Mercury-Based Cuprate High-Transition Temperature Grain-Boundary Junctions and SQUIDs Operating Above 110 Kelvin

Preparation and superconductivity of iron selenide thin films

FeSe(x) (x = 0.80,0.84,0.88,0.92) thin films were prepared on SrTiO(3)(001)(STO), (La,Sr)(Al,Ta)O(3)(001) (LSAT), and LaAlO(3)(001) (LAO) substrates by a pulsed laser deposition method. All of the thin films show single-phase and c-axis oriented epitaxial growth, and are superconducting. Among them, the FeSe(0.88) thin films show a T(c,onset) of 11.8 K and a T(c,0) of 3.4 K. The upper critical magnetic field is estimated to be 14.0 T.

MgB2 superconducting thin films with a transition temperature of 39 kelvin

We fabricated high-quality c axis-oriented epitaxial MgB2 thin films using a pulsed laser deposition technique. The thin films grown on (1 i 0 2) Al2O3 substrates have a transition temperature of 39 kelvin. The critical current density in zero field is approximately 6 x 10(6) amperes per cubic centimeter at 5 kelvin and approximately 3 x 10(5) amperes per cubic centimeter at 35 kelvin, which suggests that this compound has potential for electronic device applications, such as microwave devices and superconducting quantum interference devices. For the films deposited on Al2O3, x-ray diffraction patterns indicate a highly c axis-oriented crystal structure perpendicular to the substrate surface.

SCIENCE AND TECHNOLOGY OF HIGH-TEMPERATURE SUPERCONDUCTING FILMS

▪ Abstract  The field of high-temperature superconducting thin films is reviewed, focusing on the synthesis and properties of materials that are most promising for device applications. Current materials issues that are important for emerging device applications of oxide superconducting films are discussed, with emphasis on the growth, characterization, and use of epitaxial films. The status of specific superconducting device technologies is briefly reviewed.