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Pang C, Deng YH, Kheradmand E, Poonkottil N, Petit R, Elsinger L, Detavernier C, Geiregat P, Hens Z, Van Thourhout D. Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides. ACS PHOTONICS 2023; 10:4215-4224. [PMID: 38145169 PMCID: PMC10741659 DOI: 10.1021/acsphotonics.3c00945] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2023] [Indexed: 12/26/2023]
Abstract
Colloidal quantum dots (QDs) have become a versatile optoelectronic material for emitting and detecting light that can overcome the limitations of a range of electronic and photonic technology platforms. Photonic integrated circuits (PICs), for example, face the persistent challenge of combining active materials with passive circuitry ideally suited for guiding light. Here, we demonstrate the integration of photodiodes (PDs) based on PbS QDs on silicon nitride waveguides (WG). Analyzing planar QDPDs first, we argue that the main limitation WG-coupled QDPDs face is detector saturation induced by the high optical power density of the guided light. Using the cladding thickness and waveguide width as design parameters, we mitigate this issue, and we demonstrate WG-QDPDs with an external quantum efficiency of 67.5% at 1275 nm that exhibit a linear photoresponse for input powers up to 400 nW. In the next step, we demonstrate a compact infrared spectrometer by integrating these WG-QDPDs on the output channels of an arrayed waveguide grating demultiplexer. This work provides a path toward a low-cost PD solution for PICs, which are attractive for large-scale production.
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Affiliation(s)
- Chao Pang
- Photonics
Research Group, Ghent University - imec, 9052 Ghent, Belgium
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
| | - Yu-Hao Deng
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Physics
and Chemistry of Nanostructures Group, Ghent
University, 9000 Ghent, Belgium
| | - Ezat Kheradmand
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Physics
and Chemistry of Nanostructures Group, Ghent
University, 9000 Ghent, Belgium
| | - Nithin Poonkottil
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Conformal
Coating of Nanomaterials Group, Ghent University, 9000 Ghent, Belgium
| | - Robin Petit
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Conformal
Coating of Nanomaterials Group, Ghent University, 9000 Ghent, Belgium
| | - Lukas Elsinger
- Photonics
Research Group, Ghent University - imec, 9052 Ghent, Belgium
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
| | - Christophe Detavernier
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Conformal
Coating of Nanomaterials Group, Ghent University, 9000 Ghent, Belgium
| | - Pieter Geiregat
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Physics
and Chemistry of Nanostructures Group, Ghent
University, 9000 Ghent, Belgium
| | - Zeger Hens
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
- Physics
and Chemistry of Nanostructures Group, Ghent
University, 9000 Ghent, Belgium
| | - Dries Van Thourhout
- Photonics
Research Group, Ghent University - imec, 9052 Ghent, Belgium
- NB
Photonics, Ghent University, 9052 Ghent, Belgium
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2
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Chatzitheocharis D, Lampadariou E, Chatzianagnostou E, Lidorikis E, Vyrsokinos K. Si 3N 4-plasmonic ferroelectric MZIR modulator for 112-Gbaud PAM-4 transmission in the O-band. OPTICS EXPRESS 2023; 31:30847-30862. [PMID: 37710618 DOI: 10.1364/oe.489243] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Accepted: 08/11/2023] [Indexed: 09/16/2023]
Abstract
This paper presents a simulation-based analysis on the performance of plasmonic ferroelectric Mach-Zehnder in a ring (MZIR) versus symmetric Mach-Zehnder modulators (MZMs) on Si3N4 targeting O-band operation. The detailed investigation reveals the tradeoff between Au and Ag legacy noble metals providing lower modulator losses and CMOS compatible Cu featuring low cost. The numerical models also show that by opting for the MZIR layout there is a reduction in the Vπ x L product of 46% for Ag, 39% for Au and 30% for Cu versus MZMs. Time-domain simulations verify the successful generation of 112 Gbaud PAM-4 Signals from both MZIRs and MZMs for as low as 2 × 1.3 Vpp and 5µm long plasmonic phase shifters (PSs) with MZIRs providing a ΔQ signal improvement over MZMs of 2.9, 2.4, and 1.3 for Ag, Au, and Cu metals respectively. To the best of our knowledge, this is the first theoretical demonstration of such a low-loss, low-voltage, high-speed, and CMOS compatible plasmonic modulator on Si3N4, in the O-band.
