annihilation, shrinkage, and expansion of topological structures in real space, we demonstrate the reversible transformation among skyrmion bubbles, elongated skyrmions, and monodomains. The underlying mechanism and interactions are discussed in conjunction with phase-field simulations. The electrical manipulation of nanoscale polar skyrmions allows the tuning of their dielectric permittivity at the atomic scale, and the detailed knowledge of their phase transition behaviors provides fundamentals for their applications in nanoelectronics.
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Affiliation(s)
- Ruixue Zhu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhexin Jiang
- Department of Engineering Mechanics, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Xinxin Zhang
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xiangli Zhong
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Congbing Tan
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, Hunan, China
| | - Mingwei Liu
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, Hunan, China
| | - Yuanwei Sun
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xiaomei Li
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ruishi Qi
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Ke Qu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhetong Liu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Mei Wu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Mingqiang Li
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Boyuan Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
| | - Zhi Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jinbin Wang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Kaihui Liu
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Jie Wang
- Department of Engineering Mechanics, Zhejiang University, Hangzhou 310027, Zhejiang, China
- Zhejiang Laboratory, Hangzhou 311100, Zhejiang, China
| | - Jiangyu Li
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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21
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Song Z, Wang Y, Zheng H, Narang P, Wang LW. Deep Quantum-Dot Arrays in Moiré Superlattices of Non-van der Waals Materials. J Am Chem Soc 2022; 144:14657-14667. [PMID: 35921553 DOI: 10.1021/jacs.2c04390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Recently, moiré superlattices of twisted van der Waals (vdW) materials have attracted substantial interest due to their strongly correlated properties. However, the vdW interlayer interaction is intrinsically weak, such that many desired properties can only exist at low temperature. Here, we theoretically predict some unusual properties stemming from the chemical bonding between twisted PbS nanosheets as an example of non-vdW moiré superlattices. The strong interlayer coupling in such systems results in giant strain vortices and dipole vortices at the interface. The modified electronic structures become a series of dispersionless bands and artificial-atom states. In real space, these states are analogous to arrays of well-positioned quantum dots, which may be promising for use in single-electron devices. In theory, if the materials are doped with a low concentration of electrons, a Wigner crystal will form even without any magnetic field. To confirm the accessibility and stability of non-vdW moiré superlattices in experiment, we synthesized PbS moiré superlattices with different twist angles. Our transmission-electron-microscope observations reveal the resemblance of the small-angle-twisted structures with the square matrices of quantum dots, which is in good accordance with our calculations.
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Affiliation(s)
- Zhigang Song
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Yu Wang
- South China Advanced Institute for Soft Matter Science and Technology, School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Haimei Zheng
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.,Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Lin-Wang Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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22
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Nonvolatile ferroelectric domain wall memory integrated on silicon. Nat Commun 2022; 13:4332. [PMID: 35882838 PMCID: PMC9325887 DOI: 10.1038/s41467-022-31763-w] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 07/01/2022] [Indexed: 11/30/2022] Open
Abstract
Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BaTiO3 films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories. Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.
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23
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Fernandez A, Acharya M, Lee HG, Schimpf J, Jiang Y, Lou D, Tian Z, Martin LW. Thin-Film Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108841. [PMID: 35353395 DOI: 10.1002/adma.202108841] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
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Affiliation(s)
- Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Han-Gyeol Lee
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jesse Schimpf
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Djamila Lou
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zishen Tian
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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24
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Gao J, Lv Q, Li F, Guo J. Domain Structures and Temperature Induced Phase Transitions in Perovskite Molecular 3‐Ammonioquinuclidinium‐NH
4
Cl
3. ChemistrySelect 2022. [DOI: 10.1002/slct.202200428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Jinghan Gao
- Department of Applied Chemistry Tianjin Key Laboratory of Food Biotechnology School of Biotechnology and Food Science Tianjin University of Commerce Tianjin 300134 China
| | - Qianrui Lv
- School of Science Beijing Jiaotong University Beijing 100044 China
| | - Feihui Li
- Department of Applied Chemistry Tianjin Key Laboratory of Food Biotechnology School of Biotechnology and Food Science Tianjin University of Commerce Tianjin 300134 China
| | - Junjie Guo
- Department of Applied Chemistry Tianjin Key Laboratory of Food Biotechnology School of Biotechnology and Food Science Tianjin University of Commerce Tianjin 300134 China
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25
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O'Connell EN, Moore K, McFall E, Hennessy M, Moynihan E, Bangert U, Conroy M. TopoTEM: A Python Package for Quantifying and Visualizing Scanning Transmission Electron Microscopy Data of Polar Topologies. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2022; 28:1-9. [PMID: 35318910 DOI: 10.1017/s1431927622000435] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The exotic internal structure of polar topologies in multiferroic materials offers a rich landscape for materials science research. As the spatial scale of these entities is often subatomic in nature, aberration-corrected transmission electron microscopy (TEM) is the ideal characterization technique. Software to quantify and visualize the slight shifts in atomic placement within unit cells is of paramount importance due to the now routine acquisition of images at such resolution. In the previous ~decade since the commercialization of aberration-corrected TEM, many research groups have written their own code to visualize these polar entities. More recently, open-access Python packages have been developed for the purpose of TEM atomic position quantification. Building on these packages, we introduce the TEMUL Toolkit: a Python package for analysis and visualization of atomic resolution images. Here, we focus specifically on the TopoTEM module of the toolkit where we show an easy to follow, streamlined version of calculating the atomic displacements relative to the surrounding lattice and thus plotting polarization. We hope this toolkit will benefit the rapidly expanding field of topology-based nano-electronic and quantum materials research, and we invite the electron microscopy community to contribute to this open-access project.
