1
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Han H, Sharma A, Yoon J, Wang Z, Körner C, Deniz H, Sharma AK, Li F, Sturm C, Woltersdorf G, Parkin SSP. All-Oxide Metasurfaces Formed by Synchronized Local Ionic Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401064. [PMID: 38739090 DOI: 10.1002/adma.202401064] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2024] [Revised: 04/20/2024] [Indexed: 05/14/2024]
Abstract
Ionic gating of oxide thin films has emerged as a novel way of manipulating the properties of thin films. Most studies are carried out on single devices with a three-terminal configuration, but, by exploring the electrokinetics during the ionic gating, such a configuration with initially insulating films leads to a highly non-uniform gating response of individual devices within large arrays of the devices. It is shown that such an issue can be circumvented by the formation of a uniform charge potential by the use of a thin conducting underlayer. This synchronized local ionic gating allows for the simultaneous manipulation of the electrical, magnetic, and/or optical properties of large arrays of devices. Designer metasurfaces formed in this way from SrCoO2.5 thin films display an anomalous optical reflection of light that relies on the uniform and coherent response of all the devices. Beyond oxides, almost any material whose properties can be controlled by the addition or removal of ions via gating can form novel metasurfaces using this technique. These findings provide insights into the electrokinetics of ionic gating and a wide range of applications using synchronized local ionic gating.
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Affiliation(s)
- Hyeon Han
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Arpit Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Jiho Yoon
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Zhong Wang
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Chris Körner
- Institute of Physics, Martin-Luther Universität Halle-Wittenberg, 06120, Halle (Saale), Germany
| | - Hakan Deniz
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Ankit K Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Fan Li
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Chris Sturm
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, 04103, Leipzig, Germany
| | - Georg Woltersdorf
- Institute of Physics, Martin-Luther Universität Halle-Wittenberg, 06120, Halle (Saale), Germany
| | - Stuart S P Parkin
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
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2
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Li R, Yue Z, Luan H, Dong Y, Chen X, Gu M. Multimodal Artificial Synapses for Neuromorphic Application. RESEARCH (WASHINGTON, D.C.) 2024; 7:0427. [PMID: 39161534 PMCID: PMC11331013 DOI: 10.34133/research.0427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/06/2024] [Accepted: 06/24/2024] [Indexed: 08/21/2024]
Abstract
The rapid development of neuromorphic computing has led to widespread investigation of artificial synapses. These synapses can perform parallel in-memory computing functions while transmitting signals, enabling low-energy and fast artificial intelligence. Robots are the most ideal endpoint for the application of artificial intelligence. In the human nervous system, there are different types of synapses for sensory input, allowing for signal preprocessing at the receiving end. Therefore, the development of anthropomorphic intelligent robots requires not only an artificial intelligence system as the brain but also the combination of multimodal artificial synapses for multisensory sensing, including visual, tactile, olfactory, auditory, and taste. This article reviews the working mechanisms of artificial synapses with different stimulation and response modalities, and presents their use in various neuromorphic tasks. We aim to provide researchers in this frontier field with a comprehensive understanding of multimodal artificial synapses.
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Affiliation(s)
- Runze Li
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
- Institute of Photonic Chips,
University of Shanghai for Science and Technology, Shanghai 200093, China
- Zhangjiang Laboratory, Pudong, Shanghai 201210, China
| | - Zengji Yue
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haitao Luan
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yibo Dong
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xi Chen
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Min Gu
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
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3
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Li G, Wang Z, Chen Y, Jeon JC, Parkin SSP. Computational elements based on coupled VO 2 oscillators via tunable thermal triggering. Nat Commun 2024; 15:5820. [PMID: 38987537 PMCID: PMC11236964 DOI: 10.1038/s41467-024-49925-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Accepted: 06/19/2024] [Indexed: 07/12/2024] Open
Abstract
Computational technologies based on coupled oscillators are of great interest for energy efficient computing. A key to developing such technologies is the tunable control of the interaction among oscillators which today is accomplished by additional electronic components. Here we show that the synchronization of closely spaced vanadium dioxide (VO2) oscillators can be controlled via a simple thermal triggering element that itself is formed from VO2. The net energy consumed by the oscillators is lower during thermal coupling compared with the situation where they are oscillating independently. As the size of the oscillator shrinks from 6 μm to 200 nm both the energy efficiency and the oscillator frequency increases. Based on such oscillators with active tuning, we demonstrate AND, NAND, and NOR logic gates and various firing patterns that mimic the behavior of spiking neurons. Our findings demonstrate an innovative approach towards computational techniques based on networks of thermally coupled oscillators.
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Affiliation(s)
- Guanmin Li
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Zhong Wang
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Yuliang Chen
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Jae-Chun Jeon
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany.
| | - Stuart S P Parkin
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany.
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4
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Sim H, Doh KY, Park Y, Song K, Kim GY, Son J, Lee D, Choi SY. Crystallographic Pathways to Tailoring Metal-Insulator Transition through Oxygen Transport in VO 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402260. [PMID: 38982949 DOI: 10.1002/smll.202402260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Revised: 06/07/2024] [Indexed: 07/11/2024]
Abstract
The metal-insulator (MI) transition of vanadium dioxide (VO2) is effectively modulated by oxygen vacancies, which decrease the transition temperature and insulating resistance. Oxygen vacancies in thin films can be driven by oxygen transport using electrochemical potential. This study delves into the role of crystallographic channels in VO2 in facilitating oxygen transport and the subsequent tuning of electrical properties. A model system is designed with two types of VO2 thin films: (100)- and (001)-oriented, where channels align parallel and perpendicular to the surface, respectively. Growing an oxygen-deficient TiO2 layer on these VO2 films prompted oxygen transport from VO2 to TiO2. Notably, in (001)-VO2 film, where oxygen ions move along the open channels, the oxygen migration deepens the depleted region beyond that in (100)-VO2, leading to more pronounced changes in metal-insulator transition behaviors. The findings emphasize the importance of understanding the intrinsic crystal structure, such as channel pathways, in controlling ionic defects and customizing electrical properties for applications.
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Affiliation(s)
- Hyeji Sim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Kyung-Yeon Doh
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Yunkyu Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Kyung Song
- Materials Characterization Center, Korea Institute of Materials Science, Changwon, 51508, Republic of Korea
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Junwoo Son
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Donghwa Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
- Center of Van der Waals Quantum Solids, Institute for Basic Science (IBS) Pohang, Pohang, 37673, Republic of Korea
- Department of Semiconductor Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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5
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Meng K, Zhang X, Song B, Li BZ, Kong X, Huang S, Yang X, Jin X, Wu Y, Nie J, Cao GH, Li S. Layer-Dependent Superconductivity in Iron-Based Superconductors CsCa 2Fe 4As 4F 2 and CaKFe 4As 4. NANO LETTERS 2024; 24:6821-6827. [PMID: 38787786 DOI: 10.1021/acs.nanolett.4c01725] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2024]
Abstract
In the quasi-two-dimensional superconductor NbSe2, the superconducting transition temperature (Tc) is layer-dependent, decreasing by about 60% in the monolayer limit. However, for the extremely anisotropic copper-based high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi-2212), the Tc of the monolayer is almost identical with that of its bulk counterpart. To clarify the effect of dimensionality on superconductivity, here, we successfully fabricate ultrathin flakes of iron-based high-Tc superconductors CsCa2Fe4As4F2 and CaKFe4As4. It is found that the Tc of monolayer CsCa2Fe4As4F2 (after tuning to the optimal doping by ionic liquid gating) is about 20% lower than that of the bulk crystal, while the Tc of three-layer CaKFe4As4 decreases by 46%, showing a more pronounced dimensional effect than that of CsCa2Fe4As4F2. By carefully examining their anisotropy and the c-axis coherence length, we reveal the general trend and empirical law of the layer-dependent superconductivity in these quasi-two-dimensional superconductors.
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Affiliation(s)
- Ke Meng
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
| | - Xu Zhang
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Boqin Song
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Bai Zhuo Li
- School of Physics, Zhejiang University, Hangzhou 310058, China
| | - Xiangming Kong
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Sicheng Huang
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Xiaofan Yang
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Xiaobo Jin
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Yiyuan Wu
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Jiaying Nie
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
| | - Guang-Han Cao
- School of Physics, Zhejiang University, Hangzhou 310058, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Shiyan Li
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200438, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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6
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Li M, Zhang L, Liu W, Jin Y, Li B. Facile Estimation of Surface Oxygen Vacancies in Co 3O 4 Catalysts with a Colorimetric Method. Anal Chem 2024; 96:8999-9006. [PMID: 38758012 DOI: 10.1021/acs.analchem.4c00242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Oxygen vacancy (Ov) is known to act as an active center of the metal oxide. Quantification of surface Ov is vital for understanding the quantitative structure-activity relationship. Facile quantification characterization of surface Ov is highly desirable but still challenging. In this study, we presented a simple colorimetric method for rapidly quantifying surface Ov. As an example of metal oxide nanoparticles, Co3O4 was used to catalyze the 3,3',5,5'-tetramethylbenzidine (TMB)-H2O2 colorimetric reaction. It was found that the absorbance of the TMB-H2O2 system was dependent on the surface Ov amount in Co3O4. The investigation of the mechanism showed that the Ov-dependent absorbance would be attributed to the activity of surface Ov to easily adsorb and dissociate H2O2 into a hydroxyl radical (•OH). The absorbance signal of the TMB-H2O2 system acted as a probe to estimate the surface Ov. This colorimetric measurement could be completed in less than 20 min. The Ov concentrations obtained by the proposed colorimetric method matched well with those obtained by X-ray photoelectron spectroscopy. This method does not require any complex operation and expensive equipment and can be performed in any ordinary chemical laboratory. So, this colorimetric method is expected to become an alternative approach for quantifying the surface Ov in metal oxide nanoparticles. This method will provide essential insights into the rational design and application of Ov.
