Integrated silicon nitride electro-optic modulators with atomic layer deposited overlays

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology, the large silicon wafer size, and promising Si optical properties. The monolithic integration by direct epitaxy of III-V lasers and Si photonic devices on the same Si substrate has been considered for decades as the main obstacle to the realization of dense photonics chips. Despite considerable progress in the last decade, only discrete III-V lasers grown on bare Si wafers have been reported, whatever the wavelength and laser technology. Here we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. A mid-IR GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by SiO2. Growth and device fabrication challenges, arising from the template architecture, were overcome to demonstrate more than 10 mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of the light was coupled into the SiN waveguides, in good agreement with theoretical calculations for this butt-coupling configuration. This work lift an important building block and it paves the way for future low-cost, large-scale, fully integrated photonic chips.

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz^2/3 and 73.8 dB·Hz^2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Superiorly low half-wave voltage electro-optic polymer modulator for visible photonics

Chip-scale optical devices operated at wavelengths shorter than communication wavelengths, such as LiDAR for autonomous driving, bio-sensing, and quantum computation, have been developed in the field of photonics. In data processing involving optical devices, modulators are indispensable for the conversion of electronic signals into optical signals. However, existing modulators have a high half-wave voltage-length product (VπL) which is not sufficient at wavelengths below 1000 nm. Herein, we developed a significantly efficient optical modulator which has low V_πL of 0.52 V·cm at λ = 640 nm using an electro-optic (EO) polymer, with a high glass transition temperature (Tg = 164 °C) and low optical absorption loss (2.6 dB/cm) at λ = 640 nm. This modulator is not only more efficient than any EO-polymer modulator reported thus far, but can also enable ultra-high-speed data communication and light manipulation for optical platforms operating in the ranges of visible and below 1000 nm infrared.

Ultra-broadband metamaterial absorber from ultraviolet to long-wave infrared based on CMOS-compatible materials

Broadband absorption of electromagnetic waves in different wavelength regions is desired for applications ranging from highly efficient solar cells, waste heat harvesting, multi-color infrared (IR) detection to sub-ambient radiative cooling. Taper-shaped structures made up of alternating metal/dielectric multilayers offer the broadest absorption bandwidth so far, but face a trade-off between optical performance and material choice, i.e., those with the broadest bandwidth utilize exclusively CMOS-incompatible materials, hampering their large-scale applications. In this work, through careful examination of the unique material property of aluminum (Al) and zinc sulfide (ZnS), a sawtooth-like and a pyramid-like multilayer absorber is proposed, whose working bandwidth (0.2-15 µm) covers from ultraviolet (UV) all the way to long-wave infrared (LWIR) range, being compatible with CMOS technology at the same time. The working principle of broadband absorption is elucidated with effective hyperbolic metamaterial model plus the excitation of multiple slow-light modes. Absorption performance such as polarization and incidence-angle dependence are also investigated. The proposed Al-ZnS multilayer absorbers with ultra-broadband near-perfect absorption may find potential applications in infrared imaging and spectroscopy, radiative cooling, solar energy conversion, etc.

Perfect secrecy cryptography via mixing of chaotic waves in irreversible time-varying silicon chips

Protecting confidential data is a major worldwide challenge. Classical cryptography is fast and scalable, but is broken by quantum algorithms. Quantum cryptography is unclonable, but requires quantum installations that are more expensive, slower, and less scalable than classical optical networks. Here we show a perfect secrecy cryptography in classical optical channels. The system exploits correlated chaotic wavepackets, which are mixed in inexpensive and CMOS compatible silicon chips. The chips can generate 0.1 Tbit of different keys for every mm of length of the input channel, and require the transmission of an amount of data that can be as small as 1/1000 of the message's length. We discuss the security of this protocol for an attacker with unlimited technological power, and who can access the system copying any of its part, including the chips. The second law of thermodynamics and the exponential sensitivity of chaos unconditionally protect this scheme against any possible attack.