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Affiliation(s)
- Eoghan N O'Connell
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Kalani Moore
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Elora McFall
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Michael Hennessy
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Eoin Moynihan
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Ursel Bangert
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Michele Conroy
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
- Department of Materials, Faculty of Engineering, London Centre of Nanotechnology, Imperial College London, London, UK
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26
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Creange N, Dyck O, Vasudevan RK, Ziatdinov M, Kalinin SV. Towards automating structural discovery in scanning transmission electron microscopy
*. MACHINE LEARNING: SCIENCE AND TECHNOLOGY 2022. [DOI: 10.1088/2632-2153/ac3844] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022] Open
Abstract
Abstract
Scanning transmission electron microscopy is now the primary tool for exploring functional materials on the atomic level. Often, features of interest are highly localized in specific regions in the material, such as ferroelectric domain walls, extended defects, or second phase inclusions. Selecting regions to image for structural and chemical discovery via atomically resolved imaging has traditionally proceeded via human operators making semi-informed judgements on sampling locations and parameters. Recent efforts at automation for structural and physical discovery have pointed towards the use of ‘active learning’ methods that utilize Bayesian optimization with surrogate models to quickly find relevant regions of interest. Yet despite the potential importance of this direction, there is a general lack of certainty in selecting relevant control algorithms and how to balance a priori knowledge of the material system with knowledge derived during experimentation. Here we address this gap by developing the automated experiment workflows with several combinations to both illustrate the effects of these choices and demonstrate the tradeoffs associated with each in terms of accuracy, robustness, and susceptibility to hyperparameters for structural discovery. We discuss possible methods to build descriptors using the raw image data and deep learning based semantic segmentation, as well as the implementation of variational autoencoder based representation. Furthermore, each workflow is applied to a range of feature sizes including NiO pillars within a La:SrMnO3 matrix, ferroelectric domains in BiFeO3, and topological defects in graphene. The code developed in this manuscript is open sourced and will be released at github.com/nccreang/AE_Workflows.
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27
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Zhang Y, Qu W, Peng G, Zhang C, Liu Z, Liu J, Li S, Wu H, Meng L, Gao L. Seeing Structural Mechanisms of Optimized Piezoelectric and Thermoelectric Bulk Materials through Structural Defect Engineering. MATERIALS 2022; 15:ma15020487. [PMID: 35057205 PMCID: PMC8780573 DOI: 10.3390/ma15020487] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2021] [Revised: 12/28/2021] [Accepted: 01/05/2022] [Indexed: 02/04/2023]
Abstract
Aberration-corrected scanning transmission electron microscopy (AC-STEM) has evolved into the most powerful characterization and manufacturing platform for all materials, especially functional materials with complex structural characteristics that respond dynamically to external fields. It has become possible to directly observe and tune all kinds of defects, including those at the crucial atomic scale. In-depth understanding and technically tailoring structural defects will be of great significance for revealing the structure-performance relation of existing high-property materials, as well as for foreseeing paths to the design of high-performance materials. Insights would be gained from piezoelectrics and thermoelectrics, two representative functional materials. A general strategy is highlighted for optimizing these functional materials’ properties, namely defect engineering at the atomic scale.
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Affiliation(s)
- Yang Zhang
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
- Correspondence:
| | - Wanbo Qu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Guyang Peng
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Chenglong Zhang
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Ziyu Liu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Juncheng Liu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Shurong Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Haijun Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Lingjie Meng
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
| | - Lumei Gao
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
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28
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Peng H, Qi JC, Song XJ, Xiong RG, Liao WQ. An unprecedented azobenzene-based organic single-component ferroelectric. Chem Sci 2022; 13:4936-4943. [PMID: 35655879 PMCID: PMC9067575 DOI: 10.1039/d2sc00689h] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2022] [Accepted: 04/04/2022] [Indexed: 12/31/2022] Open
Abstract
The first azobenzene-based organic single-component ferroelectric 2-amino-2′,4,4′,6,6′-pentafluoroazobenzene was designed, which shows an exceptionally high Curie temperature (Tc) of 443 K.
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Affiliation(s)
- Hang Peng
- Ordered Matter Science Research Center, Nanchang University, 330031, P. R. China
| | - Jun-Chao Qi
- Ordered Matter Science Research Center, Nanchang University, 330031, P. R. China
| | - Xian-Jiang Song
- Ordered Matter Science Research Center, Nanchang University, 330031, P. R. China
| | - Ren-Gen Xiong
- Ordered Matter Science Research Center, Nanchang University, 330031, P. R. China
| | - Wei-Qiang Liao
- Ordered Matter Science Research Center, Nanchang University, 330031, P. R. China
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29
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Zhang Y, Yu R, Zhu J. Displacement separation analysis from atomic-resolution images. Ultramicroscopy 2021; 232:113404. [PMID: 34656896 DOI: 10.1016/j.ultramic.2021.113404] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 09/26/2021] [Accepted: 10/03/2021] [Indexed: 11/16/2022]
Abstract
Structural distortions frequently occur in materials, either periodically (ferroelectric or antiferroelectric) or in local areas (domain boundaries, surfaces/interfaces, dislocations). Measuring atomic displacements from an average lattice is of crucial importance for analyzing structural distortions and their connections to physical properties. Conventionally, the displacements are measured atom-by-atom by fitting atomic-resolution images with two-dimensional gaussian functions. Here, we exhibit an efficient method, named Displacement Separation Analysis, DSA in short, to directly separate atomic displacements from an average lattice based on Fourier space filtering. Using antiferroelectric AgNbO3 as a model system, we demonstrate the consistence between DSA and gaussian fitting. The suppression of polarization at interfacial region of h-LuFeO3/α-Al2O3 heterostructure and the emergence of modulation structure in LuFe2O4+x is then revealed using DSA, attesting the implication of DSA in unveiling structural distortions either locally or periodically. Inspired by the simple principle of DSA, such method can be used for any atomic-resolution images, including TEM, STM, and AFM images to exhibit the atomic displacement intuitively.