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Affiliation(s)
- Mei Li
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Key Laboratory of Analytical Chemistry for Life Science of Shaanxi Province, School of Chemistry & Chemical Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Ling Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Key Laboratory of Analytical Chemistry for Life Science of Shaanxi Province, School of Chemistry & Chemical Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Wei Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Key Laboratory of Analytical Chemistry for Life Science of Shaanxi Province, School of Chemistry & Chemical Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Yan Jin
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Key Laboratory of Analytical Chemistry for Life Science of Shaanxi Province, School of Chemistry & Chemical Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Baoxin Li
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Key Laboratory of Analytical Chemistry for Life Science of Shaanxi Province, School of Chemistry & Chemical Engineering, Shaanxi Normal University, Xi'an 710062, China
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7
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Stone G, Shi Y, Jerry M, Stoica V, Paik H, Cai Z, Schlom DG, Engel-Herbert R, Datta S, Wen H, Chen LQ, Gopalan V. In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312673. [PMID: 38441355 DOI: 10.1002/adma.202312673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Revised: 01/31/2024] [Indexed: 03/19/2024]
Abstract
The drive toward non-von Neumann device architectures has led to an intense focus on insulator-to-metal (IMT) and the converse metal-to-insulator (MIT) transitions. Studies of electric field-driven IMT in the prototypical VO2 thin-film channel devices are largely focused on the electrical and elastic responses of the films, but the response of the corresponding TiO2 substrate is often overlooked, since it is nominally expected to be electrically passive and elastically rigid. Here, in-operando spatiotemporal imaging of the coupled elastodynamics using X-ray diffraction microscopy of a VO2 film channel device on TiO2 substrate reveals two new surprises. First, the film channel bulges during the IMT, the opposite of the expected shrinking in the film undergoing IMT. Second, a microns thick proximal layer in the substrate also coherently bulges accompanying the IMT in the film, which is completely unexpected. Phase-field simulations of coupled IMT, oxygen vacancy electronic dynamics, and electronic carrier diffusion incorporating thermal and strain effects suggest that the observed elastodynamics can be explained by the known naturally occurring oxygen vacancies that rapidly ionize (and deionize) in concert with the IMT (MIT). Fast electrical-triggering of the IMT via ionizing defects and an active "IMT-like" substrate layer are critical aspects to consider in device applications.
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Affiliation(s)
- Greg Stone
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Yin Shi
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Matthew Jerry
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Vladimir Stoica
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Zhonghou Cai
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Roman Engel-Herbert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, Hausvogteiplatz 5, 10117, Berlin, Germany
| | - Suman Datta
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Haidan Wen
- Materials Science Division and Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering and Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, USA
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8
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Bidoul N, Roisin N, Flandre D. Tuning the Intrinsic Stochasticity of Resistive Switching in VO 2 Microresistors. NANO LETTERS 2024; 24:6201-6209. [PMID: 38757925 DOI: 10.1021/acs.nanolett.4c00184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Vanadium dioxide (VO2) microresistors exhibit resistive switching above a certain threshold voltage, allowing them to emulate neurons in neuromorphic systems. However, such devices present intrinsic cycle-to-cycle variations in their resistances and threshold voltages, which can be detrimental or beneficial, depending on their use. Here, we study this stochasticity in VO2 microresistors with various grain sizes and dimensions, through high-resolution electrical and optical measurements across numerous cycles. Our results highlight that the cycle-to-cycle variations in threshold voltage increase as the grain size becomes comparable to the device dimensions. We also present observations of multimodal threshold voltage distributions in the smaller-length resistors. To understand the underlying phenomenon, we investigate the relationship between the device insulating resistance and threshold voltage distributions, showing that these modes could correspond to distinct percolation paths and filaments. Our findings provide the first experimentally verified guidelines for designing VO2 devices with minimized/maximized stochasticity, depending on the targeted application.
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Affiliation(s)
- Noémie Bidoul
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
| | - Nicolas Roisin
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
| | - Denis Flandre
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
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9
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Niu SJ, Ren FD. Finite Temperature String with Order Parameter as Collective Variables for Molecular Crystal: A Case of Polymorphic Transformation of TNT under External Electric Field. Molecules 2024; 29:2549. [PMID: 38893427 PMCID: PMC11173574 DOI: 10.3390/molecules29112549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Revised: 05/08/2024] [Accepted: 05/08/2024] [Indexed: 06/21/2024] Open
Abstract
An external electric field is an effective tool to induce the polymorphic transformation of molecular crystals, which is important practically in the chemical, material, and energy storage industries. However, the understanding of this mechanism is poor at the molecular level. In this work, two types of order parameters (OPs) were constructed for the molecular crystal based on the intermolecular distance, bond orientation, and molecular orientation. Using the K-means clustering algorithm for the sampling of OPs based on the Euclidean distance and density weight, the polymorphic transformation of TNT was investigated using a finite temperature string (FTS) under external electric fields. The potential of mean force (PMF) was obtained, and the essence of the polymorphic transformation between o-TNT and m-TNT was revealed, which verified the effectiveness of the FTS method based on K-means clustering to OPs. The differences in PMFs between the o-TNT and transition state were decreased under external electric fields in comparison with those in no field. The fields parallel to the c-axis obviously affected the difference in PMF, and the relationship between the changes in PMFs and field strengths was found. Although the external electric field did not promote the convergence, the time of the polymorphic transformation was reduced under the external electric field in comparison to its absence. Moreover, under the external electric field, the polymorphic transformation from o-TNT to m-TNT occurred while that from m-TNT to o-TNT was prevented, which was explained by the dipole moment of molecule, relative permittivity, chemical potential difference, nucleation work and nucleation rate. This confirmed that the polymorphic transformation orientation of the molecular crystal could be controlled by the external electric field. This work provides an effective way to explore the polymorphic transformation of the molecular crystals at a molecular level, and it is useful to control the production process and improve the performance of energetic materials by using the external electric fields.
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Affiliation(s)
- Shi-Jie Niu
- School of Chemistry and Chemical Engineering, North University of China, Taiyuan 030051, China;
- School of Management, Wuhan Polytechnic University, Wuhan 430040, China
| | - Fu-De Ren
- School of Chemistry and Chemical Engineering, North University of China, Taiyuan 030051, China;
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10
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Ahmadi M, Atul A, de Graaf S, van der Veer E, Meise A, Tavabi AH, Heggen M, Dunin-Borkowski RE, Ahmadi M, Kooi BJ. Atomically Resolved Phase Coexistence in VO 2 Thin Films. ACS NANO 2024; 18:13496-13505. [PMID: 38752408 PMCID: PMC11140831 DOI: 10.1021/acsnano.3c10745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 04/22/2024] [Accepted: 05/01/2024] [Indexed: 05/29/2024]
Abstract
Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.
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Affiliation(s)
- Masoud Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Atul Atul
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Sytze de Graaf
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Ewout van der Veer
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Ansgar Meise
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Amir Hossein Tavabi
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Marc Heggen
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Rafal E. Dunin-Borkowski
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Majid Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Bart J. Kooi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
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11
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Postiglione WM, Yu G, Chaturvedi V, Zhou H, Heltemes K, Jacobson A, Greven M, Leighton C. Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite-Brownmillerite Transformation in Electrolyte-Gated Ultrathin La 0.5Sr 0.5CoO 3-δ. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19184-19197. [PMID: 38564510 DOI: 10.1021/acsami.4c01336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Perovskite cobaltites have emerged as archetypes for electrochemical control of materials properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed between fully oxygenated perovskite and oxygen-vacancy-ordered brownmillerite phases, enabling exceptional modulation of the crystal structure, electronic transport, thermal transport, magnetism, and optical properties. The vast majority of studies, however, have focused heavily on the perovskite and brownmillerite end points. In contrast, here we focus on hysteresis and reversibility across the entire perovskite ↔ brownmillerite topotactic transformation, combining gate-voltage hysteresis loops, minor hysteresis loops, quantitative operando synchrotron X-ray diffraction, and temperature-dependent (magneto)transport, on ion-gel-gated ultrathin (10-unit-cell) epitaxial La0.5Sr0.5CoO3-δ films. Gate-voltage hysteresis loops combined with operando diffraction reveal a wealth of new mechanistic findings, including asymmetric redox kinetics due to differing oxygen diffusivities in the two phases, nonmonotonic transformation rates due to the first-order nature of the transformation, and limits on reversibility due to first-cycle structural degradation. Minor loops additionally enable the first rational design of an optimal gate-voltage cycle. Combining this knowledge, we demonstrate state-of-the-art nonvolatile cycling of electronic and magnetic properties, encompassing >105 transport ON/OFF ratios at room temperature, and reversible metal-insulator-metal and ferromagnet-nonferromagnet-ferromagnet cycling, all at 10-unit-cell thickness with high room-temperature stability. This paves the way for future work to establish the ultimate cycling frequency and endurance of such devices.
