Power-efficient III-V/silicon external cavity DBR lasers

High-Q asymmetrically cladded silicon nitride 1D photonic crystals cavities and hybrid external cavity lasers for sensing in air and liquids

In this paper we show a novel design of high Q-factor silicon nitride (SiN) 1D photonic crystal (PhC) cavities side-coupled to curved waveguides, operating with both silica and air cladding. The engineering of the etched 1D PhC cavity sidewalls angle allows for high Q-factors over a wide range of upper cladding compositions, and the achievement of the highest calculated Q-factor for non-suspended asymmetric SiN PhC structures. We show the employment of these type of SiN PhC cavities in hybrid external cavity laser (HECL) configuration, with mode-hop free single mode laser operation over a broad range of injected currents (from 25 mA to 65 mA), milliwatts of power output (up to 9 mW) and side-mode suppression ratios in the range of 40 dB. We demonstrate the operation of these devices as compact and energy efficient optical sensors that respond to refractive index changes in the surrounding medium the measurement of sodium chloride (from 0% to 25%) and sucrose (from 0% to 25%) in aqueous solution. In HECL configuration, the RI sensor exhibits a 2 orders of magnitude improvement in detection limit compared to the passive microcavity. We also discuss the possibility for applying these devices as novel transducers for refractive index changes that are induced by analyte specific absorption of infrared radiation by the target analytes present in gas or liquid phase.

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides

The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functionality, with the most obvious feature being the increased need for wavelength versatility. To this end, we demonstrate for the first time the flip-chip integration of a GaSb semiconductor optical amplifier with a silicon photonic circuit, addressing the transition of photonic integration technology towards mid-IR wavelengths. In particular, an on-chip hybrid DBR laser emitting in the 2 µm region with an output power of 6 mW at room temperature is demonstrated. Wavelength locking was achieved employing a grating realized using 3 µm thick silicon-on-insulator (SOI) technology. The SOI waveguides exhibit strong mode confinement and low losses, as well as excellent mode matching with GaSb optoelectronic chips ensuring low loss coupling. These narrow line-width laser diodes with an on-chip extended cavity can generate a continuous-wave output power of more than 1 mW even when operated at an elevated temperature of 45°C. The demonstration opens an attractive perspective for the on-chip silicon photonics integration of GaSb gain chips, enabling the development of PICs in a broad spectral range extending from 1.8 µm to beyond 3 µm.

Mode selection in InGaAs/InGaAsP quantum well photonic crystal lasers based on coupled double-heterostructure cavities

Photonic crystal lasers with a high-Q factor and small mode volume are ideal light sources for on-chip nano-photonic integration. Due to the submicron size of their active region, it is usually difficult to achieve high output power and single-mode lasing at the same time. In this work, we demonstrate well-selected single-mode lasing in a line-defect photonic crystal cavity by coupling it to the high-Q modes of a short double-heterostructure photonic crystal cavity. One of the FP-like modes of the line-defect cavity can be selected to lase by thermo-optically tuning the high-Q mode of the short cavity into resonance. Six FP-like modes are successively tuned into lasing with side mode suppression ratios all exceeding 15 dB. Furthermore, we show a continuous wavelength tunability of about 10 nm from all the selected modes. The coupled cavity system provides a remarkable platform to explore the rich laser physics through the spatial modulation of vacuum electromagnetic field at submicron scale.

High linear polarization, narrow linewidth hybrid semiconductor laser with an external birefringence waveguide Bragg grating

We demonstrate a high linear polarization, narrow linewidth hybrid laser composed of a semiconductor gain chip and a high birefringence waveguide Bragg grating (WBG). The laser operates in the C-band, and a maximum output power of 8.07 mW is obtained in the fiber waveguide. With careful temperature tuning, the hybrid laser can operate in a single longitudinal mode state from above the threshold current to 410 mA. The side mode suppression ratio (SMSR) reaches a value of 50.2 dB, and the polarization extinction ratio exceeds 39.6 dB. We numerically analyze the linewidth suppression for the Bragg grating based on adiabatic chirp theory. The hybrid laser shows a narrow linewidth of 4.15 kHz and a low relative intensity noise (RIN) of <-155 dBc/Hz, providing a high-performance light source for coherent light communication.

III/V silicon hybrid laser based on a resonant Bragg structure

We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry-Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.

Hybrid External Cavity Laser with an Amorphous Silicon-Based Photonic Crystal Cavity Mirror

The authors present results on the performance of a hybrid external cavity photonic crystal laser-comprising semiconductor optical amplifier, and a 2D photonic crystal cavity fabricated in low-temperature amorphous silicon. The authors demonstrate that lithographic control over amorphous silicon photonic crystal cavity-resonant wavelengths is possible, and that single-mode lasing at optical telecommunications wavelengths is possible on an amorphous silicon platform.

Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration

We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the InP/GaAs-Si₃N₄ platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for both InP and GaAs gain chips at the same time. Single frequency lasing at 1.55 µm and 1 µm is simultaneously obtained on a single chip with spectral linewidths of 18-kHz and 70-kHz, a side mode suppression ratio of 52 dB and 46 dB, and tuning range of 46 nm and 38 nm, respectively. The resulting dual-band narrow-linewidth diode lasers have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics.

Thermally stable hybrid cavity laser based on silicon nitride gratings

In this paper, we show the experimental results of a thermally stable Si₃N₄ external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 μm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of Si₃N₄ Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15-62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances' thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si₃N₄ spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

Photonic bandpass filter characteristics of multimode SOI waveguides integrated with submicron gratings

It has been shown that a fundamental mode adiabatically launched into a multimode SOI waveguide with submicron grating offers well-defined flat-top bandpass filter characteristics in transmission. The transmitted spectral bandwidth is controlled by adjusting both waveguide and grating design parameters. The bandwidth is further narrowed down by cascading two gratings with detuned parameters. A semi-analytical model is used to analyze the filter characteristics (1500  nm≤λ≤1650  nm) of the device operating in transverse-electric polarization. The proposed devices were fabricated with an optimized set of design parameters in a SOI substrate with a device layer thickness of 250 nm. The pass bandwidth of waveguide devices integrated with single-stage gratings are measured to be ∼24  nm, whereas the device with two cascaded gratings with slightly detuned periods (ΔΛ=2  nm) exhibits a pass bandwidth down to ∼10  nm.

Loss induced coherent combining in InP-Si3N4 hybrid platform

Loss, as a time-reversed counterpart of gain, can also be used to control lasing in an optical system with coupled cavities. In this study, by manipulating mirror losses at different output ports of coupled Fabry-Perot cavities, an integrated coherently combined laser system is proposed and experimentally demonstrated in the InP-Si3N4 hybrid platform. Two InP-based reflective semiconductor amplifiers are coherently combined through an adiabatic 50:50 directional coupler in silicon nitride. The combining efficiency is ~92% at ~2× threshold. The novel system not only realizes the miniaturization of coherent laser beam combining but also provides a chip-scale platform to study the coherent coupling between coupled laser cavities.

Inclined emitting slotted single-mode laser with 1.7° vertical divergence angle for PIC applications

In this Letter, a new type of single-mode slotted laser used for an on-chip light source in photonic integrated circuits is proposed. An inclined light beam with a low vertical divergence angle can be directly coupled into the surface grating of the silicon to form an integrated light source. Experimentally, a III-V laser with a 54.6° inclined angle and a vertical divergence angle of 1.7° is achieved by introducing a kind of specially distributed microstructure. The side mode suppression ratio is better than 45 dB, and the continuous wave output power reaches 6.5 mW at room temperature. We report the inclined emitting microstructured single-mode laser with a low divergence angle for the first time, to the best of our knowledge.

Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array

We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.

Silicon micro-ring tunable laser for coherent optical communication

A compact external cavity tunable laser based on a silicon hybrid micro-ring resonator is demonstrated. A theoretical model is also employed for design and analysis of the wavelength tuning performance of the device. In this model, the gain section of the device is simulated by a conventional multimode rate equation model, whereas all rest passive sections are modeled by the frequency domain method. Experimental results have shown that the output power of this device can reach 29 mW, with a linewidth less than 150 kHz. The tuning range is more than 17 nm in C-band with 60 dB side-mode-suppression-ratio (SMSR). This device shows a comparable performance with the commercial narrow linewidth laser as the source in coherent transmission systems.

Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector

We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

An all-solid-state, WDM silicon photonic digital link for chip-to-chip communications

We describe a multiwavelength hybrid-integrated solid-state link on a 3 µm silicon-on-insulator (SOI) nanophotonic platform. The link spans three chips and employs germanium-silicon electroabsorption waveguide modulators, silicon transport waveguides, echelle gratings for multiplexing and demultiplexing, and pure germanium waveguide photo-detectors. The 8λ WDM Tx and Rx components are interconnected via a routing "bridge" chip using edge-coupled optical proximity communication. The packaged, retimed digital WDM link is demonstrated at 10 Gb/s and 10(-12) BER, with three wavelength channels consuming an on-chip power below 1.5 pJ/bit, excluding the external laser power.

Demonstration of 12.2% wall plug efficiency in uncooled single mode external-cavity tunable Si/III-V hybrid laser

A Si/III-V hybrid laser has been a highly sought after device for energy-efficient and cost-effective high-speed silicon photonics communication. We present a high wall-plug efficiency external-cavity hybrid laser created by integrating an independently optimized SOI ring reflector and a III-V gain chip. In our demonstration, the uncooled integrated laser achieved a waveguide-coupled wall-plug efficiency of 12.2% at room temperature with an optical output power of ~10 mW. The laser operated single-mode near 1550 nm with a linewidth of 0.22 pm. This is a tunable light source with 8 nm wavelength tuning range. A proof-of-concept laser wavelength stabilization technique has also been demonstrated. Using a simple feedback loop, we achieved mode-hop-free operation in a packaged external-cavity hybrid laser as bias current was varied by 60mA.