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Affiliation(s)
- Yang Zhang
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China; Ji Hua Laboratory, Foshan, 528299, P.R. China; State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P.R. China
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
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30
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Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO 3 Capacitor. MEMBRANES 2021; 11:membranes11100758. [PMID: 34677524 PMCID: PMC8538922 DOI: 10.3390/membranes11100758] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Revised: 09/23/2021] [Accepted: 09/29/2021] [Indexed: 11/16/2022]
Abstract
By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.
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31
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Tan C, Dong Y, Sun Y, Liu C, Chen P, Zhong X, Zhu R, Liu M, Zhang J, Wang J, Liu K, Bai X, Yu D, Ouyang X, Wang J, Gao P, Luo Z, Li J. Engineering polar vortex from topologically trivial domain architecture. Nat Commun 2021; 12:4620. [PMID: 34330915 PMCID: PMC8324780 DOI: 10.1038/s41467-021-24922-y] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2021] [Accepted: 07/15/2021] [Indexed: 11/08/2022] Open
Abstract
Topologically nontrivial polar structures are not only attractive for high-density data storage, but also for ultralow power microelectronics thanks to their exotic negative capacitance. The vast majority of polar structures emerging naturally in ferroelectrics, however, are topologically trivial, and there are enormous interests in artificially engineered polar structures possessing nontrivial topology. Here we demonstrate reconstruction of topologically trivial strip-like domain architecture into arrays of polar vortex in (PbTiO3)10/(SrTiO3)10 superlattice, accomplished by fabricating a cross-sectional lamella from the superlattice film. Using a combination of techniques for polarization mapping, atomic imaging, and three-dimensional structure visualization supported by phase field simulations, we reveal that the reconstruction relieves biaxial epitaxial strain in thin film into a uniaxial one in lamella, changing the subtle electrostatic and elastostatic energetics and providing the driving force for the polar vortex formation. The work establishes a realistic strategy for engineering polar topologies in otherwise ordinary ferroelectric superlattices.
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Affiliation(s)
- Congbing Tan
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan, Hunan, China
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China
| | - Yongqi Dong
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, China
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
| | - Yuanwei Sun
- International Center for Quantum Materials, Peking University, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China
| | - Chang Liu
- Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, Zhejiang, China
- Applied Mechanics and Structure Safety Key Laboratory of Sichuan Province, School of Mechanics and Engineering, Southwest Jiaotong University, Chengdu, Sichuan, China
| | - Pan Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Xiangli Zhong
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, China
| | - Ruixue Zhu
- International Center for Quantum Materials, Peking University, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China
| | - Mingwei Liu
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan, Hunan, China
| | - Jingmin Zhang
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China
| | - Jinbin Wang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, China
| | - Kaihui Liu
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Dapeng Yu
- Collaborative Innovation Centre of Quantum Matter, Beijing, China
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, Guangdong, China
| | - Xiaoping Ouyang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, China
| | - Jie Wang
- Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, Zhejiang, China.
- Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou, Zhejiang, China.
| | - Peng Gao
- International Center for Quantum Materials, Peking University, Beijing, China.
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China.
- Collaborative Innovation Centre of Quantum Matter, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China.
| | - Jiangyu Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China.
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, China.
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, China.
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32
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Zhang HY, Chen XG, Tang YY, Liao WQ, Di FF, Mu X, Peng H, Xiong RG. PFM (piezoresponse force microscopy)-aided design for molecular ferroelectrics. Chem Soc Rev 2021; 50:8248-8278. [PMID: 34081064 DOI: 10.1039/c9cs00504h] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With prosperity, decay, and another spring, molecular ferroelectrics have passed a hundred years since Valasek first discovered ferroelectricity in the molecular compound Rochelle salt. Recently, the proposal of ferroelectrochemistry has injected new vigor into this century-old research field. It should be highlighted that piezoresponse force microscopy (PFM) technique, as a non-destructive imaging and manipulation method for ferroelectric domains at the nanoscale, can significantly speed up the design rate of molecular ferroelectrics as well as enhance the ferroelectric and piezoelectric performances relying on domain engineering. Herein, we provide a brief review of the contribution of the PFM technique toward assisting the design and performance optimization of molecular ferroelectrics. Relying on the relationship between ferroelectric domains and crystallography, together with other physical characteristics such as domain switching and piezoelectricity, we believe that the PFM technique can be effectively applied to assist the design of high-performance molecular ferroelectrics equipped with multifunctionality, and thereby facilitate their practical utilization in optics, electronics, magnetics, thermotics, and mechanics among others.