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Affiliation(s)
- William M Postiglione
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Guichuan Yu
- Minnesota Supercomputing Institute, University of Minnesota, Minneapolis, Minnesota 55455, United States
- Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Vipul Chaturvedi
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Kei Heltemes
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Andrew Jacobson
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Martin Greven
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
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12
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Kunwar S, Cucciniello N, Mazza AR, Zhang D, Santillan L, Freiman B, Roy P, Jia Q, MacManus-Driscoll JL, Wang H, Nie W, Chen A. Reconfigurable Resistive Switching in VO 2/La 0.7Sr 0.3MnO 3/Al 2O 3 (0001) Memristive Devices for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19103-19111. [PMID: 38578811 DOI: 10.1021/acsami.3c19032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/07/2024]
Abstract
The coexistence of nonvolatile and volatile switching modes in a single memristive device provides flexibility to emulate both neuronal and synaptic functions in the brain. Furthermore, such a device structure may eliminate the need for additional circuit elements such as transistor-based selectors, enabling low-power consumption and high-density device integration in fully memristive spiking neural networks. In this work, we report dual resistive switching (RS) modes in VO2/La0.7Sr0.3MnO3 (LSMO) bilayer memristive devices. Specifically, the nonvolatile RS is driven by the movement of oxygen vacancies (Vo) at the VO2/LSMO interface and requires a higher biasing voltage, whereas the volatile RS is controlled by the metal-insulator transition (MIT) of VO2 under a lower biasing voltage. The simple device structure is electrically driven between the two RS modes and thus can operate as a one selector-one resistor (1S1R) cell, which is a desirable feature in memristive crossbar arrays to avoid the sneak-path current issue. The RS modes are found to be stable and repeatable and can be reconfigured by exploiting the interfacial and phase transition properties, and thus, they hold great promise for applications in memristive neural networks and neuromorphic computing.
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Affiliation(s)
- Sundar Kunwar
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Nicholas Cucciniello
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, New York 14260, United States
| | - Alessandro R Mazza
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Di Zhang
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Luis Santillan
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Ben Freiman
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Pinku Roy
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, New York 14260, United States
| | - Judith L MacManus-Driscoll
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Haiyan Wang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Wanyi Nie
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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13
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Guo X, Liu X, Zafar Z, Cheng G, Li Y, Nan H, Lin L, Zou J. Effects of oxygen vacancies and interfacial strain on the metal-insulator transition of VO 2 nanobeams. Phys Chem Chem Phys 2024; 26:10737-10745. [PMID: 38516809 DOI: 10.1039/d3cp06040c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (TMIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to ∼453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above ∼348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.
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Affiliation(s)
- Xitao Guo
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Xin Liu
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Zainab Zafar
- Experimental Physics Division, National Centre for Physics, Islamabad 44000, Pakistan
| | - Guiquan Cheng
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Yunhai Li
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China.
| | - Lianghua Lin
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Jijun Zou
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
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14
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Zhang L, Liu C, Cao H, Erwin AJ, Fong DD, Bhattacharya A, Yu L, Stan L, Zou C, Tirrell MV, Zhou H, Chen W. Redox Gating for Colossal Carrier Modulation and Unique Phase Control. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308871. [PMID: 38183328 DOI: 10.1002/adma.202308871] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 12/18/2023] [Indexed: 01/08/2024]
Abstract
Redox gating, a novel approach distinct from conventional electrolyte gating, combines reversible redox functionalities with common ionic electrolyte moieties to engineer charge transport, enabling power-efficient electronic phase control. This study achieves a colossal sheet carrier density modulation beyond 1016 cm-2, sustainable over thousands of cycles, all within the sub-volt regime for functional oxide thin films. The key advantage of this method lies in the controlled injection of a large quantity of carriers from the electrolyte into the channel material without the deleterious effects associated with traditional electrolyte gating processes such as the production of ionic defects or intercalated species. The redox gating approach offers a simple and practical means of decoupling electrical and structural phase transitions, enabling the isostructural metal-insulator transition and improved device endurance. The versatility of redox gating extends across multiple materials, irrespective of their crystallinity, crystallographic orientation, or carrier type (n- or p-type). This inclusivity encompasses functional heterostructures and low-dimensional quantum materials composed of sustainable elements, highlighting the broad applicability and potential of the technique in electronic devices.
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Affiliation(s)
- Le Zhang
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Changjiang Liu
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Physics, University at Buffalo, SUNY, Buffalo, NY, 14260, USA
| | - Hui Cao
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Andrew J Erwin
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Dillon D Fong
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Anand Bhattacharya
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Luping Yu
- Department of Chemistry and the James Franck Institute, University of Chicago, Chicago, IL, 60637, USA
| | - Liliana Stan
- Center for Nanoscale Materials, Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Chongwen Zou
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
| | - Matthew V Tirrell
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Wei Chen
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
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15
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Ren F, Wang X, Zhang Q, Wang X, Chang L, Zhang Z. Experimental and Theoretical Investigation of External Electric-Field-Induced Crystallization of TKX-50 from Solution by Finite-Temperature String with Order Parameters as Collective Variables for Ionic Crystals. Molecules 2024; 29:1159. [PMID: 38474669 DOI: 10.3390/molecules29051159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 02/26/2024] [Accepted: 02/28/2024] [Indexed: 03/14/2024] Open
Abstract
External electric fields are an effective tool to induce phase transformations. The crystallization of ionic crystals from solution is a common phase transformation. However, understanding of mechanisms is poor at the molecular level. In this work, we carried out an experimental and theoretical investigation of the external electric-field-induced crystallization of TKX-50 from saturated formic acid solution by finite-temperature string (FTS) with order parameters (OPs) as collective variables for ionic crystals. The minimum-free-energy path was sketched by the string method in collective variables. The results show that the K-means clustering algorithm based on Euclidean distance and density weights can be used for enhanced sampling of the OPs in external electric-field-induced crystallization of ionic crystal from solution, which improves the conventional FTS. The crystallization from solution is a process of surface-mediated nucleation. The external electric field can accelerate the evolution of the string and decrease the difference in the potential of mean forces between the crystal and the transition state. Due to the significant change in OPs induced by the external electric field in nucleation, the crystalline quality was enhanced, which explains the experimental results that the external electric field enhanced the density, detonation velocity, and detonation pressure of TKX-50. This work provides an effective way to explore the crystallization of ionic crystals from solution at the molecular level, and it is useful for improving the properties of ionic crystal explosives by using external electric fields.
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Affiliation(s)
- Fude Ren
- School of Chemistry and Chemical Engineering, North University of China, Taiyuan 030051, China
| | - Xiaolei Wang
- School of Chemistry and Chemical Engineering, North University of China, Taiyuan 030051, China
| | - Qing Zhang
- School of Chemistry and Chemical Engineering, North University of China, Taiyuan 030051, China
| | - Xiaojun Wang
- Gansu Yinguang Chemical Industry Group, Baiyin 730900, China
| | - Lingling Chang
- School of Chemistry and Chemical Engineering, North University of China, Taiyuan 030051, China
| | - Zhiteng Zhang
- School of Chemistry and Chemical Engineering, North University of China, Taiyuan 030051, China
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16
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Lee YJ, Kim Y, Gim H, Hong K, Jang HW. Nanoelectronics Using Metal-Insulator Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305353. [PMID: 37594405 DOI: 10.1002/adma.202305353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/02/2023] [Indexed: 08/19/2023]
Abstract
Metal-insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next-generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, recent progress in the field of nanoelectronics utilizing MIT is highlighted. A brief introduction to the physics of MIT and its underlying mechanisms is begun. After discussing the MIT behaviors of various Mott insulators, recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks are described. Finally, an outlook on the development and future applications of nanoelectronics utilizing MIT is provided. This review can serve as an overview and a comprehensive understanding of the design of MIT-based nanoelectronics for future electronic and optoelectronic devices.
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Affiliation(s)
- Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Youngmin Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hyeongyu Gim
- Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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17
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Yang X, Dong S. Oxidation tuning of ferroic transitions in Gd2C monolayer. J Chem Phys 2024; 160:014705. [PMID: 38174798 DOI: 10.1063/5.0177722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2023] [Accepted: 12/06/2023] [Indexed: 01/05/2024] Open
Abstract
Tuning of ferroic phases provides great opportunities for material functionalities, especially in two-dimensional materials. Here, a 4f rare-earth carbide Gd2C monolayer is predicted to be a ferromagnetic metal with large magnetization, inherited from its bulk property. Based on first-principles calculations, we propose a strategy that the surface passivation can effectively tune its ferroicity, namely, switching among ferromagnetic, antiferromagnetic, and ferroelectric phases. Metal-insulator transition also occurs accompanying these ferroic transitions. Our calculation also suggests that the magneto-optic Kerr effect and second harmonic generation are effective methods in monitoring these phase transitions.
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Affiliation(s)
- Xinyu Yang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Shuai Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
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18
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Li Z, Zhang Z, Zhou X. Chemical Modulation of Metal-Insulator Transition toward Multifunctional Applications in Vanadium Dioxide Nanostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2305234. [PMID: 37394705 DOI: 10.1002/smll.202305234] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Indexed: 07/04/2023]
Abstract
The metal-insulator transition (MIT) of vanadium dioxide (VO2 ) has been of great interest in materials science for both fundamental understanding of strongly correlated physics and a wide range of applications in optics, thermotics, spintronics, and electronics. Due to the merits of chemical interaction with accessibility, versatility, and tunability, chemical modification provides a new perspective to regulate the MIT of VO2 , endowing VO2 with exciting properties and improved functionalities. In the past few years, plenty of efforts have been devoted to exploring innovative chemical approaches for the synthesis and MIT modulation of VO2 nanostructures, greatly contributing to the understanding of electronic correlations and development of MIT-driven functionalities. Here, this comprehensive review summarizes the recent achievements in chemical synthesis of VO2 and its MIT modulation involving hydrogen incorporation, composition engineering, surface modification, and electrochemical gating. The newly appearing phenomena, mechanism of electronic correlation, and structural instability are discussed. Furthermore, progresses related to MIT-driven applications are presented, such as the smart window, optoelectronic detector, thermal microactuator, thermal radiation coating, spintronic device, memristive, and neuromorphic device. Finally, the challenges and prospects in future research of chemical modulation and functional applications of VO2 MIT are also provided.