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Zhou Z, Ou X, Fang Y, Alkhazraji E, Xu R, Wan Y, Bowers JE. Prospects and applications of on-chip lasers. ELIGHT 2023; 3:1. [PMID: 36618904 PMCID: PMC9810524 DOI: 10.1186/s43593-022-00027-x] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 09/03/2022] [Accepted: 09/05/2022] [Indexed: 01/05/2023]
Abstract
Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production.
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Affiliation(s)
- Zhican Zhou
- Integrated Photonics Lab, King Abdullah University of Science and Technology, Thuwal, Makkah Province Saudi Arabia
| | - Xiangpeng Ou
- Integrated Photonics Lab, King Abdullah University of Science and Technology, Thuwal, Makkah Province Saudi Arabia
| | - Yuetong Fang
- Function Hub, The Hong Kong University of Science and Technology (Guangzhou), Guangdong, China
| | - Emad Alkhazraji
- Integrated Photonics Lab, King Abdullah University of Science and Technology, Thuwal, Makkah Province Saudi Arabia
| | - Renjing Xu
- Function Hub, The Hong Kong University of Science and Technology (Guangzhou), Guangdong, China
| | - Yating Wan
- Integrated Photonics Lab, King Abdullah University of Science and Technology, Thuwal, Makkah Province Saudi Arabia
- Institute for Energy Efficiency, University of California, Santa Barbara, Santa Barbara, CA 93106 USA
| | - John E Bowers
- Institute for Energy Efficiency, University of California, Santa Barbara, Santa Barbara, CA 93106 USA
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Chatzitheocharis D, Ketzaki D, Patsamanis G, Chatzianagnostou E, Vyrsokinos K. Efficient multi-step coupling between Si 3N 4 waveguides and CMOS plasmonic ferroelectric phase shifters in the O-band. OPTICS EXPRESS 2022; 30:26988-27003. [PMID: 36236880 DOI: 10.1364/oe.457484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2022] [Accepted: 05/31/2022] [Indexed: 06/16/2023]
Abstract
In this paper we present a thorough simulation-based analysis for the design of multi-step couplers bridging seamlessly plasmonic barium titanate oxide (BTO) ferroelectric phase shifters and thick silicon nitride (Si3N4) waveguides for the O-band. The targeted plasmonic waveguides are a hybrid plasmonic waveguide (HPW) providing low propagation losses and a plasmonic metal-insulator-metal (MIM) slot waveguide offering a high confinement factor for high modulation efficiency. The proposed plasmonic platforms are formed by Copper (Cu) providing CMOS compatibility. The analysis is based on 2D-FD eigenvalue and 3D-FDTD numerical simulations targeting to identify the optimum geometries ensuring the lowest coupling losses, calculated as 1.75dB for the HPW geometry and 1.29dB for the MIM configuration. The corresponding confinement factors are 31.39% and 56.2% for the HPW and MIM waveguides, respectively.
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Chen D, Sun K, Shen Y, Jones AH, Dadey AA, Guo B, McArthur JA, Bank SR, Campbell JC. Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model. OPTICS EXPRESS 2022; 30:25262-25276. [PMID: 36237060 DOI: 10.1364/oe.457057] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2022] [Accepted: 06/15/2022] [Indexed: 06/16/2023]
Abstract
We report the frequency response of Al0.3InAsSb/Al0.7InAsSb nBn photodetectors. The 3-dB bandwidth of the devices varies from ∼ 150 MHz to ∼ 700 MHz with different device diameters and saturates with bias voltage immediately after the device turn on. A new equivalent circuit model is developed to explain the frequency behavior of nBn photodetectors. The simulated bandwidth based on the new equivalent circuit model agrees well with the bandwidth and the microwave scattering parameter measurements. The analysis reveals that the limiting factor of the bandwidth of the nBn photodetector is the large diffusion capacitance caused by the minority carrier lifetime and the device area. Additionally, the bandwidth of the nBn photodetector is barely affected by the photocurrent, which is found to be caused by the barrier structure in the nBn photodetector.
