Ultralow-switching current density multilevel phase-change memory on a flexible substrate

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

The excessive power consumption is challenging for phase change memory (PCM) on its way to becoming universal memory in complex hierarchies of memory systems. Here, from the perspective of device structure, by adding a nanocurrent-channel (NCC) layer between the electrode layer and phase change layer, a RESET power consumption reduction by more than 95% and 10 times faster SET speed were realized simultaneously. Through the first principle calculations, Au and SiO2 were screened as the metal and insulating matrix material of NCC layer, respectively. Our PCM device with a Au-SiO2 NCC layer shows an ultralow RESET power consumption, down to 381 fJ, and an ultrafast SET speed (8 ns). Much higher current density near NCC in the phase change layer and thermal barrier effect of insulating matrix material were confirmed by finite element analysis (FEA), and the role of Au nanochannels was revealed by transmission electron microscopy (TEM). Our NCC layer structure provides a simple and practicable method to significantly decrease PCM power consumption.

Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties

Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron-phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.

Recent advances in flexible memristors for advanced computing and sensing

Conventional computing systems based on von Neumann architecture face challenges such as high power consumption and limited data processing capability. Improving device performance via scaling guided by Moore's Law becomes increasingly difficult. Emerging memristors can provide a promising solution for achieving high-performance computing systems with low power consumption. In particular, the development of flexible memristors is an important topic for wearable electronics, which can lead to intelligent systems in daily life with high computing capacity and efficiency. Here, recent advances in flexible memristors are reviewed, from operating mechanisms and typical materials to representative applications. Potential directions and challenges for future study in this area are also discussed.

Resistance behavior of Sb7Se3 thin films based on flexible mica substrate

In this paper, we explored the resistivity behavior of Sb7Se3 thin films on flexible mica. The films maintained their resistance characteristics through various thicknesses and bending cycles. With increasing bends, resistivity and phase transition temperature of both amorphous and crystalline states rose, while the resistance drift coefficient gradually increased. Raman and near infrared experiments confirmed the internal structural changes and bandgap enhancement after bending. Transmission electron microscopy showed enhanced crystallization and uniform element distribution after annealing. Atomic force microscopy observed cracks, explaining the property changes. Additionally, we developed a flexible Sb7Se3 thin-film resistive device with swift reversibility (∼10 ns) regardless of bending, opening new avenues for flexible information storage.

Phase-change memory via a phase-changeable self-confined nano-filament

Phase-change memory (PCM) has been considered a promising candidate for solving von Neumann bottlenecks owing to its low latency, non-volatile memory property and high integration density1,2. However, PCMs usually require a large current for the reset process by melting the phase-change material into an amorphous phase, which deteriorates the energy efficiency2-5. Various studies have been conducted to reduce the operation current by minimizing the device dimensions, but this increases the fabrication cost while the reduction of the reset current is limited6,7. Here we show a device for reducing the reset current of a PCM by forming a phase-changeable SiTex nano-filament. Without sacrificing the fabrication cost, the developed nano-filament PCM achieves an ultra-low reset current (approximately 10 μA), which is about one to two orders of magnitude smaller than that of highly scaled conventional PCMs. The device maintains favourable memory characteristics such as a large on/off ratio, fast speed, small variations and multilevel memory properties. Our finding is an important step towards developing novel computing paradigms for neuromorphic computing systems, edge processors, in-memory computing systems and even for conventional memory applications.

High-Throughput Study of Amorphous Stability and Optical Properties of Superlattice-Like Ge-Sb-Te Thin Films

A high-throughput ion beam sputtering system is used to synthesize compositional gradient superlattice-like (SLL) thin film libraries of Ge-Sb-Te alloys over the entire phase diagram. The optical properties and structural evolution of the Ge-Sb-Te combinatorial SLL thin film are investigated. A systematic screening over the annealing temperature, annealing time, and modulation period has elucidated the critical factors that affect the stability of the metastable phase and optical properties. It is found that amorphous stability and optical constant are highly dependent on the modulation period and chemical composition of the thin film. This data-driven approach offers new perspectives for accelerating the development of new materials with excellent optical and amorphous stability and for exploring their mechanisms, by greatly expanding the dataset of Ge-Sb-Te alloys with SLL structures through high-throughput experiments.