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Affiliation(s)
- Han-Yue Zhang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, P. R. China.
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Hong Z, Das S, Nelson C, Yadav A, Wu Y, Junquera J, Chen LQ, Martin LW, Ramesh R. Vortex Domain Walls in Ferroelectrics. NANO LETTERS 2021; 21:3533-3539. [PMID: 33872021 DOI: 10.1021/acs.nanolett.1c00404] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Controlling the domain formation in ferroelectric materials at the nanoscale is a fertile ground to explore emergent phenomena and their technological prospects. For example, charged ferroelectric domain walls in BiFeO3 and ErMnO3 exhibit significantly enhanced conductivity which could serve as the foundation for next-generation circuits (Estévez and Laurson, Phys. Rev. B 2015, 91, 054407). Here, we describe a concept in which polar vortices perform the same role as a ferroelectric domain wall in classical domain structures with the key difference being that the polar vortices can accommodate charged (i.e., head-to-head and tail-to-tail) domains, for example, in ferroelectric PbTiO3/dielectric SrTiO3 superlattices. Such a vortex domain wall structure can be manipulated in a reversible fashion under an external applied field.
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Affiliation(s)
- Zijian Hong
- Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Christopher Nelson
- Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831-6071, United States
| | - Ajay Yadav
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Yongjun Wu
- Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Javier Junquera
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Avenidad de los Castros s/n, E-39005 Santander, Spain
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Physics, University of California, Berkeley, California 94720, United States
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34
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Zhao HJ, Chen P, Prosandeev S, Artyukhin S, Bellaiche L. Dzyaloshinskii-Moriya-like interaction in ferroelectrics and antiferroelectrics. NATURE MATERIALS 2021; 20:341-345. [PMID: 33046858 DOI: 10.1038/s41563-020-00821-3] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2020] [Accepted: 09/03/2020] [Indexed: 06/11/2023]
Abstract
The Dzyaloshinskii-Moriya interaction (DMI) between two magnetic moments mi and mj is of the form [Formula: see text]. It originates from spin-orbit coupling, and is at the heart of fascinating phenomena involving non-collinear magnetism, such as magnetic topological defects (for example, skyrmions) as well as spin-orbit torques and magnetically driven ferroelectricity, that are of significant fundamental and technological interest. In sharp contrast, its electric counterpart, which is an electric DMI characterized by its [Formula: see text] strength and describing an interaction between two polar displacements ui and uj, has rarely been considered, despite the striking possibility that it could also generate new features associated with non-collinear patterns of electric dipoles. Here we report first-principles simulations combined with group theoretical symmetry analysis which not only demonstrate that electric DMI does exist and has a one-to-one correspondence with its magnetic analogue, but also reveals a physical source for it. These findings can be used to explain and/or design phenomena of possible technological importance in ferroelectrics and multiferroics.
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Affiliation(s)
- Hong Jian Zhao
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Peng Chen
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA.
| | - Sergey Prosandeev
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Sergey Artyukhin
- Quantum Materials Theory, Italian Institute of Technology, Genoa, Italy
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA.
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35
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Yang W, Tian G, Zhang Y, Xue F, Zheng D, Zhang L, Wang Y, Chen C, Fan Z, Hou Z, Chen D, Gao J, Zeng M, Qin M, Chen LQ, Gao X, Liu JM. Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects. Nat Commun 2021; 12:1306. [PMID: 33637763 PMCID: PMC7910570 DOI: 10.1038/s41467-021-21521-9] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 01/26/2021] [Indexed: 11/09/2022] Open
Abstract
Ferroelectric topological objects provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels associated with the topological cores of quadrant vortex domain and center domain (monopole-like) states confined in high quality BiFeO3 nanoislands, abbreviated as the vortex core and the center core. We unveil via the phase-field simulation that the superfine metallic conduction channels along the center cores arise from the screening charge carriers confined at the core region, whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be reversibly created and deleted by manipulating the two topological states via electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices, e.g. nonvolatile memory.
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Grants
- 11674108, 11834002, 51272078, 51721001, 52002134 National Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund (NSFC-Yunnan Joint Fund)
- The National Key Research and Development Programs of China (Nos. 2016YFA0201002, 2016YFA0300101), the Science and Technology Program of Guangzhou (No. 2019050001), the Natural Science Foundation of Guangdong Province (Nos. 2016A030308019, 2019A1515110707), and the Science and Technology Planning Project of Guangdong Province (Nos. 2015B090927006, 2019KQNCX028); China Scholarship Council (No. 201706190099);US National Science Foundation under grant number DMR-1744213.
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Affiliation(s)
- Wenda Yang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Guo Tian
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Yang Zhang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
- Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fei Xue
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Dongfeng Zheng
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Luyong Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Yadong Wang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Chao Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Jinwei Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Min Zeng
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Minghui Qin
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
| | - Jun-Ming Liu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
- Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
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36
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Chen S, Yuan S, Hou Z, Tang Y, Zhang J, Wang T, Li K, Zhao W, Liu X, Chen L, Martin LW, Chen Z. Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000857. [PMID: 32815214 DOI: 10.1002/adma.202000857] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Revised: 04/17/2020] [Indexed: 06/11/2023]
Abstract
Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.
