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Lu H, Li Y, Yue Z, Mao D, Zhao J. Graphene-tuned EIT-like effect in photonic multilayers for actively controlled light absorption of topological insulators. OPTICS EXPRESS 2020; 28:31893-31903. [PMID: 33115153 DOI: 10.1364/oe.397753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2020] [Accepted: 09/01/2020] [Indexed: 06/11/2023]
Abstract
As newly emerging nanomaterials, topological insulators with unique conducting surface states that are protected by time-reversal symmetry present excellent prospects in electronics and photonics. The active control of light absorption in topological insulators are essential for the achievement of novel optoelectronic devices. Herein, we investigate the controllable light absorption of topological insulators in Tamm plasmon multilayer systems composed of a Bi1.5Sb0.5Te1.8Se1.2 (BSTS) film and a dielectric Bragg mirror with a graphene-involved defect layer. The results show that an ultranarrow electromagnetically induced transparency (EIT)-like window can be generated in the broad absorption spectrum. Based on the EIT-like effect, the Tamm plasmon enhanced light absorption of topological insulators can be dynamically tuned by adjusting the gate voltage on graphene in the defect layer. These results will pave a new avenue for the realization of topological insulator-based active optoelectronic functionalities, for instance light modulation and switching.
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Xing C, Yin P, Peng Z, Zhang H. Engineering Mono-Chalcogen Nanomaterials for Omnipotent Anticancer Applications: Progress and Challenges. Adv Healthc Mater 2020; 9:e2000273. [PMID: 32537940 DOI: 10.1002/adhm.202000273] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2020] [Revised: 04/16/2020] [Indexed: 12/16/2022]
Abstract
Belonging to the chalcogen group, the elements selenium (Se) and tellurium (Te) are located in Group VI-A of the periodic table. Zero-valent nanodimensioned Se (nano-Se) and Te (nano-Te) have displayed important biomedical applications in recent years. The past two decades have witnessed an explosion in novel cancer treatment strategies using nano-Se and nano-Te as aggressive weapons against tumors. Indeed, they are both inorganic nanomedicines that suppress tumor cell proliferation, diffusion, and metastasis. Abundant synthesis strategies for rational and precise surface decoration of nano-Se and nano-Te make them significant players in resisting cancers by means of powerful multi-modal treatment methods. This review focuses on the design and engineering of nano-Se- and nano-Te-based nanodelivery systems and their precise uses in cancer treatment. The corresponding anticancer molecular mechanisms of nano-Se and nano-Te are discussed in detail. Given their different photo-induced behaviors, the presence or absence of near infrared illumination is used as a defining characteristic when describing the anticancer applications of nano-Se and nano-Te. Finally, the challenges and future prospects of nano-Se and nano-Te are summarized and highlighted.
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Affiliation(s)
- Chenyang Xing
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen University Shenzhen 518060 P. R. China
| | - Peng Yin
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen University Shenzhen 518060 P. R. China
| | - Zhengchun Peng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen University Shenzhen 518060 P. R. China
| | - Han Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen University Shenzhen 518060 P. R. China
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Fan Q, Wang L, Xu D, Duo Y, Gao J, Zhang L, Wang X, Chen X, Li J, Zhang H. Solution-gated transistors of two-dimensional materials for chemical and biological sensors: status and challenges. NANOSCALE 2020; 12:11364-11394. [PMID: 32428057 DOI: 10.1039/d0nr01125h] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) materials have been the focus of materials research for many years due to their unique fascinating properties and large specific surface area (SSA). They are very sensitive to the analytes (ions, glucose, DNA, protein, etc.), resulting in their wide-spread development in the field of sensing. New 2D materials, as the basis of applications, are constantly being fabricated and comprehensively studied. In a variety of sensing applications, the solution-gated transistor (SGT) is a promising biochemical sensing platform because it can work at low voltage in different electrolytes, which is ideal for monitoring body fluids in wearable electronics, e-skin, or implantable devices. However, there are still some key challenges, such as device stability and reproducibility, that must be faced in order to pave the way for the development of cost-effective, flexible, and transparent SGTs with 2D materials. In this review, the device preparation, device physics, and the latest application prospects of 2D materials-based SGTs are systematically presented. Besides, a bold perspective is also provided for the future development of these devices.
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Affiliation(s)
- Qin Fan
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lude Wang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China.
| | - Duo Xu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
| | - Yanhong Duo
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China.
| | - Jie Gao
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
| | - Lei Zhang
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Xianbao Wang
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Xiang Chen
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
| | - Jinhua Li
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China.
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Li Z, Zhang Y, Cheng C, Yu H, Chen F. 6.5 GHz Q-switched mode-locked waveguide lasers based on two-dimensional materials as saturable absorbers. OPTICS EXPRESS 2018; 26:11321-11330. [PMID: 29716055 DOI: 10.1364/oe.26.011321] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2018] [Accepted: 04/12/2018] [Indexed: 06/08/2023]
Abstract
Two-dimensional (2D) materials have generated great interest in the past few years opening up a new dimension in the development of optoelectronics and photonics. In this paper, we demonstrate 6.5 GHz fundamentally Q-switched mode-locked lasers with high performances in the femtosecond laser-written waveguide platform by applying graphene, MoS2 and Bi2Se3 as saturable absorbers (SAs). The minimum mode-locked pulse duration was measured to be as short as 26 ps in the case of Bi2Se3 SA. The maximum slope efficiency reached 53% in the case of MoS2 SA. This is the first demonstration of Q-switched mode-locked waveguide lasers based on MoS2 and Bi2Se3 in the waveguide platform. These high-performance Q-switched mode-locked waveguide lasers based on 2D materials pave the way for practical applications of compact ultrafast photonics.