Silicon-Compatible Ferroelectric Tunnel Junctions with a SiO2/Hf0.5Zr0.5O2 Composite Barrier as Low-Voltage and Ultra-High-Speed Memristors

The big data era requires ultrafast, low-power, and silicon-compatible materials and devices for information storage and processing. Here, ferroelectric tunnel junctions (FTJs) based on SiO2/Hf0.5Zr0.5O2 composite barrier and both conducting electrodes are designed and fabricated on Si substrates. The FTJ achieves the fastest write speed of 500 ps under 5 V (2 orders of magnitude faster than reported silicon-compatible FTJs) or 10 ns speed at a low voltage of 1.5 V (the lowest voltage among FTJs at similar speeds), low write current density of 1.3 × 104 A cm-2, 8 discrete states, good retention > 105 s at 85 °C, and endurance > 107. In addition, it provides a large read current (88 A cm-2) at 0.1 V, 2 orders of magnitude larger than reported FTJs. Interestingly, in FTJ-based synapses, gradually tunable conductance states (128 states) with high linearity (<1) are obtained by 10 ns pulses of <1.2 V, and a high accuracy of 91.8% in recognizing fashion product images is achieved by online neural network simulations. These results highlight that silicon-compatible HfO2-based FTJs are promising for high-performance nonvolatile memories and electrical synapses.

Binder-Free MOF-Based and MOF-Derived Nanoarrays for Flexible Electrochemical Energy Storage: Progress and Perspectives

The fast development of Internet of Things and the rapid advent of next-generation versatile wearable electronics require cost-effective and highly-efficient electroactive materials for flexible electrochemical energy storage devices. Among various electroactive materials, binder-free nanostructured arrays have attracted widespread attention. Featured with growing on a conductive and flexible substrate without using inactive and insulating binders, binder-free 3D nanoarray electrodes facilitate fast electron/ion transportation and rapid reaction kinetics with more exposed active sites, maintain structure integrity of electrodes even under bending or twisted conditions, readily release generated joule heat during charge/discharge cycles and achieve enhanced gravimetric capacity of the whole device. Binder-free metal-organic framework (MOF) nanoarrays and/or MOF-derived nanoarrays with high surface area and unique porous structure have emerged with great potential in energy storage field and been extensively exploited in recent years. In this review, common substrates used for binder-free nanoarrays are compared and discussed. Various MOF-based and MOF-derived nanoarrays, including metal oxides, sulfides, selenides, nitrides, phosphides and nitrogen-doped carbons, are surveyed and their electrochemical performance along with their applications in flexible energy storage are analyzed and overviewed. In addition, key technical issues and outlooks on future development of MOF-based and MOF-derived nanoarrays toward flexible energy storage are also offered.

Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance

High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Data-centric applications are pushing the limits of energy-efficiency in today's computing systems, including those based on phase-change memory (PCM). This technology must achieve low-power and stable operation at nanoscale dimensions to succeed in high-density memory arrays. Here we use a novel combination of phase-change material superlattices and nanocomposites (based on Ge4Sb6Te7), to achieve record-low power density ≈ 5 MW/cm2 and ≈ 0.7 V switching voltage (compatible with modern logic processors) in PCM devices with the smallest dimensions to date (≈ 40 nm) for a superlattice technology on a CMOS-compatible substrate. These devices also simultaneously exhibit low resistance drift with 8 resistance states, good endurance (≈ 2 × 108 cycles), and fast switching (≈ 40 ns). The efficient switching is enabled by strong heat confinement within the superlattice materials and the nanoscale device dimensions. The microstructural properties of the Ge4Sb6Te7 nanocomposite and its high crystallization temperature ensure the fast-switching speed and stability in our superlattice PCM devices. These results re-establish PCM technology as one of the frontrunners for energy-efficient data storage and computing.

Phase-Change Memory from Molecular Tellurides

Phase-change memory (PCM) is an emerging memory technology based on the resistance contrast between the crystalline and amorphous states of a material. Further development and realization of PCM as a mainstream memory technology rely on innovative materials and inexpensive fabrication methods. Here, we propose a generalizable and scalable solution-processing approach to synthesize phase-change telluride inks in order to meet demands for high-throughput material screening, increased energy efficiency, and advanced device architectures. Bulk tellurides, such as Sb2Te3, GeTe, Sc2Te3, and TiTe2, are dissolved and purified to obtain inks of molecular metal telluride complexes. This allowed us to unlock a wide range of solution-processed ternary tellurides by the simple mixing of binary inks. We demonstrate accurate and quantitative composition control, including prototype materials (Ge-Sb-Te) and emerging rare-earth-metal telluride-doped materials (Sc-Sb-Te). Spin-coating and annealing convert ink formulations into high-quality, phase-pure telluride films with preferred orientation along the (00l) direction. Deposition engineering of liquid tellurides enables thickness-tunable films, infilling of nanoscale vias, and film preparation on flexible substrates. Finally, we demonstrate cyclable and non-volatile prototype memory devices, achieving performance indicators such as resistance contrast and low reset energy on par with state-of-the-art sputtered PCM layers.

