Greatly improved photoresponse in the MAPbBr3/Si heterojunction by introducing an ITO layer and optimizing MAPbBr3 layer thickness

Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors

Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr3) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr3/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe for the MAPbBr3 solution and spinning, will be disclosed and discussed. It will be shown that extending the soaking time and refining the precursor solution's stoichiometry may enhance surface coverage, adhesion to the GaAs, and film uniformity, as well as provide a new way to integrate MAPbBr3 on GaAs. Compared to the pristine MAPbBr3, the enhanced structural purity of the perovskite on GaAs was confirmed by X-ray Diffraction (XRD) upon optimization compared to the conventional glass substrate. Scanning Electron Microscopy (SEM) revealed the formation of microcube-like structures on the top of an otherwise continuous MAPbBr3 polycrystalline film, with increased grain size and reduced grain boundary effects pointed by Energy-Dispersive Spectroscopy (EDS) and cathodoluminescence (CL). Enhanced absorption was demonstrated in the visible range and broadened photoluminescence (PL) emission at room temperature, with traces of reduction in the orthorhombic tilting revealed by temperature-dependent PL. A reduced average carrier lifetime was reduced to 13.8 ns, revealed by time-resolved PL (TRPL). The dark current was typically around 8.8 × 10-8 A. Broad photoresponsivity between 540 and 875 nm reached a maximum of 3 mA/W and 16 mA/W, corresponding to a detectivity of 6 × 1010 and 1 × 1011 Jones at -1 V and 50 V, respectively. In case of on/off measurements, the rise and fall times were 0.40 s and 0.61 s or 0.62 s and 0.89 s for illumination, with 500 nm or 875 nm photons, respectively. A long-term stability test at room temperature in air confirmed the optical and structural stability of the proposed hybrid structure. This work provides insights into the physical mechanisms of new hybrid junctions for high-performance photodetectors.

A Universal Fabrication Strategy for High-Resolution Perovskite-Based Photodetector Arrays

Metal halide perovskite photodetector arrays have demonstrated great potential applications in the field of integrated systems, optical communications, and health monitoring. However, the fabrication of large-scale and high-resolution device is still challenging due to their incompatibility with the polar solvents. Here, a universal fabrication strategy that utilizes ultrathin encapsulation-assisted photolithography and etching to create high-resolution photodetectors array with vertical crossbar structure is reported. This approach yields a 48 × 48 photodetector array with a resolution of 317 ppi. The device shows good imaging capability with a high on/off ratio of 3.3 × 105 and long-term working stability over 12 h. Furthermore, this strategy can be applied to five different material systems, and is fully compatible with the existing photolithography and etching techniques, which are expected to have potential applications in the other high-density and solvent-sensitive devices array, including perovskite- or organic semiconductor-based memristor, light emitting diode displays, and transistors.

Quartz tuning fork-based high sensitive photodetector by co-coupling photoelectric and the thermoelastic effect of perovskite

This paper reports a new strategy for enhancing the photoresponse of a quartz tuning fork (QTF). A deposited light absorbing layer on the surface of QTF could improve the performance only to a certain extent. Herein, a novel strategy is proposed to construct a Schottky junction on the QTF. The Schottky junction presented here consists of a silver-perovskite, which has extremely high light absorption coefficient and dramatically high power conversion efficiency. The co-coupling of the perovskite's photoelectric effect and its related QTF thermoelastic effect leads to a dramatic improvement in the radiation detection performance. Experimental results indicate that the CH₃NH₃PbI₃-QTF obtains two orders of magnitude enhancement in sensitivity and SNR, and the 1σ detection limit was calculated to be 1.9 µW. It was the first time that the QTF resonance detection and perovskite Schottky junction was combined for optical detection. The presented design could be used in photoacoustic spectroscopy and thermoelastic spectroscopy for trace gas sensing.