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Affiliation(s)
- Shanquan Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Shuai Yuan
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Jinping Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Tao Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Kang Li
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Weiwei Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xingjun Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
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37
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Tang YY, Xie Y, Ai Y, Liao WQ, Li PF, Nakamura T, Xiong RG. Organic Ferroelectric Vortex-Antivortex Domain Structure. J Am Chem Soc 2020; 142:21932-21937. [PMID: 33326208 DOI: 10.1021/jacs.0c11416] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
Abstract
Organic ferroelectrics are attracting tremendous interest because of their mechanical flexibility, ease of fabrication, and low acoustical impedance. Although great advances have been made in recent years, topological defects such as vortices remain relatively unexplored in the organic ferroelectric system. Here, from [quinuclidinium]ReO4 ([Q]ReO4), we applied the molecular design strategy of H/F substitution to successfully synthesize the organic ferroelectric [4-fluoroquinuclidinium]ReO4 ([4-F-Q]ReO4). Through H/F substitution, the Curie temperature and spontaneous polarization are respectively increased from 367 K and 5.83 μC/cm2 in [Q]ReO4 to 466 K and 11.37 μC/cm2 in [4-F-Q]ReO4. Moreover, under mechanical stress fields, three kinds of stripelike domains with various polarization directions emerge to form a windmill-like domain pattern in the thin film of [4-F-Q]ReO4, in which intriguing vortex-antivortex topological configurations can exist stably. This work provides an efficient strategy for optimizing the properties of organic ferroelectrics and exploring emergent phenomena.
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Affiliation(s)
- Yuan-Yuan Tang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Yongfa Xie
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Yong Ai
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Wei-Qiang Liao
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Peng-Fei Li
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Takayoshi Nakamura
- Research Institute for Electronic Science, Hokkaido University, Kitaku, Sapporo, Hokkaido 001-0020, Japan
| | - Ren-Gen Xiong
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
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38
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Exploring physics of ferroelectric domain walls via Bayesian analysis of atomically resolved STEM data. Nat Commun 2020; 11:6361. [PMID: 33311492 PMCID: PMC7733522 DOI: 10.1038/s41467-020-19907-2] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2020] [Accepted: 10/28/2020] [Indexed: 11/30/2022] Open
Abstract
The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in the material, including the functional form of Ginzburg-Landau-Devonshire expansion, and numerical value of the corresponding parameters. The preexisting materials knowledge naturally folds in the Bayesian framework in the form of prior distributions, with the different order parameters forming competing (or hierarchical) models. Here, we explore the physics of the ferroelectric domain walls in BiFeO3 using this method, and derive the posterior estimates of relevant parameters. More generally, this inference approach both allows learning materials physics from experimental data with associated uncertainty quantification, and establishing guidelines for instrumental development answering questions on what resolution and information limits are necessary for reliable observation of specific physical mechanisms of interest. Ferroelectric domain wall profiles can be modeled by phenomenological Ginzburg-Landau theory, with different candidate models and parameters. Here, the authors solve the problem of model selection by developing a Bayesian inference framework allowing for uncertainty quantification and apply it to atomically resolved images of walls. This analysis can also predict the level of microscope performance needed to detect specific physical phenomena.
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39
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Khalyavin DD, Johnson RD, Orlandi F, Radaelli PG, Manuel P, Belik AA. Emergent helical texture of electric
dipoles. Science 2020; 369:680-684. [DOI: 10.1126/science.aay7356] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2019] [Accepted: 06/12/2020] [Indexed: 11/02/2022]
Abstract
Long-range ordering of magnetic dipoles in
bulk materials gives rise to a broad range of
magnetic structures, from simple collinear
ferromagnets and antiferromagnets, to complex
magnetic helicoidal textures stabilized by
competing exchange interactions. In contrast,
dipolar order in dielectric crystals is typically
limited to parallel (ferroelectric) and
antiparallel (antiferroelectric) collinear
alignments of electric dipoles. Here, we report an
observation of incommensurate helical ordering of
electric dipoles by light hole doping of the
quadruple perovskite
BiMn7O12.
In analogy with magnetism, the electric dipole
helicoidal texture is stabilized by competing
instabilities. Specifically, orbital ordering and
lone electron pair stereochemical activity
compete, giving rise to phase transitions from a
nonchiral cubic structure to an incommensurate
electric dipole and orbital helix via an
intermediate density wave.
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Affiliation(s)
- Dmitry D. Khalyavin
- ISIS Facility, Rutherford Appleton Laboratory, Harwell Campus, Didcot OX11 0QX, UK
| | - Roger D. Johnson
- Department of Physics and Astronomy, University College London, London WC1E 6BT, UK
- Department of Physics, University of Oxford, Oxford OX1 3PU, UK
| | - Fabio Orlandi
- ISIS Facility, Rutherford Appleton Laboratory, Harwell Campus, Didcot OX11 0QX, UK
| | | | - Pascal Manuel
- ISIS Facility, Rutherford Appleton Laboratory, Harwell Campus, Didcot OX11 0QX, UK
| | - Alexei A. Belik
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
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40
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Wang YJ, Feng YP, Zhu YL, Tang YL, Yang LX, Zou MJ, Geng WR, Han MJ, Guo XW, Wu B, Ma XL. Polar meron lattice in strained oxide ferroelectrics. NATURE MATERIALS 2020; 19:881-886. [PMID: 32483242 DOI: 10.1038/s41563-020-0694-8] [Citation(s) in RCA: 62] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2019] [Accepted: 04/24/2020] [Indexed: 06/11/2023]
Abstract
A topological meron features a non-coplanar structure, whose order parameters in the core region are perpendicular to those near the perimeter. A meron is half of a skyrmion, and both have potential applications for information carrying and storage. Although merons and skyrmions in ferromagnetic materials can be readily obtained via inter-spin interactions, their behaviour and even existence in ferroelectric materials are still elusive. Here we observe using electron microscopy not only the atomic morphology of merons with a topological charge of 1/2, but also a periodic meron lattice in ultrathin PbTiO3 films under tensile epitaxial strain on a SmScO3 substrate. Phase-field simulations rationalize the formation of merons for which an epitaxial strain, as a single alterable parameter, plays a critical role in the coupling of lattice and charge. This study suggests that by engineering strain at the nanoscale it should be possible to fabricate topological polar textures, which in turn could facilitate the development of nanoscale ferroelectric devices.