Multistate structures in a hydrogen-bonded polycatenation non-covalent organic framework with diverse resistive switching behaviors

The inherent structural flexibility and reversibility of non-covalent organic frameworks have enabled them to exhibit switchable multistate structures under external stimuli, providing great potential in the field of resistive switching (RS), but not well explored yet. Herein, we report the 0D+1D hydrogen-bonded polycatenation non-covalent organic framework (HOF-FJU-52), exhibiting diverse and reversible RS behaviors with the high performance. Triggered by the external stimulus of electrical field E at room temperature, HOF-FJU-52 has excellent resistive random-access memory (RRAM) behaviors, comparable to the state-of-the-art materials. When cooling down below 200 K, it was transferred to write-once-read-many-times memory (WORM) behaviors. The two memory behaviors exhibit reversibility on a single crystal device through the temperature changes. The RS mechanism of this non-covalent organic framework has been deciphered at the atomic level by the detailed single-crystal X-ray diffraction analyses, demonstrating that the structural dual-flexibility both in the asymmetric hydrogen bonded dimers within the 0D loops and in the infinite π-π stacking column between the loops and chains contribute to reversible structure transformations between multi-states and thus to its dual RS behaviors.

Recent Progress on Phase Engineering of Nanomaterials

As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.

Designing a Multilayered Oxygen Barrier Structure to Tackle Oxidation Challenges in Phase-Change Memory for Improved Reliability

Phase-change memory (PCM) is considered one of the most promising candidates for universal memory. However, during the manufacturing process of PCM, phase-change materials (PCMs) encounter severe oxidation, which can cause degraded performance and reduced stability of PCM, hindering its industrialization process. In this work, a multilayered oxygen barrier (MOB) structure is proposed to tackle this challenge. Material characterization shows that the MOB structure can significantly reduce the extent of oxidation of PCMs from around 70% to as low as around 10%, achieving a remarkably low level of oxidation. Moreover, the material in the MOB structure exhibits notable enhancements in crystallization temperature and cycling capability. The improved stability is attributed to the oxygen barrier effect and the suppression of elemental segregation within the material, which are both conferred by the MOB structure. In summary, this work provides an effective solution to address the oxidation of PCMs, offering valuable guidance for realizing a high-reliability PCM in practical production.

0D van der Waals interfacial ferroelectricity

The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.

Microstructure characterization, phase transition, and device application of phase-change memory materials

Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.

Silk fibroin based wearable electrochemical sensors with biomimetic enzyme-like activity constructed for durable and on-site health monitoring

Flexible biomimetic sensors have encountered a bottleneck of sensitivity and durability, as the sensors must directly work within complex body fluid with ultra-trace biomarkers. In this work, a wearable electrochemical sensor on a modified silk fibroin substrate is developed using gold nanoparticles hosted into N-doped porous carbonizated silk fibroin (AuNPs@CSF) as active materials. Taking advantage of the inherent biocompatibility and flexibility of CSF, and the high stability and enzyme-like catalytic activity of AuNPs, AuNPs@CSF-based sensor exhibits durable stability and superior sensitivity to monitor H₂O₂ released from cancer cell (4T1) and glucose in sweat. The detection limits for H₂O₂ and glucose are low to be 1.88 μM and 23 μM respectively, and the sensor can be applied in succession within 30 days at room temperature. Further, physical cross-linking of polyurethane (PU) with SF well matches with the skin tissue mechanically and provides a flexible, robust and stable electrode-tissue interface. AuNPs@CSF is applied successfully for wearable electrochemical monitoring of glucose in human sweat.The present AuNPs@CSF will possess a potential application in clinical diagnosing of H₂O₂- or glucose-related diseases in future.