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Affiliation(s)
- Zejun Li
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing, 211189, China
- Purple Mountain Laboratories, Nanjing, 211111, China
| | - Zhi Zhang
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing, 211189, China
| | - Xiaoli Zhou
- School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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19
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Ma Z, Fuentes-Rodriguez L, Tan Z, Pellicer E, Abad L, Herrero-Martín J, Menéndez E, Casañ-Pastor N, Sort J. Wireless magneto-ionics: voltage control of magnetism by bipolar electrochemistry. Nat Commun 2023; 14:6486. [PMID: 37838719 PMCID: PMC10576778 DOI: 10.1038/s41467-023-42206-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Accepted: 09/28/2023] [Indexed: 10/16/2023] Open
Abstract
Modulation of magnetic properties through voltage-driven ion motion and redox processes, i.e., magneto-ionics, is a unique approach to control magnetism with electric field for low-power memory and spintronic applications. So far, magneto-ionics has been achieved through direct electrical connections to the actuated material. Here we evidence that an alternative way to reach such control exists in a wireless manner. Induced polarization in the conducting material immersed in the electrolyte, without direct wire contact, promotes wireless bipolar electrochemistry, an alternative pathway to achieve voltage-driven control of magnetism based on the same electrochemical processes involved in direct-contact magneto-ionics. A significant tunability of magnetization is accomplished for cobalt nitride thin films, including transitions between paramagnetic and ferromagnetic states. Such effects can be either volatile or non-volatile depending on the electrochemical cell configuration. These results represent a fundamental breakthrough that may inspire future device designs for applications in bioelectronics, catalysis, neuromorphic computing, or wireless communications.
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Affiliation(s)
- Zheng Ma
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain
| | - Laura Fuentes-Rodriguez
- Institut de Ciència de Materials de Barcelona, CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain
- Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain
| | - Zhengwei Tan
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain
| | - Eva Pellicer
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain
| | - Llibertat Abad
- Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain
| | | | - Enric Menéndez
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain.
| | - Nieves Casañ-Pastor
- Institut de Ciència de Materials de Barcelona, CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain.
| | - Jordi Sort
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, Barcelona, 08010, Spain.
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20
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Feng C, Li BW, Dong Y, Chen XD, Zheng Y, Wang ZH, Lin HB, Jiang W, Zhang SC, Zou CW, Guo GC, Sun FW. Quantum imaging of the reconfigurable VO 2 synaptic electronics for neuromorphic computing. SCIENCE ADVANCES 2023; 9:eadg9376. [PMID: 37792938 PMCID: PMC10550222 DOI: 10.1126/sciadv.adg9376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Accepted: 07/31/2023] [Indexed: 10/06/2023]
Abstract
Neuromorphic computing has shown remarkable capabilities in silicon-based artificial intelligence, which can be optimized by using Mott materials for functional synaptic connections. However, the research efforts focus on two-terminal artificial synapses and envisioned the networks controlled by silicon-based circuits, which is difficult to develop and integrate. Here, we propose a dynamic network with laser-controlled conducting filaments based on electric field-induced local insulator-metal transition of vanadium dioxide. Quantum sensing is used to realize conductivity-sensitive imaging of conducting filament. We find that the location of filament formation is manipulated by focused laser, which is applicable to simulate the dynamical synaptic connections between the neurons. The ability to process signals with both long-term and short-term potentiation is further demonstrated with ~60 times on/off ratio while switching the pathways. This study opens the door to the development of dynamic network structures depending on easily controlled conduction pathways, mimicking the biological nervous systems.
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Affiliation(s)
- Ce Feng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Bo-Wen Li
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China
| | - Yang Dong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xiang-Dong Chen
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Yu Zheng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ze-Hao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Hao-Bin Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wang Jiang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Shao-Chun Zhang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Chong-Wen Zou
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Fang-Wen Sun
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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21
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Mondal D, Mahapatra SR, Derrico AM, Rai RK, Paudel JR, Schlueter C, Gloskovskii A, Banerjee R, Hariki A, DeGroot FMF, Sarma DD, Narayan A, Nukala P, Gray AX, Aetukuri NPB. Modulation-doping a correlated electron insulator. Nat Commun 2023; 14:6210. [PMID: 37798279 PMCID: PMC10556139 DOI: 10.1038/s41467-023-41816-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Accepted: 09/13/2023] [Indexed: 10/07/2023] Open
Abstract
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2-especially without inducing structural changes-has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard X-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5 × 1021 cm-3 without inducing any measurable structural changes. We find that the MIT temperature (TMIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.
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Affiliation(s)
- Debasish Mondal
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India
| | - Smruti Rekha Mahapatra
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India
| | | | - Rajeev Kumar Rai
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka, India
| | - Jay R Paudel
- Department of Physics, Temple University, Philadelphia, PA, USA
| | | | | | - Rajdeep Banerjee
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India
| | - Atsushi Hariki
- Department of Physics and Electronics, Graduate School of Engineering, Osaka Metropolitan University, Osaka, Japan
| | - Frank M F DeGroot
- Utrecht University, Inorganic Chemistry and Catalysis Group Universiteitsweg 99, Utrecht, The Netherlands
| | - D D Sarma
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India
| | - Pavan Nukala
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka, India
| | - Alexander X Gray
- Department of Physics, Temple University, Philadelphia, PA, USA.
| | - Naga Phani B Aetukuri
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India.
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22
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Yang Z, Wang L, Dhas JA, Engelhard MH, Bowden ME, Liu W, Zhu Z, Wang C, Chambers SA, Sushko PV, Du Y. Guided anisotropic oxygen transport in vacancy ordered oxides. Nat Commun 2023; 14:6068. [PMID: 37770428 PMCID: PMC10539514 DOI: 10.1038/s41467-023-40746-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 08/07/2023] [Indexed: 09/30/2023] Open
Abstract
Anisotropic and efficient transport of ions under external stimuli governs the operation and failure mechanisms of energy-conversion systems and microelectronics devices. However, fundamental understanding of ion hopping processes is impeded by the lack of atomically precise materials and probes that allow for the monitoring and control at the appropriate time- and length- scales. In this work, using in-situ transmission electron microscopy, we directly show that oxygen ion migration in vacancy ordered, semiconducting SrFeO2.5 epitaxial thin films can be guided to proceed through two distinctly different diffusion pathways, each resulting in different polymorphs of SrFeO2.75 with different ground electronic properties before reaching a fully oxidized, metallic SrFeO3 phase. The diffusion steps and reaction intermediates are revealed by means of ab-initio calculations. The principles of controlling oxygen diffusion pathways and reaction intermediates demonstrated here may advance the rational design of structurally ordered oxides for tailored applications and provide insights for developing devices with multiple states of regulation.
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Affiliation(s)
- Zhenzhong Yang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Le Wang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Jeffrey A Dhas
- School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR, 97331, USA
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Mark H Engelhard
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Mark E Bowden
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Wen Liu
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
- State Key Laboratory of Biogeology and Environmental Geology, China University of Geosciences, Wuhan, 430074, China
| | - Zihua Zhu
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Chongmin Wang
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Scott A Chambers
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Peter V Sushko
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA.
| | - Yingge Du
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA.
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23
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Schofield P, Bradicich A, Gurrola RM, Zhang Y, Brown TD, Pharr M, Shamberger PJ, Banerjee S. Harnessing the Metal-Insulator Transition of VO 2 in Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205294. [PMID: 36036767 DOI: 10.1002/adma.202205294] [Citation(s) in RCA: 19] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2022] [Revised: 08/02/2022] [Indexed: 06/15/2023]
Abstract
Future-generation neuromorphic computing seeks to overcome the limitations of von Neumann architectures by colocating logic and memory functions, thereby emulating the function of neurons and synapses in the human brain. Despite remarkable demonstrations of high-fidelity neuronal emulation, the predictive design of neuromorphic circuits starting from knowledge of material transformations remains challenging. VO2 is an attractive candidate since it manifests a near-room-temperature, discontinuous, and hysteretic metal-insulator transition. The transition provides a nonlinear dynamical response to input signals, as needed to construct neuronal circuit elements. Strategies for tuning the transformation characteristics of VO2 based on modification of material properties, interfacial structure, and field couplings, are discussed. Dynamical modulation of transformation characteristics through in situ processing is discussed as a means of imbuing synaptic function. Mechanistic understanding of site-selective modification; external, epitaxial, and chemical strain; defect dynamics; and interfacial field coupling in modifying local atomistic structure, the implications therein for electronic structure, and ultimately, the tuning of transformation characteristics, is emphasized. Opportunities are highlighted for inverse design and for using design principles related to thermodynamics and kinetics of electronic transitions learned from VO2 to inform the design of new Mott materials, as well as to go beyond energy-efficient computation to manifest intelligence.
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Affiliation(s)
- Parker Schofield
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Adelaide Bradicich
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Rebeca M Gurrola
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Yuwei Zhang
- Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | | | - Matt Pharr
- Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Patrick J Shamberger
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Sarbajit Banerjee
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
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24
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Han H, Jacquet Q, Jiang Z, Sayed FN, Jeon JC, Sharma A, Schankler AM, Kakekhani A, Meyerheim HL, Park J, Nam SY, Griffith KJ, Simonelli L, Rappe AM, Grey CP, Parkin SSP. Li iontronics in single-crystalline T-Nb 2O 5 thin films with vertical ionic transport channels. NATURE MATERIALS 2023; 22:1128-1135. [PMID: 37500959 PMCID: PMC10465368 DOI: 10.1038/s41563-023-01612-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2022] [Accepted: 06/19/2023] [Indexed: 07/29/2023]
Abstract
The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure, which has two-dimensional (2D) layers with very low steric hindrance, allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, probably due to its large orthorhombic unit cell along with the existence of many polymorphs. Here we demonstrate the epitaxial growth of single-crystalline T-Nb2O5 thin films, critically with the ionic transport channels oriented perpendicular to the film's surface. These vertical 2D channels enable fast Li-ion migration, which we show gives rise to a colossal insulator-metal transition, where the resistivity drops by 11 orders of magnitude due to the population of the initially empty Nb 4d0 states by electrons. Moreover, we reveal multiple unexplored phase transitions with distinct crystal and electronic structures over a wide range of Li-ion concentrations by comprehensive in situ experiments and theoretical calculations, which allow for the reversible and repeatable manipulation of these phases and their distinct electronic properties. This work paves the way for the exploration of novel thin films with ionic channels and their potential applications.
