Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform

Tuning of silicon nitride micro-cavities by controlled nanolayer deposition

Integration of single-photon emitters (SPEs) with resonant photonic structures is a promising approach for realizing compact and efficient single-photon sources for quantum communications, computing, and sensing. Efficient interaction between the SPE and the photonic cavity requires that the cavity's resonance matches the SPE's emission line. Here we demonstrate a new method for tuning silicon nitride (Si₃N₄) microring cavities via controlled deposition of the cladding layers. Guided by numerical simulations, we deposit silicon dioxide (SiO₂) nanolayers onto Si₃N₄ ridge structures in steps of 50 nm. We show tuning of the cavity resonance exceeding a free spectral range (FSR) of 3.5 nm without degradation of the quality-factor (Q-factor) of the cavity. We then complement this method with localized laser heating for fine-tuning of the cavity. Finally, we verify that the cladding deposition does not alter the position and spectral properties of nanoparticles placed on the cavity, which suggests that our method can be useful for integrating SPEs with photonic structures.

Towards integrated photonic interposers for processing octave-spanning microresonator frequency combs

Microcombs-optical frequency combs generated in microresonators-have advanced tremendously in the past decade, and are advantageous for applications in frequency metrology, navigation, spectroscopy, telecommunications, and microwave photonics. Crucially, microcombs promise fully integrated miniaturized optical systems with unprecedented reductions in cost, size, weight, and power. However, the use of bulk free-space and fiber-optic components to process microcombs has restricted form factors to the table-top. Taking microcomb-based optical frequency synthesis around 1550 nm as our target application, here, we address this challenge by proposing an integrated photonics interposer architecture to replace discrete components by collecting, routing, and interfacing octave-wide microcomb-based optical signals between photonic chiplets and heterogeneously integrated devices. Experimentally, we confirm the requisite performance of the individual passive elements of the proposed interposer-octave-wide dichroics, multimode interferometers, and tunable ring filters, and implement the octave-spanning spectral filtering of a microcomb, central to the interposer, using silicon nitride photonics. Moreover, we show that the thick silicon nitride needed for bright dissipative Kerr soliton generation can be integrated with the comparatively thin silicon nitride interposer layer through octave-bandwidth adiabatic evanescent coupling, indicating a path towards future system-level consolidation. Finally, we numerically confirm the feasibility of operating the proposed interposer synthesizer as a fully assembled system. Our interposer architecture addresses the immediate need for on-chip microcomb processing to successfully miniaturize microcomb systems and can be readily adapted to other metrology-grade applications based on optical atomic clocks and high-precision navigation and spectroscopy.

High-quality-factor microring resonator for strong atom-light interactions using miniature atomic beams

An integrated photonic platform is proposed for strong interactions between atomic beams and annealing-free high-quality-factor (Q) microresonators. We fabricated a thin-film, air-clad SiN microresonator with a loaded Q of 1.55×10⁶ around the optical transition of ⁸⁷Rb at 780 nm. This Q is achieved without annealing the devices at high temperatures, enabling future fully integrated platforms containing optoelectronic circuitry. The estimated single-photon Rabi frequency (2g) is 2π×64MHz 100 nm above the resonator. Our simulation result indicates that miniature atomic beams with a longitudinal speed of 0.2 m/s to 30 m/s will interact strongly with our resonator, allowing for the detection of single-atom transits and realization of scalable single-atom photonic devices. Interactions between racetrack resonators and thermal atomic beams are also simulated.

Polarization Beam Splitter Based on Si3N4/SiO2 Horizontal Slot Waveguides for On-Chip High-Power Applications

In this paper, we propose an Si₃N₄/SiO₂ horizontal-slot-waveguide-based polarization beam splitter (PBS) with low nonlinearity for on-chip high-power systems. The coupling length ratio between the quasi-TE and quasi-TM modes (L_TE/L_TM) was optimized to 2 for an efficient polarization splitting. For the single-slot design, the coupling length of the PBS was 281.5 μm, while the extinction ratios (ER) of the quasi-TM and quasi-TE modes were 23.9 dB and 20.8 dB, respectively. Compared to PBS based on the Si₃N₄ strip waveguide, the coupling length became 22.6% shorter. The proposed PBSs also had a relatively good fabrication tolerance for an ER of >20 dB. For the multi-slot design, the coupling length of the PBS was 290.3 μm, while the corresponding ER of the two polarizations were 24.0 dB and 21.0 dB, respectively. Furthermore, we investigated the tradeoff between the ER and coupling length for the optimized PBSs with single slot or multiple slots.