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Phase-change superlattices with nanometer thin sublayers are promising for low-power phase-change memory (PCM) on rigid and flexible platforms. However, the thermodynamics of the phase transition in such nanoscale superlattices remain unexplored, especially at ultrafast scanning rates, which is crucial for our fundamental understanding of superlattice-based PCM. Here, we probe the phase transition of Sb₂Te₃ (ST)/Ge₂Sb₂Te₅ (GST) superlattices using nanocalorimetry with a monolayer sensitivity (∼1 Å) and a fast scanning rate (10⁵ K/s). For a 2/1.8 nm/nm Sb₂Te₃/GST superlattice, we observe an endothermic melting transition with an ∼240 °C decrease in temperature and an ∼8-fold decrease in enthalpy compared to those for the melting of GST, providing key thermodynamic insights into the low-power switching of superlattice-based PCM. Nanocalorimetry measurements for Sb₂Te₃ alone demonstrate an intrinsic premelting similar to the unique phase transition of superlattices, thus revealing a critical role of the Sb₂Te₃ sublayer within our superlattices. These results advance our understanding of superlattices for energy-efficient data storage and computing.

Technology Roadmap for Flexible Sensors

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.

In Situ Polymerized 1,3-Dioxolane Electrolyte for Integrated Solid-State Lithium Batteries

Solid-state lithium batteries are promising and safe energy storage devices for mobile electronics and electric vehicles. In this work, we report a facile in situ polymerization of 1,3-dioxolane electrolytes to fabricate integrated solid-state lithium batteries. The in situ polymerization and formation of solid-state dioxolane electrolytes on interconnected carbon nanotubes (CNTs) and active materials is the key to realizing a high-performance battery with excellent interfacial contact among CNTs, active materials and electrolytes. Therefore, the electrodes could be tightly integrated into batteries through the CNTs and electrolyte. Electrons/ions enable full access to active materials in the whole electrode. Electrodes with a low resistance of 4.5 Ω □^-1 and high lithium-ion diffusion efficiency of 2.5×10^-11  cm²  s^-1 can significantly improve the electrochemical kinetics. Subsequently, the batteries demonstrated high energy density, amazing charge/discharge rate and long cycle life.

Resistive Switching Crossbar Arrays Based on Layered Materials

Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>10⁸  devices mm^{- 2} ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm² ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.

Energy Efficient Neuro-Inspired Phase-Change Memory Based on Ge4 Sb6 Te7 as a Novel Epitaxial Nanocomposite

Phase-change memory (PCM) is a promising candidate for neuro-inspired, data-intensive artificial intelligence applications, which relies on the physical attributes of PCM materials including gradual change of resistance states and multilevel operation with low resistance drift. However, achieving these attributes simultaneously remains a fundamental challenge for PCM materials such as Ge₂ Sb₂ Te₅ , the most commonly used material. Here bi-directional gradual resistance changes with ≈10× resistance window using low energy pulses are demonstrated in nanoscale PCM devices based on Ge₄ Sb₆ Te₇ , a new phase-change nanocomposite material . These devices show 13 resistance levels with low resistance drift for the first 8 levels, a resistance on/off ratio of ≈1000, and low variability. These attributes are enabled by the unique microstructural and electro-thermal properties of Ge₄ Sb₆ Te₇ , a nanocomposite consisting of epitaxial SbTe nanoclusters within the Ge-Sb-Te matrix, and a higher crystallization but lower melting temperature than Ge₂ Sb₂ Te₅ . These results advance the pathway toward energy-efficient analog computing using PCM.

Conversion between Metavalent and Covalent Bond in Metastable Superlattices Composed of 2D and 3D Sublayers

Reversible conversion over multimillion times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, an extended category of crystal structures from stable states via redistribution of vacancies, research on kinetic behavior of the vacancies is highly in demand. However, it remains lacking due to difficulties with experimental analysis. Herein, the direct observation of the evolution of chemical states of vacancies clarifies the behavior by combining analysis on charge density distribution, electrical conductivity, and crystal structures. Site-switching of vacancies of Sb₂Te₃ gradually occurs with diverged energy barriers owing to their own activation code: the accumulation of vacancies triggers spontaneous gliding along atomic planes to relieve electrostatic repulsion. Studies on the behavior can be further applied to multiphase superlattices composed of Sb₂Te₃ (2D) and GeTe (3D) sublayers, which represent superior memory performances, but their operating mechanisms were still under debate due to their complexity. The site-switching is favorable (suppressed) when Te-Te bonds are formed as physisorption (chemisorption) over the interface between Sb₂Te₃ (2D) and GeTe (3D) sublayers driven by configurational entropic gain (electrostatic enthalpic loss). Depending on the type of interfaces between sublayers, phases of the superlattices are classified into metastable and stable states, where the conversion could only be achieved in the metastable state. From this comprehensive understanding on the operating mechanism via kinetic behaviors of vacancies and the metastability, further studies toward vacancy engineering are expected in versatile materials.

