Completely CMOS compatible SiN-waveguide-based fiber coupling structure for Si wire waveguides

Silicon-Nanowire-Type Polarization-Diversified CWDM Demultiplexer for Low Polarization Crosstalk

Coarse wavelength division multiplexing (CWDM)-targeted novel silicon (Si)-nanowire-type polarization-diversified optical demultiplexers were numerically analyzed and experimentally verified. The optical demultiplexer comprised a hybrid mode conversion-type polarization splitter rotator (PSR) and a delayed Mach-Zehnder interferometric demultiplexer. Si-nanowire-based devices were fabricated using a commercially available Si photonics foundry process, exhibiting nearly identical spectral responses regardless of the polarization states of the input signals under the PSR. The experiment demonstrated a low insertion loss of 1.0 dB and a polarization-dependent loss of 1.0 dB, effectively suppressing spectral crosstalk from other channels by less than -15 dB. Furthermore, a TM-mode rejection-filter-integrated optical demultiplexer was designed and experimentally validated to mitigate unwanted TM-mode-related polarization crosstalk that arose from the PSR. It exhibited an improved polarization crosstalk rejection efficiency of -25 dB to -50 dB within the whole CWDM spectral range.

Silicon nitride assisted tri-layer edge coupler on lithium niobate-on-insulator platform

Lithium niobate-on-insulator (LNOI) is a promising integration platform for various applications, such as optical communication, microwave photonics, and nonlinear optics. To make Lithium niobate (LN) photonic integrated circuits (PICs) more practical, low-loss fiber-chip coupling is essential. In this Letter, we propose and experimentally demonstrate a silicon nitride (SiN) assisted tri-layer edge coupler on LNOI platform. The edge coupler consists of a bilayer LN taper and an interlayer coupling structure composed of an 80 nm-thick SiN waveguide and an LN strip waveguide. The measured fiber-chip coupling loss for the TE mode is 0.75 dB/facet at 1550 nm. Transition loss between the SiN waveguide and LN strip waveguide is ∼0.15 dB. In addition, the fabrication tolerance of the SiN waveguide in the tri-layer edge coupler is high.

All-optic control using a photo-thermal heater in Si photonics

We propose and demonstrate a simple all-optic control for Si photonics using a photo-thermal heater. The control light is absorbed in a heavily doped control waveguide and the signal light phase is tuned through thermal diffusion in a signal waveguide adjacent to but not optically coupled with the control waveguide. We designed and fabricated Mach-Zehnder- and microring-type devices requiring 17 (π-phase shift) and 4 (switching between resonance and non-resonance with 6 dB extinction) mW of control power, respectively. We confirmed that the heating efficiency of all-optic control exceeded that of an electrical heater placed above the signal waveguide.

Review of Metasurfaces and Metadevices: Advantages of Different Materials and Fabrications

Flat optics, metasurfaces, metalenses, and related materials promise novel on-demand light modulation within ultrathin layers at wavelength scale, enabling a plethora of next-generation optical devices, also known as metadevices. Metadevices designed with different materials have been proposed and demonstrated for different applications, and the mass production of metadevices is necessary for metadevices to enter the consumer electronics market. However, metadevice manufacturing processes are mainly based on electron beam lithography, which exhibits low productivity and high costs for mass production. Therefore, processes compatible with standard complementary metal–oxide–semiconductor manufacturing techniques that feature high productivity, such as i-line stepper and nanoimprint lithography, have received considerable attention. This paper provides a review of current metasurfaces and metadevices with a focus on materials and manufacturing processes. We also provide an analysis of the relationship between the aspect ratio and efficiency of different materials.

Simple and fully CMOS-compatible low-loss fiber coupling structure for a silicon photonics platform

A simple low-loss fiber coupling structure consisting of a Si inverted-taper waveguide and a 435 nm wide and 290 nm thick SiN waveguide was fabricated with fully complementary metal-oxide semiconductor (CMOS)-compatible processes. The small SiN waveguide can expand to the optical field corresponding to a fiber with a mode-field diameter of 4.1 µm. The fiber-to-chip coupling losses were 0.25 and 0.51 dB/facet for quasi-TE and quasi-TM modes, respectively, at a 1550 nm wavelength. Polarization-dependent losses of the conversion in the Si-to-SiN waveguide transition and the fiber-to-chip coupling were less than 0.3 and 0.5 dB, respectively, in the wavelength range of 1520-1580 nm.

Edge Couplers in Silicon Photonic Integrated Circuits: A Review

Silicon photonics has drawn increasing attention in the past few decades and is a promising key technology for future daily applications due to its various merits including ultra-low cost, high integration density owing to the high refractive index of silicon, and compatibility with current semiconductor fabrication process. Optical interconnects is an important issue in silicon photonic integrated circuits for transmitting light, and fiber-to-chip optical interconnects is vital in application scenarios such as data centers and optical transmission systems. There are mainly two categories of fiber-to-chip optical coupling: off-plane coupling and in-plane coupling. Grating couplers work under the former category, while edge couplers function as in-plane coupling. In this paper, we mainly focus on edge couplers in silicon photonic integrated circuits. We deliver an introduction to the research background, operation mechanisms, and design principles of silicon photonic edge couplers. The state-of-the-art of edge couplers is reviewed according to the different structural configurations of the device, while identifying the performance, fabrication feasibility, and applications. In addition, a brief comparison between edge couplers and grating couplers is conducted. Packaging issues are also discussed, and several prospective techniques for further improvements of edge couplers are proposed.

Broad-band surface optical coupler based on a SiO2-capped vertically curved silicon waveguide

A chip-surface optical coupler based on a vertically curved Si waveguide was demonstrated for coupling with high-numerical-aperture single-mode optical fibers with a mode-field diameter of 5 µm. This device features a dome-like SiO₂ coupler cap, which acts as collimation lens. We succeeded in fabricating this structure using an isotropic SiO₂ deposition technique employing plasma-enhanced chemical vapor deposition and obtained a light output that approximates that of a 5-µm-waist Gaussian beam. The fabricated coupler showed a coupling loss of less than 4.2 dB and a 0.5-dB-loss bandwidth above 150 nm for TE-polarized light.