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Li Y, Dieussaert E, Baets R. Miniaturization of Laser Doppler Vibrometers-A Review. SENSORS (BASEL, SWITZERLAND) 2022; 22:4735. [PMID: 35808231 PMCID: PMC9269545 DOI: 10.3390/s22134735] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 06/13/2022] [Accepted: 06/20/2022] [Indexed: 02/01/2023]
Abstract
Laser Doppler vibrometry (LDV) is a non-contact vibration measurement technique based on the Doppler effect of the reflected laser beam. Thanks to its feature of high resolution and flexibility, LDV has been used in many different fields today. The miniaturization of the LDV systems is one important development direction for the current LDV systems that can enable many new applications. In this paper, we will review the state-of-the-art method on LDV miniaturization. Systems based on three miniaturization techniques will be discussed: photonic integrated circuit (PIC), self-mixing, and micro-electrochemical systems (MEMS). We will explain the basics of these techniques and summarize the reported miniaturized LDV systems. The advantages and disadvantages of these techniques will also be compared and discussed.
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Affiliation(s)
- Yanlu Li
- Photonics Research Group, Ghent University-Imec, Technologiepark-Zwijnaarde 126, 9052 Ghent, Belgium; (E.D.); (R.B.)
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, 9052 Ghent, Belgium
| | - Emiel Dieussaert
- Photonics Research Group, Ghent University-Imec, Technologiepark-Zwijnaarde 126, 9052 Ghent, Belgium; (E.D.); (R.B.)
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, 9052 Ghent, Belgium
| | - Roel Baets
- Photonics Research Group, Ghent University-Imec, Technologiepark-Zwijnaarde 126, 9052 Ghent, Belgium; (E.D.); (R.B.)
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, 9052 Ghent, Belgium
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7
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Tian R, Gan X, Li C, Chen X, Hu S, Gu L, Van Thourhout D, Castellanos-Gomez A, Sun Z, Zhao J. Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity. LIGHT, SCIENCE & APPLICATIONS 2022; 11:101. [PMID: 35443711 PMCID: PMC9021258 DOI: 10.1038/s41377-022-00784-x] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Revised: 03/18/2022] [Accepted: 03/31/2022] [Indexed: 05/27/2023]
Abstract
Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous, the dark current is lower than 7 nA, which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA W-1 is obtained. Remarkably, the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection, enabling an increased responsivity of 709 mA W-1. Besides, the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a wide spectral range, as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current, high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon, lithium niobate, polymer, etc.
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Affiliation(s)
- Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
| | - Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Siqi Hu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Linpeng Gu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Dries Van Thourhout
- Photonics Research Group and Center for Nano and Biophotonics, Ghent University, B-9000, Gent, Belgium
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), E-28049, Madrid, Spain
| | - Zhipei Sun
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, FI-02150, Espoo, Finland
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
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8
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Cuyvers S, Hermans A, Kiewiet M, Goyvaerts J, Roelkens G, Van Gasse K, Van Thourhout D, Kuyken B. Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection. OPTICS LETTERS 2022; 47:937-940. [PMID: 35167563 DOI: 10.1364/ol.447636] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2021] [Accepted: 01/11/2022] [Indexed: 06/14/2023]
Abstract
Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused on telecommunication wavelengths. Yet, to unlock the full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential to serve applications such as biosensing, imaging, and quantum photonics. Here, we report the first, to the best of our knowledge, microtransfer printed Si p-i-n photodiodes on a commercially available SiN platform to target wavelengths <850 nm. A novel heterogeneous integration process flow was developed to offer a high microtransfer printing yield. Moreover, these devices are fabricated with CMOS compatible and wafer-scale technology.
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9
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Rao A, Moille G, Lu X, Westly DA, Sacchetto D, Geiselmann M, Zervas M, Papp SB, Bowers J, Srinivasan K. Towards integrated photonic interposers for processing octave-spanning microresonator frequency combs. LIGHT, SCIENCE & APPLICATIONS 2021; 10:109. [PMID: 34039954 PMCID: PMC8155053 DOI: 10.1038/s41377-021-00549-y] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2020] [Revised: 04/21/2021] [Accepted: 05/03/2021] [Indexed: 06/12/2023]
Abstract
Microcombs-optical frequency combs generated in microresonators-have advanced tremendously in the past decade, and are advantageous for applications in frequency metrology, navigation, spectroscopy, telecommunications, and microwave photonics. Crucially, microcombs promise fully integrated miniaturized optical systems with unprecedented reductions in cost, size, weight, and power. However, the use of bulk free-space and fiber-optic components to process microcombs has restricted form factors to the table-top. Taking microcomb-based optical frequency synthesis around 1550 nm as our target application, here, we address this challenge by proposing an integrated photonics interposer architecture to replace discrete components by collecting, routing, and interfacing octave-wide microcomb-based optical signals between photonic chiplets and heterogeneously integrated devices. Experimentally, we confirm the requisite performance of the individual passive elements of the proposed interposer-octave-wide dichroics, multimode interferometers, and tunable ring filters, and implement the octave-spanning spectral filtering of a microcomb, central to the interposer, using silicon nitride photonics. Moreover, we show that the thick silicon nitride needed for bright dissipative Kerr soliton generation can be integrated with the comparatively thin silicon nitride interposer layer through octave-bandwidth adiabatic evanescent coupling, indicating a path towards future system-level consolidation. Finally, we numerically confirm the feasibility of operating the proposed interposer synthesizer as a fully assembled system. Our interposer architecture addresses the immediate need for on-chip microcomb processing to successfully miniaturize microcomb systems and can be readily adapted to other metrology-grade applications based on optical atomic clocks and high-precision navigation and spectroscopy.