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Affiliation(s)
- Hyeon Han
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany.
| | - Quentin Jacquet
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge, UK
- Univ. Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, Grenoble, France
| | - Zhen Jiang
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA
| | - Farheen N Sayed
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge, UK
| | - Jae-Chun Jeon
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
| | - Arpit Sharma
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
| | - Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA
| | - Arvin Kakekhani
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA
| | | | - Jucheol Park
- Test Analysis Research Center, Gumi Electronics and Information Technology Research Institute, Gumi, Republic of Korea
| | - Sang Yeol Nam
- Test Analysis Research Center, Gumi Electronics and Information Technology Research Institute, Gumi, Republic of Korea
| | - Kent J Griffith
- Department of Chemistry, Northwestern University, Evanston, IL, USA
| | - Laura Simonelli
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, Spain
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA.
| | - Clare P Grey
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge, UK.
| | - Stuart S P Parkin
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany.
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25
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Zhou X, Li H, Shang Y, Meng F, Li Z, Meng K, Wu Y, Xu X, Jiang Y, Chen N, Chen J. Manipulating the metal-to-insulator transitions of VO 2 by combining compositing and doping strategies. Phys Chem Chem Phys 2023; 25:21908-21915. [PMID: 37581209 DOI: 10.1039/d3cp02224b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Vanadium dioxide (VO2) exhibits the most abrupt metal-to-insulator transition (MIT) property near room temperature among the representative 3d-orbital correlated oxides, and its structural variation during the MIT usually results in poor mechanical properties as bulk pellets. Moreover, compositing with highly resistive oxides has been reported to improve the mechanical strength of bulk VO2 since the generation and propagation of microcracks is suppressed upon thermocycling across the MIT; further, their respective impacts on electrical transportation are yet unclear. Herein, we demonstrate the role of these highly resistive oxide composites (e.g., HfO2, CoO and Al2O3) in reducing charge leakage along the microcracks within the insulating phase of VO2, leading to more abrupt MIT properties from the perspective of electrical transportation. This enables the possibility of simultaneously regulating the critical temperature and abrupt MIT transition, as well as the mechanical properties of the VO2 bulk pellets via compositing with oxides with different melting points using spark plasma-assisted reactive sintering (SPARS).
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Affiliation(s)
- Xuanchi Zhou
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Haifan Li
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Yanlong Shang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Fanqi Meng
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ziang Li
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Kangkang Meng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Yong Wu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Xiaoguang Xu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Yong Jiang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Nuofu Chen
- School of Renewable Energy, North China Electric Power University, Beijing, 102206, China.
| | - Jikun Chen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
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26
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Zhang Y, Wang Y, Wu Y, Shu X, Zhang F, Peng H, Shen S, Ogawa N, Zhu J, Yu P. Artificially controlled nanoscale chemical reduction in VO 2 through electron beam illumination. Nat Commun 2023; 14:4012. [PMID: 37419923 DOI: 10.1038/s41467-023-39812-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Accepted: 06/29/2023] [Indexed: 07/09/2023] Open
Abstract
Chemical reduction in oxides plays a crucial role in engineering the material properties through structural transformation and electron filling. Controlling the reduction at nanoscale forms a promising pathway to harvest functionalities, which however is of great challenge for conventional methods (e.g., thermal treatment and chemical reaction). Here, we demonstrate a convenient pathway to achieve nanoscale chemical reduction for vanadium dioxide through the electron-beam illumination. The electron beam induces both surface oxygen desorption through radiolytic process and positively charged background through secondary electrons, which contribute cooperatively to facilitate the vacancy migration from the surface toward the sample bulk. Consequently, the VO2 transforms into a reduced V2O3 phase, which is associated with a distinct insulator to metal transition at room temperature. Furthermore, this process shows an interesting facet-dependence with the pronounced transformation observed for the c-facet VO2 as compared with the a-facet, which is attributed to the intrinsically different oxygen vacancy formation energy between these facets. Remarkably, we readily achieve a lateral resolution of tens nanometer for the controlled structural transformation with a commercial scanning electron microscope. This work provides a feasible strategy to manipulate the nanoscale chemical reduction in complex oxides for exploiting functionalities.
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Affiliation(s)
- Yang Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Yupu Wang
- Department of Physics, The Chinese University of Hong Kong, Hong Kong, SAR 999077, China
| | - Yongshun Wu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Xinyu Shu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Fan Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Huining Peng
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Naoki Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Junyi Zhu
- Department of Physics, The Chinese University of Hong Kong, Hong Kong, SAR 999077, China.
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China.
- Frontier Science Center for Quantum Information, Beijing, 100084, China.
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27
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Guo Y, Qiu D, Shao M, Song J, Wang Y, Xu M, Yang C, Li P, Liu H, Xiong J. Modulations in Superconductors: Probes of Underlying Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209457. [PMID: 36504310 DOI: 10.1002/adma.202209457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/16/2022] [Indexed: 06/02/2023]
Abstract
The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.
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Affiliation(s)
- Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Mingxin Shao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jingyan Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Haiwen Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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28
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Rana A, Yadav A, Gupta G, Rana A. Infrared sensitive mixed phase of V 7O 16 and V 2O 5 thin-films. RSC Adv 2023; 13:15334-15341. [PMID: 37223643 PMCID: PMC10201198 DOI: 10.1039/d3ra00752a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2023] [Accepted: 05/16/2023] [Indexed: 05/25/2023] Open
Abstract
We report an infrared (IR) sensitive mixed phase of V7O16 and V2O5 thin films, grown by cathodic vacuum arc-deposition on glass substrates at relatively low temperatures. We have found that the mixed phase of V7O16 and V2O5 can be stabilized by post-annealing of amorphous VxOy between 300-400 °C, which gets fully converted into V2O5 after annealing at higher temperatures ∼450 °C. The local conversion from VxOy to V2O5 has also been demonstrated by applying different laser powers in Raman spectroscopy measurements. The optical transmission of these films increases as the content of V2O5 increases but the electrical conductivity and the optical bandgap decrease. These results are explained by the role of defects (oxygen vacancies) through the photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The IR sensitivity of the mixed phase is explained by the plasmonic absorption by the V7O16 degenerate semiconductor.
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Affiliation(s)
- Anchal Rana
- Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal University Sidhrawali Gurugram-122413 Haryana India
| | - Aditya Yadav
- CSIR-National Physical Laboratory K. S. Krishnan Marg New Delhi 110012 India
| | - Govind Gupta
- CSIR-National Physical Laboratory K. S. Krishnan Marg New Delhi 110012 India
| | - Abhimanyu Rana
- Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal University Sidhrawali Gurugram-122413 Haryana India
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29
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Cao C, Melegari M, Philippi M, Domaretskiy D, Ubrig N, Gutiérrez-Lezama I, Morpurgo AF. Full Control of Solid-State Electrolytes for Electrostatic Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211993. [PMID: 36812653 DOI: 10.1002/adma.202211993] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Revised: 02/10/2023] [Indexed: 05/05/2023]
Abstract
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈ 20 - 50 µ F c m - 2 \[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition-metal dichalcogenides, the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm-2 are demostrated, resulting in gate-induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.
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Affiliation(s)
- Chuanwu Cao
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Margherita Melegari
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Marc Philippi
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
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30
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Chang X, Li J, Mu J, Ma CH, Huang W, Zhu HF, Liu Q, Du LH, Zhong SC, Zhai ZH, Das S, Huang YL, Zhu GB, Zhu LG, Shi Q. Impact of the uniaxial strain on terahertz modulation characteristics in flexible epitaxial VO 2 film across the phase transition. OPTICS EXPRESS 2023; 31:13243-13254. [PMID: 37157465 DOI: 10.1364/oe.488947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Exploring flexible electronics is on the verge of innovative breakthroughs in terahertz (THz) communication technology. Vanadium dioxide (VO2) with insulator-metal transition (IMT) has excellent application potential in various THz smart devices, but the associated THz modulation properties in the flexible state have rarely been reported. Herein, we deposited an epitaxial VO2 film on a flexible mica substrate via pulsed-laser deposition and investigated its THz modulation properties under different uniaxial strains across the phase transition. It was observed that the THz modulation depth increases under compressive strain and decreases under tensile strain. Moreover, the phase-transition threshold depends on the uniaxial strain. Particularly, the rate of the phase transition temperature depends on the uniaxial strain and reaches approximately 6 °C/% in the temperature-induced phase transition. The optical trigger threshold in laser-induced phase transition decreased by 38.9% under compressive strain but increased by 36.7% under tensile strain, compared to the initial state without uniaxial strain. These findings demonstrate the uniaxial strain-induced low-power triggered THz modulation and provide new insights for applying phase transition oxide films in THz flexible electronics.