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Affiliation(s)
- Y J Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Y P Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Y L Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
| | - Y L Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - L X Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - M J Zou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
| | - W R Geng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
| | - M J Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - X W Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
| | - B Wu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - X L Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- State Key Laboratory of Advanced Processing and Recycling on Non-Ferrous Metals, Lanzhou University of Technology, Lanzhou, China.
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41
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Atomic-scale observations of electrical and mechanical manipulation of topological polar flux closure. Proc Natl Acad Sci U S A 2020; 117:18954-18961. [PMID: 32709747 PMCID: PMC7430988 DOI: 10.1073/pnas.2007248117] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Flux-closures, stable topological polar structures of nanometer size, are considered to be promising candidates as elements of future nanoelectronic and electromechanical devices. Understanding their phase transition pathways under external stimuli is therefore of vital importance for these potential applications. Here, using an atomically resolved in situ electron microscopy technique, we track the evolutions of the polarization of the flux-closure structure under both electric and stress fields with atomic resolution. We find that the flux-closure can be reversibly and controllably manipulated between the topological and ordinary ferroelectric states, enabling potential applications in electromechanical and nanoelectronic devices. The ability to controllably manipulate complex topological polar configurations such as polar flux-closures via external stimuli may allow the construction of new electromechanical and nanoelectronic devices. Here, using atomically resolved in situ scanning transmission electron microscopy, we find that the polar flux-closures in PbTiO3/SrTiO3 superlattice films are mobile and can be reversibly switched to ordinary single ferroelectric c or a domains under an applied electric field or stress. Specifically, the electric field initially drives movement of a flux-closure via domain wall motion and then breaks it to form intermediate a/c striped domains, whereas mechanical stress first squeezes the core of a flux-closure toward the interface and then form a/c domains with disappearance of the core. After removal of the external stimulus, the flux-closure structure spontaneously recovers. These observations can be precisely reproduced by phase field simulations, which also reveal the evolutions of the competing energies during phase transitions. Such reversible switching between flux-closures and ordinary ferroelectric states provides a foundation for potential electromechanical and nanoelectronic applications.
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42
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Ai Y, Zeng YL, He WH, Huang XQ, Tang YY. Six-Fold Vertices in a Single-Component Organic Ferroelectric with Most Equivalent Polarization Directions. J Am Chem Soc 2020; 142:13989-13995. [DOI: 10.1021/jacs.0c06936] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Affiliation(s)
- Yong Ai
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People’s Republic of China
| | - Yu-Ling Zeng
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People’s Republic of China
| | - Wen-Hui He
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People’s Republic of China
| | - Xue-Qin Huang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People’s Republic of China
| | - Yuan-Yuan Tang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People’s Republic of China
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43
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Atomic imaging of mechanically induced topological transition of ferroelectric vortices. Nat Commun 2020; 11:1840. [PMID: 32296053 PMCID: PMC7160157 DOI: 10.1038/s41467-020-15616-y] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2019] [Accepted: 03/16/2020] [Indexed: 11/22/2022] Open
Abstract
Ferroelectric vortices formed through complex lattice–charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO3/SrTiO3 superlattice via atomically resolved in-situ scanning transmission electron microscopy. The vortices undergo a transition to the a-domain with in-plane polarization under external compressive stress and spontaneously recover after removal of the stress. We reveal the detailed transition process at the atomic scale and reproduce this numerically using phase-field simulations. These findings provide new pathways to control the exotic topological ferroelectric structures for future nanoelectronics and also valuable insights into understanding of lattice-charge interactions at nanoscale. Controlling topological polar vortices promises to open up new applications for ferroelectric materials. Here, the authors proposed a method to mechanically manipulate polar vortices and monitored the transition between vortex and ferroelectric phase by in-situ scanning transmission electron microscopy.
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Lunkenbein T, Masliuk L, Plodinec M, Algara-Siller G, Jung S, Jastak M, Kube P, Trunschke A, Schlögl R. Site specific and localized structural displacements in open structured multimetallic oxides. NANOSCALE 2020; 12:6759-6766. [PMID: 32167100 DOI: 10.1039/c9nr09041j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The structures of solids can locally differ from the macroscopic picture obtained by structural averaging techniques. This difference significantly influences the performance of any functional material. Measurements of these local structures are challenging. Thus, the description of defects is often disregarded. However, in order to understand the functionality, such irregularities have to be investigated. Here, we present a high resolution scanning transmission electron microscopic (STEM) study revealing local structural irregularities in open structured oxides using catalytically active orthorhombic (Mo,V,Te,Nb)Ox as a complex example. Detailed analysis of annular dark field- and annular bright field-STEM images reveal site specific local structural displacements of individual framework and channel sites in the picometer range. These experimental observables can be considered as an important structural addendum for theoretical modelling and should be implemented into the existing data in order to quantify site specific potential energies and stresses. This information can further be used to describe the impact of the structure on the catalytic performance in greater detail.