Gain characteristics of the hybrid slot waveguide amplifiers integrated with NaYF4:Er3+ NPs-PMMA covalently linked nanocomposites

Waveguide amplifiers based on slot waveguide have enormous capacity due to their ability to confine light strongly to a narrow slot waveguide. NaYF4:Er3+ nanoparticles-polymeric methyl methacrylate covalently linked nanocomposites were synthesized and filled into the slot. The stability and the Er3+ concentration doped in this novel material were improved. The slot waveguide was designed accurately. The rigorous numerical method, full-vector finite difference method, was used to analyze the modal characteristics and optimize the slot combined with the maximum power confinement in the slot and the minimum effective mode area of the slot. A four-level spectroscopic model pumped at 1480 nm was presented. The rate equations and propagation equations were solved and the gain characteristics of the slot waveguide amplifier were numerically simulated. The primary parameters were optimized. A net gain of 5.78 dB was achieved when the signal power was 0.001 mW at 1530 nm, pump power was 20 mW, Er3+ concentration was 1.3 × 1027 m-3, and the waveguide length was 1.5 cm.

Low loss CMOS-compatible silicon nitride photonics utilizing reactive sputtered thin films

Low temperature deposition of low loss silicon nitride (SiN) thin-films is very attractive as it opens opportunities for realization of multi-layer photonic chips and hybrid integration of optical waveguides with temperature sensitive platforms such as processed CMOS silicon electronics or lithium niobate on insulator. So far, the most common low-temperature deposition technique for SiN is plasma enhanced chemical vapor deposition (PECVD), however such SiN thin-films can suffer from significant losses at C-band wavelengths due to unwanted hydrogen bonds. In this contribution we present a back end of line (< 400°C), low loss SiN platform based on reactive sputtering for telecommunication applications. Waveguide losses of 0.8 dB/cm at 1550 nm and as low as 0.6 dB/cm at 1580 nm have been achieved for moderate confined waveguides which appear to be limited by patterning rather than material. These findings show that reactive sputtered SiN thin-films can have lower optical losses compared to PECVD SiN thin-films, and thus show promise for future hybrid integration platforms for applications such as high Q resonators, optical filters and delay lines for optical signal processing.

Extremely high dispersions in heterogeneously coupled waveguides

We present a heterogeneously coupled Si/SiO₂/SiN waveguide structure that can achieve extremely high dispersions (> | ± 10⁷| ps · nm^-1km^-1). A strong mode coupling between the Si and SiN waveguides introduces a normal dispersion to symmetric mode and an anomalous dispersion to anti-symmetric mode, and the large group velocity difference between the two waveguides results in such high dispersions. Geometric parameters of the structure control the peak dispersions and the central wavelength of the mode coupling, and these engineering capabilities are studied numerically. Analytical representations on the heterogeneously coupled waveguides are also introduced and these equations explain the effects of geometric parameters. This extremely dispersive waveguide scheme can be constructed with other material combinations as well and should be of interest in ultrafast signal processing and spectroscopic applications.

Vertically integrated waveguide self-coupled resonator based tunable optical filter

A vertically integrated waveguide self-coupled resonator based tunable optical filter was demonstrated. Unlike the conventional U-bend self-coupled waveguide structure, a top-layer S-bend waveguide was cross-coupled with the racetrack resonator on a bottom layer. The different waveguide coupling effect was compared with the same resonance structure, which can realize the same free spectral range as well as a high quality factor. Spectrum response can be designed separately by varying the coupling coefficient between waveguide and resonator. A heater attached on the top of the resonator can be utilized for the resonance wavelength tuning, while a heater on the top of cross-coupled waveguide has little influence on the device performance, which can help to improve the stability. The presented device can also be applied as a tunable modulator/switch.