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31
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Weerasinghe H, Wu HF. Single-Step Room Temperature Synthesis of Vanadium Oxide Nanosheets for Seawater/Wastewater Purification by Photothermal Evaporation under One Sun Illumination. J IND ENG CHEM 2023. [DOI: 10.1016/j.jiec.2023.03.043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/09/2023]
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32
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Eshete YA, Hwang E, Kim J, Nguyen PL, Yu WJ, Kong BS, Jang MS, Lee J, Cho S, Yang H. A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209089. [PMID: 36655805 DOI: 10.1002/adma.202209089] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Revised: 01/15/2023] [Indexed: 06/17/2023]
Abstract
Modulating semiconducting channel potential has been used for electrical switching in transistors without biological plasticity operations that are critical for energy-efficient neuromorphic computing. To achieve efficient data processing, alternative transport mechanisms, such as tunneling and thermionic emission, have been introduced with 2D materials. Here, a polymorphic memtransistor based on atomically thin Mo0.91 W0.09 Te2 is presented, where the lattice and electronic structures of the lateral device channel can be tuned as either metallic (1T') or semiconducting (2H) phases by electrical gating. The structural and electronic phase change of the channel material, optimized in Mo0.91 W0.09 Te2 , is explored using transport and optical measurements at the device scale. Based on the phase transition, the polymorphic memtransistor demonstrates a high on/off ratio (up to 105 ), low subthreshold swing (down to 80 mV dec-1 ), and various memristive behaviors, which are distinguished from traditional phase-change memory, transistors, and passive memristors for diverse neuromorphic and in-memory computing.
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Affiliation(s)
- Yonas Assefa Eshete
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Eunji Hwang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Junhyung Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Phuong Lien Nguyen
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Bai Sun Kong
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Min Seok Jang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul, 03760, South Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
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33
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Hu P, Hu P, Vu TD, Li M, Wang S, Ke Y, Zeng X, Mai L, Long Y. Vanadium Oxide: Phase Diagrams, Structures, Synthesis, and Applications. Chem Rev 2023; 123:4353-4415. [PMID: 36972332 PMCID: PMC10141335 DOI: 10.1021/acs.chemrev.2c00546] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
Abstract
Vanadium oxides with multioxidation states and various crystalline structures offer unique electrical, optical, optoelectronic and magnetic properties, which could be manipulated for various applications. For the past 30 years, significant efforts have been made to study the fundamental science and explore the potential for vanadium oxide materials in ion batteries, water splitting, smart windows, supercapacitors, sensors, and so on. This review focuses on the most recent progress in synthesis methods and applications of some thermodynamically stable and metastable vanadium oxides, including but not limited to V2O3, V3O5, VO2, V3O7, V2O5, V2O2, V6O13, and V4O9. We begin with a tutorial on the phase diagram of the V-O system. The second part is a detailed review covering the crystal structure, the synthesis protocols, and the applications of each vanadium oxide, especially in batteries, catalysts, smart windows, and supercapacitors. We conclude with a brief perspective on how material and device improvements can address current deficiencies. This comprehensive review could accelerate the development of novel vanadium oxide structures in related applications.
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Zhang R, Yang W, Zhang L, Huang T, Niu L, Xu P, Chen Z, Chen X, Hu W, Dai N. Reversible Entropy-Driven Defect Migration and Insulator-Metal Transition Suppression in VO 2 Nanostructures for Phase-Change Electronic Switching. Chemphyschem 2023:e202300059. [PMID: 36880971 DOI: 10.1002/cphc.202300059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 03/06/2023] [Accepted: 03/06/2023] [Indexed: 03/08/2023]
Abstract
Oxygen defects are among essential issues and required to be manipulated in correlated electronic oxides with insulator-metal transition (IMT). Besides, surface and interface control are necessary but challenging in field-induced electronic switching towards advanced IMT-triggered transistors and optical modulators. Herein, we demonstrated reversible entropy-driven oxygen defect migrations and reversible IMT suppression in vanadium dioxide (VO2 ) phase-change electronic switching. The initial IMT was suppressed with oxygen defects, which is caused by the entropy change during reversed surface oxygen ionosorption on the VO2 nanostructures. This IMT suppression is reversible and reverts when the adsorbed oxygen extracts electrons from the surface and heals defects again. The reversible IMT suppression observed in the VO2 nanobeam with M2 phase is accompanied by large variations in the IMT temperature. We also achieved irreversible and stable IMT by exploiting an Al2 O3 partition layer prepared by atomic layer deposition (ALD) to disrupt the entropy-driven defect migration. We expected that such reversible modulations would be helpful for understanding the origin of surface-driven IMT in correlated vanadium oxides, and constructing functional phase-change electronic and optical devices.
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Affiliation(s)
- Rui Zhang
- State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wanli Yang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Lepeng Zhang
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Tiantian Huang
- State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Linkui Niu
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Peiran Xu
- State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhimin Chen
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Xin Chen
- State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Ning Dai
- State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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35
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Wu J, Bozovic I. Superconductivity in a strange metal. Sci Bull (Beijing) 2023; 68:851-853. [PMID: 37031079 DOI: 10.1016/j.scib.2023.03.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
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36
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He Z, Qi Z, Yang B, Lu P, Shen J, Dilley NR, Zhang X, Wang H. Controllable Phase Transition Properties in VO 2 Films via Metal-Ion Intercalation. NANO LETTERS 2023; 23:1119-1127. [PMID: 36719402 DOI: 10.1021/acs.nanolett.2c03286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
VO2 has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature (Tc) tuning in VO2 is desired. In this study, tailorable SMT characteristics in VO2 films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li+ during the intercalation process, Tc of VO2 can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective Tc tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO2 introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO2 phase transition toward room-temperature device applications and enables future real-time phase change property tuning.
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Affiliation(s)
- Zihao He
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zhimin Qi
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Bo Yang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Ping Lu
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Jianan Shen
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Neil R Dilley
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xinghang Zhang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
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37
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Shi R, Wu Y, Xin Z, Guo J, Li Z, Zhao B, Peng R, Li C, Wang E, Wang B, Zhang X, Cheng C, Liu K. Liquid Precursor-Guided Phase Engineering of Single-Crystal VO 2 Beams. Angew Chem Int Ed Engl 2023; 62:e202301421. [PMID: 36808416 DOI: 10.1002/anie.202301421] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2023] [Revised: 02/20/2023] [Accepted: 02/20/2023] [Indexed: 02/23/2023]
Abstract
The study of VO2 flourishes due to its rich competing phases induced by slight stoichiometry variations. However, the vague mechanism of stoichiometry manipulation makes the precise phase engineering of VO2 still challenging. Here, stoichiometry manipulation of single-crystal VO2 beams in liquid-assisted growth is systematically studied. Contrary to previous experience, oxygen-rich VO2 phases are abnormally synthesized under a reduced oxygen concentration, revealing the important function of liquid V2 O5 precursor: It submerges VO2 crystals and stabilizes their stoichiometric phase (M1) by isolating them from the reactive atmosphere, while the uncovered crystals are oxidized by the growth atmosphere. By varying the thickness of liquid V2 O5 precursor and thus the exposure time of VO2 to the atmosphere, various VO2 phases (M1, T, and M2) can be selectively stabilized. Furthermore, this liquid precursor-guided growth can be used to spatially manages multiphase structures in single VO2 beams, enriching their deformation modes for actuation applications.
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Affiliation(s)
- Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zonglin Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Bochen Zhao
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Chenyu Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Xiaolong Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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38
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Plugaru R, Mihalache I, Romaniţan C, Comanescu F, Vulpe S, Craciun G, Plugaru N, Djourelov N. Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering. SENSORS (BASEL, SWITZERLAND) 2023; 23:1759. [PMID: 36850358 PMCID: PMC9964540 DOI: 10.3390/s23041759] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Revised: 01/30/2023] [Accepted: 02/01/2023] [Indexed: 06/18/2023]
Abstract
In this study we analyzed the structure and light-sensing properties of as-deposited vanadium oxide thin films, prepared by RF sputtering in different Ar:O2 flow rate conditions, at low temperature (e.g., 65 °C). X-ray diffraction (XRD), Scanning Electron Microscopy (SEM-EDX), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to analyze the film microstructure, composition and the oxidation states of vanadium ions. The SEM micrographs evidence VxOy films with smooth surfaces, whereas the XRD patterns show their amorphous structure. Raman spectra indicate an increased structural disorder in the films deposited in Ar:O2 flow comparatively with those deposited solely in Ar flow. The XPS data suggest the modification of the oxidation state from V4+ to V5+, thus proving the formation of the V2O5 phase when increasing the oxygen content, which further affects the films' optical properties. We observed a good stability of the photogenerated current in Si/SiO2/VxOy/TiN heterostructures upon excitation with pulses of UV (360 nm), VIS (white light) and NIR (860 nm) light. The responsivity, detectivity and linear dynamic range parameters increase with the O/V ratio in the VxOy films, reaching comparable values with photodetectors based on crystalline V2O5 or VO2.
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Affiliation(s)
- Rodica Plugaru
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Iuliana Mihalache
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Cosmin Romaniţan
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Florin Comanescu
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Silviu Vulpe
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Gabriel Craciun
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Neculai Plugaru
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Nikolay Djourelov
- Extreme Light Infrastructure-Nuclear Physics (ELI-NP), “Horia Hulubei” National R&D Institute for Physics and Nuclear Engineering (IFIN-HH), 077125 Magurele, Romania
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39
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Han H, Zhou H, Guillemard C, Valvidares M, Sharma A, Li Y, Sharma AK, Kostanovskiy I, Ernst A, Parkin SSP. Reversal of Anomalous Hall Effect and Octahedral Tilting in SrRuO 3 Thin Films via Hydrogen Spillover. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207246. [PMID: 36271718 DOI: 10.1002/adma.202207246] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Revised: 09/18/2022] [Indexed: 06/16/2023]
Abstract
The perovskite SrRuO3 (SRO) is a strongly correlated oxide whose physical and structural properties are strongly intertwined. Notably, SRO is an itinerant ferromagnet that exhibits a large anomalous Hall effect (AHE) whose sign can be readily modified. Here, a hydrogen spillover method is used to tailor the properties of SRO thin films via hydrogen incorporation. It is found that the magnetization and Curie temperature of the films are strongly reduced and, at the same time, the structure evolves from an orthorhombic to a tetragonal phase as the hydrogen content is increased up to ≈0.9 H per SRO formula unit. The structural phase transition is shown, via in situ crystal truncation rod measurements, to be related to tilting of the RuO6 octahedral units. The significant changes observed in magnetization are shown, via density functional theory (DFT), to be a consequence of shifts in the Fermi level. The reported findings provide new insights into the physical properties of SRO via tailoring its lattice symmetry and emergent physical phenomena via the hydrogen spillover technique.