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Affiliation(s)
- Thomas Lunkenbein
- Department of Inorganic Chemistry, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany.
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Li D, Huang X, Xiao Z, Chen H, Zhang L, Hao Y, Song J, Shao DF, Tsymbal EY, Lu Y, Hong X. Polar coupling enabled nonlinear optical filtering at MoS 2/ferroelectric heterointerfaces. Nat Commun 2020; 11:1422. [PMID: 32184400 PMCID: PMC7078226 DOI: 10.1038/s41467-020-15191-2] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2019] [Accepted: 02/14/2020] [Indexed: 11/09/2022] Open
Abstract
Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is yet to be charted. Here, we report an unconventional nonlinear optical filtering effect resulting from the interfacial polar alignment between monolayer MoS2 and a neighboring ferroelectric oxide thin film. The second harmonic generation response at the heterointerface is either substantially enhanced or almost entirely quenched by an underlying ferroelectric domain wall depending on its chirality, and can be further tailored by the polar domains. Unlike the extensively studied coupling mechanisms driven by charge, spin, and lattice, the interfacial tailoring effect is solely mediated by the polar symmetry, as well explained via our density functional theory calculations, pointing to a new material strategy for the functional design of nanoscale reconfigurable optical applications.
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Affiliation(s)
- Dawei Li
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Xi Huang
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0511, USA
| | - Zhiyong Xiao
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Hanying Chen
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Le Zhang
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Yifei Hao
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Jingfeng Song
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Ding-Fu Shao
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.,Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0298, USA
| | - Yongfeng Lu
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0511, USA. .,Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0298, USA.
| | - Xia Hong
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA. .,Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0298, USA.
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Zhang HY, Song XJ, Chen XG, Zhang ZX, You YM, Tang YY, Xiong RG. Observation of Vortex Domains in a Two-Dimensional Lead Iodide Perovskite Ferroelectric. J Am Chem Soc 2020; 142:4925-4931. [PMID: 32053353 DOI: 10.1021/jacs.0c00371] [Citation(s) in RCA: 98] [Impact Index Per Article: 24.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Topological defects, such as vortices and skyrmions, provide a wealth of splendid possibilities for new nanoscale devices because of their marvelous electronic, magnetic, and mechanical behaviors. Recently, great advances have been made in the study of the ferroelectric vortex in conventional perovskite oxides, such as BaTiO3 and BiFeO3. Despite extensive interest, however, no intriguing ferroelectric vortex structures have yet been found in organic-inorganic hybrid perovskites (OIHPs), which are desirable for their mechanical flexibility, ease of fabrication, and low acoustical impedance. We observed the robust vortex-antivortex topological configurations in a two-dimensional (2D) layered OIHP ferroelectric (4,4-DFPD)2PbI4 (4,4-DFPD is 4,4-difluoropiperidinium). This provides future directions for the study of perovskites and makes it a promising alternative for nanoscale ferroelectric devices in medical, micromechanical, and biomechanical applications.
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Affiliation(s)
- Han-Yue Zhang
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Xian-Jiang Song
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Xiao-Gang Chen
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Zhi-Xu Zhang
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Yu-Meng You
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Yuan-Yuan Tang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Ren-Gen Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China.,Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
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Campanini M, Erni R, Rossell MD. Probing local order in multiferroics by transmission electron microscopy. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0068] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
Abstract
The ongoing trend toward miniaturization has led to an increased interest in the magnetoelectric effect, which could yield entirely new device concepts, such as electric field-controlled magnetic data storage. As a result, much work is being devoted to developing new robust room temperature (RT) multiferroic materials that combine ferromagnetism and ferroelectricity. However, the development of new multiferroic devices has proved unexpectedly challenging. Thus, a better understanding of the properties of multiferroic thin films and the relation with their microstructure is required to help drive multiferroic devices toward technological application. This review covers in a concise manner advanced analytical imaging methods based on (scanning) transmission electron microscopy which can potentially be used to characterize complex multiferroic materials. It consists of a first broad introduction to the topic followed by a section describing the so-called phase-contrast methods, which can be used to map the polar and magnetic order in magnetoelectric multiferroics at different spatial length scales down to atomic resolution. Section 3 is devoted to electron nanodiffraction methods. These methods allow measuring local strains, identifying crystal defects and determining crystal structures, and thus offer important possibilities for the detailed structural characterization of multiferroics in the ultrathin regime or inserted in multilayers or superlattice architectures. Thereafter, in Section 4, methods are discussed which allow for analyzing local strain, whereas in Section 5 methods are addressed which allow for measuring local polarization effects on a length scale of individual unit cells. Here, it is shown that the ferroelectric polarization can be indirectly determined from the atomic displacements measured in atomic resolution images. Finally, a brief outlook is given on newly established methods to probe the behavior of ferroelectric and magnetic domains and nanostructures during in situ heating/electrical biasing experiments. These in situ methods are just about at the launch of becoming increasingly popular, particularly in the field of magnetoelectric multiferroics, and shall contribute significantly to understanding the relationship between the domain dynamics of multiferroics and the specific microstructure of the films providing important guidance to design new devices and to predict and mitigate failures.
