Phase-matching and femtosecond difference-frequency generation in the quaternary semiconductor AgGaGe5Se12

Frequency down-conversion based on optical cascading process-New effective way for generation of far infrared or THz radiation

Infrared and THz optics has many promising practical applications such as in spectroscopy, diagnostic, optical metrology, sensing, and many others. Due to limited number of IR radiation sources, the frequency down-conversion processes are widely used for obtaining infrared radiation. Among them, the most applicable method is a generation of wave with difference frequency under the three-waves interaction in a medium with quadratic nonlinear response. Below we propose a new effective tool for three times decreasing frequency of the incident pulse based on three-waves interaction in a medium with the quadratic susceptibility. At such interaction, a medium's response inherent cubic non-linearity appears due to so-called cascading SHG. The frequency down-conversion process possesses two stable modes. This is shown using multi-scale method. For each of the modes, the analytical solution is developed in the framework of the long pulse duration approximation without using the pump energy non-depletion approximation. The computer simulation results confirm those of analytical analysis. We show that the conversion efficiency of the incidentpump pulse energy achieves about 70%, if the low frequency wave incident intensity equals zero, or almost 100%, if the incident intensity of the low frequency wave is non-zero. The developed theoretical approach may be applied to other processes of the frequency down-conversion.

AgGaGeSe4: An Infrared Nonlinear Quaternary Selenide with Good Performance

The symmetry of crystals is an extremely important property of crystals. Crystals can be divided into centrosymmetric and non-centrosymmetric crystals. In this paper, an infrared (IR) nonlinear optical (NLO) material AgGaGeSe4 was synthesized. The related performance analysis, nonlinear optical properties, and first-principle calculation of AgGaGeSe4 were also introduced in detail. In the AgGaGeSe4 structure, Ge4+ was replaced with Ga3+ and produced the same number of vacancies at the Ag+ position. The low content of Ge doping kept the original chalcopyrite structure and improved its optical properties such as the band gap. The UV-Vis diffuse reflection spectrum shows that the experimental energy band gap of AgGaGeSe4 is 2.27 eV, which is 0.48 eV larger than that of AgGaSe2 (1.79 eV). From the perspective of charge-transfer engineering strategy, the introduction of Group IV Ge elements into the crystal structure of AgGaSe2 effectively improves its band gap. The second harmonic generation (SHG) effect of AgGaGeSe4 is similar to that of AgGaSe2, and at 1064 nm wavelength, the birefringence of AgGaGeSe4 is 0.03, which is greater than that of AgGaSe2 (∆n = 0.02). The results show that AgGaGeSe4 possessed better optical properties than AgGaSe2, and can been broadly applied as a good infrared NLO material.

Investigation of the Anisotropic Thermal Expansion Mechanism of AgxGaxGe1-xSe2 Crystals

Quaternary nonlinear optical single crystals Ag_xGa_xGe_1-xSe₂ (x = 0.250, 0.167) were grown by the Bridgman method in a four-zone furnace. The thermal expansion behavior of Ag_xGa_xGe_1-xSe₂ (x = 0.25, 0.167) was studied by the method of single-crystal X-ray diffraction from 150 to 295 K and powder X-ray diffraction in the range of 298-773 K. Both results show the crystals have positive linear thermal expansion coefficients in different directions and a positive volume thermal expansion coefficient, and it is observed that they satisfy the relationship of α_a > α_c > α_b and α_V ≈ α_a + α_b + α_c for the orthorhombic structure. It is found that the Ag_xGa_xGe_1-xSe₂ (x = 0.25, 0.167) unit cells varying with temperature were mainly dominated by variations in framework geometry (AgSe₄ tetrahedron), and the thermal motion of Ag atoms in the AgSe₄ tetrahedron. As it was revealed, according to the powder X-ray diffraction, it is found that the isotropic thermal atomic displacement parameter of the Ag atoms is much larger than those of the Se and Ga(Ge) atoms in the AgSe₄ tetrahedron. Furthermore, anisotropic atomic displacement parameters (ADPs) of Ag atoms are extracted from the single-crystal diffraction; the ADPs along the a axis, b axis, and c axis have a significant difference, which means the thermal vibration of Ag atoms is anisotropic. It is of great significance for improving crystal growth technology and understanding the thermal properties of this kind of crystals.

The Investigation on Mid-Far Infrared Nonlinear Crystal AgGaGe5Se12 (AGGSe)

3–5, 8–14 μm mid-far infrared (MF-IR) coherent lights generated by nonlinear optical (NLO) crystals are crucial for many industrial and military applications. AgGaGe5Se12 (AGGSe) is a promising NLO candidate because of its good optical performance. In this paper, the large AGGSe single crystal of 35 mm diameter and 80 mm length was obtained by the seed-aided Bridgman method. The crystalline quality was characterized with X-ray diffraction, rocking curve, transmission spectrum. The FWHM of the (210) peak was about 0.05° and the IR transmission was about 60% (1–10 μm, 6 mm thick). Additionally, it performed well in 8 μm frequency doubling, with a maximum output power of about 41 mW, corresponding to an optical-to-optical conversion efficiency of 3.2%. The laser induced damage threshold (LIDT) value was about 200 MW/cm2 (1.06 μm, 20 ns, 1 Hz).

Broadband second-harmonic and sum-frequency generation with a long-wave infrared laser in AgGaGe5Se12

Using an 8 µm long-wave infrared laser as the fundamental wave, we achieved second-harmonic generation (SHG) and sum-frequency generation simultaneously in AgGaGe₅Se₁₂ and obtained a 4 µm laser output. Among them, SHG was achieved in the 173 nm spectral range of the fundamental wave, which was consistent with theoretical calculations. The average power of the obtained 4 µm laser was 41 mW, corresponding to an optical-to-optical conversion efficiency of 3.2%. The measured temperature acceptance bandwidth (LδT) (FWHM) was 50 K·cm; the angular acceptance bandwidth (Lδθ) (FWHM) was 13.3 mrad·cm; and the average absorption coefficient in the wavelength range of 0.86-11.30 µm was 0.07cm^-1. In addition, the spectral acceptance bandwidth (Lδλ) of fundamental wave in AgGaGe₅Se₁₂ SHG and the spectral gain bandwidth of frequency downconversion in AgGaGe₅Se₁₂ were calculated. In view of the small absorption coefficient, the large temperature acceptance bandwidth, and the large spectral gain bandwidth, we conclude that AgGaGe₅Se₁₂ is a suitable nonlinear crystal for high-power short/mid/long-wave infrared lasers and frequency conversions of nanosecond-femtosecond infrared lasers. These results are conducive to the further development of AgGaGe₅Se₁₂ lasers.

Synthesis and structure of novel Ag2Ga2SiSe6 crystals: promising materials for dynamic holographic image recording

Phase diagrams of the AgGaSe₂–SiSe₂ system were explored by differential thermal analysis (DTA) and X-ray diffraction (XRD) analysis methods for the first time.