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Affiliation(s)
- Hyeon Han
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Charles Guillemard
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, E-08290, Spain
| | - Manuel Valvidares
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, E-08290, Spain
| | - Arpit Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Yan Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Ankit K Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Ilya Kostanovskiy
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Arthur Ernst
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Institute for Theoretical Physics, Johannes Kepler University, Linz, 4040, Austria
| | - Stuart S P Parkin
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
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40
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Wang Z, Ji X, Dong N, Chen C, Yan Z, Cao X, Wang J. Femtosecond laser-induced phase transition in VO 2 films. OPTICS EXPRESS 2022; 30:47421-47429. [PMID: 36558670 DOI: 10.1364/oe.477910] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Accepted: 11/28/2022] [Indexed: 06/17/2023]
Abstract
VO2 is a very promising material due to its semiconductor-metal phase transition, however, the research on fs laser-induced phase transition is still very controversial, which greatly limits its development in ultrafast optics. In this work, the fs laser-induced changes in the optical properties of VO2 films were studied with a variable-temperature Z-scan. At room temperature, VO2 consistently maintained nonlinear absorption properties at laser repetition frequencies below 10 kHz while laser-induced phase transition properties appeared at higher repetition frequencies. It was found by temperature variation experiments at 100 kHz that the modulation depth of the laser-induced VO2 phase transition was consistent with that of the ambient temperature-induced phase transition, which was increased linearly with thickness, further confirming that the phase transition was caused by the accumulation of thermal effects of a high-repetition-frequency laser. The phase transition process is reversible and causes substantial changes in optical properties of the film, which holds significant promise for all-optical switches and related applications.
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41
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Park Y, Sim H, Doh KY, Jo M, Lee D, Choi SY, Son J. Anionic Flow Valve Across Oxide Heterointerfaces by Remote Electron Doping. NANO LETTERS 2022; 22:9306-9312. [PMID: 36395459 DOI: 10.1021/acs.nanolett.2c02736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
As an analogue of charged electron flows, the ionic flow could be controlled by the electronic band alignment due to the ambipolar nature of diffusion in the ionic crystal. Here, we demonstrate the active control of the anionic diffusion across heterointerfaces through remote electron doping in the capping layers. In contrast to the spontaneous ionic flux from the underlying VO2 layers to the undoped TiO2 capping layers, the activated Nb dopants in the TiO2 capping layers substantially restrict the ionic flux, despite identical growth conditions. The increase of Fermi level by Nb donors in TiO2 prevents electron flux from being generated across the interfaces by the heightening of a Schottky barrier; this electron shortage generates a kinetic close valve for the flow of negatively charged oxygen ions. Thus, these results demonstrate the importance of electron supply on charged ionic flow, thereby suggesting an unprecedented strategy for ionic-defect-induced emergent properties at interfaces.
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Affiliation(s)
- Yunkyu Park
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Hyeji Sim
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Kyung-Yeon Doh
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Minguk Jo
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Donghwa Lee
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Junwoo Son
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
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42
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Jin L, Shi Y, Allen FI, Chen LQ, Wu J. Probing the Critical Nucleus Size in the Metal-Insulator Phase Transition of VO_{2}. PHYSICAL REVIEW LETTERS 2022; 129:245701. [PMID: 36563252 DOI: 10.1103/physrevlett.129.245701] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 10/25/2022] [Indexed: 06/17/2023]
Abstract
In a first-order phase transition, critical nucleus size governs nucleation kinetics, but the direct experimental test of the theory and determination of the critical nucleation size have been achieved only recently in the case of ice formation in supercooled water. The widely known metal-insulator phase transition (MIT) in strongly correlated VO_{2} is a first-order electronic phase transition coupled with a solid-solid structural transformation. It is unclear whether classical nucleation theory applies in such a complex case. In this Letter, we directly measure the critical nucleus size of the MIT by introducing size-controlled nanoscale nucleation seeds with focused ion irradiation at the surface of a deeply supercooled metal phase of VO_{2}. The results compare favorably with classical nucleation theory and are further explained by phase-field modeling. This Letter validates the application of classical nucleation theory as a parametrizable model to describe phase transitions of strongly correlated electron materials.
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Affiliation(s)
- Lei Jin
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Yin Shi
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Frances I Allen
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Junqiao Wu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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43
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Guo W, Li M, Wu X, Liu Y, Ou T, Xiao C, Qiu Z, Zheng Y, Wang Y. Nonvolatile n-Type Doping and Metallic State in Multilayer-MoS 2 Induced by Hydrogenation Using Ionic-Liquid Gating. NANO LETTERS 2022; 22:8957-8965. [PMID: 36342413 DOI: 10.1021/acs.nanolett.2c03159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Manipulation of the carrier density of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Herein, we applied the ionic-liquid-gating (ILG) method to inject the smallest ions, H+, into layered MoS2 to manipulate its carrier concentration. The measurements demonstrate that the injection of H+ realizes a nonvolatile n-type doping and metallic state in multilayer-MoS2 with a concentration of injection electron of ∼1.08 × 1013 cm-2 but has no effect on monolayer-MoS2, which clearly reveals that the H+ is injected into the interlayer of MoS2, not in the crystal lattice. The H+-injected multilayer-MoS2 was then used as the contact electrodes of a monolayer-MoS2 field effect transistor to improve the contact quality, and its performance has been enhanced. Our work deepens the understanding of the ILG technology and extends its application in TMDs.
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Affiliation(s)
- Wenxuan Guo
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Mengge Li
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Xiaoxiang Wu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yali Liu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Tianjian Ou
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Cong Xiao
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Zhanjie Qiu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yuan Zheng
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yewu Wang
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing210093, People's Republic of China
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44
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Kim MS, Choi DH, Lee IH, Kim WS, Kwon D, Bae MH, Kim JJ. Gate-voltage-induced reversible electrical phase transitions in Mo 0.67W 0.33Se 2 devices. NANOSCALE 2022; 14:16611-16617. [PMID: 36317650 DOI: 10.1039/d2nr04311d] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Tunable electrical phase transitions based on the structural and quantum-state phase transitions in two-dimensional transition-metal dichalcogenides have attracted attention in both semiconducting electronics and quantum electronics applications. Here, we report gate-voltage-induced reversible electrical phase transitions in Mo0.67W0.33Se2 (MoWSe) field-effect transistors prepared on SiO2/Si substrates. In gate-induced depletion regions of the 2H phase, an electrical current resumes flow at 150 K < T < 200 K with decreasing T irrespective of the layer number (n) for MoWSe when n < 20. The newly appearing electron-doped-type conducting channel again enters the 2H-phase region when the back-gate voltage increases, accompanied by the negative differential transconductance for four-layer and monolayer devices or by a deflection point in the transfer curves for a multilayer device. The thermal activation energies of the new conducting and 2H-phase branches differ by one order of magnitude at the same gate voltage for both the four-layer and monolayer cases, indicating that the electrical band at the Fermi level was modified. The hysteresis measurements for the gate voltage were performed with a five-layer device, which confirms the reversible electrical transition behavior. The possible origins of the nucleated conducting phase in the depletion region of the 2H phase of MoWSe are discussed.
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Affiliation(s)
- Min-Sik Kim
- Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea.
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea.
| | - Dong-Hwan Choi
- Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea.
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea.
| | - In-Ho Lee
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea.
| | - Wu-Sin Kim
- Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| | - Duhyuk Kwon
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea.
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Myung-Ho Bae
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea.
- Department of Nano Science, University of Science and Technology, Daejeon, 34113, Republic of Korea
| | - Ju-Jin Kim
- Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea.
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45
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Li L, Wang M, Zhou Y, Zhang Y, Zhang F, Wu Y, Wang Y, Lyu Y, Lu N, Wang G, Peng H, Shen S, Du Y, Zhu Z, Nan CW, Yu P. Manipulating the insulator-metal transition through tip-induced hydrogenation. NATURE MATERIALS 2022; 21:1246-1251. [PMID: 36175522 DOI: 10.1038/s41563-022-01373-4] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2021] [Accepted: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Manipulating the insulator-metal transition in strongly correlated materials has attracted a broad range of research activity due to its promising applications in, for example, memories, electrochromic windows and optical modulators1,2. Electric-field-controlled hydrogenation using ionic liquids3-6 and solid electrolytes7-9 is a useful strategy to obtain the insulator-metal transition with corresponding electron filling, but faces technical challenges for miniaturization due to the complicated device architecture. Here we demonstrate reversible electric-field control of nanoscale hydrogenation into VO2 with a tunable insulator-metal transition using a scanning probe. The Pt-coated probe serves as an efficient catalyst to split hydrogen molecules, while the positive-biased voltage accelerates hydrogen ions between the tip and sample surface to facilitate their incorporation, leading to non-volatile transformation from insulating VO2 into conducting HxVO2. Remarkably, a negative-biased voltage triggers dehydrogenation to restore the insulating VO2. This work demonstrates a local and reversible electric-field-controlled insulator-metal transition through hydrogen evolution and presents a versatile pathway to exploit multiple functional devices at the nanoscale.
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Affiliation(s)
- Linglong Li
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- School of Physics, Southeast University, Nanjing, China
| | - Meng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Yadong Zhou
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, USA
- Key Laboratory of Geographic Information Science of the Ministry of Education, School of Geographic Science, East China Normal University, Shanghai, China
| | - Yang Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Fan Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Yongshun Wu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Yujia Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Yingjie Lyu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Guopeng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Huining Peng
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Yingge Du
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, USA
| | - Zihua Zhu
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, USA
| | - Ce-Wen Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China.