Extremely compact hybrid III-V/SOI lasers: design and fabrication approaches

In this manuscript we discuss state of the art hybrid integration techniques and III-V/Si active components with an emphasis on hybrid distributed feedback (DFB) lasers for telecom applications. We review our work on ultra-compact III-V/Si DFB lasers and further describe design considerations and challenges associated with electrically pumped hybrid lasers. We conclude with a perspective on DFB lasers with extremely small footprint, a direction for future research with potential applications to densely-packed optical interconnects.

Sagnac loop mirror and micro-ring based laser cavity for silicon-on-insulator

An integrated laser is a key component in silicon based photonic integrated circuits. Beyond incorporating the gain medium, on-chip cavity design is critical to device performance and yield. Typical recent results involve cavities utilizing distributed Bragg gratings that require ultra-fine feature sizes. We propose to build laser cavity on silicon using a Sagnac loop mirror and a micro-ring wavelength filter for the first time. The Sagnac loop mirror provides broadband reflection, which is simple to fabricate, has an accurately-controlled reflectivity, and negligible excess loss. Single-mode operation is achieved with the intra-cavity micro-ring filter and, using a 248 nm stepper, the laser wavelength can be lithographically controlled within a standard deviation of 3.6 nm. We demonstrate a proof-of-concept device lasing at 1551.7 nm, with 44 dB SMSR, 1.2 MHz linewidth and 4.8 mW on-chip output power.

High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links

A highly efficient silicon (Si) hybrid external cavity laser with a wavelength tunable ring reflector is fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible Si-on-insulator (SOI) platform and experimental results with high output power are demonstrated. A III-V semiconductor gain chip is edge-coupled into a SOI cavity chip through a SiN(x) spot size converter and Si grating couplers are incorporated to enable wafer-scale characterization. The laser output power reaches 20 mW and the highest wall-plug efficiency of 7.8% is measured at 17.3 mW in un-cooled condition. The laser wavelength tuning ranges are 8 nm for the single ring reflector cavity and 35 nm for the vernier ring reflector cavity, respectively. The Si hybrid laser is a promising light source for energy-efficient Si CMOS photonic links.

A single adiabatic microring-based laser in 220 nm silicon-on-insulator

We demonstrate a laser for the silicon photonics platform by hybrid integration with a III/V reflective semiconductor optical amplifier coupled to a 220 nm silicon-on-insulator half-cavity. We utilize a novel ultra-thin silicon edge coupler. A single adiabatic microring based inline reflector is used to select a lasing mode, as compared to the multiple rings and Bragg gratings used in many previous results. Despite the simplified design, the laser was measured to have on-chip 9.8 mW power, less than 220 KHz linewidth, over 45 dB side mode suppression ratio, less than -135 dB/Hz relative intensity noise, and 2.7% wall plug efficiency.

Vertical-coupled high-efficiency tunable III-V- CMOS SOI hybrid external-cavity laser

We demonstrate a hybrid III-V/SOI laser by vertically coupling a III-V RSOA chip with a SOI-CMOS chip containing a tunable wavelength selective reflector. We report a waveguide-coupled wall-plug-efficiency of 5.5% and output power of 10 mW. A silicon resistor-based microheater was integrated to thermally tune a ring resonator for precise lasing wavelength control. A high tuning efficiency of 2.2 nm/mW over a range of 18 nm was achieved by locally removing the SOI handler substrate. C-band single mode lasing was confirmed with a side mode suppression ratio of 35 dB. This grating coupler based vertical integration approach can be scaled up in two dimensions for efficient multi-wavelength sources in silicon photonics.

The metal grating design of plasmonic hybrid III-V/Si evanescent lasers

A hybrid III-V/silicon laser design with a metal grating layer inserted in between is proposed and numerically studied. The metal grating layer is buried in a silicon ridge waveguide surrounded by silicon dioxide, and its structural parameters such as periodicity, width and depth can be varied for optimization purpose. The plasmonic effect originated from the grating layer can manage optical fields between III-V and silicon layers in hopes of dimension reduction. The substrate is planarized to minimize the bonding failure. A numerical algorithm with various combinations of metal grating and waveguide structural parameters was created and the optimal design with 730 nm grating period and 600 nm of buried waveguide ridge height was obtained by minimizing the corresponding laser threshold. With top AlInGaAs quantum wells and optimized design of hybrid metal/silicon waveguide, a 0.6 μm(-1) threshold gain can be achieved.