Atomic Layer Deposition of Sb2 Te3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

Atomic layer deposition (ALD) of Sb₂ Te₃ /GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO₂ insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb₂ Te₃ enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge₂ Sb₂ Te₅ alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge₂ Sb₂ Te₅ alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.

Ultra-Stable, Endurable, and Flexible Sb2TexSe3-x Phase Change Devices for Memory Application and Wearable Electronics

Flexible memory and wearable electronics represent an emerging technology, thanks to their reliability, compatibility, and superior performance. Here, an Sb₂Te_xSe_3-x (STSe) phase change material was grown on flexible mica, which not only exhibited superior nature in thermal stability for phase change memory application but also revealed novel function performance in wearable electronics, thanks to its excellent mechanical reliability and endurance. The thermal stability of Sb₂Te₃ was improved obviously with the crystallization temperature elevated 60 K after Se doping, for the enhanced charge localization and stronger bonding energy, which was validated by the Vienna ab initio simulation package calculations. Based on the ultra-stability of STSe, the STSe-based phase change memory shows 65 000 reversible phase change ability. Moreover, the assembled flexible device can show real-time monitoring and recoverability response in sensing human activities in different parts of the body, which proves its effective reusability and potential as wearable electronics. Most importantly, the STSe device presents remarkable working reliability, reflected by excellent endurance over 100 s and long retention over 100 h. These results paved a novel way to utilize STSe phase change materials for flexible memory and wearable electronics with extreme thermal and mechanical stability and brilliant performance.

Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device

Data recording based on the phase transition between amorphous and crystalline phases in a phase-change material (PCM) generally consumes a large amount of operation energy. Heat confinement and scaling down of the contact area between the PCM and electrode are effective strategies for reducing the operation energy in the memory device. Contrary to conventional PCM, such as Ge-Sb-Te compounds (GST), Cr₂Ge₂Te₆ (CrGT) exhibits low thermal conductivity and low-energy memory operation characteristics even in a relatively large contact area. Herein, we show that the operation energy of the CrGT-based memory device is greatly reduced by scaling down. Based on the present results, an operation energy at subpico J order, which was achieved using carbon nanotubes or graphene nanoribbon in the GST-based device, can be realized in the contact area comparable to the product level in the CrGT-based device. The numerical simulation suggests that small thermal and electrical conductivities enhance the thermal efficiency, resulting in a small operation energy for amorphization. It was also found that the residual metastable phase after the amorphization process increased the operation energy for crystallization by the simulation. In other words, these results indicate that further small operation energy can be realized in the CrGT-based device by reducing the metastable phase volume.

High-Performance Flexible Polymer Memristor Based on Stable Filamentary Switching

Polymer-based atomic switch memristors via the formation/dissolution of atomic-scale conductive filaments are considered as the leading candidate for next-generation nonvolatile memory. However, the instability of conductive filaments of incomplete bridge makes their switching performances unsatisfied. In this work, we report a flexible polymeric memristor using polyethylenimine incorporated with silver salt. The memristor device exhibited superior performances at room temperature with a favorable endurance, high ON/OFF ratio, good retention, and low operating voltage. These satisfactory performances are attributed to the pre-existing Ag ions in the polymer, guiding the formation of a robust Ag filament. In addition, the device shows stable bipolar switching behavior in bending conditions or after hundreds of bending cycles. In our work, we provide a simple and efficient method to construct robust filament-based memristors for flexible electronics.

Electrical bistability based on metal-organic frameworks

Electrical bistability existing in biochemical networks is critical for the proper functionalization of living systems. The development of artificial materials with electrical bistability begun to attract much interest due to their broad application prospects, especially in the field of memristors. Metal-organic frameworks (MOFs) have advantages in regular pores, crystallinity, structural designability and easy functionalization, which can promote the construction of novel MOF-based memristors and facilitate a better understanding of switching mechanisms. Here, we highlight recent advances in electrically bistable MOFs as memristors, and discuss their switching mechanisms, including interfacial reaction, proton-transfer mechanism, metal ion migration, charge trapping/detrapping and other mechanisms. Challenges and future perspectives are also presented.

Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance

Superlattice (SL) phase change materials have shown promise to reduce the switching current and resistance drift of phase change memory (PCM). However, the effects of internal SL interfaces and intermixing on PCM performance remain unexplored, although these are essential to understand and ensure reliable memory operation. Here, using nanometer-thin layers of Ge₂Sb₂Te₅ and Sb₂Te₃ in SL-PCM, we uncover that both switching current density (J_reset) and resistance drift coefficient (v) decrease as the SL period thickness is reduced (i.e., higher interface density); however, interface intermixing within the SL increases both. The signatures of distinct versus intermixed interfaces also show up in transmission electron microscopy, X-ray diffraction, and thermal conductivity measurements of our SL films. Combining the lessons learned, we simultaneously achieve low J_reset ≈ 3-4 MA/cm² and ultralow v ≈ 0.002 in mushroom-cell SL-PCM with ∼110 nm bottom contact diameter, thus advancing SL-PCM technology for high-density storage and neuromorphic applications.

Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters

Silicon photonics is evolving from laboratory research to real-world applications with the potential to transform many technologies, including optical neural networks and quantum information processing. A key element for these applications is a reconfigurable switch operating at ultra-low programming energy-a challenging proposition for traditional thermo-optic or free carrier switches. Recent advances in non-volatile programmable silicon photonics based on phase-change materials (PCMs) provide an attractive solution to energy-efficient photonic switches with zero static power, but the programming energy density remains high (hundreds of attojoules per cubic nanometre). Here we demonstrate a non-volatile electrically reconfigurable silicon photonic platform leveraging a monolayer graphene heater with high energy efficiency and endurance. In particular, we show a broadband switch based on the technologically mature PCM Ge₂Sb₂Te₅ and a phase shifter employing the emerging low-loss PCM Sb₂Se₃. The graphene-assisted photonic switches exhibited an endurance of over 1,000 cycles and a programming energy density of 8.7 ± 1.4 aJ nm^-3, that is, within an order of magnitude of the PCM thermodynamic switching energy limit (~1.2 aJ nm^-3) and at least a 20-fold reduction in switching energy compared with the state of the art. Our work shows that graphene is a reliable and energy-efficient heater compatible with dielectric platforms, including Si₃N₄, for technologically relevant non-volatile programmable silicon photonics.

Optical and optoelectronic neuromorphic devices based on emerging memory technologies

As artificial intelligence continues its rapid development, inevitable challenges arise for the mainstream computing hardware to process voluminous data (Big data). The conventional computer system based on von Neumann architecture with separated processor unit and memory is approaching the limit of computational speed and energy efficiency. Thus, novel computing architectures such as in-memory computing and neuromorphic computing based on emerging memory technologies have been proposed. In recent years, light is incorporated into computational devices, beyond the data transmission in traditional optical communications, due to its innate superiority in speed, bandwidth, energy efficiency, etc. Thereinto, photo-assisted and photoelectrical synapses are developed for neuromorphic computing. Additionally, both the storage and readout processes can be implemented in optical domain in some emerging photonic devices to leverage unique properties of photonics. In this review, we introduce typical photonic neuromorphic devices rooted from emerging memory technologies together with corresponding operational mechanisms. In the end, the advantages and limitations of these devices originated from different modulation means are listed and discussed.

Optically Encodable and Erasable Multilevel Nonvolatile Flexible Memory Device Based on Metal-Organic Frameworks

Multilevel and flexible nonvolatile memory (NVM) is a promising candidate for data storage in next-generation devices but its high bias and low mobility of conducting channels are often its drawbacks. In this study, we demonstrate a low bias of smaller than 0.1 V and a high-mobility graphene layer as a conducting channel for flexible optoelectronic NVM based on a composite thin film of indium-based MOF-derived InCl₃ and 4,4-oxydiphthalic anhydride (odpta), Na[In₃(odpt)₂(OH)₂(H₂O)₂](H₂O)₄, and reduced graphene oxide (rGO). The optoelectronic NVM device can be encoded and erased optically by ultraviolet (UV) light and visible light, respectively. Our device also achieves memory states over 192 (6-bit storage) distinct levels, which can emerge as mass data storage. It also shows an excellent endurance of write-erase cycles under irradiation with a laser of varying wavelengths, the mechanical stability of more than 1000 bending cycles, and stable retention for longer than 10 000 s. These results open an alternative route for developing low bias and innovative optoelectronic technologies.

Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide

The morphological, structural, and electrical properties of as-grown and annealed Ge₂Sb₂Te₅ (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electrical characterization. The X-ray diffraction annealing experiments showed the structural transformation of GST layers from the as-grown amorphous state into their crystalline cubic and trigonal phases. The onset of crystallization of the GST films was inferred at about 140 °C. The vibrational properties of the crystalline GST layers were investigated via Raman spectroscopy with mode assignment in agreement with previous works on GST films grown on rigid substrates. The electrical characterization revealed a good homogeneity of the amorphous and crystalline trigonal GST with an electrical resistance contrast of 8 × 10⁶.

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non-von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.

Simultaneous emulation of synaptic and intrinsic plasticity using a memristive synapse

Neuromorphic computing targets the hardware embodiment of neural network, and device implementation of individual neuron and synapse has attracted considerable attention. The emulation of synaptic plasticity has shown promising results after the advent of memristors. However, neuronal intrinsic plasticity, which involves in learning process through interactions with synaptic plasticity, has been rarely demonstrated. Synaptic and intrinsic plasticity occur concomitantly in learning process, suggesting the need of the simultaneous implementation. Here, we report a neurosynaptic device that mimics synaptic and intrinsic plasticity concomitantly in a single cell. Threshold switch and phase change memory are merged in threshold switch-phase change memory device. Neuronal intrinsic plasticity is demonstrated based on bottom threshold switch layer, which resembles the modulation of firing frequency in biological neuron. Synaptic plasticity is also introduced through the nonvolatile switching of top phase change layer. Intrinsic and synaptic plasticity are simultaneously emulated in a single cell to establish the positive feedback between them. A positive feedback learning loop which mimics the retraining process in biological system is implemented in threshold switch-phase change memory array for accelerated training.

Synaptic plasticity and neuronal intrinsic plasticity are both involved in the learning process of hardware artificial neural network. Here, Lee et al. integrate a threshold switch and a phase change memory in a single device, which emulates biological synaptic and intrinsic plasticity simultaneously.

Nanofiber Architecture Engineering Implemented by Electrophoretic-Induced Self-Assembly Deposition Technology for Flash-Type Memristors

Electrophoretic deposition (EPD) has been recognized as a promising large-scale film preparation technology for industrial application. Inspired by the conventional EPD method and the crystal diffusion growth strategy, we propose a modified electrophoretic-induced self-assembly deposition (EPAD) technique to control the morphologies of organic functional materials. Here, an ionic-type dye with a conjugated skeleton and strong noncovalent interactions, celestine blue (CB), is chosen as a module molecule for EPAD investigation. As expected, CB molecules can assemble into different nanostructures, dominated by applied voltage, concentration effect, and duration. Compared to a nanopillar layered packing structure formed by the traditional spin-coating method, the EPAD approach can produce a nanofiber structure under a fixed condition of 10 V/10 min. Intriguingly, a memristor device based on a pillar-like nanostructure exhibits WORM-type behavior, while a device based on nanofibers presents Flash memory performance. The assemble process and the memory mechanism are uncovered by molecular dynamics simulations and density-functional theory (DFT) calculations. This work endows the typical EPD technique with a fresh application scenario, where an in-depth study on the growth mechanism of nanofibers and the positive effect of unique morphologies on memristor performance are offered.

Application of Ge2Sb2Te5 phase change film in flexible memory

The development of high-performance flexible memory is of great significance to today's rapidly growing Internet of Things market. In this paper, Ge2Sb2Te5 phase change films were prepared by magnetron sputtering...

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation

Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) enter the global memory market as storage-class memory (SCM), holding great promise for future neuro-inspired computing and non-volatile photonic applications. The thermal stability of the amorphous phase of PCMs is a demanding property requiring further improvement. In this work, we focus on indium, an alloying ingredient extensively exploited in PCMs. Starting from the prototype GeTe alloy, we incorporated indium to form three typical compositions along the InTe-GeTe tie line: InGe3Te4, InGeTe2 and In3GeTe4. The evolution of structural details, and the optical properties of the three In-Ge-Te alloys in amorphous and crystalline form, was thoroughly analyzed via ab initio calculations. This study proposes a chemical composition possessing both improved thermal stability and sizable optical contrast for PCM-based non-volatile photonic applications.