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Ceramic planar waveguide laser of non-aqueous tape casting fabricated YAG/Yb:YAG/YAG. Sci Rep 2016; 6:31289. [PMID: 27535577 PMCID: PMC4989161 DOI: 10.1038/srep31289] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2016] [Accepted: 07/15/2016] [Indexed: 11/08/2022] Open
Abstract
Ceramic YAG/Yb:YAG/YAG planar waveguide lasers were realized on continuous-wave and mode-locked operations. The straight waveguide, fabricated by non-aqueous tape casting and solid state reactive sintering, enabled highly efficient diode-pumped waveguide continuous-wave laser with the slope efficiency of 66% and average output power of more than 3 W. The influence of the waveguide structure on the wavelength tunability was also experimentally investiccgated with a dispersive prism. Passively mode-locked operation of the ceramic waveguide laser was achieved by using a semiconductor saturable absorber mirror (SESAM), output 2.95 ps pulses with maximum power of 385 mW at the central wavelength of 1030 nm.
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Yan K, Lin J, Zhou Y, Gu C, Xu L, Wang A, Yao P, Zhan Q. Bi 2Te 3 based passively Q-switched fiber laser with cylindrical vector beam emission. APPLIED OPTICS 2016; 55:3026-3029. [PMID: 27139870 DOI: 10.1364/ao.55.003026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report a passively Q-switched fiber laser with cylindrical vector beam output modes using a few-mode fiber Bragg grating as a polarization-selective output coupler and Bi2Te3 as the saturable absorber. Both radially and azimuthally polarized beams can be readily generated, and the output polarization can be switchable by tuning the polarization controllers inside the laser cavity. The repetition rate of the Q-switched laser can be tuned from 31.54 to 49.40 kHz when the pump power increases from 103.5 to 139.5 mW. The fiber laser operates at a single wavelength of 1557.5 nm with a 3 dB linewidth of <0.04 nm.
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Tan Y, Guo Z, Shang Z, Liu F, Böttger R, Zhou S, Shao J, Yu X, Zhang H, Chen F. Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation. Sci Rep 2016; 6:21799. [PMID: 26888223 PMCID: PMC4757877 DOI: 10.1038/srep21799] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2015] [Accepted: 02/01/2016] [Indexed: 11/25/2022] Open
Abstract
The nonlinear optical property of topological insulator bismuth selenide (Bi2Se3) is found to be well-tailored through ion irradiation by intentionally introducing defects. The increase of the optical modulation depth sensitively depends on the careful selection of the irradiation condition. By implementing the ion irradiated Bi2Se3 film as an optical saturable absorber device for the Q-switched wave-guide laser, an enhanced laser performance has been obtained including narrower pulse duration and higher peak power. Our work provides a new approach of tailoring the nonlinear optical properties of materials through ion irradiation, a well-developed chip-technology, which could find wider applicability to other layered two-dimensional materials beyond topological insulators, such as graphene, MoS2, black phosphours etc.
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Affiliation(s)
- Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education) Shandong University Shandong, Jinan, 250100, China
| | - Zhinan Guo
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China.,Institute of Biomedicine and Biotechnology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Zhen Shang
- School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education) Shandong University Shandong, Jinan, 250100, China
| | - Fang Liu
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Roman Böttger
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Shengqiang Zhou
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Jundong Shao
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China.,Institute of Biomedicine and Biotechnology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Xuefeng Yu
- Institute of Biomedicine and Biotechnology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Han Zhang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education) Shandong University Shandong, Jinan, 250100, China
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Tan Y, Guo Z, Ma L, Zhang H, Akhmadaliev S, Zhou S, Chen F. Q-switched waveguide laser based on two-dimensional semiconducting materials: tungsten disulfide and black phosphorous. OPTICS EXPRESS 2016; 24:2858-2866. [PMID: 26906854 DOI: 10.1364/oe.24.002858] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Owing to their unique properties, graphene-like two dimensional semiconducting materials, including Tungsten Disulfide (WS2) and Black Phosphorous (BP), have attracted increasing interest from basic research to practical applications. Herein, we demonstrated the ultrafast nonlinear saturable absorption response of WS2 and BP films in the waveguide structure. Through fabricating WS2 and BP films by evaporating the solutions on glass wafers. Saturable absorber films were attached onto the end-facet of the waveguide, which therefore constitutes a resonant cavity for the waveguide laser. Under a pump laser at 810 nm, we could obtain a stable Q-switched operation in the waveguide structure. This work indicated the significant potential of WS2 and BP for the ultrafast waveguide laser.
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Yao W, Gao J, Zhang L, Li J, Tian Y, Ma Y, Wu X, Ma G, Yang J, Pan Y, Dai X. Continuous-wave yellow-green laser at 0.56 μm based on frequency doubling of a diode-end-pumped ceramic Nd:YAG laser. APPLIED OPTICS 2015; 54:5817-5821. [PMID: 26193034 DOI: 10.1364/ao.54.005817] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We present what is, to the best of our knowledge, the first report on yellow-green laser generation based on the frequency doubling of the 1.1 μm transitions in Nd:YAG ceramics. By employing an 885 nm diode laser as the end-pumping source and a lithium triborate crystal as the frequency doubler, the highest continuous wave output powers of 1.4, 0.5, and 1.1 W at 556, 558, and 561 nm are achieved, respectively. These result in optical-to-optical efficiencies of 6.9%, 2.5%, and 5.4% with respect to the absorbed pump power, respectively.
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