Subwavelength micropillar array terahertz lasers

Photonic polymeric structures and electrodynamics simulation method based on a coupled oscillator finite-difference time-domain (O-FDTD) approach

We use femtosecond laser-based two-photon polymerization (TPP) to fabricate a 2.5D micropillar array. Using an angular detection setup, we characterize the structure's scattering properties and compare the results against simulation results obtained from a novel electrodynamics simulation method. The algorithm employs a modified formulation of the Lorentz Oscillator Model and a leapfrog time differentiation to define a 2D coupled Oscillator Finite-Difference Time-Domain (O-FDTD). We validate the model by presenting several simulation examples that cover a wide range of photonic components, such as multi-mode interference splitters, photonic crystals, ring resonators, and Mach-Zehnder interferometers.

Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micro-pillars

We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were etched into nano- and micro-pillar arrays in an inductively coupled plasma. We investigate the influence of this process on the structure and strain-state, on the interband emission and on the intersubband absorption. Notably, for pillar spacings significantly smaller (≤1/3) than the intersubband wavelength, the magnitude of the intersubband absorption is not reduced even when 90% of the material is etched away and a similar linewidth is obtained. The same holds for the interband emission. In contrast, for pillar spacings on the order of the intersubband absorption wavelength, the intersubband absorption is masked by refraction effects and photonic crystal modes. The presented results are a first step towards micro- and nano-structured group-III nitride devices relying on intersubband transitions.

Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths

In this paper, we study intersubband characteristics of GaN/AlN and GaN/Al_0.4Ga_0.6N heterostructures in GaN nanowires structurally designed to absorb in the mid-infrared wavelength region. Increasing the GaN well width from 1.5 to 5.7 nm leads to a red shift of the intersubband absorption from 1.4 to 3.4 μm. The red shift in larger quantum wells is amplified by the fact that one of the GaN/AlN heterointerfaces (corresponding to the growth of GaN on AlN) is not sharp but rather a graded alloy extending around 1.5-2 nm. Using AlGaN instead of AlN for the same barrier dimensions, we observe the effects of reduced polarization, which blue shifts the band-to-band transitions and red shifts the intersubband transitions. In heavily doped GaN/AlGaN nanowires, a broad absorption band is observed in the 4.5-6.4 μm spectral region.

Design strategy for terahertz quantum dot cascade lasers

The development of quantum dot cascade lasers has been proposed as a path to obtain terahertz semiconductor lasers that operate at room temperature. The expected benefit is due to the suppression of nonradiative electron-phonon scattering and reduced dephasing that accompanies discretization of the electronic energy spectrum. We present numerical modeling which predicts that simple scaling of conventional quantum well based designs to the quantum dot regime will likely fail due to electrical instability associated with high-field domain formation. A design strategy adapted for terahertz quantum dot cascade lasers is presented which avoids these problems. Counterintuitively, this involves the resonant depopulation of the laser's upper state with the LO-phonon energy. The strategy is tested theoretically using a density matrix model of transport and gain, which predicts sufficient gain for lasing at stable operating points. Finally, the effect of quantum dot size inhomogeneity on the optical lineshape is explored, suggesting that the design concept is robust to a moderate amount of statistical variation.

Quantum cascade lasers: 20 years of challenges

We review the most recent technological and application advances of quantum cascade lasers, underlining the present milestones and future directions from the Mid-infrared to the Terahertz spectral range. Challenges and developments, which are the subject of the contributions to this focus issue, are also introduced.

Broadband terahertz amplification in a heterogeneous quantum cascade laser

We demonstrate a broadband terahertz amplifier based on ultrafast gain switching in a quantum cascade laser. A heterogeneous active region is processed into a coupled cavity metal-metal waveguide device and provides broadband terahertz gain that allows achieving an amplification bandwidth of more than 500 GHz. The temporal and spectral evolution of a terahertz seed pulse, which is generated in an integrated emitter section, is presented and an amplification factor of 21 dB is reached. Furthermore, the quantum cascade amplifier emission spectrum of the emerging sub-nanosecond terahertz pulse train is measured by time-domain spectroscopy and reveals discrete modes between 2.14 and 2.68 THz.