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Yao T, Jiang Y, Chen C, Yan X, Tao A, Yang L, Li C, Sugo K, Ohta H, Ye H, Ikuhara Y, Ma X. Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity. NANO LETTERS 2020; 20:1047-1053. [PMID: 31877055 DOI: 10.1021/acs.nanolett.9b04210] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Ferroelectricity and electrical conductivity are two fundamentally incompatible properties that are difficult to simultaneously achieve in a material. Here, we combine these two contradictory properties by embedding conducting SrNbO3 micro/nanopillars into a ferroelectric SrNbO3.5 (i.e., Sr2Nb2O7) thin film. The high-Tc ferroelectric SrNbO3.5 thin film is epitaxially grown on a LaAlO3 substrate by pulsed laser deposition. The conducting SrNbO3 micro/nanopillars are introduced into the film via an electron-irradiation-induced SrNbO3.5-to-SrNbO3 phase transformation triggered by a focused electron beam. The sizes and distribution of the SrNbO3 micro/nanopillars can be accurately controlled through artificial manipulation of the electron-irradiation-induced SrNbO3.5-to-SrNbO3 phase transformation. The ferroelectric SrNbO3/SrNbO3.5 thin film with an in-plane polarization exhibits an electrical conductivity in the out-of-plane direction. Such conducting ferroelectric thin films may lead to the discovery of plentiful physical phenomena and have great potential for pyroelectric, photoelectric, and multiferroic applications.
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Affiliation(s)
- Tingting Yao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Yixiao Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Chunlin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Xuexi Yan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Ang Tao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Lixin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Cuihong Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Kenyu Sugo
- Research Institute for Electronic Science , Hokkaido University , N20W10, Kita, Sapporo 001-0020 , Japan
| | - Hiromichi Ohta
- Research Institute for Electronic Science , Hokkaido University , N20W10, Kita, Sapporo 001-0020 , Japan
| | - Hengqiang Ye
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
| | - Yuichi Ikuhara
- Advanced Institute for Materials Research , Tohoku University , 2-1-1 Katahira , Aoba-ku, Sendai 980-8577 , Japan
- Institute of Engineering Innovation , The University of Tokyo , 2-11-16 Yayoi , Bunkyo-ku, Tokyo 113-8656 , Japan
- Nanostructures Research Laboratory , Japan Fine Ceramics Center , 2-4-1 Mutsuno , Atsuta, Nagoya 456-8587 , Japan
| | - Xiuliang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China
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Dinh-Van H, Lich LV, Bui TQ, Le TV, Nguyen TG, Shimada T, Kitamura T. Intrinsic and extrinsic effects on the electrotoroidic switching in a ferroelectric notched nanodot by a homogeneous electric field. Phys Chem Chem Phys 2019; 21:25011-25022. [PMID: 31690916 DOI: 10.1039/c9cp04676c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The control of topological defects in ferroelectrics, in particular by a homogeneous electric field, has emerged as an active research direction. A polarization vortex, which is a fundamental topological defect formed in ferroelectric nanodots, has recently been demonstrated to be switchable by a homogeneous electric field through the control of the built-in electrical distribution using low-symmetry nanodots. Such electrotoroidic switching is investigated for nearly ideal systems, e.g., free-standing nanodots. However, the electrotoroidic switching may be impacted by several factors, for instance, the nanoscale effect of flexoelectricity (intrinsic effect), epitaxial strain and the frequency of the applied field (extrinsic effects). In the present study, the switching of the polarization vortex in a notched nanodot under a homogeneous electric field is investigated. The emphasis is put on a comparison between intrinsic and extrinsic effects on the vortex switching. The results show that the vortex switching takes place through alternate vortex-to-polar and polar-to-vortex transformations due to the appearance of the notch. Although the flexoelectricity breaks the symmetry of the polarization field in the notched nanodot during the polarization transformation and gives rise to an unusual behavior of the vortex core, which departs from the symmetry axis of the notched nanodot, this intrinsic effect plays a relatively insignificant role in the switching behavior of the polarization vortex. In comparison to the intrinsic effect, interestingly, the extrinsic effects strongly influence the vortex switching behavior. Specifically, the frequency of the applied electric field can alter both the shape of the toroidal hysteresis loop and the domain transformation process of the vortex switching. In addition, under substrate constraints, the magnitude of the coercive electric fields at which the vortex-to-polar and polar-to-vortex transformations occur linearly decreases with the increase of strain. The present study provides instructive information on the efficient control of a polarization vortex, which is dominated by extrinsic factors rather than intrinsic ones.
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Affiliation(s)
- Hai Dinh-Van
- School of Materials Science and Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Street, Hanoi, Vietnam.
| | - Le Van Lich
- School of Materials Science and Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Street, Hanoi, Vietnam.
| | - Tinh Quoc Bui
- Department of Civil and Environmental Engineering, Tokyo Institute of Technology, 2-12-1-W8-22, Ookayama, Meguro-ku, Tokyo 152-8552, Japan
| | - Tuan Van Le
- School of Mechanical Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Street, Hanoi, Vietnam
| | - Trong-Giang Nguyen
- School of Materials Science and Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Street, Hanoi, Vietnam.
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Takayuki Kitamura
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
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Li L, Xie L, Pan X. Real-time studies of ferroelectric domain switching: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:126502. [PMID: 31185460 DOI: 10.1088/1361-6633/ab28de] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.
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Affiliation(s)
- Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, United States of America
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