- Frontier Science Center for Quantum Information, Beijing, China.
- Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing, China.
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46
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Wilson CE, Gibson AE, Cuillier PM, Li CH, Crosby PHN, Trigg EB, Najmr S, Murray CB, Jinschek JR, Doan-Nguyen V. Local structure elucidation of tungsten-substituted vanadium dioxide (V[Formula: see text]W[Formula: see text]O[Formula: see text]). Sci Rep 2022; 12:14767. [PMID: 36042264 PMCID: PMC9428210 DOI: 10.1038/s41598-022-18575-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/06/2022] [Accepted: 08/16/2022] [Indexed: 11/08/2022] Open
Abstract
Initially, vanadium dioxide seems to be an ideal first-order phase transition case study due to its deceptively simple structure and composition, but upon closer inspection there are nuances to the driving mechanism of the metal-insulator transition (MIT) that are still unexplained. In this study, a local structure analysis across a bulk powder tungsten-substitution series is utilized to tease out the nuances of this first-order phase transition. A comparison of the average structure to the local structure using synchrotron x-ray diffraction and total scattering pair-distribution function methods, respectively, is discussed as well as comparison to bright field transmission electron microscopy imaging through a similar temperature-series as the local structure characterization. Extended x-ray absorption fine structure fitting of thin film data across the substitution-series is also presented and compared to bulk. Machine learning technique, non-negative matrix factorization, is applied to analyze the total scattering data. The bulk MIT is probed through magnetic susceptibility as well as differential scanning calorimetry. The findings indicate the local transition temperature ([Formula: see text]) is less than the average [Formula: see text] supporting the Peierls-Mott MIT mechanism, and demonstrate that in bulk powder and thin-films, increasing tungsten-substitution instigates local V-oxidation through the phase pathway VO[Formula: see text] V[Formula: see text]O[Formula: see text] V[Formula: see text]O[Formula: see text].
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Affiliation(s)
- Catrina E. Wilson
- Materials Science and Engineering, Ohio State University, Columbus, OH 43212 USA
| | - Amanda E. Gibson
- Materials Science and Engineering, Ohio State University, Columbus, OH 43212 USA
| | - Paul M. Cuillier
- Materials Science and Engineering, Ohio State University, Columbus, OH 43212 USA
| | - Cheng-Han Li
- Materials Science and Engineering, Ohio State University, Columbus, OH 43212 USA
| | - Patrice H. N. Crosby
- Chemistry, Ohio State University, Columbus, OH 43212 USA
- Present Address: Human Centered Design, Cornell University, Ithaca, NY 14853 USA
| | - Edward B. Trigg
- Materials & Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 USA
- Present Address: Battelle Memorial Institute, Columbus, OH 43201 USA
| | - Stan Najmr
- Chemistry, University of Pennsylvania, Philadelphia, PA 19143 USA
| | - Christopher B. Murray
- Present Address: Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19143 USA
| | - Joerg R. Jinschek
- Materials Science and Engineering, Ohio State University, Columbus, OH 43212 USA
- Present Address: DTU Nanolab, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Vicky Doan-Nguyen
- Materials Science and Engineering, Ohio State University, Columbus, OH 43212 USA
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47
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Mohebbi E, Pavoni E, Mencarelli D, Stipa P, Pierantoni L, Laudadio E. Insights into first-principles characterization of the monoclinic VO 2(B) polymorph via DFT + U calculation: electronic, magnetic and optical properties. NANOSCALE ADVANCES 2022; 4:3634-3646. [PMID: 36134342 PMCID: PMC9400504 DOI: 10.1039/d2na00247g] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 07/22/2022] [Indexed: 05/14/2023]
Abstract
We have studied the structural, electronic, magnetic, and optical properties of the VO2(B) polymorph using first-principles calculations based on density functional theory (DFT). This polymorph was found to display four optimized structures namely VO2(B)PP, VO2(B)LP, VO2(B)PPD, and VO2(B)LPD using the generalized gradient approximation (GGA) PBE exchange-correlation functional by including/excluding van der Waals interaction. Our derivation provides a theoretical justification for adding an on-site Coulomb U value in the conventional DFT calculations to allow a direct comparison of the two methods. We predicted a zero bandgap of the VO2(B) structure based on GGA/PBE. However, by GGA/PBE + U, we found accurate bandgap values of 0.76, 0.66, and 0.70 eV for VO2(B)PP, VO2(B)LP, and VO2(B)PPD, respectively. The results obtained from DFT + U were accompanied by a structural transition from the metallic to semiconductor property. Here, we verified the non-magnetic characteristic of the monoclinic VO2(B) phase with some available experimental and theoretical data. However, the debate on the magnetic property of this polymorph remains unresolved. Imaginary and real parts of the dielectric function, as computed with the GGA/PBE functional and the GGA/PBE + U functional, were also reported. The first absorption peaks of all considered geometries in the imaginary part of the dielectric constants indicated that the VO2(B) structure could perfectly absorb infrared light. The computed static dielectric constants with positive values, as derived from the optical properties, confirmed the conductivity of this material. Among the four proposed geometries of VO2(B) in this study, the outcomes obtained by VO2(B)PPD reveal good results owing to the excellent consistency of its bandgap, magnetic and optical properties with other experimental and theoretical observations. The theoretical framework in our study will provide useful insight for future practical applications of the VO2(B) polymorph in electronics and optoelectronics.
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Affiliation(s)
- Elaheh Mohebbi
- Department of Materials, Environmental Sciences and Urban Planning, Marche Polytechnic University 60131 Ancona Italy
| | - Eleonora Pavoni
- Department of Materials, Environmental Sciences and Urban Planning, Marche Polytechnic University 60131 Ancona Italy
| | - Davide Mencarelli
- Information Engineering Department, Marche Polytechnic University 60131 Ancona Italy
| | - Pierluigi Stipa
- Department of Materials, Environmental Sciences and Urban Planning, Marche Polytechnic University 60131 Ancona Italy
| | - Luca Pierantoni
- Information Engineering Department, Marche Polytechnic University 60131 Ancona Italy
| | - Emiliano Laudadio
- Department of Materials, Environmental Sciences and Urban Planning, Marche Polytechnic University 60131 Ancona Italy
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48
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Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches. Nat Commun 2022; 13:4609. [PMID: 35948541 PMCID: PMC9365788 DOI: 10.1038/s41467-022-32081-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Accepted: 07/14/2022] [Indexed: 11/09/2022] Open
Abstract
Mott threshold switching, which is observed in quantum materials featuring an electrically fired insulator-to-metal transition, calls for delicate control of the percolative dynamics of electrically switchable domains on a nanoscale. Here, we demonstrate that embedded metallic nanoparticles (NP) dramatically promote metastability of switchable metallic domains in single-crystal-like VO2 Mott switches. Using a model system of Pt-NP-VO2 single-crystal-like films, interestingly, the embedded Pt NPs provide 33.3 times longer ‘memory’ of previous threshold metallic conduction by serving as pre-formed ‘stepping-stones’ in the switchable VO2 matrix by consecutive electical pulse measurement; persistent memory of previous firing during the application of sub-threshold pulses was achieved on a six orders of magnitude longer timescale than the single-pulse recovery time of the insulating resistance in Pt-NP-VO2 Mott switches. This discovery offers a fundamental strategy to exploit the geometric evolution of switchable domains in electrically fired transition and potential applications for non-Boolean computing using quantum materials. Control of percolative dynamics of metal and insulator domains during electrically triggered insulator-metal transition underlies applications in energy-efficient switches. Jo et al. show that embedded metallic nanoparticles enhance the metastability and memory effects of metallic domains in VO2 switches.
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49
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Lee YJ, Hong K, Na K, Yang J, Lee TH, Kim B, Bark CW, Kim JY, Park SH, Lee S, Jang HW. Nonvolatile Control of Metal-Insulator Transition in VO 2 by Ferroelectric Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203097. [PMID: 35713476 DOI: 10.1002/adma.202203097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Revised: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Controlling phase transitions in correlated materials yields emergent functional properties, providing new aspects to future electronics and a fundamental understanding of condensed matter systems. With vanadium dioxide (VO2 ), a representative correlated material, an approach to control a metal-insulator transition (MIT) behavior is developed by employing a heteroepitaxial structure with a ferroelectric BiFeO3 (BFO) layer to modulate the interaction of correlated electrons. Owing to the defect-alleviated interfaces, the enhanced coupling between the correlated electrons and ferroelectric polarization is successfully demonstrated by showing a nonvolatile control of MIT of VO2 at room temperature. The ferroelectrically-tunable MIT can be realized through the Mott transistor (VO2 /BFO/SrRuO3 ) with a remanent polarization of 80 µC cm-2 , leading to a nonvolatile MIT behavior through the reversible electrical conductance with a large on/off ratio (≈102 ), long retention time (≈104 s), and high endurance (≈103 cycles). Furthermore, the structural phase transition of VO2 is corroborated by ferroelectric polarization through in situ Raman mapping analysis. This study provides novel design principles for heteroepitaxial correlated materials and innovative insight to modulate multifunctional properties.
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Affiliation(s)
- Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Material Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kyeongho Na
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Jiwoong Yang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byungsoo Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, South Korea
| | - Jae Young Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sung Hyuk Park
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sanghan Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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50
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Cao H, Deng S, Tie Z, Tian J, Liu L, Niu Z. Large-area hydrated vanadium oxide/carbon nanotube composite films for high-performance aqueous zinc-ion batteries. Sci China Chem 2022. [DOI: 10.1007/s11426-022-1292-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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