On-chip dual-comb source for spectroscopy

Dual-comb spectroscopy is a powerful technique for real-time, broadband optical sampling of molecular spectra, which requires no moving components. Recent developments with microresonator-based platforms have enabled frequency combs at the chip scale. However, the need to precisely match the resonance wavelengths of distinct high quality-factor microcavities has hindered the development of on-chip dual combs. We report the simultaneous generation of two microresonator combs on the same chip from a single laser, drastically reducing experimental complexity. We demonstrate broadband optical spectra spanning 51 THz and low-noise operation of both combs by deterministically tuning into soliton mode-locked states using integrated microheaters, resulting in narrow (<10 kHz) microwave beat notes. We further use one comb as a reference to probe the formation dynamics of the other comb, thus introducing a technique to investigate comb evolution without auxiliary lasers or microwave oscillators. We demonstrate high signal-to-noise ratio absorption spectroscopy spanning 170 nm using the dual-comb source over a 20-μs acquisition time. Our device paves the way for compact and robust spectrometers at nanosecond time scales enabled by large beat-note spacings (>1 GHz).

Extending chip-based Kerr-comb to visible spectrum by dispersive wave engineering

Anomalous group velocity dispersion is a key parameter for generating bright solitons, and thus wideband Kerr frequency combs. Extension of the frequency combs spectrum to visible wavelengths has been a major challenge because of the strong normal dispersion of conventional photonic materials at these wavelengths. In this paper, we numerically demonstrate a wideband frequency comb extending from near-infrared to visible wavelengths (∼1200 nm to 650 nm). The proposed frequency comb micro-resonator takes advantage of a wideband blue-shifted anomalous dispersion, achieved in an optimized over-etched silicon nitride waveguide and strong power transfer to shorter wavelengths through radiative dispersive waves, achieved by modulating the dispersion in a coupled resonator architecture. We show the possibility of obtaining a close to visible dispersive Cherenkov radiation peak that is only 10 dB below the overall comb peak and can be tuned by adjusting the coupling structure in the coupled resonator architecture.

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer

A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiN_x) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiN_x is precisely measured in the temperature range 24-76 °C using the SiN_x rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiN_x ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si₃N₄, while the value for the PVD-SiN_x ring is slightly higher. Both SiN_x rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiN_x needs a high temperature annealing to reduce N-H bond absorption, it is concluded that PVD-SiN_x is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a 'silicone' polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiN_x rings is locked within 50 GHz at the same temperature range in the wavelength range 1460-1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al₂O₃, Ga₂O₃ Ta₂O₅, HfO₂ and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications such as medical and environmental sensing and in-vehicle data-communication.

Fabrication and characterization of on-chip silicon nitride microdisk integrated with colloidal quantum dots

We designed and fabricated free-standing, waveguide-coupled silicon nitride microdisks hybridly integrated with embedded colloidal quantum dots. An efficient coupling of quantum dot emission to resonant disk modes and eventually to the access waveguides is demonstrated. The amount of light coupled out to the access waveguide can be tuned by controlling its dimensions and offset with the disk edge. These devices open up new opportunities for both on-chip silicon nitride integrated photonics and novel optoelectronic devices with quantum dots.

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD

A correlation study of plasma parameters and film properties and the implication of dual frequency PECVD for industry are proposed.

High-quality silicon on silicon nitride integrated optical platform with an octave-spanning adiabatic interlayer coupler

Hybrid nanophotonic platforms based on three-dimensional integration of different photonic materials are emerging as promising ecosystems for the optoelectronic device fabrication. In order to benefit from key features of both silicon (Si) and silicon nitride (SiN) on a single chip, we have developed a wafer-scale hybrid photonic platform based on the integration of a thin crystalline Si layer on top of a thin SiN layer with an ultra-thin oxide buffer layer. A complete optical path in the hybrid platform is demonstrated by coupling light back and forth between nanophotonic devices in Si and SiN layers. Using an adiabatic tapered coupling method, a record-low interlayer coupling-loss of 0.02 dB is achieved at 1550 nm telecommunication wavelength window. We also demonstrate high-Q resonators on the hybrid material platform with intrinsic Q's as high as 3 × 10(6) for a 60 μm-radius microring resonator, which is (to the best of our knowledge) the highest Q observed for a micro-resonator on a hybrid Si/SiN platform.