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Affiliation(s)
- Ashutosh Rao
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
- Maryland NanoCenter, University of Maryland, College Park, 20742, MD, USA.
| | - Gregory Moille
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD, 20742, USA
| | - Xiyuan Lu
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
- Maryland NanoCenter, University of Maryland, College Park, 20742, MD, USA
| | - Daron A Westly
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Davide Sacchetto
- Ligentec, EPFL Innovation Park, Batiment C, Lausanne, Switzerland
| | | | - Michael Zervas
- Ligentec, EPFL Innovation Park, Batiment C, Lausanne, Switzerland
| | - Scott B Papp
- Physical Measurement Laboratory, Time and Frequency Division, National Institute of Standards and Technology, Boulder, CO, 80305, USA
- Department of Physics, University of Colorado, Boulder, CO, 80309, USA
| | - John Bowers
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Kartik Srinivasan
- Physical Measurement Laboratory, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD, 20742, USA.
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10
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Liang D, E. Bowers J. Recent Progress in Heterogeneous III-V-on-Silicon Photonic Integration. ACTA ACUST UNITED AC 2021. [DOI: 10.37188/lam.2021.005] [Citation(s) in RCA: 41] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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11
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Wang B, Morgan JS, Sun K, Jahanbozorgi M, Yang Z, Woodson M, Estrella S, Beling A, Yi X. Towards high-power, high-coherence, integrated photonic mmWave platform with microcavity solitons. LIGHT, SCIENCE & APPLICATIONS 2021; 10:4. [PMID: 33386388 PMCID: PMC7775918 DOI: 10.1038/s41377-020-00445-x] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2020] [Revised: 11/24/2020] [Accepted: 11/26/2020] [Indexed: 05/29/2023]
Abstract
Millimetre-wave (mmWave) technology continues to draw great interest due to its broad applications in wireless communications, radar, and spectroscopy. Compared to pure electronic solutions, photonic-based mmWave generation provides wide bandwidth, low power dissipation, and remoting through low-loss fibres. However, at high frequencies, two major challenges exist for the photonic system: the power roll-off of the photodiode, and the large signal linewidth derived directly from the lasers. Here, we demonstrate a new photonic mmWave platform combining integrated microresonator solitons and high-speed photodiodes to address the challenges in both power and coherence. The solitons, being inherently mode-locked, are measured to provide 5.8 dB additional gain through constructive interference among mmWave beatnotes, and the absolute mmWave power approaches the theoretical limit of conventional heterodyne detection at 100 GHz. In our free-running system, the soliton is capable of reducing the mmWave linewidth by two orders of magnitude from that of the pump laser. Our work leverages microresonator solitons and high-speed modified uni-traveling carrier photodiodes to provide a viable path to chip-scale, high-power, low-noise, high-frequency sources for mmWave applications.
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Affiliation(s)
- Beichen Wang
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jesse S Morgan
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Keye Sun
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Mandana Jahanbozorgi
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Zijiao Yang
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA
- Department of Physics, University of Virginia, Charlottesville, VA, 22904, USA
| | | | | | - Andreas Beling
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
| | - Xu Yi
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
- Department of Physics, University of Virginia, Charlottesville, VA, 22904, USA.
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12
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Goyvaerts J, Kumari S, Uvin S, Zhang J, Baets R, Gocalinska A, Pelucchi E, Corbett B, Roelkens G. Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications. OPTICS EXPRESS 2020; 28:21275-21285. [PMID: 32680172 DOI: 10.1364/oe.395796] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2020] [Accepted: 06/23/2020] [Indexed: 06/11/2023]
Abstract
We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.
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