Compact, 15 Gb/s electro-optic modulator through carrier accumulation in a hybrid Si/SiO(2)/Si microdisk

High-speed electro-optic modulators are among the key elements in any optical interconnect system. In this work we design and demonstrate an electro-optic modulator based on carrier accumulation on a multilayer integrated photonic platform comprising a stack of high quality Si, SiO(2), and Si layers. The device consists of a 3-μm radius microdisk with an embedded capacitor. Characterization results reveal an operation bandwidth of exceeding 10 GHz. The device is capable of transmitting 15 Gb/s with the on/off keying format in a single polarization. The proposed structure can be self-trimmed by up to 1 nm in wavelength by applying a dc bias voltage without any power consumption. This feature eliminates the need for power-hungry thermal-based compensation methods to address the resonance wavelength mismatch due to fabrication imperfections.

Low-loss silicon nitride waveguide hybridly integrated with colloidal quantum dots

Silicon nitride waveguides with a monolayer of colloidal quantum dots embedded inside were fabricated using a low-temperature deposition process and an optimized dry etching step for the composite layers. We experimentally demonstrated the luminescence of the embedded quantum dots is preserved and the loss of these hybrid waveguide wires is as low as 2.69dB/cm at 900nm wavelength. This hybrid integration of low loss silicon nitride photonics with active emitters offers opportunities for optical sources operating over a very broad wavelength range.

Ultrahigh-Q silicon resonators in a planarized local oxidation of silicon platform

We describe a platform for the fabrication of smooth waveguides and ultrahigh-quality-factor (Q factor) silicon resonators using a modified local oxidation of silicon (LOCOS) technique. Unlike the conventional LOCOS process, our approach allows the fabrication of nearly planarized structures, supporting a multilayer silicon photonics configuration. Using this approach we demonstrate the fabrication and the characterization of a microdisk resonator with an intrinsic Q factor that is one of the highest Q factors achieved with a compact silicon-on-insulator platform.

Recent advances in silicon-based passive and active optical interconnects

Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.

High-efficiency and wideband interlayer grating couplers in multilayer Si/SiO2/SiN platform for 3D integration of optical functionalities

We have designed interlayer grating couplers with single/double metallic reflectors for Si/SiO(2)/SiN multilayer material platform. Out-of-plane diffractive grating couplers separated by 1.6 μm thick buffer SiO(2) layer are vertically stacked against each other in Si and SiN layers. Geometrical optimization using genetic algorithm coupled with electromagnetic simulations using two-dimensional (2D) finite element method (FEM) results in coupler designs with high peak coupling efficiency of up to 89% for double- mirror and 64% for single-mirror structures at telecom wavelength. Also, 3-dB bandwidths of 40 nm and 50 nm are theoretically predicted for the two designs, respectively. We have fabricated the grating coupler structure with single mirror. Measured values for insertion loss and 3-dB bandwidth in the fabricated single-mirror coupler confirms the theoretical results. This opens up the possibility of low-loss 3D dense integration of optical functionalities in hybrid material platforms.

Polarization rotator-splitters and controllers in a Si3N4-on-SOI integrated photonics platform

We demonstrate novel polarization management devices in a custom-designed silicon nitride (Si(3)N(4)) on silicon-on-insulator (SOI) integrated photonics platform. In the platform, Si(3)N(4) waveguides are defined atop silicon waveguides. A broadband polarization rotator-splitter using a TM0-TE1 mode converter in a composite Si(3)N(4)-silicon waveguide is demonstrated. The polarization crosstalk, insertion loss, and polarization dependent loss are less than -19 dB, 1.5 dB, and 1.0 dB, respectively, over a bandwidth of 80 nm. A polarization controller composed of polarization rotator-splitters, multimode interference couplers, and thin film heaters is also demonstrated.